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1. 发明申请

US20100311238A1 METHOD OF FORMING COPPER WIRING LAYER 审中-公开
标题翻译：形成铜线的方法
公开(公告)号：US20100311238A1
公开(公告)日：2010-12-09
申请号：US12859018
申请日：2010-08-18
申请人： Hiroki Nakamura , Masaki Kado , Shigeru Aomori
发明人： Hiroki Nakamura , Masaki Kado , Shigeru Aomori
IPC分类号： H01L21/768
CPC分类号： H01L21/76885 , H01L21/76843 , H01L21/76852 , H01L21/76855 , H01L21/76864 , H01L21/76874 , H01L21/76879 , H01L21/76888 , H01L27/124 , H01L27/1292 , H01L27/1296 , H01L29/458
摘要： A method of forming a copper wiring layer, which includes forming a pattern of copper seed layer on a substrate, and forming a copper wiring pattern on the pattern of copper seed layer by means of electroless plating. At least one component of semiconductor device selected from the group consisting of the gate electrode, the source electrode, the drain electrode, and a wiring connected with at least one of these electrodes is formed by a method comprising forming a pattern of copper seed layer, and forming a copper wiring pattern on the pattern of copper seed layer by means of electroless plating.
摘要翻译：一种形成铜布线层的方法，其包括在基板上形成铜籽晶层的图案，并通过无电镀在铜籽晶层的图案上形成铜布线图案。通过包括形成铜籽晶层的图案的方法，形成从由栅电极，源电极，漏电极和与这些电极中的至少一个连接的布线的组中选择的至少一个半导体器件的组件，并通过无电镀法在铜籽晶层的图案上形成铜布线图案。

2. 发明申请

US20070072417A1 METHOD FOR FORMING WIRING STRUCTURE, WIRING STRUCTURE, METHOD FOR FORMING SEMICONDUCTOR DEVICE, AND DISPLAY DEVICE 有权
标题翻译：形成接线结构的方法，接线结构，形成半导体器件的方法和显示器件
公开(公告)号：US20070072417A1
公开(公告)日：2007-03-29
申请号：US11531873
申请日：2006-09-14
申请人： Hiroki Nakamura , Masaki Kado , Shigeru Aomori
发明人： Hiroki Nakamura , Masaki Kado , Shigeru Aomori
IPC分类号： H01L21/44
CPC分类号： H01L21/76838 , H01L27/12 , H01L27/124 , H01L29/458 , H01L29/4908
摘要： A method for forming a wiring structure includes forming a metal layer on a substrate, and annealing the metal layer by irradiating the metal layer with light emitted from at least one flash tube, thereby growing crystalline grains of the metal layer.
摘要翻译：一种形成布线结构的方法包括：在基板上形成金属层，并且通过用从至少一个闪光管发射的光照射金属层来对金属层进行退火，从而生长金属层的晶粒。

3. 发明授权

US07790612B2 Increased grain size in metal wiring structures through flash tube irradiation 有权
标题翻译：通过闪光管照射，金属配线结构中的晶粒尺寸增加
公开(公告)号：US07790612B2
公开(公告)日：2010-09-07
申请号：US11531873
申请日：2006-09-14
申请人： Hiroki Nakamura , Masaki Kado , Shigeru Aomori
发明人： Hiroki Nakamura , Masaki Kado , Shigeru Aomori
IPC分类号： H01L21/4763 , H01L21/00
CPC分类号： H01L21/76838 , H01L27/12 , H01L27/124 , H01L29/458 , H01L29/4908
摘要： A method for forming a wiring structure includes forming a metal layer on a substrate, and annealing the metal layer by irradiating the metal layer with light emitted from at least one flash tube, thereby growing crystalline grains of the metal layer.
摘要翻译：一种形成布线结构的方法包括：在基板上形成金属层，并且通过用从至少一个闪光管发射的光照射金属层来对金属层进行退火，从而生长金属层的晶粒。

4. 发明申请

US20100301342A1 INCREASED GRAIN SIZE IN METAL WIRING STRUCTURES THROUGH FLASH TUBE IRRADIATION 审中-公开
标题翻译：通过闪络管辐射的金属接线结构中增加的晶粒尺寸
公开(公告)号：US20100301342A1
公开(公告)日：2010-12-02
申请号：US12851290
申请日：2010-08-05
申请人： Hiroki NAKAMURA , Masaki Kado , Shigeru Aomori
发明人： Hiroki NAKAMURA , Masaki Kado , Shigeru Aomori
IPC分类号： H01L23/52 , H01L27/12
CPC分类号： H01L21/76838 , H01L27/12 , H01L27/124 , H01L29/458 , H01L29/4908
摘要： A method for forming a wiring structure includes forming a metal layer on a substrate, and annealing the metal layer by irradiating the metal layer with light emitted from at least one flash tube, thereby growing crystalline grains of the metal layer.
摘要翻译：一种形成布线结构的方法包括：在基板上形成金属层，并且通过用从至少一个闪光管发射的光照射金属层来对金属层进行退火，从而生长金属层的晶粒。

5. 发明申请

US20060178007A1 Method of forming copper wiring layer 审中-公开
标题翻译：形成铜布线层的方法
公开(公告)号：US20060178007A1
公开(公告)日：2006-08-10
申请号：US11344014
申请日：2006-02-01
申请人： Hiroki Nakamura , Masaki Kado , Shigeru Aomori
发明人： Hiroki Nakamura , Masaki Kado , Shigeru Aomori
IPC分类号： H01L21/44
CPC分类号： H01L21/76885 , H01L21/76843 , H01L21/76852 , H01L21/76855 , H01L21/76864 , H01L21/76874 , H01L21/76879 , H01L21/76888 , H01L27/124 , H01L27/1292 , H01L27/1296 , H01L29/458
摘要： A method of forming a copper wiring layer, which includes forming a pattern of copper seed layer on a substrate, and forming a copper wiring pattern on the pattern of copper seed layer by means of electroless plating. At least one component of semiconductor device selected from the group consisting of the gate electrode, the source electrode, the drain electrode, and a wiring connected with at least one of these electrodes is formed by a method comprising forming a pattern of copper seed layer, and forming a copper wiring pattern on the pattern of copper seed layer by means of electroless plating.
摘要翻译：一种形成铜布线层的方法，其包括在基板上形成铜籽晶层的图案，并通过无电镀在铜籽晶层的图案上形成铜布线图案。通过包括形成铜籽晶层的图案的方法，形成从由栅电极，源电极，漏电极和与这些电极中的至少一个连接的布线的组中选择的至少一个半导体器件的组件，并通过无电镀法在铜籽晶层的图案上形成铜布线图案。

6. 发明授权

US07138715B2 Interconnect, interconnect forming method, thin film transistor, and display device 有权
标题翻译：互连，互连形成方法，薄膜晶体管和显示装置
公开(公告)号：US07138715B2
公开(公告)日：2006-11-21
申请号：US10974722
申请日：2004-10-28
申请人： Masaki Kado , Shigeru Aomori , Yoshitaka Yamamoto
发明人： Masaki Kado , Shigeru Aomori , Yoshitaka Yamamoto
IPC分类号： H01L23/48
CPC分类号： H01L29/4908 , H01L21/4846 , H01L23/498 , H01L27/12 , H01L29/42384 , H01L29/66757 , H01L29/78621 , H01L2924/0002 , H01L2924/12044 , H01L2924/00
摘要： An interconnect forming method according to the present invention includes a step of forming a barrier film for metal diffusion on an insulator film, a step of selectively forming a metal seed layer on the barrier film for metal diffusion using an electroless plating process, a step of selectively forming a metal conductive layer on the metal seed layer using an electroplating process, and a step of etching the barrier film for metal diffusion using the metal conductive layer as a mask.
摘要翻译：根据本发明的互连形成方法包括在绝缘膜上形成用于金属扩散的阻挡膜的步骤，使用化学镀处理在用于金属扩散的阻挡膜上选择性地形成金属籽晶层的步骤，使用电镀工艺在所述金属种子层上选择性地形成金属导电层，以及使用所述金属导电层作为掩模来蚀刻用于金属扩散的阻挡膜的步骤。

7. 发明授权

US06890849B2 Interconnect, interconnect forming method, thin film transistor, and display device 有权
公开(公告)号：US06890849B2
公开(公告)日：2005-05-10
申请号：US10660702
申请日：2003-09-12
申请人： Masaki Kado , Shigeru Aomori , Yoshitaka Yamamoto
发明人： Masaki Kado , Shigeru Aomori , Yoshitaka Yamamoto
IPC分类号： G02F1/136 , H01L21/336 , H01L21/48 , H01L23/498 , H01L27/12 , H01L29/423 , H01L29/49 , H01L29/786 , H01L29/40
CPC分类号： H01L29/4908 , H01L21/4846 , H01L23/498 , H01L27/12 , H01L29/42384 , H01L29/66757 , H01L29/78621 , H01L2924/0002 , H01L2924/12044 , H01L2924/00
摘要： An interconnect forming method according to the present invention includes a step of forming a barrier film for metal diffusion on an insulator film, a step of selectively forming a metal seed layer on the barrier film for metal diffusion using an electroless plating process, a step of selectively forming a metal conductive layer on the metal seed layer using an electroplating process, and a step of etching the barrier film for metal diffusion using the metal conductive layer as a mask.

8. 发明申请

US20050082538A1 Interconnect, interconnect forming method, thin film transistor, and display device 有权
标题翻译：互连，互连形成方法，薄膜晶体管和显示装置
公开(公告)号：US20050082538A1
公开(公告)日：2005-04-21
申请号：US10974722
申请日：2004-10-28
申请人： Masaki Kado , Shigeru Aomori , Yoshitaka Yamamoto
发明人： Masaki Kado , Shigeru Aomori , Yoshitaka Yamamoto
IPC分类号： G02F1/136 , H01L21/336 , H01L21/48 , H01L23/498 , H01L27/12 , H01L29/423 , H01L29/49 , H01L29/786 , H01L29/04
CPC分类号： H01L29/4908 , H01L21/4846 , H01L23/498 , H01L27/12 , H01L29/42384 , H01L29/66757 , H01L29/78621 , H01L2924/0002 , H01L2924/12044 , H01L2924/00
摘要： An interconnect forming method according to the present invention includes a step of forming a barrier film for metal diffusion on an insulator film, a step of selectively forming a metal seed layer on the barrier film for metal diffusion using an electroless plating process, a step of selectively forming a metal conductive layer on the metal seed layer using an electroplating process, and a step of etching the barrier film for metal diffusion using the metal conductive layer as a mask.
摘要翻译：根据本发明的互连形成方法包括在绝缘膜上形成用于金属扩散的阻挡膜的步骤，使用化学镀处理在用于金属扩散的阻挡膜上选择性地形成金属籽晶层的步骤，使用电镀工艺在所述金属种子层上选择性地形成金属导电层，以及使用所述金属导电层作为掩模来蚀刻用于金属扩散的阻挡膜的步骤。

9. 发明申请

US20120199822A1 ORGANIC TRANSISTOR 审中-公开
标题翻译：有机晶体管
公开(公告)号：US20120199822A1
公开(公告)日：2012-08-09
申请号：US13501079
申请日：2010-10-19
申请人： Masakazu Kamura , Shigeru Aomori , Yasutaka Kuzumoto
发明人： Masakazu Kamura , Shigeru Aomori , Yasutaka Kuzumoto
IPC分类号： H01L51/10
CPC分类号： H01L51/105 , H01L51/0545
摘要： An organic transistor (1) includes: an injection improvement layer (40) between a source electrode (14) and an organic semiconductor layer (16); and an extraction improvement layer (50) between a drain electrode (15) and the organic semiconductor layer (16). An electric dipole moment of a material or molecules of the extraction improvement layer (50) has an absolute value lager than that of the injection improvement layer (40). Accordingly, all carriers in the organic semiconductor, which are injected from the source electrode during operation of the transistor, can be drawn out (extracted) into the drain electrode. This reduce contact resistances. Therefore, provided are the organic transistor that reduces a contact resistance between the organic semiconductor layer and the source electrode and a contact resistance between the organic semiconductor layer and the drain electrode and attains to demonstrate stable operation, and a method for fabricating the organic transistor.
摘要翻译：有机晶体管（1）包括：在源电极（14）和有机半导体层（16）之间的注入改进层（40）; 以及在漏电极（15）和有机半导体层（16）之间的提取改进层（50）。提取改善层（50）的材料或分子的电偶极矩的绝对值大于注入改进层（40）的绝对值。因此，可以将在晶体管工作期间从源电极注入的有机半导体中的所有载流子拉出（提取）到漏电极中。这降低了接触电阻。因此，提供了降低有机半导体层与源电极之间的接触电阻的有机晶体管和有机半导体层与漏电极之间的接触电阻，并且实现了稳定的操作，以及制造有机晶体管的方法。

10. 发明申请

US20120146009A1 NOVEL COMPOUND, FIELD-EFFECTIVE TRANSISTOR, SOLAR CELL, METHOD FOR PRODUCING SAID COMPOUND, FIELD-EFFECTIVE TRANSISTOR, AND SOLAR CELL, COMPOSITION FOR ORGANIC SEMICONDUCTOR LAYER, AND COMPOSITION FOR P-TYPE SEMICONDUCTOR LAYER 审中-公开
标题翻译：新型化合物，场效应晶体管，太阳能电池，生产化合物的方法，场效应晶体管和太阳能电池，有机半导体层的组合物和P型半导体层的组合物
公开(公告)号：US20120146009A1
公开(公告)日：2012-06-14
申请号：US13390925
申请日：2010-08-19
申请人： Tetsuji Itoh , Shigeru Aomori
发明人： Tetsuji Itoh , Shigeru Aomori
IPC分类号： H01L51/30 , H01B1/12 , H01L51/48 , C07D241/38 , H01L51/40 , H01L51/46
CPC分类号： C07D241/38 , H01L51/0072 , H01L51/0558 , Y02E10/549 , Y02P70/521
摘要： A compound of the present invention is represented by the following formula (1): (where: R1 and R2 represent, independently, a substitutable C1 to C20 aliphatic hydrocarbon group; and R3 through R14 represent, independently, one of a hydrogen atom, a halogen atom, a substitutable aliphatic hydrocarbon group, and a substitutable aromatic hydrocarbon group). It is therefore possible to provide a novel compound which can be used as an organic semiconductor material.
摘要翻译：本发明的化合物由下式（1）表示：（其中：R 1和R 2独立地表示可取代的C 1至C 20脂族烃基; R 3至R 14独立地表示氢原子，卤原子，可取代的脂族烃基和可取代的芳族烃基）。因此，可以提供可用作有机半导体材料的新型化合物。

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