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    • 5. 发明申请
    • Reconfigurable circuit
    • 可重构电路
    • US20070230336A1
    • 2007-10-04
    • US11545477
    • 2006-10-11
    • Takashi HanaiTetsuo Kawano
    • Takashi HanaiTetsuo Kawano
    • H04L12/26
    • G06F15/7867
    • A reconfigurable circuit includes a network circuit for controlling connections between the output terminal and the input terminal of an arithmetic unit group, and a first selector connected between the arithmetic unit group and the network circuit. When a first control signal is in a first state, the first selector connects a first terminal of the arithmetic unit group to a first terminal of the network circuit, and also connects a second terminal of the arithmetic unit group to a second terminal of the network circuit. Meanwhile, when the first control signal is in a second state, the first selector connects the first terminal of the arithmetic unit group to the second terminal of the network circuit, and also connects the second terminal of the arithmetic unit group to the first terminal of the network circuit.
    • 可重构电路包括:网络电路,用于控制运算单元组的输出端和输入端之间的连接;以及连接在算术单元组和网络电路之间的第一选择器。 当第一控制信号处于第一状态时,第一选择器将运算单元组的第一端连接到网络电路的第一端,并且将运算单元组的第二端连接到网络的第二终端 电路。 同时,当第一控制信号处于第二状态时,第一选择器将运算单元组的第一端连接到网络电路的第二端,并且将运算单元组的第二端连接到 网络电路。
    • 7. 发明授权
    • Gate array
    • 门阵列
    • US4692783A
    • 1987-09-08
    • US922787
    • 1986-10-23
    • Hideo MonmaMasato IshiguroTetsuo Kawano
    • Hideo MonmaMasato IshiguroTetsuo Kawano
    • H01L21/822H01L21/82H01L21/8238H01L27/04H01L27/092H01L27/118H01L29/78
    • H01L27/11807H01L21/82
    • A gate array is disclosed having a plurality of basic cells each comprising a transistor whose gm is as low as one fifth to one twentieth that of the transistors in a conventional gate array. The low gm is provided by reducing the W/L ratio of the gate region of the transistor. The basic cell having the transistor of the low gm is formed to replace the conventional basic cell at a specified position in a specified basic cell array. The transistor of low gm reduces the number of basic cells necessary for forming a delay circuit, and elminates the need for an external resistance component which was formerly required when a pull-up or pull-down circuit or a monostable multivibrator was formed in the gate array.
    • 公开了具有多个基本单元的门阵列,每个基本单元包括其常规门阵列中的晶体管的gm低至五分之一至二十分之一的晶体管。 通过降低晶体管的栅极区域的W / L比来提供低gm。 具有低gm的晶体管的基本单元被形成为在指定的基本单元阵列中的指定位置处替换传统的基本单元。 低gm的晶体管减少形成延迟电路所需的基本电池数量,并且最终需要一种外部电阻元件,这在先前在栅极中形成上拉或下拉电路或单稳态多谐振荡器时是需要的 数组。
    • 9. 发明授权
    • Method of producing photoelectric conversion device having a multilayer structure formed on a substrate
    • 一种制造具有形成在基板上的多层结构的光电转换装置的方法
    • US08173475B2
    • 2012-05-08
    • US13011584
    • 2011-01-21
    • Tetsuo KawanoTakashi Koike
    • Tetsuo KawanoTakashi Koike
    • H01L21/00
    • H01L31/0336H01L31/0323H01L31/03923H01L31/03925H01L31/0749H01L31/18Y02E10/541Y02P70/521
    • A method of producing a photoelectric conversion device having a multilayer structure formed on a substrate, the multilayer structure including a lower electrode, a photoelectric conversion layer made of a compound semiconductor layer, an n-type buffer layer made of a compound semiconductor layer, and a transparent conductive layer, is disclosed. A reaction solution, which is an aqueous solution containing an n-type dopant element, at least one of ammonia and an ammonium salt, and thiourea, is prepared, the n-type dopant is diffused into the photoelectric conversion layer by immersing the substrate including the photoelectric conversion layer in the reaction solution controlled to a temperature in the range from 20° C. to 45° C.; and the buffer layer is deposited on the photoelectric conversion layer by immersing the substrate including the photoelectric conversion layer subjected to the diffusion step in the reaction solution controlled to a temperature in the range from 70° C. to 95° C.
    • 一种制造具有形成在基板上的多层结构的光电转换装置的方法,所述多层结构包括下电极,由化合物半导体层制成的光电转换层,由化合物半导体层制成的n型缓冲层,以及 公开了一种透明导电层。 制备作为含有n型掺杂剂元素,氨和铵盐中的至少一种和硫脲的水溶液的反应溶液,将n型掺杂剂浸渍在光电转换层中,将包含 将反应溶液中的光电转换层控制在20℃至45℃的温度范围内。 并且通过将包含经过扩散步骤的光电转换层的衬底浸入控制在70℃至95℃的温度的反应溶液中,将缓冲层沉积在光电转换层上。
    • 10. 发明授权
    • Reconfigurable circuit
    • 可重构电路
    • US08099540B2
    • 2012-01-17
    • US11545477
    • 2006-10-11
    • Takashi HanaiTetsuo Kawano
    • Takashi HanaiTetsuo Kawano
    • G06F13/00G06F15/00G06F7/38
    • G06F15/7867
    • A reconfigurable circuit includes a network circuit for controlling connections between the output terminal and the input terminal of an arithmetic unit group, and a first selector connected between the arithmetic unit group and the network circuit. When a first control signal is in a first state, the first selector connects a first terminal of the arithmetic unit group to a first terminal of the network circuit, and also connects a second terminal of the arithmetic unit group to a second terminal of the network circuit. Meanwhile, when the first control signal is in a second state, the first selector connects the first terminal of the arithmetic unit group to the second terminal of the network circuit, and also connects the second terminal of the arithmetic unit group to the first terminal of the network circuit.
    • 可重构电路包括:网络电路,用于控制运算单元组的输出端和输入端之间的连接;以及连接在算术单元组和网络电路之间的第一选择器。 当第一控制信号处于第一状态时,第一选择器将运算单元组的第一端连接到网络电路的第一端,并且将运算单元组的第二端连接到网络的第二终端 电路。 同时,当第一控制信号处于第二状态时,第一选择器将运算单元组的第一端连接到网络电路的第二端,并且将运算单元组的第二端连接到 网络电路。