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    • 8. 发明授权
    • Electron multiplier body, photomultiplier tube, and photomultiplier
    • 电子倍增器体,光电倍增管和光电倍增管
    • US09514920B2
    • 2016-12-06
    • US15058199
    • 2016-03-02
    • HAMAMATSU PHOTONICS K.K.
    • Shinya HattoriMotohiro SuyamaHiroshi Kobayashi
    • H01J43/04H01J43/16
    • H01J43/16H01J43/24
    • An electron multiplier body including a main body portion, an electron incidence portion, and a channel, in which the channel includes a first inner surface and a second inner surface facing each other, the first inner surface includes a convex first bent portion and a concave second bent portion, and a plurality of first inclined surfaces, the second inner surface includes a convex third bent portion and a concave fourth bent portion, and a plurality of second inclined surfaces, and an interval between a tip of the first bent portion and a tip of the third bent portion, a distance between the first inclined surface and the second inclined surfaces facing each other, an angle between a pair of first inclined surfaces defining the first bent portion, and a length of the channel satisfy predetermined expressions.
    • 一种电子倍增器体,包括主体部分,电子入射部分和沟道,其中沟道包括彼此面对的第一内表面和第二内表面,第一内表面包括凸起的第一弯曲部分和凹部 第二弯曲部分和多个第一倾斜表面,所述第二内表面包括凸起的第三弯曲部分和凹入的第四弯曲部分,以及多个第二倾斜表面,并且所述第一弯曲部分的尖端和 所述第三弯曲部的前端,所述第一倾斜面与所述第二倾斜面之间的距离彼此相对,所述一对限定所述第一弯曲部的第一倾斜面与所述通道的长度之间的角度满足预定的表达。
    • 10. 发明授权
    • Ion detector
    • 离子检测器
    • US08975592B2
    • 2015-03-10
    • US13744863
    • 2013-01-18
    • Hamamatsu Photonics K.K.
    • Hiroshi KobayashiMotohiro SuyamaMasahiro KotaniTakayuki Ohmura
    • G01T1/20G01T1/28
    • G01T1/28
    • An ion detector 1A for detecting positive ions is provided with a chamber 2 having an ion entrance 3 which allows positive ions to enter, a conversion dynode 9 which is disposed in the chamber 2 and to which a negative potential is applied, and an avalanche photodiode 30 that is disposed in the chamber 2 and has an electron incident surface 30a which is opposed to the conversion dynode 9 and also into which secondary electrons emitted from the conversion dynode 9 are made incident. The electron incident surface 30a is located closer to the conversion dynode 9 than a positioning part 14 which supports the avalanche photodiode 30 in the grounded chamber 2.
    • 用于检测正离子的离子检测器1A设置有具有允许正离子进入的离子入口3的室2,设置在室2中并且施加负电位的转换倍增极9和雪崩光电二极管 30,其设置在室2中,并且具有与转换倍增极9相对的电子入射表面30a,并且入射从转换倍增极9发射的二次电子。 电子入射表面30a比在接地室2中支撑雪崩光电二极管30的定位部分14更靠近转换倍增极9。