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1. 发明授权

US06825920B2 Method and system of determining chamber seasoning condition by optical emission 有权
标题翻译：通过光发射确定室调节条件的方法和系统
公开(公告)号：US06825920B2
公开(公告)日：2004-11-30
申请号：US10446939
申请日：2003-05-29
申请人： Hieu A. Lam , Hongyu Yue , John Shriner
发明人： Hieu A. Lam , Hongyu Yue , John Shriner
IPC分类号： G01N2100
CPC分类号： H01L21/67253 , A61K48/005 , C23C16/4404 , C23C16/52 , G01N33/574 , G01N2333/4706 , H01J37/32935 , H01L21/67069
摘要： A plasma processing system that comprises a process chamber, a plasma source, a light detection device and a controller. The controller is useful for determining a seasoning state of the plasma processing system. The present invention further provides a method of determining the seasoning state of a plasma processing system comprising the steps of forming a first plasma in the process chamber utilizing the plasma source; measuring a first signal related to light emitted from the first plasma using the light detection device and storing the first signal using the controller; forming a second plasma in the process chamber utilizing the plasma source; measuring a second signal related to light emitted from the second plasma using the light detection device and storing the second signal using the controller; and correlating a change between the first signal and the second signal with a seasoning state of the plasma processing system.
摘要翻译：一种等离子体处理系统，包括处理室，等离子体源，光检测装置和控制器。控制器可用于确定等离子体处理系统的调味状态。本发明还提供了一种确定等离子体处理系统的调味状态的方法，包括以下步骤：利用等离子体源在处理室中形成第一等离子体; 使用所述光检测装置测量与从所述第一等离子体发射的光有关的第一信号，并使用所述控制器存储所述第一信号; 在所述处理室中利用所述等离子体源形成第二等离子体; 使用所述光检测装置测量与从所述第二等离子体发射的光有关的第二信号，并使用所述控制器存储所述第二信号; 以及利用所述等离子体处理系统的调节状态将所述第一信号和所述第二信号之间的变化相关联。

2. 发明授权

US07844559B2 Method and system for predicting process performance using material processing tool and sensor data 有权
标题翻译：使用材料加工工具和传感器数据预测工艺性能的方法和系统
公开(公告)号：US07844559B2
公开(公告)日：2010-11-30
申请号：US12255698
申请日：2008-10-22
申请人： Hieu A. Lam , Hongyu Yue , John Shriner
发明人： Hieu A. Lam , Hongyu Yue , John Shriner
IPC分类号： G06F17/15 , G06F17/16 , H01L21/66
CPC分类号： H01L22/20 , G05B19/41875 , G05B23/0254 , G05B2219/31357 , G05B2219/32179 , G05B2219/32194 , G05B2219/45028 , G05B2219/45031 , H01J37/32935 , Y02P90/14 , Y02P90/22
摘要： A method for constructing a process performance prediction model for a material processing system, the method including the steps of: recording tool data for a plurality of observations during a process in a process tool, the tool data comprises a plurality of tool data parameters; recording process performance data for the plurality of observations during the process in the process tool, the process performance data comprises one or more process performance parameters; performing a partial least squares analysis using the tool data and the process performance data; and computing correlation data from the partial least squares analysis.
摘要翻译：一种用于构建材料处理系统的过程性能预测模型的方法，所述方法包括以下步骤：在处理工具中的处理期间记录多个观察值的工具数据，所述工具数据包括多个工具数据参数; 在所述过程工具中的过程期间记录所述多个观察值的过程性能数据，所述过程执行数据包括一个或多个过程性能参数; 使用工具数据和过程执行数据执行偏最小二乘法分析; 并从偏最小二乘法分析计算相关数据。

3. 发明授权

US07167766B2 Controlling a material processing tool and performance data 有权
标题翻译：控制材料加工工具和性能数据
公开(公告)号：US07167766B2
公开(公告)日：2007-01-23
申请号：US10512863
申请日：2003-06-27
申请人： Hieu A. Lam , Hongyu Yue
发明人： Hieu A. Lam , Hongyu Yue
IPC分类号： G06F19/00
CPC分类号： G05B19/41865 , G05B2219/31443 , G05B2219/32366 , G05B2219/45031 , Y02P90/20 , Y02P90/26
摘要： According to an embodiment of the present invention, a material processing systeme (1) including a process tool (10) and a process performance control system (100). The process performance control system (100) includes a process performance controller (55) coupled to the process tool (10), where the process performance controller (55) includes a process performance prediction model (110), a process recipe correction filter (120), a process controller (130), and process performance model correction algorithm (150). The process performance prediction model (110) is configured to receive tool data from a plurality of sensors coupled to process tool (10) and to predict process performance data. The process recipe correction filter (120) is coupled to the process performance prediction model (110) and configured to receive predicted process performance data and generate a process recipe correction for run-to-run process control. The process controller (130) is coupled to the process recipe correction filter (120) and is configured to update a process recipe according to the process recipe correction.
摘要翻译：根据本发明的实施例，一种包括处理工具（10）和过程执行控制系统（100）的材料处理系统（1）。过程性能控制系统（100）包括耦合到处理工具（10）的过程性能控制器（55），其中过程性能控制器（55）包括过程性能预测模型（110），过程配方校正过滤器（120）），过程控制器（130）和过程执行模型校正算法（150）。过程性能预测模型（110）被配置为从耦合到过程工具（10）的多个传感器接收工具数据并预测过程性能数据。过程配方校正滤波器（120）耦合到过程性能预测模型（110）并且被配置为接收预测的过程性能数据并且生成用于运行过程控制的过程配方校正。过程控制器（130）耦合到过程配方校正过滤器（120），并被配置为根据处理配方校正更新过程配方。

4. 发明授权

US07713760B2 Process system health index and method of using the same 有权
标题翻译：过程系统健康指标及使用方法
公开(公告)号：US07713760B2
公开(公告)日：2010-05-11
申请号：US10809437
申请日：2004-03-26
申请人： Hongyu Yue , Hieu A. Lam
发明人： Hongyu Yue , Hieu A. Lam
IPC分类号： H01L21/00
CPC分类号： H01J37/3299 , H01J37/32935 , H01L21/67253 , H01L22/20 , H01L2924/0002 , H01L2924/00
摘要： A method of monitoring a processing system for processing a substrate during the course of semiconductor manufacturing is described. The method comprises acquiring data from the processing system for a plurality of observations. It further comprises constructing a principal components analysis (PCA) model from the data, wherein a weighting factor is applied to at least one of the data variables in the acquired data. The PCA mode is utilized in conjunction with the acquisition of additional data, and at least one statistical quantity is determined for each additional observation. Upon setting a control limit for the processing system, the at least one statistical quantity is compared with the control limit for each additional observation. When, for example, the at least one statistical quantity exceeds the control limit, a fault for the processing system is detected.
摘要翻译：描述了在半导体制造过程中监视用于处理衬底的处理系统的方法。该方法包括从处理系统获取多个观察数据。其还包括从数据构建主成分分析（PCA）模型，其中对所获取的数据中的至少一个数据变量应用加权因子。 PCA模式与采集附加数据一起使用，并且每个附加观察确定至少一个统计量。在设置处理系统的控制限制时，将至少一个统计量与每个附加观察的控制限制进行比较。当例如至少一个统计量超过控制极限时，检测到处理系统的故障。

5. 发明申请

US20090311634A1 METHOD OF DOUBLE PATTERNING USING SACRIFICIAL STRUCTURE 审中-公开
标题翻译：使用真实结构的双重方式的方法
公开(公告)号：US20090311634A1
公开(公告)日：2009-12-17
申请号：US12137183
申请日：2008-06-11
申请人： Hongyu Yue , Hieu A. Lam , Reiji Niino
发明人： Hongyu Yue , Hieu A. Lam , Reiji Niino
IPC分类号： G03F7/004
CPC分类号： H01L21/0337 , H01L21/0338
摘要： A method of patterning a thin film on a substrate is described. The method includes forming a sacrificial structure over the thin film, and forming a photo-resist layer over the sacrificial structure. The sacrificial structure has anti-reflective properties, comprises silicon and is capable of withstanding the photo-resist layer removal process and the stress induced during the spacer layer deposition. Thereafter, an image pattern is formed in one or both of the sacrificial structure or the photo-resist layer. A spacer layer is then conformally deposited over the pattern. The spacer layer is etched back to remove horizontal portions while substantially leaving vertical portions. The remaining photo-resist and/or sacrificial structure that is not overlaid with the etched-back spacer layer is removed leaving spacers that are utilized to transfer another pattern to the thin film.
摘要翻译：描述了在衬底上图案化薄膜的方法。该方法包括在薄膜上形成牺牲结构，并在牺牲结构上形成光刻胶层。该牺牲结构具有抗反射特性，包括硅并且能够承受光刻胶层去除工艺和在间隔层沉积期间引起的应力。此后，在牺牲结构或光致抗蚀剂层中的一个或两个中形成图像图案。然后将间隔层共形地沉积在图案上。将间隔层回蚀刻以除去水平部分，同时基本上留下垂直部分。除去未与蚀刻后隔离层重叠的剩余的光刻胶和/或牺牲结构，留下用于将另一图案转印到薄膜上的间隔物。

6. 发明授权

US08048326B2 Method and apparatus for determining an etch property using an endpoint signal 有权
标题翻译：使用端点信号确定蚀刻性质的方法和装置
公开(公告)号：US08048326B2
公开(公告)日：2011-11-01
申请号：US10531469
申请日：2003-10-31
申请人： Hongyu Yue , Hieu A. Lam
发明人： Hongyu Yue , Hieu A. Lam
IPC分类号： C23F1/00 , G01L21/30
CPC分类号： H01J37/32935 , H01J37/32963
摘要： The present invention presents a plasma processing system for etching a layer on a substrate comprising a process chamber, a diagnostic system coupled to the process chamber and configured to measure at least one endpoint signal, and a controller coupled to the diagnostic system and configured to determine in-situ at least one of an etch rate and an etch rate uniformity of the etching from the endpoint signal. Furthermore, an in-situ method of determining an etch property for etching a layer on a substrate in a plasma processing system is presented comprising the steps: providing a thickness of the layer; etching the layer on the substrate; measuring at least one endpoint signal using a diagnostic system coupled to the plasma processing system, wherein the endpoint signal comprises an endpoint transition; and determining the etch rate from a ratio of the thickness to a difference between a time during the endpoint transition and a starting time of the etching.
摘要翻译：本发明提出了一种用于蚀刻衬底上的层的等离子体处理系统，包括处理室，耦合到处理室并被配置为测量至少一个端点信号的诊断系统，以及耦合到诊断系统的控制器，并且被配置为确定从端点信号原位蚀刻速率和蚀刻速度均匀性中的至少一个。此外，提出了确定用于蚀刻等离子体处理系统中的衬底上的层的蚀刻性质的原位方法，包括以下步骤：提供该层的厚度; 蚀刻衬底上的层; 使用耦合到所述等离子体处理系统的诊断系统来测量至少一个端点信号，其中所述端点信号包括端点转换; 以及从所述厚度与所述端点转变期间的时间与所述蚀刻的开始时间之间的差的比率确定所述蚀刻速率。

7. 发明授权

US07211196B2 Method and system of discriminating substrate type 有权
标题翻译：识别基板类型的方法和系统
公开(公告)号：US07211196B2
公开(公告)日：2007-05-01
申请号：US10809474
申请日：2004-03-26
申请人： Hieu A. Lam , Hongyu Yue
发明人： Hieu A. Lam , Hongyu Yue
IPC分类号： H01L21/66
CPC分类号： G01N21/68
摘要： A method and system for determining a substrate type during a seasoning process is presented. An optical signal is acquired from a process in a plasma processing system, and the optical signal is compared to a pre-determined threshold value. Depending upon the comparison, the substrate type is determined to be of a correct type, or an incorrect type.
摘要翻译：提出了一种在调味过程中确定底物类型的方法和系统。从等离子体处理系统中的处理获取光信号，将光信号与预定阈值进行比较。根据比较，基板类型被确定为正确的类型或不正确的类型。

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