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1. 发明申请

US20100151680A1 Substrate carrier with enhanced temperature uniformity 审中-公开
标题翻译：衬底载体，具有增强的温度均匀性
公开(公告)号：US20100151680A1
公开(公告)日：2010-06-17
申请号：US12314809
申请日：2008-12-17
申请人： Shulin Wang , Gautam Ganguly , Marvin Keshner , Erik G. Vaaler , James Harroun , Paul McClelland
发明人： Shulin Wang , Gautam Ganguly , Marvin Keshner , Erik G. Vaaler , James Harroun , Paul McClelland
IPC分类号： H01L21/3205 , H01L21/67
CPC分类号： H01L21/6776 , C23C16/4581 , C23C16/4585 , C23C16/46 , C23C16/54 , H01L21/67109 , H01L21/67173 , H01L21/67346 , H01L21/67748 , H01L21/68721
摘要： A substrate carrier is used in an in-line fabrication such as Plasma Enhanced Chemical Vapor Deposition (PECVD) for application of thin film on substrates. The carrier is in thermal communication with the substrate and thereby provides heat sinking. The carrier further permits movement of the substrate past a deposition apparatus at a deposition station.
摘要翻译：衬底载体用于诸如等离子体增强化学气相沉积（PECVD）的在线制造，用于在衬底上施加薄膜。载体与衬底热连通，从而提供散热。载体还允许衬底在沉积站处移动通过沉积设备。

2. 发明申请

US20220376130A1 METHODS AND APPARATUS FOR REDUCING AS-DEPOSITEDAND METASTABLE DEFECTS IN AMORPHOUS SILICON 有权
公开(公告)号：US20220376130A1
公开(公告)日：2022-11-24
申请号：US17328458
申请日：2021-05-24
申请人： Gautam Ganguly
发明人： Gautam Ganguly
IPC分类号： H01L31/20 , H01L21/02 , H01L21/687 , H01J37/32 , C23C16/24 , C23C16/46 , C23C16/50
摘要： A method and apparatus for reducing as-deposited and metastable defects relative to amorphous silicon (a-Si) thin films, its alloys and devices fabricated therefrom that include heating an earth shield positioned around a cathode in a parallel plate plasma chemical vapor deposition chamber to control a temperature of a showerhead in the deposition chamber in the range of 350° C. to 600° C. An anode in the deposition chamber is cooled to maintain a temperature in the range of 50° C. to 450° C. at the substrate that is positioned at the anode. In the apparatus, a heater is embedded within the earth shield and a cooling system is embedded within the anode.

3. 发明授权

US11502217B1 Methods and apparatus for reducing as-deposited and metastable defects in Amorphousilicon 有权
公开(公告)号：US11502217B1
公开(公告)日：2022-11-15
申请号：US17328458
申请日：2021-05-24
申请人： Gautam Ganguly
发明人： Gautam Ganguly
IPC分类号： H01L31/18 , H01L31/20 , H01L21/02 , H01L21/687 , H01J37/32 , C23C16/24 , C23C16/46 , C23C16/50 , H01L37/02 , H01L29/786 , H01L31/0376 , H01L31/0445 , H01L31/075 , H01L31/076 , H01L27/146
摘要： A method and apparatus for reducing as-deposited and metastable defects relative to amorphous silicon (a-Si) thin films, its alloys and devices fabricated therefrom that include heating an earth shield positioned around a cathode in a parallel plate plasma chemical vapor deposition chamber to control a temperature of a showerhead in the deposition chamber in the range of 350° C. to 600° C. An anode in the deposition chamber is cooled to maintain a temperature in the range of 50° C. to 450° C. at the substrate that is positioned at the anode. In the apparatus, a heater is embedded within the earth shield and a cooling system is embedded within the anode.

4. 发明申请

US20090139566A1 FRONT TRANSPARENT CONDUCTOR ASSEMBLY FOR THIN-FILM PHOTOVOLTAIC CELLS AND METHOD 失效
标题翻译：用于薄膜光伏电池的前透明导体组件和方法
公开(公告)号：US20090139566A1
公开(公告)日：2009-06-04
申请号：US11947373
申请日：2007-11-29
申请人： Marvin S. Keshner , Paul McClelland , Rajeewa Arya , Gautam Ganguly
发明人： Marvin S. Keshner , Paul McClelland , Rajeewa Arya , Gautam Ganguly
IPC分类号： H01L31/04
CPC分类号： H01L31/1884 , H01L31/022483 , Y02E10/50
摘要： A front transparent conductor assembly and, in one embodiment, a photovoltaic cell, includes at least three transparent conductor layers. In one embodiment, first and second transparent conductors comprised of SnO2 are positioned above and below a third transparent conductor comprised of ZnO2. In one embodiment, the second transparent conductor layer is significantly thicker than either the first or third transparent conductor layers. In one embodiment of a photovoltaic cell incorporating such an assembly, a sealing layer of SiO2 is interposed between a superstrate and the first transparent conductor. In another embodiment, first and second intermediate layers of ZnSnO3 are incorporated into the assembly, with the first intermediate layer interposed between the first and second transparent conductors and with the second intermediate layer interposed between the second and third transparent conductors.
摘要翻译：在一个实施例中，前透明导体组件和光伏电池包括至少三个透明导体层。在一个实施例中，由SnO 2组成的第一和第二透明导体位于由ZnO 2组成的第三透明导体之上和之下。在一个实施例中，第二透明导体层比第一或第三透明导体层明显更厚。在包含这种组件的光伏电池的一个实施例中，SiO 2的密封层插入在衬底和第一透明导体之间。在另一个实施例中，ZnSnO 3的第一和第二中间层被结合到组件中，其中第一中间层介于第一和第二透明导体之间，并且第二中间层置于第二和第三透明导体之间。

5. 发明授权

US08026438B2 Front transparent conductor assembly for thin-film photovoltaic cells and method 失效
标题翻译：用于薄膜光伏电池的前透明导体组件及方法
公开(公告)号：US08026438B2
公开(公告)日：2011-09-27
申请号：US11947373
申请日：2007-11-29
申请人： Marvin S. Keshner , Paul McClelland , Rajeewa Arya , Gautam Ganguly
发明人： Marvin S. Keshner , Paul McClelland , Rajeewa Arya , Gautam Ganguly
IPC分类号： H01L31/0216
CPC分类号： H01L31/1884 , H01L31/022483 , Y02E10/50
摘要： A front transparent conductor assembly and, in one embodiment, a photovoltaic cell, includes at least three transparent conductor layers. In one embodiment, first and second transparent conductors comprised of SnO2 are positioned above and below a third transparent conductor comprised of ZnO2. In one embodiment, the second transparent conductor layer is significantly thicker than either the first or third transparent conductor layers. In one embodiment of a photovoltaic cell incorporating such an assembly, a sealing layer of SiO2 is interposed between a superstrate and the first transparent conductor. In another embodiment, first and second intermediate layers of ZnSnO3 are incorporated into the assembly, with the first intermediate layer interposed between the first and second transparent conductors and with the second intermediate layer interposed between the second and third transparent conductors.
摘要翻译：在一个实施例中，前透明导体组件和光伏电池包括至少三个透明导体层。在一个实施例中，由SnO 2组成的第一和第二透明导体位于由ZnO 2组成的第三透明导体之上和之下。在一个实施例中，第二透明导体层比第一或第三透明导体层明显更厚。在包含这种组件的光伏电池的一个实施例中，SiO 2的密封层插入在衬底和第一透明导体之间。在另一个实施例中，ZnSnO 3的第一和第二中间层被结合到组件中，其中第一中间层介于第一和第二透明导体之间，并且第二中间层置于第二和第三透明导体之间。

6. 发明授权

US06784361B2 Amorphous silicon photovoltaic devices 失效
标题翻译：非晶硅光电器件
公开(公告)号：US06784361B2
公开(公告)日：2004-08-31
申请号：US09957353
申请日：2001-09-20
申请人： David E. Carlson , Guang H. Lin , Gautam Ganguly
发明人： David E. Carlson , Guang H. Lin , Gautam Ganguly
IPC分类号： H01L31024
CPC分类号： H01L31/076 , B32B17/10036 , B32B17/10788 , H01L31/075 , H01L31/202 , H01L31/204 , H01L31/206 , H02S20/23 , Y02B10/12 , Y02E10/548 , Y02P70/521
摘要： This invention is a photovoltaic device comprising an intrinsic or i-layer of amorphous silicon and where the photovoltaic device is more efficient at converting light energy to electric energy at high operating temperatures than at low operating temperatures. The photovoltaic devices of this invention are suitable for use in high temperature operating environments.
摘要翻译：本发明是一种包含非晶硅的本征或i层的光伏器件，其中光伏器件在高工作温度下将光能转换成电能比在低工作温度下更有效。本发明的光伏器件适用于高温操作环境。

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