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    • 7. 发明授权
    • LED driving circuit and light emitting diode array device
    • LED驱动电路和发光二极管阵列器件
    • US08247980B2
    • 2012-08-21
    • US12262801
    • 2008-10-31
    • Young Jin LeeJoong Kon SonHyung Kun KimJung Ja YangGrigory Onushkin
    • Young Jin LeeJoong Kon SonHyung Kun KimJung Ja YangGrigory Onushkin
    • F21S4/00H05B37/00F21V33/00
    • H05B33/0821
    • There is provided an LED driving circuit. The LED driving circuit according to an aspect of the invention may include: at least one ladder circuit including: (n−1) number (here, n is a positive integer satisfying n≧2) of first branches provided between first and second junction points, and connected in-line with each other by n number of first middle junction points, (n−1) number of second branches arranged in parallel with the first branches, and connected in-line with each other by n number of second middle junction points between the first and second junction points, and n number of middle branches connecting m-th first and second middle junction points to each other, wherein at least one LED device is disposed on each of the first, second, and middle branches. Here, the number of LED devices included in each of the first and second branches is greater than the number of LED devices included in each of the middle branches.
    • 提供了LED驱动电路。 根据本发明的一个方面的LED驱动电路可以包括:至少一个梯形电路,包括:设置在第一和第二连接点之间的第一分支的(n-1)数(这里,n是满足n≥2的正整数) 并且通过与第一分支平行布置的n个第一中间连接点(n-1)个数量的第二分支彼此并联连接,并且通过n个第二中间连接线彼此直接连接 第一和第二连接点之间的点,以及将第m个第一和第二中间连接点彼此连接的n个中间分支,其中至少一个LED装置设置在第一,第二和中间分支中的每一个上。 这里,包括在第一和第二分支中的每个中的LED装置的数量大于包括在每个中间分支中的LED装置的数量。
    • 10. 发明授权
    • Group III nitride nanorod light emitting device and method of manufacturing thereof
    • III族氮化物纳米棒发光器件及其制造方法
    • US08455284B2
    • 2013-06-04
    • US13231415
    • 2011-09-13
    • Han Kyu SeongHun Jae ChungJung Ja YangCheol Soo Sone
    • Han Kyu SeongHun Jae ChungJung Ja YangCheol Soo Sone
    • H01L21/00
    • H01L33/32H01L33/08H01L33/16H01L33/24
    • A group III nitride nanorod light emitting device and a method of manufacturing thereof. The method includes preparing a substrate, forming an insulating film including one or more openings exposing parts of the substrate on the substrate, growing first conductive group III nitride nanorod seed layers on the substrate exposed through the openings by supplying a group III source gas and a nitrogen (N) source gas thereto, growing first conductive group III nitride nanorods on the first conductive group III nitride nanorod seed layers by supplying the group III source gas and an impurity source gas in a pulse mode and continuously supplying the N source gas, forming an active layer on a surface of each of the first conductive group III nitride nanorods, and forming a second conductive nitride semiconductor layer on the active layer.
    • 一种III族氮化物纳米棒发光器件及其制造方法。 该方法包括:准备衬底,形成绝缘膜,该绝缘膜包括一个或多个开口,暴露在衬底上的衬底的部分;通过提供第III族源气体,在通过开口暴露的衬底上生长第一导电III族氮化物纳米棒种子层; 通过向第一导电III族氮化物纳米棒种子层生长第一导电III族氮化物纳米棒,通过以脉冲模式提供第III族源气体和杂质源气体并连续地供给N源气体,形成氮 在所述第一导电III族氮化物纳米棒中的每一个的表面上的有源层,以及在所述有源层上形成第二导电氮化物半导体层。