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    • 6. 发明申请
    • PHOTODETECTOR, PHOTODETECTOR ARRAY AND DISPLAY DEVICE WITH PHOTODETECTION
    • 光电转换器,光电转换器阵列和具有光电转换功能的显示设备
    • US20110169794A1
    • 2011-07-14
    • US13051612
    • 2011-03-18
    • Yujiro HARAYuki KudoJiro Yoshida
    • Yujiro HARAYuki KudoJiro Yoshida
    • G09G5/00H01L31/113
    • H01L31/105H01L27/1446H01L31/02164
    • According to one embodiment, a photodetector includes a substrate, a first semiconductor region, a second semiconductor region, a third semiconductor region, an insulating film, a first electrode, a second electrode, and a shield film. The first semiconductor region is provided on a major surface of the substrate. The second semiconductor region and the third semiconductor region are provided in a substantially identical plane to the first semiconductor region. The second semiconductor region is contacted with the first semiconductor region and has an impurity concentration higher than the first semiconductor region. The third semiconductor region is contacted with the second semiconductor region. The shield film is provided on the insulating film and electrically connected to the first electrode. A periphery of the shield film is disposed to cover an interface between the second semiconductor region and the third semiconductor region in a planar view.
    • 根据一个实施例,光电检测器包括基板,第一半导体区域,第二半导体区域,第三半导体区域,绝缘膜,第一电极,第二电极和屏蔽膜。 第一半导体区域设置在基板的主表面上。 第二半导体区域和第三半导体区域设置在与第一半导体区域基本相同的平面中。 第二半导体区域与第一半导体区域接触并且具有高于第一半导体区域的杂质浓度。 第三半导体区域与第二半导体区域接触。 屏蔽膜设置在绝缘膜上并电连接到第一电极。 屏蔽膜的周边设置成在平面视图中覆盖第二半导体区域和第三半导体区域之间的界面。
    • 7. 发明授权
    • Polygon data generation method and image display apparatus using same
    • 多边形数据生成方法和使用其的图像显示装置
    • US06600485B1
    • 2003-07-29
    • US09508048
    • 2000-03-03
    • Jiro YoshidaShinichi FuruhashiToshihiro NakaneNaoki Nakamura
    • Jiro YoshidaShinichi FuruhashiToshihiro NakaneNaoki Nakamura
    • G06T1500
    • G06T17/30
    • A method for generating polygon data from NURBS (non-uniform rational B-spline) data representing a parametric surface and an image display apparatus using that method are disclosed. In the method for generating polygon data, NURBS object data are coordinate-converted to coordinates having the viewing point as the origin, in correspondence with the advance of a program. Furthermore, the level of detail wherewith the object is drawn on the display is determined, the number of divisions into polygons when converting NURBS object data to objects configured by polygons is found, according to the determined level of detail wherewith objects are drawn, and vertices of polygons converted to according to that number of divisions are computed. Furthermore, polygons for which all vertices among the computed vertices are off the display screen displayed on the display, and all polygons which are front/back-determined to be backward and which do not have a front-and-back display attribute are deleted, and the vertex attributes are computed for the vertices of the remaining polygons. Rendering processing is also performed on the remaining polygons.
    • 公开了一种用于从表示参数表面的NURBS(非均匀有理B样条)数据和使用该方法的图像显示装置产生多边形数据的方法。 在用于生成多边形数据的方法中,NURBS对象数据被以坐标转换为与视点相对应的坐标作为原点。 此外,确定了在显示器上绘制对象的细节级别,根据确定的绘制对象的细节水平和顶点,找到将NURBS对象数据转换为由多边形配置的对象时分割为多边形的数量 根据该分割数转换为多边形。 此外,计算出的顶点中的所有顶点离开显示在显示器上的显示屏幕的所有多边形以及前/后确定为向后并且没有前后显示属性的所有多边形都被删除, 并且为剩余多边形的顶点计算顶点属性。 还对剩余的多边形执行渲染处理。
    • 8. 发明授权
    • Heterojunction bipolar transistor having an emitter region with a band
gap greater than that of a base region
    • 异质结双极晶体管具有带隙大于基极区域的带隙的发射极区域
    • US4768074A
    • 1988-08-30
    • US110042
    • 1987-10-13
    • Jiro YoshidaMakoto Azuma
    • Jiro YoshidaMakoto Azuma
    • H01L29/737H01L29/72
    • H01L29/7371
    • A heterojunction bipolar transistor comprises a base region of a first conductivity type formed of a first kind of semiconductor material, an emitter region of a second conductivity type formed of a second kind of semiconductor material which has a band gap greater than that of the first kind of semiconductor material and a smaller electron affinity, a transition region formed between the base region and the emitter region, and a collector region formed adjacent to the base region. The transition region is formed of a plurality of semiconductor layers such that band gaps sequentially increase in a stepped fashion from the semiconductor layer adjacent to the base region toward the semiconductor layer adjacent to the emitter region. The transition region is formed of a semiconductor material having an intermediate composition between the composition of the first kind of semiconductor material and that of the second kind of semiconductor material.
    • 异质结双极晶体管包括由第一种类型的半导体材料形成的第一导电类型的基极区域,由第二种类型的半导体材料形成的具有比第一种类型的带隙大的带隙的第二导电类型的发射极区域 的半导体材料和更小的电子亲和力,形成在基极区域和发射极区域之间的过渡区域以及与基极区域相邻形成的集电极区域。 过渡区域由多个半导体层形成,使得带隙从邻近基极区域的半导体层朝着与发射极区域相邻的半导体层以阶梯形式顺序地增加。 过渡区域由在第一种半导体材料的组成与第二种半导体材料的组成之间具有中间组成的半导体材料形成。
    • 10. 发明授权
    • Superconducting device and method of manufacturing the same
    • 超导装置及其制造方法
    • US06719924B2
    • 2004-04-13
    • US09984563
    • 2001-10-30
    • Toshihiko NaganoJiro Yoshida
    • Toshihiko NaganoJiro Yoshida
    • H01L2100
    • H01L39/225H01L39/2496
    • There is provided a superconducting device including a substrate, a first superconductor layer supported by the substrate and containing Ln, AE, M and O, and a second superconductor layer containing a material represented by a formula of (Yb1−yLn′y)AE′2M′3Oz, the first and second superconductor layers forming a junction, and atomic planes each including M and O in the first superconductor layer and atomic planes each including M′ and O in the second superconductor layer being discontinuous to each other in a position of the junction, wherein each of Ln and Ln′ represents at least one metal of Y and lanthanoids, each of AE and AE′ represents at least one of alkaline earth metals, each of M and M′ represents a metal which contains 80 atomic % or more of Cu, y represents a value between 0 and 0.9, and z represents a value between 6.0 and 8.0.
    • 提供了一种超导装置,其包括基板,由基板支撑并包含Ln,AE,M和O的第一超导体层和包含由式(Yb1-yLn'y)AE'表示的材料的第二超导体层, 2M'3Oz,形成结的第一和第二超导体层和在第一超导体层中各自包括M和O的原子平面和在第二超导体层中各自包括M'和O的原子平面彼此不连续地位于 其中Ln和Ln'中的每一个表示Y和镧系元素的至少一种金属,AE和AE'中的每一个代表碱土金属中的至少一种,M和M'中的每一个代表含有80原子%或 更多的Cu,y表示0和0.9之间的值,z表示6.0和8.0之间的值。