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1. 发明申请

US20150054034A1 HIGH ELECTRON MOBILITY TRANSISTOR 有权
标题翻译：高电子移动晶体管
公开(公告)号：US20150054034A1
公开(公告)日：2015-02-26
申请号：US14328241
申请日：2014-07-10
申请人： EPISTAR CORPORATION , HUGA OPTOTECH INC.
发明人： Hsien-Chin CHIU , Chien-Kai TUNG , Heng-Kuang LIN , Chih-Wei YANG , Hsiang-Chun WANG
IPC分类号： H01L29/778
CPC分类号： H01L29/7784 , H01L29/157 , H01L29/2003 , H01L29/205 , H01L29/41758 , H01L29/42316 , H01L29/7787
摘要： A high electron mobility transistor comprises a substrate, an epitaxial stack arranged above the substrate and having a first region and a second region surrounding the first region, a matrix electrode structure arranged in the first region, and a plurality of first bridges electrically connecting the plurality of second electrodes. The matrix electrode structure comprises a plurality of first electrodes arranged on the epitaxial stack and a plurality of second electrodes arranged on the epitaxial stack and adjacent to the plurality of first electrodes. One of the bridges is arranged between two of the second electrodes and crossed over one of the first electrodes.
摘要翻译：高电子迁移率晶体管包括衬底，布置在衬底上方的外延层，并且具有第一区域和围绕第一区域的第二区域，布置在第一区域中的矩阵电极结构以及电连接多个第一区域的多个第一桥的第二电极。矩阵电极结构包括布置在外延堆叠上的多个第一电极和布置在外延堆叠上并与多个第一电极相邻的多个第二电极。其中一个桥被布置在两个第二电极之间并跨过第一电极中的一个。

2. 发明申请

US20150048418A1 SEMICONDUCTOR POWER DEVICE 有权
标题翻译：半导体功率器件
公开(公告)号：US20150048418A1
公开(公告)日：2015-02-19
申请号：US14256733
申请日：2014-04-18
申请人： HUGA OPTOTECH INC. , EPISTAR CORPORATION
发明人： Heng-Kuang LIN , Yih-Ting KUO , Tsung-Cheng CHANG
IPC分类号： H01L29/778
CPC分类号： H01L29/778 , H01L29/1075 , H01L29/2003 , H01L29/66462 , H01L29/7787
摘要： A semiconductor power device, comprising: a substrate; a first semiconductor layer with a first lattice constant formed on the substrate, wherein the first semiconductor layer comprises a first group III element; a first grading layer formed on the first semiconductor layer and comprising a first portion; a second semiconductor layer with a second lattice constant formed on the first grading layer, wherein the second semiconductor layer comprises a second group III element; and a first interlayer formed in the first grading layer and adjacent to the first portion of the first grading layer, wherein a composition of the first interlayer is different from that of the first portion, and the first grading layer comprises the first group III element and the second group III element, and concentrations of both the first group III element and the second group III element in the first grading layer are gradually changed.
摘要翻译：一种半导体功率器件，包括：衬底; 在所述基板上形成具有第一晶格常数的第一半导体层，其中所述第一半导体层包括第一III族元素; 形成在所述第一半导体层上并包括第一部分的第一分级层; 形成在所述第一分级层上的具有第二晶格常数的第二半导体层，其中所述第二半导体层包括第二组III元素; 以及形成在第一分级层中并与第一分级层的第一部分相邻的第一中间层，其中第一中间层的组成与第一层的组成不同，第一分级层包含第一III族元素和第二组III元素和第一分级层中的第一组III元素和第二组III元素的浓度逐渐变化。

3. 发明申请

US20150340484A1 POWER DEVICE 审中-公开
标题翻译：电源设备
公开(公告)号：US20150340484A1
公开(公告)日：2015-11-26
申请号：US14715750
申请日：2015-05-19
申请人： EPISTAR CORPORATION , HUGA OPTOTECH INC
发明人： Ya-Yu YANG , Heng-Kuang LIN
IPC分类号： H01L29/778 , H01L29/267 , H01L29/423 , H01L29/06
CPC分类号： H01L29/7787 , H01L29/0619 , H01L29/0676 , H01L29/2003 , H01L29/267
摘要： This disclosure discloses a power device. The power device comprises a substrate; a first semiconductor layer having a first band gap and disposed on the substrate; a second semiconductor layer having a second band gap being lager than the first band gap and disposed on the first semiconductor layer; a third semiconductor layer having a third band gap smaller than the second band gap layer and disposed on the second semiconductor layer; a source electrode disposed on the third semiconductor layer; a base electrode electrically connecting the source electrode; and a p-type metal-oxide layer disposed between the base electrode and the third semiconductor layer.
摘要翻译：本公开公开了一种功率器件。功率器件包括衬底; 具有第一带隙并设置在所述基板上的第一半导体层; 第二半导体层，其具有比所述第一带隙大的第二带隙，并且设置在所述第一半导体层上; 第三半导体层，具有比所述第二带隙层小的第三带隙，并且设置在所述第二半导体层上; 设置在所述第三半导体层上的源电极; 电极连接所述源电极的基极; 以及设置在所述基极和所述第三半导体层之间的p型金属氧化物层。

4. 发明申请

US20150137179A1 POWER DEVICE 审中-公开
标题翻译：电源设备
公开(公告)号：US20150137179A1
公开(公告)日：2015-05-21
申请号：US14084084
申请日：2013-11-19
申请人： HUGA OPTOTECH INC. , EPISTAR CORPORATION
发明人： Ya-Yu YANG , Heng-Kuang LIN
IPC分类号： H01L29/205 , H01L29/778 , H01L29/20
CPC分类号： H01L29/2003 , H01L29/1075 , H01L29/154 , H01L29/66462 , H01L29/7787
摘要： A power device disclosed herein comprises a substrate, a first semiconductor layer formed on the substrate, a second semiconductor layer formed on the first semiconductor layer and comprising a first element of group III, a third semiconductor layer formed on the second semiconductor layer and a plurality of first interlayers formed in the third semiconductor layer and comprising a second element of III group. The first element of III group and the second element of III group are the same. The second semiconductor layer and the plurality of first interlayers are doped with carbon.
摘要翻译：本文公开的功率器件包括衬底，形成在衬底上的第一半导体层，形成在第一半导体层上的第二半导体层，并且包括第三组的第一元件，形成在第二半导体层上的第三半导体层和多个的第一中间层形成在第三半导体层中并且包括III族的第二元素。 III组的第一个元素和III组的第二个元素是相同的。第二半导体层和多个第一中间层掺杂有碳。

5. 发明申请

US20160233326A1 HIGH ELECTRON MOBILITY TRANSISTOR 有权
标题翻译：高电子移动晶体管
公开(公告)号：US20160233326A1
公开(公告)日：2016-08-11
申请号：US15133207
申请日：2016-04-19
申请人： EPISTAR CORPORATION , HUGA OPTOTECH Inc.
发明人： Hsein-chin CHIU , Chien-Kai TUNG , Heng-Kuang LIN , Chih-Wei YANG , Hsiang-Chun WANG
IPC分类号： H01L29/778 , H01L29/417 , H01L29/15 , H01L29/20 , H01L29/205
CPC分类号： H01L29/7784 , H01L29/157 , H01L29/2003 , H01L29/205 , H01L29/41758 , H01L29/42316 , H01L29/7787
摘要： A high electron mobility transistor comprises a substrate, an epitaxial stack arranged above the substrate and having a first region and a second region surrounding the first region, a matrix electrode structure arranged in the first region. The matrix electrode comprises a plurality of first electrodes arranged on the epitaxial stack, a plurality of second electrodes arranged on the epitaxial stack and adjacent to the plurality of first electrodes, a plurality of third electrodes arranged adjacent to the plurality of first electrodes and second electrodes. One of the plurality of first electrodes comprises a first side, a second side, a third side and a fourth side. The first side and the third side are opposite sides, and the second side and the fourth side are opposite sides. Two of the plurality of second electrodes are arranged on the first side and the third side, and two of the plurality of third electrodes are arranged on the second side and the fourth side.
摘要翻译：高电子迁移率晶体管包括衬底，布置在衬底上方并且具有围绕第一区域的第一区域和第二区域的外延层，布置在第一区域中的矩阵电极结构。矩阵电极包括布置在外延堆叠上的多个第一电极，布置在外延堆叠上并与多个第一电极相邻的多个第二电极，与多个第一电极和第二电极相邻布置的多个第三电极。多个第一电极中的一个包括第一侧，第二侧，第三侧和第四侧。第一侧和第三侧是相对侧，第二侧和第四侧是相对的两侧。多个第二电极中的两个布置在第一侧和第三侧上，并且多个第三电极中的两个布置在第二侧和第四侧上。

6. 发明申请

US20160093699A1 SEMICONDUCTOR DEVICE AND THE METHOD OF MANUFACTURING THE SAME 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20160093699A1
公开(公告)日：2016-03-31
申请号：US14498104
申请日：2014-09-26
申请人： Epistar Corporation , HUGA OPTOTECH INC.
发明人： Heng-Kuang LIN , Ya-Yu YANG
IPC分类号： H01L29/205 , H01L33/12 , H01L33/32 , H01L29/20 , H01L29/78
CPC分类号： H01L33/12 , H01L21/02381 , H01L21/02458 , H01L21/02505 , H01L21/0254 , H01L21/26506 , H01L29/2003 , H01L29/812 , H01L33/32
摘要： The present application discloses a semiconductor device comprising a crystalline substrate having a first region and a second region, a nuclei structure on the first region, a first crystalline buffer layer on the nuclei structure, a void between the second region and the first crystalline buffer layer, a second crystalline buffer layer on the first crystalline buffer layer, an intermediate layer located between the first crystalline buffer layer and the second crystalline buffer layer, and a semiconductor device layer on the second crystalline buffer layer.
摘要翻译：本申请公开了一种半导体器件，其包括具有第一区域和第二区域的晶体衬底，第一区域上的核结构，核结构上的第一晶体缓冲层，第二区域和第一晶体缓冲层之间的空隙第一晶体缓冲层上的第二晶体缓冲层，位于第一晶体缓冲层和第二晶体缓冲层之间的中间层，以及在第二晶体缓冲层上的半导体器件层。

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