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1. 发明授权

US11424106B2 Plasma processing apparatus 有权
公开(公告)号：US11424106B2
公开(公告)日：2022-08-23
申请号：US16463531
申请日：2018-05-28
申请人： HITACHI HIGH-TECH CORPORATION
发明人： Yuki Kondo , Kenetsu Yokogawa , Masahito Mori , Satoshi Une , Kazunori Nakamoto
IPC分类号： H01J37/32 , H01L21/3065 , H05H1/46
摘要： Provided is a technique capable of reducing a variation in processing in an in-plane direction of a sample and improving a yield of processing. A plasma processing apparatus 1 includes a first electrode (a base material 110B) disposed in a sample stage 110, a ring-shaped second electrode (a conductive ring 114) disposed surrounding an outer peripheral side of an upper surface portion 310 (a dielectric film portion 110A) of the sample stage 110, a dielectric ring-shaped member (a susceptor ring 113) that covers the second electrode and is disposed surrounding an outer periphery of the upper surface portion 310, a plurality of power supply paths that supply high frequency power from a high frequency power supply to the first electrode and the second electrode respectively, and a matching device 117 disposed on a power supply path to the second electrode. Further, a first position (A1) and a grounding position between the second electrode and the matching device 117 on the power supply path to the second electrode are electrically connected via a resistor 118 having a predetermined value.

2. 发明授权

US10763088B2 Vacuum processing apparatus 有权
公开(公告)号：US10763088B2
公开(公告)日：2020-09-01
申请号：US16111752
申请日：2018-08-24
申请人： HITACHI HIGH-TECH CORPORATION
发明人： Takashi Uemura , Takamasa Ichino , Kazunori Nakamoto , Kohei Sato
IPC分类号： H01J37/32
摘要： Provided is a vacuum processing apparatus that improves an operation rate or efficiency of processing. The vacuum processing apparatus includes: a cylindrical pedestal which is disposed below a base plate that constitutes a specimen stage and is made of a metal, whose internal space is under an atmospheric pressure, and which is connected to the base plate in a state in which the base plate, and a base member and an insulating member fastened to the base plate are placed; a plate-shaped beam part which is disposed in the space of the pedestal with a gap from a lower surface of the base plate, and extends outward from the center of the space in a T or Y shape; a plurality of pins that pass through the beam part, the base plate, the insulating member, and the base member, support the specimen on tips thereof on an upper side of the specimen stage, and vertically move the specimen; a pin drive unit that is mounted on a lower surface of the center of the beam part; and a seal that is disposed around a through-hole through which each of the plurality of pins passes, and airtightly seals the inside and the outside.

3. 发明授权

US11315759B2 Plasma processing apparatus 有权
公开(公告)号：US11315759B2
公开(公告)日：2022-04-26
申请号：US16646696
申请日：2019-02-08
申请人： HITACHI HIGH-TECH CORPORATION
发明人： Takamasa Ichino , Kohei Sato , Kazunori Nakamoto
IPC分类号： H01J37/32
摘要： A plasma processing apparatus includes a processing chamber in which a wafer 1 is processed by using plasma, a radio-frequency power supply that supplies radio-frequency power for generating the plasma, a sample table 2 which is arranged in the processing chamber and in which the wafer 1 is mounted, and a DC power supply 106 which is electrically connected to the sample table 2 and which causes the sample table 2 to generate a suction force. The sample table 2 includes a protruded portion 201a that sucks the wafer 1 by the suction force and a level different portion 201b protruding from a lower portion of the protruded portion 201a. A ring 5 that can be in contact with a lower surface of the wafer 1 is provided outside the protruded portion 201a. A space portion 7 formed by the wafer 1, the protruded portion 201a, and the ring 5 is sealed in a state in which the wafer 1 is sucked to an upper surface of the protruded portion 201a of the sample table 2.

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