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    • 5. 发明授权
    • Optical interference display panel and manufacturing method thereof
    • 光干涉显示面板及其制造方法
    • US07532385B2
    • 2009-05-12
    • US10807128
    • 2004-03-24
    • Wen-Jian LinBrian ArbuckleBrian GallyPhilip FloydLauren Palmateer
    • Wen-Jian LinBrian ArbuckleBrian GallyPhilip FloydLauren Palmateer
    • G02B26/00H01L21/00
    • G02B26/001B81B7/0012B81B2201/045
    • A first electrode and a sacrificial layer are sequentially formed on a substrate, and then first openings for forming supports inside are formed in the first electrode and the sacrificial layer. The supports are formed in the first openings, and then a second electrode is formed on the sacrificial layer and the supports, thus forming a micro electro mechanical system structure. Afterward, an adhesive is used to adhere and fix a protection structure to the substrate for forming a chamber to enclose the micro electro mechanical system structure, and at least one second opening is preserved on sidewalls of the chamber. A release etch process is subsequently employed to remove the sacrificial layer through the second opening in order to form cavities in an optical interference reflection structure. Finally, the second opening is closed to seal the optical interference reflection structure between the substrate and the protection structure.
    • 第一电极和牺牲层依次形成在基板上,然后在第一电极和牺牲层中形成用于形成支撑件的第一开口。 支撑件形成在第一开口中,然后在牺牲层和支撑件上形成第二电极,从而形成微机电系统结构。 之后,使用粘合剂将保护结构粘附并固定到基底上以形成腔室以包围微机电系统结构,并且至少一个第二开口保留在腔室的侧壁上。 随后采用释放蚀刻工艺以通过第二开口去除牺牲层,以便在光学干涉反射结构中形成空腔。 最后,关闭第二个开口以密封衬底和保护结构之间的光学干涉反射结构。
    • 7. 发明申请
    • SYSTEM AND METHOD OF TESTING HUMIDITY IN A SEALED MEMS DEVICE
    • 密封MEMS器件测试湿度的系统和方法
    • US20080115596A1
    • 2008-05-22
    • US12021218
    • 2008-01-28
    • Brian GallyLauren PalmateerManish KothariWilliams Cummings
    • Brian GallyLauren PalmateerManish KothariWilliams Cummings
    • G01G9/00
    • B81C99/0045G01M3/002G01M3/02G01M3/186G01M3/229G02B26/001Y10T29/49002
    • One embodiment provides a method of testing humidity. The method includes measuring i) a first weight of a first device which encloses a plurality of interferometric modulators and ii) a second weight of a second device which encloses a plurality of interferometric modulators, wherein the first and second devices contain a different amount of water vapor. The method further includes comparing the weights of the first and second devices and determining a relative humidity value or a degree of the relative humidity inside one of the two devices based at least in part upon the weight comparison. In one embodiment, the relative humidity value or degree is determined considering at least one of the following parameters: i) temperature-humidity combination inside at least one of the devices, ii) the thickness and width of a seal of the at least one device, iii) adhesive permeability of a component of the at least one device, iv) a desiccant capacity inside the at least one device and v) a device size.
    • 一个实施例提供了测试湿度的方法。 该方法包括测量i)包围多个干涉式调制器的第一装置的第一权重和ii)封闭多个干涉式调制器的第二装置的第二权重,其中第一和第二装置含有不同量的水 汽。 该方法还包括比较第一和第二装置的重量,并且至少部分地基于重量比较来确定两个装置之一内的相对湿度值或相对湿度的程度。 在一个实施例中,考虑以下参数中的至少一个来确定相对湿度值或度数:i)至少一个装置内的温度 - 湿度组合,ii)至少一个装置的密封件的厚度和宽度 ,iii)所述至少一个装置的部件的粘合剂渗透性,iv)所述至少一个装置内的干燥剂容量,以及v)装置尺寸。
    • 9. 发明申请
    • PROCESS FOR MODIFYING OFFSET VOLTAGE CHARACTERISTICS OF AN INTERFEROMETRIC MODULATOR
    • 用于修改干涉仪调制器偏移电压特性的方法
    • US20080093688A1
    • 2008-04-24
    • US11961744
    • 2007-12-20
    • William CummingsBrian Gally
    • William CummingsBrian Gally
    • H01L29/84H01L21/00
    • G09G3/3466G02B26/001G09G2320/0204
    • An interferometric modulator manufactured according to a particular set of processing parameters may have a non-zero offset voltage. A process has been developed for modifying the processing parameters to shift the non-zero offset voltage closer to zero. For example, the process may involve identifying a set of processing parameters for manufacturing an interferometric modulator that results in a non-zero offset voltage for the interferometric modulator. The set of processing parameters may then be modified to shift the non-zero offset voltage closer to zero. For example, modifying the set of processing parameters may involve modifying one or more deposition parameters used to make the interferometric modulator, applying a current (e.g., a counteracting current) to the interferometric modulator, and/or annealing the interferometric modulator. Interferometric modulators made according to the set of modified processing parameters may have improved performance and/or simpler drive schemes.
    • 根据特定一组处理参数制造的干涉式调制器可以具有非零偏移电压。 已经开发了一种用于修改处理参数以将非零偏移电压更接近零的过程。 例如,该过程可以涉及识别用于制造干涉式调制器的一组处理参数,其导致用于干涉式调制器的非零偏移电压。 然后可以修改该组处理参数以使非零偏移电压更接近零。 例如,修改处理参数集合可以包括修改用于制造干涉式调制器的一个或多个沉积参数,向干涉式调制器施加电流(例如,抵消电流)和/或退火干涉式调制器。 根据经修改的处理参数的集合制造的干涉式调制器可以具有改进的性能和/或更简单的驱动方案。