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    • 7. 发明申请
    • QUANTUM CASCADE LASER
    • 量子CASCADE激光
    • US20130322479A1
    • 2013-12-05
    • US13909611
    • 2013-06-04
    • HAMAMATSU PHOTONICS K.K.
    • Atsushi SUGIYAMANaota AKIKUSATadataka EDAMURA
    • H01S5/34
    • H01S5/3401B82Y20/00H01S5/0071H01S5/028H01S5/0282H01S5/0287H01S5/12H01S5/141H01S5/3402
    • A quantum cascade laser includes a semiconductor substrate, and an active layer that is provided on the substrate, and has a cascade structure in which emission layers and injection layers are alternately laminated by multistage-laminating unit laminate structures each consisting of the quantum well emission layer and the injection layer, the active layer generates light by intersubband transition in a quantum well structure. Further, in a laser cavity structure for light with a predetermined wavelength to be generated in the active layer, reflection control films including at least one layer of CeO2 film are formed on a first end face and a second end face facing each other. Thereby, it is possible to realize a quantum cascade laser capable of preferably realizing reflectance control for light within a mid-infrared wavelength region on the laser device end face.
    • 量子级联激光器包括半导体衬底和设置在衬底上的有源层,并且具有级联结构,其中发射层和注入层通过多级层压单元层叠结构交替层叠,每个层叠结构由量子阱发射层 和注入层,有源层通过量子阱结构中的子带间跃迁产生光。 此外,在有源层中产生具有预定波长的光的激光腔结构中,在彼此相对的第一端面和第二端面上形成包括至少一层CeO 2膜的反射控制膜。 由此,能够实现能够优选实现激光装置端面的中红外波长区域内的光的反射率控制的量子级联激光器。