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    • 4. 发明申请
    • SCANNING ELECTRON BEAM DEVICE AND DIMENSION MEASUREMENT METHOD USING SAME
    • 扫描电子束装置和尺寸测量方法
    • US20140339425A1
    • 2014-11-20
    • US14364392
    • 2012-11-26
    • Hitachi High-technologies Corporation
    • Tasuku YanoYasunari SohdaMuneyuki FukudaKatsunori OnukiHajime KawanoNaomasa Suzuki
    • G01B15/00H01J37/244H01J37/21
    • G01B15/00G01B2210/56H01J37/21H01J37/244H01J37/28H01J2237/20H01J2237/281H01L22/12
    • A scanning electron beam device having: a deflector (5) for deflecting an electron beam (17) emitted from an electron source (1); an objective lens (7) for causing the electron beam to converge; a retarding electrode; a stage (9) for placing a wafer (16); and a controller (15); wherein the stage can be raised and lowered. In the low acceleration voltage region, the controller performs rough adjustment and fine adjustment of the focus in relation to the variation in the height of the wafer using electromagnetic focusing performed through excitation current adjustment of the objective lens. In the high acceleration voltage region, the controller performs rough adjustment of the focus in relation to the variation in the height of the wafer by mechanical focusing performed through raising and lowering of the stage, and performs fine adjustment by electrostatic focusing performed through adjustment of the retarding voltage. It thereby becomes possible to provide a scanning electron beam device that measures, in a highly accurate manner, both the upper part and the bottom part of a groove or a hole having a high aspect ratio.
    • 一种扫描电子束装置,具有:用于偏转从电子源(1)发射的电子束(17)的偏转器(5)。 用于使电子束会聚的物镜(7); 延迟电极; 用于放置晶片(16)的平台(9); 和控制器(15); 其中可以升高和降低载物台。 在低加速度电压区域中,控制器使用通过物镜的激励电流调节执行的电磁聚焦,相对于晶片的高度变化而进行粗略调整和微调。 在高加速电压区域中,控制器通过机架上升和下降进行机械聚焦,进行相对于晶片高度变化的聚焦的粗略调整,通过调整 延迟电压。 从而可以提供一种以高度准确的方式测量具有高纵横比的凹槽或孔的上部和底部两者的扫描电子束装置。