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    • 8. 发明申请
    • TUNNELING MAGNETORESISTIVE (TMR) SENSOR WITH A SOFT BIAS LAYER
    • 具有软偏移层的隧道磁传感器(TMR)传感器
    • US20160163338A1
    • 2016-06-09
    • US14559856
    • 2014-12-03
    • HGST Netherlands B.V.
    • Kuok S. HoNian JiQuang LeYing LiSimon H. LiaoGuangli LiuXiaoyong LiuSuping SongShuxia WangHualiang Yu
    • G11B5/39G11B5/127
    • G11B5/3932G11B5/3909G11B5/3912
    • An apparatus according to one embodiment includes a read sensor. The read sensor has an antiferromagnetic layer (AFM), a first antiparallel magnetic layer (AP1 ) positioned above the AFM layer in a first direction oriented along a media-facing surface and perpendicular to a track width direction, a non-magnetic layer positioned above the AP1 in the first direction, a second antiparallel magnetic layer (AP2) positioned above the non-magnetic layer in the first direction, a harrier layer positioned above the AP2 in the first direction, and a free layer positioned above the barrier layer in the first direction. A soft bias layer is positioned behind at least a portion of the free layer in an element height direction normal to the media-facing surface, the soft bias layer including a soft magnetic material configured to compensate for a magnetic coupling of the free layer with the AP2.
    • 根据一个实施例的装置包括读取传感器。 读取传感器具有反铁磁层(AFM),位于AFM层上方的第一反向磁性层(AP1),沿着面向介质的表面定向并垂直于轨道宽度方向的第一方向,位于上方的非磁性层 在第一方向上的AP1,位于第一方向上的非磁性层上方的第二反并联磁性层(AP2),位于第一方向上的AP2上方的吸收层和位于第一方向上的阻挡层上方的自由层 第一个方向 柔性偏置层位于垂直于面向媒体的表面的元件高度方向上位于自由层的至少一部分之后,软偏置层包括软磁材料,其被配置为补偿自由层与 AP2。
    • 10. 发明授权
    • Reader sensor having a recessed antiferromagnetic (AFM) pinning layer
    • 读取器传感器具有凹入的反铁磁(AFM)钉扎层
    • US09007729B1
    • 2015-04-14
    • US14265187
    • 2014-04-29
    • HGST Netherlands B.V.
    • Kuok S. HoSuping Song
    • G11B5/39
    • G11B5/39G11B5/3929
    • In one embodiment, a read sensor includes an antiferromagnetic (AFM) pinning layer, the AFM pinning layer being recessed from a media-facing surface in an element height direction to a first height, a first antiparallel pinned multilayer (AP1) positioned above the AFM pinning layer and extending beyond the first height to the media-facing surface, a second antiparallel pinned layer (AP2) positioned above the AP1 and extending beyond the first height to the media-facing surface, and a free layer positioned at the media-facing surface above the AP2 and extending from the media-facing surface in the element height direction to a second height, wherein the element height direction is perpendicular to the media-facing surface, wherein the AP1 and the AP2 are not recessed from the media-facing surface, and wherein the AFM, the AP1, and the AP2 extend beyond the free layer in the element height direction beyond the second height.
    • 在一个实施例中,读取传感器包括反铁磁(AFM)钉扎层,AFM钉扎层从元件高度方向上的面向介质的表面凹陷到第一高度,位于AFM上方的第一反平行钉扎多层(AP1) 钉扎层并延伸超过第一高度到面向介质的表面,位于AP1上方并延伸超过第一高度并延伸到面向介质的表面的第二反平行钉扎层(AP2),以及位于介质面向 表面在AP2上方并且在元件高度方向上从面向媒体的表面延伸到第二高度,其中元件高度方向垂直于面向介质的表面,其中AP1和AP2不从介质面向 表面,并且其中AFM,AP1和AP2延伸超过元件高度方向上的自由层超过第二高度。