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1. 发明授权

US08969211B2 Method and apparatus for plasma processing 有权
标题翻译：等离子体处理方法和装置
公开(公告)号：US08969211B2
公开(公告)日：2015-03-03
申请号：US13960831
申请日：2013-08-07
申请人： Hitachi High-Technologies Corporation
发明人： Satoru Muto , Tetsuo Ono , Yasuo Ohgoshi , Hirofumi Eitoku
IPC分类号： H01L21/302 , H01L21/461 , H01L21/3065
CPC分类号： H01J37/32137 , H01J37/32082 , H01J37/32146 , H01J37/32165 , H01J37/32532 , H01J37/32715 , H01J2237/334 , H01L21/3065 , H01L21/31116 , H01L21/32137 , H01L21/67069 , H01L29/66795
摘要： The present invention provides a plasma processing method that uses a plasma processing apparatus including a plasma processing chamber in which a sample is plasma processed, a first radio-frequency power supply that supplies a first radio-frequency power for generating plasma, and a second radio-frequency power supply that supplies a second radio-frequency power to a sample stage on which the sample is mounted, wherein the plasma processing method includes the steps of modulating the first radio-frequency power by a first pulse; and controlling a plasma dissociation state to create a desired dissociation state by gradually controlling a duty ratio of the first pulse as a plasma processing time elapses.
摘要翻译：本发明提供一种使用等离子体处理装置的等离子体处理方法，该等离子体处理装置包括等离子体处理室，其中等离子体处理样品，提供用于产生等离子体的第一射频电力的第一射频电源和第二无线电其中所述等离子体处理方法包括以下步骤：通过第一脉冲对所述第一射频功率进行调制;其中，所述等离子体处理方法包括以下步骤：并且通过逐渐控制作为等离子体处理时间的第一脉冲的占空比来控制血浆解离状态以产生期望的解离状态。

2. 发明授权

US10727088B2 Plasma processing apparatus and plasma processing method 有权
公开(公告)号：US10727088B2
公开(公告)日：2020-07-28
申请号：US15284668
申请日：2016-10-04
申请人： HITACHI HIGH-TECHNOLOGIES CORPORATION
发明人： Michikazu Morimoto , Yasuo Ohgoshi , Yuuzou Oohirabaru , Tetsuo Ono
IPC分类号： H01L21/00 , H01L21/67 , H01L21/3065 , H01L21/3213 , H01L21/311 , H01J37/32
摘要： The present invention provides a plasma processing apparatus having a radio frequency power supply supplying time-modulated radio frequency power which is controllable widely with high precision, and a plasma processing method using the plasma processing apparatus. The plasma processing apparatus includes: a vacuum chamber; a first radio frequency power supply for generating plasma in the vacuum chamber; a sample holder disposed in the vacuum chamber, on which a sample is placed; and a second radio frequency power supply supplying radio frequency power to the sample holder, wherein at least one of the first radio frequency power supply and the second radio frequency power supply supplies time-modulated radio frequency power, one of parameters of controlling the time-modulation has two or more different control ranges, and one of the control ranges is a control range for a high-precision control.

3. 发明授权

US10522331B2 Plasma processing apparatus 有权
公开(公告)号：US10522331B2
公开(公告)日：2019-12-31
申请号：US15333669
申请日：2016-10-25
申请人： HITACHI HIGH-TECHNOLOGIES CORPORATION
发明人： Yasuo Ohgoshi , Michikazu Morimoto , Yuuzou Oohirabaru , Tetsuo Ono
IPC分类号： H01J37/32 , H01L21/67 , H01L21/3065
摘要： A plasma processing apparatus includes a processing chamber for processing a sample with a plasma, an RF power supply for generating the plasma within the processing chamber, an RF bias power supply for supplying RF bias power to a sample stage on which the sample is mounted, a pulse generation unit for creating first pulses for modulating the output from the RF power supply for generating the plasma and second pulses for modulating the output from the RF bias power supply, and a controller for providing control of the processing of the sample with the sample. The pulse generation unit creates the first pulses and the second pulses synchronized based on a pulse delay time transmitted from the controller. The pulse delay time is established to delay the second pulses relative to the first pulses.

4. 发明申请

US20150144594A1 Plasma Processing Apparatus and Plasma Processing Method 审中-公开
标题翻译：等离子体处理装置和等离子体处理方法
公开(公告)号：US20150144594A1
公开(公告)日：2015-05-28
申请号：US14609807
申请日：2015-01-30
申请人： Hitachi High-Technologies Corporation
发明人： Shunsuke Kanazawa , Naoki Yasui , Michikazu Morimoto , Yasuo Ohgoshi
IPC分类号： H01J37/32 , C23F4/00
CPC分类号： H01J37/32311 , C23F4/00 , H01J37/32146 , H01J37/32155 , H01J37/32165 , H01J37/32302 , H01L21/32137
摘要： A plasma processing apparatus includes a processing chamber which plasma-processes a sample, a first high-frequency power supply which supplies first high-frequency power for plasma generation to the processing chamber, a second high-frequency power supply which supplies second high-frequency power to a sample stage on which the sample is placed and a pulse generation device which generate first pulses for time-modulating the first high-frequency power and second pulses for time-modulating the second high-frequency power. The pulse generation device includes a control device which controls the first and second pulses so that frequency of the first pulses is higher than frequency of the second pulses and the on-period of the second pulse is contained in the on-period of the first pulse.
摘要翻译：等离子体处理装置包括对样品进行等离子体处理的处理室，向处理室供给用于等离子体生成的第一高频电力的第一高频电源，提供第二高频电源的第二高频电源放置样品的样品级的功率和产生用于对第一高频功率进行时间调制的第一脉冲的脉冲产生装置和用于对第二高频功率进行时间调制的第二脉冲。脉冲发生装置包括控制装置，其控制第一和第二脉冲，使得第一脉冲的频率高于第二脉冲的频率，并且第二脉冲的导通周期包含在第一脉冲的导通周期中。

5. 发明授权

US09514967B2 Plasma processing apparatus 有权
标题翻译：等离子体处理装置
公开(公告)号：US09514967B2
公开(公告)日：2016-12-06
申请号：US13742409
申请日：2013-01-16
申请人： Hitachi High-Technologies Corporation
发明人： Yasuo Ohgoshi , Michikazu Morimoto , Yuuzou Oohirabaru , Tetsuo Ono
IPC分类号： C23C16/00 , C23F1/00 , H01L21/306 , H01L21/67 , H01J37/32 , H01L21/3065
CPC分类号： H01J37/32146 , H01J37/32174 , H01J37/32192 , H01J37/32706 , H01J37/32935 , H01J2237/327 , H01J2237/334 , H01L21/3065 , H01L21/67069
摘要： A plasma processing apparatus includes a processing chamber for processing a sample with a plasma, an RF power supply for generating the plasma within the processing chamber, an RF bias power supply for supplying RF bias power to a sample stage on which the sample is mounted, a pulse generation unit for creating first pulses for modulating the output from the RF power supply for generating the plasma and second pulses for modulating the output from the RF bias power supply, and a controller for providing control of the processing of the sample with the sample. The pulse generation unit creates the first pulses and the second pulses synchronized based on a pulse delay time transmitted from the controller. The pulse delay time is established to delay the second pulses relative to the first pulses.
摘要翻译：等离子体处理装置包括用于处理等离子体的样品的处理室，用于在处理室内产生等离子体的RF电源，用于向安装有样品的样品台提供RF偏置功率的RF偏置电源，脉冲产生单元，用于产生用于调制来自RF电源的用于产生等离子体的输出的第一脉冲和用于调制来自RF偏置电源的输出的第二脉冲，以及用于提供样品对样品的处理的控制的控制器。脉冲发生单元产生基于从控制器发送的脉冲延迟时间同步的第一脉冲和第二脉冲。建立脉冲延迟时间以相对于第一脉冲延迟第二脉冲。

6. 发明申请

US20160181131A1 PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD 审中-公开
标题翻译：等离子体加工设备和等离子体处理方法
公开(公告)号：US20160181131A1
公开(公告)日：2016-06-23
申请号：US15056142
申请日：2016-02-29
申请人： HITACHI HIGH-TECHNOLOGIES CORPORATION
发明人： Michikazu Morimoto , Yasuo Ohgoshi , Yuuzou Oohirabaru , Tetsuo Ono
IPC分类号： H01L21/67 , H01J37/32
摘要： Provided are a plasma processing apparatus with a radio-frequency power supply supplying temporally modulated intermittent radio-frequency power which can be controlled with high precision in a wide repetition frequency band, and a plasma processing method using the plasma processing apparatus.A plasma processing apparatus includes: a vacuum vessel; a plasma generating section plasma in the vacuum vessel; a stage installed in the vacuum vessel and mounted with a sample; and a radio-frequency power supply applying temporally modulated intermittent radio-frequency power to the stage, wherein the radio-frequency power supply has two or more different frequency bands and temporally modulates the radio-frequency power by a repetition frequency which has the same range of analog signals used in each of the frequency band.
摘要翻译：提供一种等离子体处理装置，其具有提供可在宽重复频带中高精度地控制的时间调制的间歇射频功率的射频电源，以及使用等离子体处理装置的等离子体处理方法。一种等离子体处理装置，包括：真空容器; 真空容器中的等离子体产生部等离子体; 安装在真空容器中并安装有样品的阶段; 以及向所述载波台施加临时调制的间歇射频功率的射频电源，其中，所述射频电源具有两个以上的不同频带，并且通过具有相同范围的重复频率对所述射频功率进行时间调制在每个频带中使用的模拟信号。

7. 发明授权

US08992724B2 Plasma processing apparatus and plasma processing method 有权
标题翻译：等离子体处理装置和等离子体处理方法
公开(公告)号：US08992724B2
公开(公告)日：2015-03-31
申请号：US13749784
申请日：2013-01-25
申请人： Hitachi High-Technologies Corporation
发明人： Shunsuke Kanazawa , Naoki Yasui , Michikazu Morimoto , Yasuo Ohgoshi
IPC分类号： C23F1/00 , H01L21/3213 , H01J37/32
CPC分类号： H01J37/32311 , C23F4/00 , H01J37/32146 , H01J37/32155 , H01J37/32165 , H01J37/32302 , H01L21/32137
摘要： A plasma processing apparatus includes a processing chamber which plasma-processes a sample, a first high-frequency power supply which supplies first high-frequency power for plasma generation to the processing chamber, a second high-frequency power supply which supplies second high-frequency power to a sample stage on which the sample is placed and a pulse generation device which generate first pulses for time-modulating the first high-frequency power and second pulses for time-modulating the second high-frequency power. The pulse generation device includes a control device which controls the first and second pulses so that frequency of the first pulses is higher than frequency of the second pulses and the on-period of the second pulse is contained in the on-period of the first pulse.
摘要翻译：等离子体处理装置包括对样品进行等离子体处理的处理室，向处理室供给用于等离子体生成的第一高频电力的第一高频电源，提供第二高频电源的第二高频电源放置样品的样品级的功率和产生用于对第一高频功率进行时间调制的第一脉冲的脉冲产生装置和用于对第二高频功率进行时间调制的第二脉冲。脉冲发生装置包括控制装置，其控制第一和第二脉冲，使得第一脉冲的频率高于第二脉冲的频率，并且第二脉冲的导通周期包含在第一脉冲的导通周期中。

8. 发明授权

US10192718B2 Plasma processing apparatus and plasma processing method 有权
公开(公告)号：US10192718B2
公开(公告)日：2019-01-29
申请号：US15132701
申请日：2016-04-19
申请人： Hitachi High-Technologies Corporation
发明人： Michikazu Morimoto , Naoki Yasui , Yasuo Ohgoshi
IPC分类号： H01J37/32 , H01L21/3065 , H01L21/67
摘要： In a plasma processing apparatus including a first radio-frequency power supply which supplies first radio-frequency power for generating plasma in a vacuum chamber, a second radio-frequency power supply which supplies second radio-frequency power to a sample stage on which a sample is mounted, and a matching box for the second radio-frequency power supply, the matching box samples information for performing matching during a sampling effective period which is from a point of time after elapse of a prescribed time from a beginning of on-state of the time-modulated second radio-frequency power until an and of the on-state and maintains a matching state attained during the sampling effective period from after the end of the on-state until a next sampling effective period.

9. 发明授权

US10121640B2 Method and apparatus for plasma processing 有权
公开(公告)号：US10121640B2
公开(公告)日：2018-11-06
申请号：US14603187
申请日：2015-01-22
申请人： HITACHI HIGH-TECHNOLOGIES CORPORATION
发明人： Satoru Muto , Tetsuo Ono , Yasuo Ohgoshi , Hirofumi Eitoku
IPC分类号： C23C16/00 , C23F1/00 , H01L21/306 , H01J37/32 , H01L21/3065 , H01L21/67 , H01L21/311 , H01L21/3213 , H01L29/66
摘要： The present invention provides a plasma processing method that uses a plasma processing apparatus including a plasma processing chamber in which a sample is plasma processed, a first radio-frequency power supply that supplies a first radio-frequency power for generating plasma, and a second radio-frequency power supply that supplies a second radio-frequency power to a sample stage on which the sample is mounted, wherein the plasma processing method includes the steps of modulating the first radio-frequency power by a first pulse; and controlling a plasma dissociation state to create a desired dissociation state by gradually controlling a duty ratio of the first pulse as a plasma processing time elapses.

10. 发明申请

US20170025289A1 PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD 审中-公开
标题翻译：等离子体加工设备和等离子体处理方法
公开(公告)号：US20170025289A1
公开(公告)日：2017-01-26
申请号：US15284668
申请日：2016-10-04
申请人： HITACHI HIGH-TECHNOLOGIES CORPORATION
发明人： Michikazu Morimoto , Yasuo Ohgoshi , Yuuzou Oohirabaru , Tetsuo Ono
IPC分类号： H01L21/67 , H01J37/32 , H01L21/3065
CPC分类号： H01L21/67069 , H01J37/32082 , H01J37/32165 , H01J37/32192 , H01J37/32302 , H01J37/32706 , H01J37/32715 , H01J2237/334 , H01L21/3065 , H01L21/31116 , H01L21/32137
摘要： The present invention provides a plasma processing apparatus having a radio frequency power supply supplying time-modulated radio frequency power which is controllable widely with high precision, and a plasma processing method using the plasma processing apparatus. The plasma processing apparatus includes: a vacuum chamber; a first radio frequency power supply for generating plasma in the vacuum chamber; a sample holder disposed in the vacuum chamber, on which a sample is placed; and a second radio frequency power supply supplying radio frequency power to the sample holder, wherein at least one of the first radio frequency power supply and the second radio frequency power supply supplies time-modulated radio frequency power, one of parameters of controlling the time-modulation has two or more different control ranges, and one of the control ranges is a control range for a high-precision control.
摘要翻译：本发明提供了一种等离子体处理装置，其具有提供可以高精度地广泛控制的调频射频功率的射频电源和使用等离子体处理装置的等离子体处理方法。等离子体处理装置包括：真空室; 用于在真空室中产生等离子体的第一射频电源; 设置在真空室中的样品保持器，其上放置样品; 以及第二射频电源，向所述检体保持器供给射频电力，其中，所述第一射频电源和所述第二射频电源中的至少一个提供时间调制的射频电力，调制具有两个或多个不同的控制范围，并且控制范围之一是用于高精度控制的控制范围。

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