专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US09025632B2 Quantum cascade laser element 有权
标题翻译：量子级联激光元件
公开(公告)号：US09025632B2
公开(公告)日：2015-05-05
申请号：US14236458
申请日：2012-08-01
申请人： Hideki Hirayama , Tsung-Tse Lin
发明人： Hideki Hirayama , Tsung-Tse Lin
IPC分类号： H01S5/00 , H01S5/34 , B82Y20/00 , H01S5/02
CPC分类号： H01S5/3401 , B82Y20/00 , H01S5/0014 , H01S5/0035 , H01S5/0215 , H01S5/0217 , H01S5/3402 , H01S2302/02
摘要： [PROBLEM] To manufacture a quantum cascade laser (QCL) element having a reduced threshold current density (Jth) and an increased maximum operating temperature (Tmax).[SOLUTION] One embodiment of the present invention provides a THz-QCL element (1000) with a QCL structure (100), which is a semiconductor superlattice (100A) sandwiched between a pair of electrodes (20, 30). The semiconductor superlattice (100A) (QCL structure (100)) is provided with an active region (10) that emits THz range electromagnetic waves due to the transition of electrons between sub-bands during application of a voltage to the pair of electrodes, for example. The active region (10) has repeating unit structures (10U) of a thickness, which includes sets of a well layer (10W) and a barrier layer (10B) alternatingly laminated with each other, wherein the well layer (10W) is made of AlxGa1-xAs (where 0
摘要翻译： [问题]制造具有降低的阈值电流密度（Jth）和增加的最大工作温度（Tmax）的量子级联激光器（QCL）元件。 [解决方案]本发明的一个实施例提供了一种具有QCL结构（100）的THz-QCL元件（1000），其是夹在一对电极（20,30）之间的半导体超晶格（100A）。半导体超晶格（100A）（QCL结构（100））具有有源区域（10），该有源区域（10）由于在向一对电极施加电压期间的子带之间的电子跃迁而发射THz范围的电磁波，例。有源区（10）具有厚度重复单元结构（10U），其包括彼此交替层压的阱层（10W）和势垒层（10B）的集合，其中阱层（10W）由 Al x Ga 1-x As（其中0

2. 发明申请

US20140153603A1 QUANTUM CASCADE LASER ELEMENT 有权
标题翻译：量子CASCADE激光元件
公开(公告)号：US20140153603A1
公开(公告)日：2014-06-05
申请号：US14236458
申请日：2012-08-01
申请人： Hideki Hirayama , Tsung-Tse Lin
发明人： Hideki Hirayama , Tsung-Tse Lin
IPC分类号： H01S5/34
CPC分类号： H01S5/3401 , B82Y20/00 , H01S5/0014 , H01S5/0035 , H01S5/0215 , H01S5/0217 , H01S5/3402 , H01S2302/02
摘要： [PROBLEM] To manufacture a quantum cascade laser (QCL) element having a reduced threshold current density (Jth) and an increased maximum operating temperature (Tmax).[SOLUTION] One embodiment of the present invention provides a THz-QCL element (1000) with a QCL structure (100), which is a semiconductor superlattice (100A) sandwiched between a pair of electrodes (20, 30). The semiconductor superlattice (100A) (QCL structure (100)) is provided with an active region (10) that emits THz range electromagnetic waves due to the transition of electrons between sub-bands during application of a voltage to the pair of electrodes, for example. The active region (10) has repeating unit structures (10U) of a thickness, which includes sets of a well layer (10W) and a barrier layer (10B) alternatingly laminated with each other, wherein the well layer (10W) is made of AlxGa1-xAs (where 0
摘要翻译： [问题]制造具有降低的阈值电流密度（Jth）和增加的最大工作温度（Tmax）的量子级联激光器（QCL）元件。 [解决方案]本发明的一个实施例提供了一种具有QCL结构（100）的THz-QCL元件（1000），其是夹在一对电极（20,30）之间的半导体超晶格（100A）。半导体超晶格（100A）（QCL结构（100））具有有源区域（10），该有源区域（10）由于在向一对电极施加电压期间的子带之间的电子跃迁而发射THz范围的电磁波，例。有源区（10）具有厚度重复单元结构（10U），其包括彼此交替层压的阱层（10W）和势垒层（10B）的集合，其中阱层（10W）由 Al x Ga 1-x As（其中0

3. 发明授权

US08659669B2 Image stabilization circuit with high pass filter 有权
标题翻译：具有高通滤波器的图像稳定电路
公开(公告)号：US08659669B2
公开(公告)日：2014-02-25
申请号：US12764412
申请日：2010-04-21
申请人： Hideki Hirayama , Naoto Iwata
发明人： Hideki Hirayama , Naoto Iwata
IPC分类号： H04N5/228
CPC分类号： H04N5/23248 , G03B2217/005
摘要： A first high-pass filter comprising a low-pass filter which allows only a frequency component of an input signal less than or equal to a first frequency to pass, a latch unit which latches an output of a low-pass filter according to a control signal, and a calculating unit which outputs a difference between an input signal and an output of the latch unit are provided on an image stabilization circuit. When latching in the latch unit is released, a held value of the latch unit is stepwise changed to the output value of the low-pass filter. Such a first high-pass filter is used in a centering process of an optical element.
摘要翻译：第一高通滤波器，包括低通滤波器，其仅允许小于或等于第一频率的输入信号的频率分量通过;锁存单元，其根据控制来锁存低通滤波器的输出信号，以及输出输入信号和锁存单元的输出之间的差的计算单元设置在图像稳定电路上。当闩锁单元中的锁存被释放时，锁存单元的保持值逐步改变为低通滤波器的输出值。这种第一高通滤波器用于光学元件的定心过程。

4. 发明授权

US08445938B2 Nitride semi-conductive light emitting device 有权
标题翻译：氮化物半导体发光器件
公开(公告)号：US08445938B2
公开(公告)日：2013-05-21
申请号：US12933927
申请日：2009-03-23
申请人： Takayoshi Takano , Kenji Tsubaki , Hideki Hirayama , Sachie Fujikawa
发明人： Takayoshi Takano , Kenji Tsubaki , Hideki Hirayama , Sachie Fujikawa
IPC分类号： H01L33/00
CPC分类号： H01L33/12 , H01L33/02 , H01L33/025 , H01L33/32
摘要： The nitride semi-conductive light emitting layer in this invention comprises a single crystal substrate 1 for epitaxial growth, a first buffer layer 2, an n-type nitride semi-conductive layer 3, a second buffer layer 4, a third buffer layer 5, a light emitting layer 6, and a p-type nitride semi-conductive layer 7. The first buffer layer 2 is laminated to a top side of the single crystal substrate 1. The n-type nitride semi-conductive layer 3 is laminated to a top side of the first buffer layer 2. The third buffer layer 5 is laminated to a top side of the n-type nitride semi-conductive layer 3 with the second buffer layer 4 being interposed therebetween. The light emitting layer 6 is laminated to a top side of the third buffer layer 5. The p-type nitride semi-conductive layer 7 is laminated to a top side of the light emitting layer 6. The third buffer layer 5 serves as a planarized base for growth of the light emitting layer 6 so as to reduce a threading dislocation and a residual distortion in the light emitting layer 6. This nitride semi-conductive light emitting device reduces a piezoelectric field in the light emitting layer by exploiting carriers generated in the third buffer layer 5. The third buffer layer 5 is doped with an Si impurity serving as a donor.
摘要翻译：本发明的氮化物半导体发光层包括用于外延生长的单晶衬底1，第一缓冲层2，n型氮化物半导体层3，第二缓冲层4，第三缓冲层5，发光层6和p型氮化物半导体层7.第一缓冲层2层压到单晶衬底1的顶侧。将n型氮化物半导体层3层压到第一缓冲层2的顶面。第三缓冲层5层叠在n型氮化物半导体层3的顶侧，第二缓冲层4插入其间。发光层6层压到第三缓冲层5的顶侧.p型氮化物半导体层7层压到发光层6的顶侧。第三缓冲层5用作平坦化从而减少发光层6中的穿透位错和残留变形。该氮化物半导体发光器件通过利用在该发光层6中生成的载流子来减少发光层中的压电场。第三缓冲层5掺杂有作为供体的Si杂质。

5. 发明授权

US08390023B2 Sapphire substrate, nitride semiconductor luminescent element using the sapphire substrate, and method for manufacturing the nitride semiconductor luminescent element 有权
标题翻译：蓝宝石衬底，使用蓝宝石衬底的氮化物半导体发光元件，以及氮化物半导体发光元件的制造方法
公开(公告)号：US08390023B2
公开(公告)日：2013-03-05
申请号：US12446081
申请日：2007-10-19
申请人： Robert David Armitage , Yukihiro Kondo , Hideki Hirayama
发明人： Robert David Armitage , Yukihiro Kondo , Hideki Hirayama
IPC分类号： H01L33/00
CPC分类号： H01L21/02661 , C30B25/02 , C30B25/18 , C30B29/403 , C30B29/406 , H01L21/0242 , H01L21/0243 , H01L21/02433 , H01L21/02458 , H01L21/0254 , H01L21/02609 , H01L33/007 , H01L33/16
摘要： The present invention provides an inexpensive substrate which can realize m-plane growth of a crystal by vapor phase growth. In a sapphire substrate, an off-angle plane slanted from an m-plane by a predetermined very small angle is prepared as a growth surface, which is a template of the crystal, at the time of growing a crystal of GaN or the like, by a polishing process to prepare a stepwise substrate comprising steps and terraces. According to the above-described configuration, even if an inexpensive sapphire substrate, which normally does not form an m-plane (nonpolar plane) GaN film, is used as a substrate for crystal growth, the following advantages can be attained. Specifically, c-axis growth can be carried out from the plane of each step as an a-plane on the terrace by vapor phase growth, which is advantageous in the fabrication of a device, in order to grow an excellent GaN single crystal which has been epitaxially grown so that the m-plane is opposite to the surplane of the terrace, and, in the mean time, the steps become integrated (fused), whereby a device can be fabricated from a substrate of a GaN single crystal having no significant threading dislocation. Further, the use of the m-plane can advantageously eliminate the influence of piezo electric fields.
摘要翻译：本发明提供一种廉价的基板，其可以通过气相生长实现晶体的m面生长。在蓝宝石衬底中，在生长GaN等的晶体时，准备从m面倾斜预定非常小的角度的偏角平面作为晶体模板的生长表面，通过抛光工艺制备包括步骤和梯田的逐步底物。根据上述结构，即使使用通常不形成m面（非极性面）GaN膜的廉价蓝宝石基板作为晶体生长用基板，也可以获得以下的效果。具体地说，c轴生长可以通过气相生长在平台上作为a平面从每个步骤的平面进行，这在器件的制造中是有利的，以便生长优异的GaN单晶，其具有被外延生长，使得m平面与平台的平面相对，并且同时，步骤被整合（熔化），由此可以从不具有显着性的GaN单晶的衬底制造器件穿线错位此外，使用m面可以有利地消除压电场的影响。

6. 发明授权

US08278129B2 Manufacturing method of nitride semi-conductor layer, and a nitride semi-conductor light emitting device with its manufacturing method 有权
标题翻译：氮化物半导体层的制造方法及其制造方法的氮化物半导体发光元件
公开(公告)号：US08278129B2
公开(公告)日：2012-10-02
申请号：US12622085
申请日：2009-11-19
申请人： Takayoshi Takano , Kenji Tsubaki , Hideki Hirayama , Sachie Fujikawa
发明人： Takayoshi Takano , Kenji Tsubaki , Hideki Hirayama , Sachie Fujikawa
IPC分类号： H01L21/00
CPC分类号： H01L21/02458 , H01L21/0237 , H01L21/0242 , H01L21/02505 , H01L21/0254 , H01L21/02576 , H01L21/02579 , H01L21/0262 , H01L21/02661 , H01L33/007 , H01L33/32
摘要： In a process of fabricating a nitride nitride semi-conductor layer of AlaGabIn(1-a-b)N(0 0), the AlGaInN layer is grown at a growth rate less than 0.09 μm/h according to the metal organic vapor phase epitaxy (MOPVE) method. The AlGaInN layer fabricated by the process in the present invention exhibits a high quality with low defect, and increases internal quantum yield.
摘要翻译：在制备AlaGabIn（1-ab）N（0 0）的氮化氮半导体层的过程中，AlGaInN层以生长根据金属有机气相外延（MOPVE）方法，其速率小于0.09μm/ h。通过本发明的方法制造的AlGaInN层具有低缺陷的高质量，并且提高了内部量子产率。

7. 发明授权

US08212879B2 Image stabilization control circuit for imaging apparatus 有权
标题翻译：用于成像设备的图像稳定控制电路
公开(公告)号：US08212879B2
公开(公告)日：2012-07-03
申请号：US12335179
申请日：2008-12-15
申请人： Yasunori Nagata , Tomofumi Watanabe , Hideki Hirayama
发明人： Yasunori Nagata , Tomofumi Watanabe , Hideki Hirayama
IPC分类号： H04N5/228
CPC分类号： H04N5/23248 , G02B27/646 , H04N5/2254
摘要： An internal CPU, a vibration control equalizer for processing an output signal of a vibration detector for detecting vibration of an imaging apparatus and calculating a vibration signal for determining a driving amount for an optical component on the basis of vibration of the imaging apparatus, a position control equalizer for calculating a position signal for determining a driving amount for the optical component on the basis of position of the optical component, and a control switching section for switching between the internal CPU and an external control circuit for the imaging apparatus for control of the vibration control equalizer and the position control equalizer.
摘要翻译：内部CPU，振动控制均衡器，用于处理用于检测成像装置的振动的振动检测器的输出信号，并且基于成像装置的振动计算用于确定光学部件的驱动量的振动信号;位置控制均衡器，用于基于所述光学部件的位置计算用于确定所述光学部件的驱动量的位置信号;以及控制切换部，用于在所述内部CPU与所述摄像装置的外部控制电路之间进行切换，振动控制均衡器和位置控制均衡器。

8. 发明申请

US20100270583A1 MANUFACTURING METHOD OF NITRIDE SEMI-CONDUCTOR LAYER, AND A NITRIDE SEMI-CONDUCTOR LIGHT EMITTING DEVICE WITH ITS MANUFACTURING METHOD 有权
标题翻译：硝酸盐半导体层的制造方法及其制造方法的氮化物半导体发光装置
公开(公告)号：US20100270583A1
公开(公告)日：2010-10-28
申请号：US12622085
申请日：2009-11-19
申请人： Takayoshi Takano , Kenji Tsubaki , Hideki Hirayama , Sachie Fujikawa
发明人： Takayoshi Takano , Kenji Tsubaki , Hideki Hirayama , Sachie Fujikawa
IPC分类号： H01L33/00 , H01L21/04
CPC分类号： H01L21/02458 , H01L21/0237 , H01L21/0242 , H01L21/02505 , H01L21/0254 , H01L21/02576 , H01L21/02579 , H01L21/0262 , H01L21/02661 , H01L33/007 , H01L33/32
摘要： In a process of fabricating a nitride nitride semi-conductor layer of AlaGabIn(1-a-b)N (0 0), the AlGaInN layer is grown at a growth rate less than 0.09 μm/h according to the metal organic vapor phase epitaxy (MOPVE) method. The AlGaInN layer fabricated by the process in the present invention exhibits a high quality with low defect, and increases internal quantum yield.
摘要翻译：在制备AlaGabIn（1-ab）N（0 0）的氮化氮半导体层的过程中，AlGaInN层以生长根据金属有机气相外延（MOPVE）方法，其速率小于0.09μm/ h。通过本发明的方法制造的AlGaInN层具有低缺陷的高质量，并且提高了内部量子产率。

9. 发明申请

US20100270532A1 NITRIDE SEMI-CONDUCTOR LIGHT EMITTING DEVICE 有权
标题翻译：硝酸盐半导体发光装置
公开(公告)号：US20100270532A1
公开(公告)日：2010-10-28
申请号：US12621364
申请日：2009-11-18
申请人： Takayoshi Takano , Kenji Tsubaki , Hideki Hirayama , Sachie Fujikawa
发明人： Takayoshi Takano , Kenji Tsubaki , Hideki Hirayama , Sachie Fujikawa
IPC分类号： H01L33/00
CPC分类号： H01L33/32 , H01L33/06
摘要： A nitride semi-conductor light emitting device has a p-type nitride semi-conductor layer 7, an n-type nitride semi-conductor layer 3, and a light emission layer 6 which is interposed between the p-type nitride semi-conductor layer 7 and the n-type nitride semi-conductor layer 3. The light emission layer 6 has a quantum well structure with a barrier layer 6b and a well layer 6a. The barrier layer 6b is formed of AlaGabIn(1-a-b)N (0 0), and contains a first impurity at a concentration of A greater than zero. The well layer 6a is formed of AlcGadIn(1-c-d)N (0 0), and contains a second impurity at a concentration of B equal to or greater than zero. In the nitride semi-conductor light emitting device of the present invention, the concentration of A is larger than that of B, in order that the barrier layer 6b has a concentration of oxygen smaller than that in the well layer 6a.
摘要翻译：氮化物半导体发光器件具有p型氮化物半导体层7，n型氮化物半导体层3和发光层6，该发光层6介于p型氮化物半导体层 7和n型氮化物半导体层3.发光层6具有阻挡层6b和阱层6a的量子阱结构。阻挡层6b由AlaGabIn（1-a-b）N（0 0）形成，并且含有浓度为大于零的第一杂质。阱层6a由AlcGadIn（1-cd）N（0 0）形成，并且含有浓度为B的第二杂质等于或大于零。在本发明的氮化物半导体发光器件中，为了使阻挡层6b的氧浓度比阱层6a的浓度小，A的浓度大于B的浓度。

10. 发明授权

US07811847B2 Optical semiconductor device and method for manufacturing the same 有权
标题翻译：光半导体装置及其制造方法
公开(公告)号：US07811847B2
公开(公告)日：2010-10-12
申请号：US12055949
申请日：2008-03-26
申请人： Hideki Hirayama , Tomoaki Ohashi , Norihiko Kamata
发明人： Hideki Hirayama , Tomoaki Ohashi , Norihiko Kamata
IPC分类号： H01L21/00
CPC分类号： H01L33/007 , H01L21/0237 , H01L21/0242 , H01L21/02458 , H01L21/02505 , H01L21/0254 , H01L21/0262 , H01L33/12
摘要： Because of a large lattice mismatch between a sapphire substrate and a group III-V compound semiconductor, a good crystal is difficult to grow. A high-quality AlN buffer growth structure A on a sapphire substrate includes a sapphire (0001) substrate 1, an AlN nucleation layer 3 formed on the sapphire substrate 1, a pulsed supplied AlN layer 5 formed on the AlN nucleation layer 3, and a continuous growth AlN layer 7 formed on the pulsed supplied AlN layer 5. Formed on the continuous growth AlN layer 7 is at least one set of a pulsed supplied AlN layer 11 and a continuous growth AlN layer 15. The AlN layer 3 is grown in an initial nucleation mode which is a first growth mode by using an NH3 pulsed supply method. The pulsed supplied AlN layer 5 is formed by using NH3 pulsed supply in a low growth mode which is a second growth mode that increases a grain size and reduces dislocations and therefore is capable of reducing dislocations and burying the nucleation layer 3. The continuous growth AlN layer 7 is a fast vertical growth mode that improves flatness and suppresses crack occurrences. As examples of the thickness of layers; the pulsed supplied AlN layer 5, 11 is 0.3 μm and the thickness of the continuous growth AlN layer 7, 15 is 1 μm, for example. Characteristics of conditions under which layers are grown are as follows. The AlN layer 3 is grown under a high temperature and a high pressure with a low V-III ratio (less N). The pulsed supplied AlN layer 5 is grown at a low temperature and a low pressure with a high V-III ratio (more N). The continuous AlN layer 7 is grown at a high temperature and a high pressure with a high V-III ratio (Al rich and less N) without using an NH3 pulsed supply AlN growth method.
摘要翻译：由于蓝宝石衬底和III-V族化合物半导体之间的晶格失配很大，所以晶体难以生长。蓝宝石衬底上的高品质AlN缓冲生长结构A包括蓝宝石（0001）衬底1，形成在蓝宝石衬底1上的AlN成核层3，形成在AlN成核层3上的脉冲供应AlN层5和在脉冲供给的AlN层5上形成的连续生长AlN层7.在连续生长AlN层7上形成至少一组脉冲供给的AlN层11和连续生长AlN层15.将AlN层3生长在初始成核模式是通过使用NH 3脉冲供给方法的第一生长模式。脉冲供电的AlN层5是通过使用NH 3脉冲供给形成的，该低生长模式是增加晶粒尺寸并减少位错的第二生长模式，因此能够减少位错并掩埋成核层3.连续生长AlN 层7是快速的垂直生长模式，其提高平坦度并抑制裂纹发生。作为层的厚度的例子; 脉冲供给的AlN层5,11的厚度为0.3μm，连续生长AlN层7,15的厚度例如为1μm。生长层的条件的特征如下。 AlN层3在低V-III比（低N）的高温高压下生长。脉冲供给的AlN层5在V-III比高（N以下）的低温低压下生长。连续的AlN层7在不使用NH 3脉冲供给AlN生长方法的情况下，在高V-III比（Al浓度低于N）的高温高压下生长。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式