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1. 发明授权

US08355285B2 Method and system for adaptively finding reference voltages for reading data from a MLC flash memory 有权
标题翻译：用于自适应地寻找用于从MLC闪速存储器读取数据的参考电压的方法和系统
公开(公告)号：US08355285B2
公开(公告)日：2013-01-15
申请号：US12915573
申请日：2010-10-29
申请人： Chien-Fu Huang , Ming-Hung Chou , Han-Lung Huang , Shih-Keng Cho
发明人： Chien-Fu Huang , Ming-Hung Chou , Han-Lung Huang , Shih-Keng Cho
IPC分类号： G11C16/04
CPC分类号： G11C11/5642 , G11C2211/5621 , G11C2211/5634
摘要： A method and system for adaptively finding reference voltages for reading data from a multi-level cell (MLC) flash memory is disclosed. According to one embodiment, a first total number of cells of the flash memory above a first threshold voltage in a shifted threshold voltage distribution is provided. Search to find a second threshold voltage such that a second total number of the cells above the second threshold voltage is approximate to the first total number. An initial reference voltage or voltages of the initial threshold voltage distribution are shifted with an amount approximate to a voltage difference between the second threshold voltage and the first threshold voltage, thereby resulting in a new reference voltage or voltages for reading the data from the MLC flash memory.
摘要翻译：公开了一种用于自适应地寻找用于从多电平单元（MLC）闪速存储器读取数据的参考电压的方法和系统。根据一个实施例，提供闪烁存储器中的移位阈值电压分布中高于第一阈值电压的第一总数的单元。搜索以找到第二阈值电压，使得高于第二阈值电压的第二个单元的总数接近于第一总数。初始参考电压或初始阈值电压分布的电压以接近于第二阈值电压和第一阈值电压之间的电压差的量移动，由此导致用于从MLC闪存读取数据的新参考电压或电压记忆。

2. 发明授权

US07848152B1 Method and system for adaptively finding reference voltages for reading data from a MLC flash memory 有权
标题翻译：用于自适应地寻找用于从MLC闪速存储器读取数据的参考电压的方法和系统
公开(公告)号：US07848152B1
公开(公告)日：2010-12-07
申请号：US12464240
申请日：2009-05-12
申请人： Chien-Fu Huang , Ming-Hung Chou , Han-Lung Huang , Shih-Keng Cho
发明人： Chien-Fu Huang , Ming-Hung Chou , Han-Lung Huang , Shih-Keng Cho
IPC分类号： G11C16/04
CPC分类号： G11C11/5642 , G11C2211/5621 , G11C2211/5634
摘要： A method and system for adaptively finding reference voltages for reading data from a multi-level cell (MLC) flash memory is disclosed. According to one embodiment, information about an initial threshold voltage distribution is firstly provided. A first threshold voltage in the initial threshold voltage distribution is then associated with a second threshold voltage in a shifted threshold voltage distribution to be determined, such that the information corresponding to the first threshold voltage is approximate to the information corresponding to the second threshold voltage. Accordingly, initial reference voltage or voltages of the initial threshold voltage distribution are shifted with an amount approximate to difference between the first threshold voltage and the second threshold voltage, thereby resulting in new reference voltage or voltages for reading the data from the MLC flash memory.
摘要翻译：公开了一种用于自适应地寻找用于从多电平单元（MLC）闪速存储器读取数据的参考电压的方法和系统。根据一个实施例，首先提供关于初始阈值电压分布的信息。初始阈值电压分布中的第一阈值电压然后与移位的阈值电压分布中的第二阈值电压相关联，以使得与第一阈值电压对应的信息接近于与第二阈值电压对应的信息。因此，初始阈值电压分布的初始参考电压或电压以接近于第一阈值电压和第二阈值电压之间的差值的量移动，由此导致用于从MLC闪速存储器读取数据的新参考电压或电压。

3. 发明授权

US08074013B2 Uniform coding system for a flash memory 有权
标题翻译：闪存统一编码系统
公开(公告)号：US08074013B2
公开(公告)日：2011-12-06
申请号：US12563915
申请日：2009-09-21
申请人： Han-Lung Huang , Chien-Fu Huang , Ming-Hung Chou , Shih-Keng Cho
发明人： Han-Lung Huang , Chien-Fu Huang , Ming-Hung Chou , Shih-Keng Cho
IPC分类号： G06F13/00
CPC分类号： G11C16/10 , G11C7/1006 , G11C11/5628 , G11C2211/5647
摘要： A uniform coding system for a flash memory is disclosed. A statistic decision unit determines a coding word according to a plurality of inputs. An inverse unit controllably inverts input data to be encoded. The input data are then encoded into encoded data according to a statistic determined by the statistic decision unit.
摘要翻译：公开了一种用于闪速存储器的均匀编码系统。统计判定单元根据多个输入确定编码字。逆单元可控地反转要编码的输入数据。然后根据由统计判定单元确定的统计量将输入数据编码为编码数据。

4. 发明申请

US20100290282A1 METHOD AND SYSTEM FOR ADAPTIVELY FINDING REFERENCE VOLTAGES FOR READING DATA FROM A MLC FLASH MEMORY 有权
标题翻译：用于自适应地找到用于从MLC闪存存储器读取数据的参考电压的方法和系统
公开(公告)号：US20100290282A1
公开(公告)日：2010-11-18
申请号：US12464240
申请日：2009-05-12
申请人： Chien-Fu Huang , Ming-Hung Chou , Han-Lung Huang , Shih-Keng Cho
发明人： Chien-Fu Huang , Ming-Hung Chou , Han-Lung Huang , Shih-Keng Cho
IPC分类号： G11C16/04 , G11C16/06
CPC分类号： G11C11/5642 , G11C2211/5621 , G11C2211/5634
摘要： A method and system for adaptively finding reference voltages for reading data from a multi-level cell (MLC) flash memory is disclosed. According to one embodiment, information about an initial threshold voltage distribution is firstly provided. A first threshold voltage in the initial threshold voltage distribution is then associated with a second threshold voltage in a shifted threshold voltage distribution to be determined, such that the information corresponding to the first threshold voltage is approximate to the information corresponding to the second threshold voltage. Accordingly, initial reference voltage or voltages of the initial threshold voltage distribution are shifted with an amount approximate to difference between the first threshold voltage and the second threshold voltage, thereby resulting in new reference voltage or voltages for reading the data from the MLC flash memory.
摘要翻译：公开了一种用于自适应地寻找用于从多电平单元（MLC）闪速存储器读取数据的参考电压的方法和系统。根据一个实施例，首先提供关于初始阈值电压分布的信息。初始阈值电压分布中的第一阈值电压然后与移位的阈值电压分布中的第二阈值电压相关联，以使得与第一阈值电压对应的信息接近于与第二阈值电压对应的信息。因此，初始阈值电压分布的初始参考电压或电压以接近于第一阈值电压和第二阈值电压之间的差值的量移动，由此导致用于从MLC闪速存储器读取数据的新参考电压或电压。

5. 发明申请

US20110072191A1 Uniform Coding System for a Flash Memory 有权
标题翻译：闪存统一编码系统
公开(公告)号：US20110072191A1
公开(公告)日：2011-03-24
申请号：US12563915
申请日：2009-09-21
申请人： Han-Lung Huang , Chien-Fu Huang , Ming-Hung Chou , Shih-Keng Cho
发明人： Han-Lung Huang , Chien-Fu Huang , Ming-Hung Chou , Shih-Keng Cho
IPC分类号： G06F12/00 , G06F12/02 , G11C11/34
CPC分类号： G11C16/10 , G11C7/1006 , G11C11/5628 , G11C2211/5647
摘要： A uniform coding system for a flash memory is disclosed. A statistic decision unit determines a coding word according to a plurality of inputs. An inverse unit controllably inverts input data to be encoded. The input data are then encoded into encoded data according to a statistic determined by the statistic decision unit.
摘要翻译：公开了一种用于闪速存储器的均匀编码系统。统计判定单元根据多个输入确定编码字。逆单元可控地反转要编码的输入数据。然后根据由统计判定单元确定的统计量将输入数据编码为编码数据。

6. 发明申请

US20110038209A1 Method and System for Adaptively Finding Reference Voltages for Reading Data from a MLC Flash Memory 有权
标题翻译：用于自适应地查找从MLC闪存读取数据的参考电压的方法和系统
公开(公告)号：US20110038209A1
公开(公告)日：2011-02-17
申请号：US12915573
申请日：2010-10-29
申请人： Chien-Fu Huang , Ming-Hung Chou , Han-Lung Huang , Shih-Keng Cho
发明人： Chien-Fu Huang , Ming-Hung Chou , Han-Lung Huang , Shih-Keng Cho
IPC分类号： G11C16/28
CPC分类号： G11C11/5642 , G11C2211/5621 , G11C2211/5634
摘要： A method and system for adaptively finding reference voltages for reading data from a multi-level cell (MLC) flash memory is disclosed. According to one embodiment, a first total number of cells of the flash memory above a first threshold voltage in a shifted threshold voltage distribution is provided. Search to find a second threshold voltage such that a second total number of the cells above the second threshold voltage is approximate to the first total number. An initial reference voltage or voltages of the initial threshold voltage distribution are shifted with an amount approximate to a voltage difference between the second threshold voltage and the first threshold voltage, thereby resulting in a new reference voltage or voltages for reading the data from the MLC flash memory.
摘要翻译：公开了一种用于自适应地寻找用于从多电平单元（MLC）闪速存储器读取数据的参考电压的方法和系统。根据一个实施例，提供闪烁存储器中的移位阈值电压分布中高于第一阈值电压的第一总数的单元。搜索以找到第二阈值电压，使得高于第二阈值电压的第二个单元的总数接近于第一总数。初始参考电压或初始阈值电压分布的电压以接近于第二阈值电压和第一阈值电压之间的电压差的量移动，由此导致用于从MLC闪存读取数据的新参考电压或电压记忆。

7. 发明申请

US20100321997A1 Method And System For Obtaining A Reference Block For A MLC Flash Memory 有权
标题翻译：用于获取MLC闪存的参考块的方法和系统
公开(公告)号：US20100321997A1
公开(公告)日：2010-12-23
申请号：US12486691
申请日：2009-06-17
申请人： Chien-Fu Huang , Ming-Hung Chou , Han-Lung Huang , Shih-Keng Cho
发明人： Chien-Fu Huang , Ming-Hung Chou , Han-Lung Huang , Shih-Keng Cho
IPC分类号： G11C16/04 , G11C16/06
CPC分类号： G11C11/5628 , G11C11/5642 , G11C16/349 , G11C16/3495
摘要： A method and system for obtaining a reference block on which reference voltages may be found for a MLC flash memory are disclosed. A first block and a second block are provided in the flash memory. A memory controller alternatively controls one of the first and the second blocks to act as the reference block and the other one as a cycle block in a respective period, during which the reference block stays idle and the cycle block is subjected to program/erase cycles.
摘要翻译：公开了一种用于获得参考块的方法和系统，其中可以针对MLC闪速存储器找到参考电压。闪存中提供第一块和第二块。存储器控制器交替地控制第一和第二块中的一个作为参考块，而另一个作为周期块在相应的周期内，在此期间参考块保持空闲并且周期块经受编程/擦除周期。

8. 发明授权

US08503233B2 Method of twice programming a non-volatile flash memory with a sequence 有权
标题翻译：使用序列对非易失性闪存进行两次编程的方法
公开(公告)号：US08503233B2
公开(公告)日：2013-08-06
申请号：US12831612
申请日：2010-07-07
申请人： Han-Lung Huang , Ming-Hung Chou , Chien-Fu Huang , Shih-Keng Cho
发明人： Han-Lung Huang , Ming-Hung Chou , Chien-Fu Huang , Shih-Keng Cho
IPC分类号： G11C16/04
CPC分类号： G11C16/10 , G11C11/5628 , G11C16/26 , G11C16/3418
摘要： A method of twice programming a multi-bit per cell non-volatile memory with a sequence is disclosed. At least one page at a given word line is firstly programmed with program data by a controller of the non-volatile memory, and at least one page at a word line preceding the given word line is secondly programmed with the same program data by the controller.
摘要翻译：公开了一种使用一个序列对每个单元非易失性存储器进行两位多址编程的方法。给定字线上的至少一页首先由非易失性存储器的控制器用程序数据编程，并且给定字线之前的字线中的至少一个页面被控制器用相同的程序数据二次编程。

9. 发明授权

US08130544B2 Method of reducing bit error rate for a flash memory 有权
标题翻译：降低闪速存储器误码率的方法
公开(公告)号：US08130544B2
公开(公告)日：2012-03-06
申请号：US12542609
申请日：2009-08-17
申请人： Ming-Hung Chou , Chien-Fu Huang , Han-Lung Huang , Shih-Keng Cho
发明人： Ming-Hung Chou , Chien-Fu Huang , Han-Lung Huang , Shih-Keng Cho
IPC分类号： G11C11/34
CPC分类号： G11C11/5642 , G06F11/1048 , G11C16/26 , G11C16/3418
摘要： A method of reducing coupling effect in a flash memory is disclosed. A neighboring page is read, and a flag is set active if the neighboring page is an interfering page. Data are read from the neighboring page at least two more times using at least two distinct read voltages respectively. The threshold-voltage distributions associated with an original page and the neighboring page are transferred according to the read data and the flag.
摘要翻译：公开了一种降低闪存中耦合效应的方法。读取相邻页面，如果相邻页面是干扰页面，则标志被设置为活动的。使用至少两个不同的读取电压分别从相邻页面读取至少两次数据。根据读取的数据和标志传送与原始页面和相邻页面相关联的阈值电压分布。

10. 发明申请

US20110044101A1 METHOD AND SYSTEM OF FINDING A READ VOLTAGE FOR A FLASH MEMORY 有权
标题翻译：发现闪存的读取电压的方法和系统
公开(公告)号：US20110044101A1
公开(公告)日：2011-02-24
申请号：US12543496
申请日：2009-08-18
申请人： Ming-Hung Chou , Chien-Fu Huang , Han-Lung Huang , Shih-Keng Cho
发明人： Ming-Hung Chou , Chien-Fu Huang , Han-Lung Huang , Shih-Keng Cho
IPC分类号： G11C16/04 , G11C16/06 , G11C7/10
CPC分类号： G11C16/34 , G11C7/1006 , G11C11/5642
摘要： A method and system of finding a read voltage for a flash memory is disclosed. Data are read from array cells of the flash memory with a default read voltage, and a recorded state bit number that is recorded during programming is also read. Determine an optimal read voltage if the readout data do not pass the error correction control (ECC). Data are then re-read from the array cells of the flash memory with the determined optimal read voltage.
摘要翻译：公开了一种找到闪存读取电压的方法和系统。数据从闪速存储器的阵列单元读取，具有默认读取电压，并且还读取在编程期间记录的记录状态位数。如果读出数据未通过纠错控制（ECC），则确定最佳读取电压。然后用确定的最佳读取电压从闪速存储器的阵列单元重新读取数据。

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