专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US10692784B2 Vacuum processing apparatus 有权
公开(公告)号：US10692784B2
公开(公告)日：2020-06-23
申请号：US15715717
申请日：2017-09-26
申请人： HITACHI HIGH-TECH CORPORATION
发明人： Takamasa Ichino , Kohei Sato
IPC分类号： H01L21/66 , H01L21/673 , H01L21/67 , H01L21/677
摘要： A sample stage which is disposed inside a vacuum processing chamber and on which a wafer to be processed is placed on an upper surface thereof includes a metallic base material, a metallic substrate insulated from the base material below the base material with an insulating member interposed therebetween, and a base which is disposed below the substrate, has a space set to an atmospheric pressure therein, and is connected to the substrate by an opening above the space being covered, the insulating member has a ring-shaped member made of ceramic with a seal member airtightly sealing a part between a space of an inner peripheral side communicating with an outside of the vacuum vessel and set to the atmospheric pressure and an inside of the processing chamber interposed between the base material and an outer peripheral side portion of the substrate, a plurality of temperature sensors installed to penetrate the substrate and inserted into the base material is included, and the base material, the insulating member, and the substrate are configured to be integrally removable to an outside of the processing chamber in a state in which the plurality of temperature sensors is installed.

2. 发明申请

US20220115216A1 PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD 有权
公开(公告)号：US20220115216A1
公开(公告)日：2022-04-14
申请号：US17276730
申请日：2020-04-21
申请人： Hitachi High-Tech Corporation
发明人： Takamasa Ichino , Kohei Sato
IPC分类号： H01J37/32 , H01L21/3065
摘要： A plasma processing apparatus or method that improves the yield of wafer processing, including a sample stand on which the wafer is mounted; plural heaters which are arranged in three or more regions in the radial direction including a circular region concentrically arranged around the center and ring-like regions surrounding the outer periphery on plural radii in the radial direction from the center toward the outer peripheral side, and which include one arranged in each of plural arc-like regions divided in the circumferential direction around the center of at least one of the ring-like regions; plural temperature sensors arranged in the radial direction and the number of which is smaller than that of heaters; and a control unit which adjusts the output of each of the plural heaters according to the output from the temperature sensor so that the temperature of the sample stand becomes closer to a target value.

3. 发明授权

US10763088B2 Vacuum processing apparatus 有权
公开(公告)号：US10763088B2
公开(公告)日：2020-09-01
申请号：US16111752
申请日：2018-08-24
申请人： HITACHI HIGH-TECH CORPORATION
发明人： Takashi Uemura , Takamasa Ichino , Kazunori Nakamoto , Kohei Sato
IPC分类号： H01J37/32
摘要： Provided is a vacuum processing apparatus that improves an operation rate or efficiency of processing. The vacuum processing apparatus includes: a cylindrical pedestal which is disposed below a base plate that constitutes a specimen stage and is made of a metal, whose internal space is under an atmospheric pressure, and which is connected to the base plate in a state in which the base plate, and a base member and an insulating member fastened to the base plate are placed; a plate-shaped beam part which is disposed in the space of the pedestal with a gap from a lower surface of the base plate, and extends outward from the center of the space in a T or Y shape; a plurality of pins that pass through the beam part, the base plate, the insulating member, and the base member, support the specimen on tips thereof on an upper side of the specimen stage, and vertically move the specimen; a pin drive unit that is mounted on a lower surface of the center of the beam part; and a seal that is disposed around a through-hole through which each of the plurality of pins passes, and airtightly seals the inside and the outside.

4. 发明授权

US10741368B2 Plasma processing apparatus 有权
公开(公告)号：US10741368B2
公开(公告)日：2020-08-11
申请号：US16110525
申请日：2018-08-23
申请人： HITACHI HIGH-TECH CORPORATION
发明人： Takumi Tandou , Takamasa Ichino , Kenetsu Yokogawa
IPC分类号： H01J37/32 , H01L21/67 , H01L21/683 , H01L21/687
摘要： A plasma processing apparatus including: a processing chamber; a sample stage; a vacuum exhaust unit; and a plasma generation unit, the sample stage includes: a first metallic base material having a refrigerant flow path formed therein; a second metallic base material disposed above the first metallic base material and has a lower thermal conductivity than the first metallic base material; and a plurality of lift pins vertically moving the object to be processed with respect to the sample stage. A plurality of through-holes through which the plurality of the lift pins passes is formed in the first and the second metallic base material, and a boss, which electrically insulates the lift pin from the first and the second metallic base material and is formed using an insulating member having a higher thermal conductivity than the second metallic base material, is inserted into each of the plurality of through-holes.

5. 发明授权

US11315759B2 Plasma processing apparatus 有权
公开(公告)号：US11315759B2
公开(公告)日：2022-04-26
申请号：US16646696
申请日：2019-02-08
申请人： HITACHI HIGH-TECH CORPORATION
发明人： Takamasa Ichino , Kohei Sato , Kazunori Nakamoto
IPC分类号： H01J37/32
摘要： A plasma processing apparatus includes a processing chamber in which a wafer 1 is processed by using plasma, a radio-frequency power supply that supplies radio-frequency power for generating the plasma, a sample table 2 which is arranged in the processing chamber and in which the wafer 1 is mounted, and a DC power supply 106 which is electrically connected to the sample table 2 and which causes the sample table 2 to generate a suction force. The sample table 2 includes a protruded portion 201a that sucks the wafer 1 by the suction force and a level different portion 201b protruding from a lower portion of the protruded portion 201a. A ring 5 that can be in contact with a lower surface of the wafer 1 is provided outside the protruded portion 201a. A space portion 7 formed by the wafer 1, the protruded portion 201a, and the ring 5 is sealed in a state in which the wafer 1 is sucked to an upper surface of the protruded portion 201a of the sample table 2.

6. 发明授权

US11094509B2 Plasma processing apparatus 有权
公开(公告)号：US11094509B2
公开(公告)日：2021-08-17
申请号：US15437040
申请日：2017-02-20
申请人： HITACHI HIGH-TECH CORPORATION
发明人： Makoto Satake , Kenetsu Yokogawa , Tadayoshi Kawaguchi , Takamasa Ichino
IPC分类号： H01J37/32 , C23C16/509 , C23C16/52 , H01L21/67
摘要： The features of the present invention are that a plasma processing apparatus includes: a process chamber in which a sample is plasma-processed; a dielectric window which airtightly seals an upper part of the process chamber; an inductive antenna which is disposed at an upper part of the dielectric window and forms an induction magnetic field; a radio frequency power source which supplies radio frequency power to the inductive antenna; and a Faraday shield to which radio frequency power is supplied from the radio frequency power source and which is disposed between the dielectric window and the inductive antenna, and the plasma processing apparatus further includes a monitoring unit which monitors a current flowing in the Faraday shield and a control unit which controls the monitored current.

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式