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1. 发明授权

US11251018B2 Scanning electron microscope 有权
公开(公告)号：US11251018B2
公开(公告)日：2022-02-15
申请号：US17255724
申请日：2018-07-02
申请人： Hitachi High-Tech Corporation
发明人： Yasunari Sohda , Kaori Bizen , Yusuke Abe , Kenji Tanimoto
IPC分类号： H01J37/28 , H01J37/12 , H01J37/147 , H01J37/153 , H01J37/21 , H01J37/244 , H01J37/26
摘要： Provided is a scanning electron microscope which can perform high-speed focus correction even when an electron beam having high energy is used. The scanning electron microscope includes an electron optical system including an electron source 100 that emits an electron beam and an objective lens 113, a sample stage 1025 which is disposed on a stage 115 and on which a sample 114 is placed, a backscattered electron detector 1023 which is disposed between the objective lens and the sample stage and is configured to detect backscattered electrons 1017 emitted due to interaction between the electron beam and the sample, a backscattered electron detection system control unit 138 which is provided corresponding to the backscattered electron detector and is configured to apply a voltage to the backscattered electron detector, and a device control calculation device 146. The objective lens has an opening in a stage direction, and the device control calculation device performs focus correction of the electron beam by controlling the voltage applied to the backscattered electron detector from the backscattered electron detection system control unit.

2. 发明授权

US11610756B2 Charged particle beam apparatus and control method 有权
公开(公告)号：US11610756B2
公开(公告)日：2023-03-21
申请号：US17497384
申请日：2021-10-08
申请人： Hitachi High-Tech Corporation
发明人： Kaori Bizen , Ryota Watanabe , Yuzuru Mizuhara , Daisuke Bizen
IPC分类号： H01J37/24 , H01J37/147 , H01J37/244 , H01J37/22 , H01J37/28
摘要： A charged particle beam apparatus acquires an image that is not affected by movement of a stage at a high speed. The apparatus includes: a charged particle source for irradiating a sample with a charged particle beam; a stage on which the sample is placed; a measurement unit for measuring a movement amount of the stage; a deflector; a deflector offset control unit, which is a feedback control unit for adjusting a deflection amount of the deflector according to the movement amount of the stage; a plurality of detectors for detecting secondary charged particles emitted from the sample by irradiation of the charged particle beam; a composition ratio calculation unit that calculates composition ratios of signals output from the detectors based on the deflection amount adjusted by the feedback control unit; and an image generation unit for generating a composite image by compositing the signals using the composition ratio.

3. 发明授权

US11276554B2 Scanning electron microscope and method for measuring pattern 有权
公开(公告)号：US11276554B2
公开(公告)日：2022-03-15
申请号：US16941806
申请日：2020-07-29
申请人： Hitachi High-Tech Corporation
发明人： Takeyoshi Ohashi , Yusuke Abe , Kenji Tanimoto , Kaori Bizen , Hyejin Kim
IPC分类号： H01J37/28 , H01J37/244 , H01J37/12
摘要： A scanning electron microscope includes an electron-optical system including an electron source and an objective lens, a stage on which a sample is placed, a secondary electron detector disposed adjacent to the electron source relative to the objective lens and configured to detect secondary electrons, a backscattered electron detector disposed between the objective lens and the stage and configured to detect backscattered electrons, a backscattered electron detection system controller configured to apply a voltage to the backscattered electron detector, and a device-control computer configured to detect a state of an electrical charge carried by the backscattered electron detector based on signal intensity at the secondary electron detector when the primary electrons are applied to the sample with a predetermined voltage applied to the backscattered electron detector.

4. 发明授权

US11456150B2 Charged particle beam device 有权
公开(公告)号：US11456150B2
公开(公告)日：2022-09-27
申请号：US17210805
申请日：2021-03-24
申请人： Hitachi High-Tech Corporation
发明人： Kaori Bizen , Yuzuru Mizuhara , Minoru Yamazaki , Daisuke Bizen , Noritsugu Takahashi
IPC分类号： H01J37/244 , H01J37/28 , H01J37/22
摘要： A charged particle beam device capable of generating an image having uniform image quality in a field of view is provided. The charged particle beam device includes: a beam source configured to irradiate a sample with a charged particle beam; a diaphragm including an opening used for angle discrimination of secondary charged particles emitted from the sample; a first detector provided closer to the sample than the diaphragm, and configured to detect a part of the secondary charged particles; a second detector provided closer to the beam source than the diaphragm, and configured to detect secondary charged particles passing through the opening; an image generation unit configured to generate an image based on a first signal output from the first detector or a second signal output from the second detector; and a composite ratio calculation unit configured to calculate a composite ratio for each position in a field of view based on the first signal or the second signal with respect to a calibration sample that is a sample having a flat surface. The image generation unit generates a composite image by synthesizing the first signal and the second signal with respect to an observation sample using the composite ratio.

5. 发明授权

US11435178B2 Calibration sample, electron beam adjustment method and electron beam apparatus using same 有权
公开(公告)号：US11435178B2
公开(公告)日：2022-09-06
申请号：US16638634
申请日：2017-08-25
申请人： HITACHI HIGH-TECH CORPORATION
发明人： Yasunari Sohda , Yoshinori Nakayama , Kaori Bizen , Hiroya Ohta , Yusuke Abe
IPC分类号： G01B15/00 , H01J37/10 , H01J37/147 , H01J37/20 , H01J37/244 , H01J37/28
摘要： To implement a calibration sample by which an incident angle can be measured with high accuracy, an electron beam adjustment method, and an electron beam apparatus using the calibration sample. To adjust an electron beam using a calibration sample, the calibration sample includes a silicon single crystal substrate 201 whose upper surface is a {110} plane, a first recess structure 202 opening in the upper surface and extending in a first direction, and a second recess structure 203 opening in the upper surface and extending in a second direction intersecting the first direction, in which the first recess structure and the second recess structure each include a first side surface and a first bottom surface that intersects the first side surface, and a second side surface and a second bottom surface that intersects the second side surface, the first side surface and the second side surface are {111} planes, and the first bottom surface and the second bottom surface are crystal planes different from the {110} planes.

6. 发明申请

US20210043420A1 SCANNING ELECTRON MICROSCOPE AND METHOD FOR MEASURING PATTERN 有权
公开(公告)号：US20210043420A1
公开(公告)日：2021-02-11
申请号：US16941806
申请日：2020-07-29
申请人： Hitachi High-Tech Corporation
发明人： Takeyoshi Ohashi , Yusuke Abe , Kenji Tanimoto , Kaori Bizen , Hyejin Kim
IPC分类号： H01J37/28 , H01J37/244 , H01J37/12
摘要： A scanning electron microscope includes an electron-optical system including an electron source and an objective lens, a stage on which a sample is placed, a secondary electron detector disposed adjacent to the electron source relative to the objective lens and configured to detect secondary electrons, a backscattered electron detector disposed between the objective lens and the stage and configured to detect backscattered electrons, a backscattered electron detection system controller configured to apply a voltage to the backscattered electron detector, and a device-control computer configured to detect a state of an electrical charge carried by the backscattered electron detector based on signal intensity at the secondary electron detector when the primary electrons are applied to the sample with a predetermined voltage applied to the backscattered electron detector.

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