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1. 发明授权

US09577145B2 Semiconductor light emitting device 有权
标题翻译：半导体发光器件
公开(公告)号：US09577145B2
公开(公告)日：2017-02-21
申请号：US12536859
申请日：2009-08-06
申请人： Hwan Hee Jeong
发明人： Hwan Hee Jeong
IPC分类号： H01L33/00 , H01L33/08 , H01L33/38
CPC分类号： H01L33/08 , H01L33/387
摘要： Provided is a semiconductor light emitting device.The semiconductor light emitting device comprises a second electrode layer; a light emitting structure comprising a plurality of compound semiconductor layers under the second electrode layer; at least one dividing groove that divides inner areas of the lower layers of the light emitting structure into a plurality of areas; and a first electrode under the light emitting structure.
摘要翻译：半导体发光器件包括第二电极层; 发光结构，包括在所述第二电极层下面的多个化合物半导体层; 至少一个划分凹槽，其将所述发光结构的下层的内部区域划分成多个区域; 以及在发光结构下方的第一电极。

2. 发明授权

US09559254B2 Light emitting device and light emitting device package 有权
标题翻译：发光器件和发光器件封装
公开(公告)号：US09559254B2
公开(公告)日：2017-01-31
申请号：US13442120
申请日：2012-04-09
申请人： Hwan Hee Jeong
发明人： Hwan Hee Jeong
IPC分类号： H01L29/18 , H01L33/00 , H01L33/08 , H01L33/38 , H01L33/14 , H01L27/15 , H01L33/40
CPC分类号： H01L33/08 , H01L27/153 , H01L33/0079 , H01L33/145 , H01L33/382 , H01L33/385 , H01L33/405 , H01L2224/48091 , H01L2924/00014
摘要： A light emitting device according to the embodiment includes a first light emitting structure including a first conductive type first semiconductor layer, a first active layer under the first conductive type first semiconductor layer, and a second conductive type second semiconductor layer under the first active layer; a first reflective electrode under the first light emitting structure; a second light emitting structure including a first conductive type third semiconductor layer, a second active layer under the first conductive type third semiconductor layer, and a second conductive type fourth semiconductor layer under the second active layer; a second reflective electrode under the second light emitting structure; a contact part that electrically connects the first conductive type first semiconductor layer of the first light emitting structure to the second reflective electrode; and a first insulating ion implantation layer between the contact part and the second conductive type second semiconductor layer.
摘要翻译：根据实施例的发光器件包括第一发光结构，其包括第一导电型第一半导体层，第一导电型第一半导体层下的第一有源层和位于第一有源层下的第二导电型第二半导体层; 在第一发光结构下的第一反射电极; 第二发光结构，包括第一导电类型第三半导体层，第一导电类型第三半导体层下的第二有源层和第二有源层下的第二导电类型第四半导体层; 在第二发光结构下面的第二反射电极; 将第一发光结构的第一导电型第一半导体层与第二反射电极电连接的接触部; 以及在所述接触部和所述第二导电型第二半导体层之间的第一绝缘离子注入层。

3. 发明授权

US08884336B2 Light emitting device 有权
标题翻译：发光装置
公开(公告)号：US08884336B2
公开(公告)日：2014-11-11
申请号：US13625567
申请日：2012-09-24
申请人： Hwan Hee Jeong
发明人： Hwan Hee Jeong
IPC分类号： H01L31/072 , H01L31/109 , H01L31/0328 , H01L31/0336 , H01L27/15 , H01L33/38
CPC分类号： H01L27/15 , H01L33/382 , H01L2224/48091 , H01L2224/49107 , H01L2924/12032 , H01L2924/00014 , H01L2924/00
摘要： A light emitting device according to the embodiment includes a first electrode; a light emitting structure including a first semiconductor layer over the first electrode, an active layer over the first semiconductor layer, and a second semiconductor layer over the second semiconductor layer; a second electrode over the second semiconductor layer; and a connection member having one end making contact with the first semiconductor layer and the other end making contact with the second semiconductor layer to form a schottky contact with respect to one of the first and second semiconductor layers.
摘要翻译：根据实施例的发光器件包括第一电极; 包括在所述第一电极上方的第一半导体层，所述第一半导体层上的有源层和所述第二半导体层上的第二半导体层的发光结构; 在所述第二半导体层上的第二电极; 以及连接构件，其一端与第一半导体层接触，另一端与第二半导体层接触，以形成相对于第一和第二半导体层之一的肖特基接触。

4. 发明授权

US08872215B2 Light emitting device and light emitting device package 有权
标题翻译：发光器件和发光器件封装
公开(公告)号：US08872215B2
公开(公告)日：2014-10-28
申请号：US13033224
申请日：2011-02-23
申请人： Kwang Ki Choi , Hwan Hee Jeong , Sang Youl Lee , June O Song
发明人： Kwang Ki Choi , Hwan Hee Jeong , Sang Youl Lee , June O Song
IPC分类号： H01L33/36 , H01L33/38 , H01L33/14 , H01L27/15 , H01L33/22
CPC分类号： H01L27/15 , H01L29/78 , H01L33/22 , H01L33/38 , H01L33/385 , H01L33/46 , H01L33/62 , H01L2224/48091 , H01L2924/13062 , H01L2924/13091 , H01L2924/00014 , H01L2924/00
摘要： A light emitting device according to the embodiment includes a first electrode; a light emitting structure including a first semiconductor layer, an active layer and a second semiconductor layer on the first electrode; a second electrode on the light emitting structure; and a control switch installed on the light emitting structure to control the light emitting structure.
摘要翻译：根据实施例的发光器件包括第一电极; 在第一电极上包括第一半导体层，有源层和第二半导体层的发光结构; 在发光结构上的第二电极; 以及安装在发光结构上以控制发光结构的控制开关。

5. 发明授权

US08791494B2 Light emitting device and light emitting device package 有权
公开(公告)号：US08791494B2
公开(公告)日：2014-07-29
申请号：US14055675
申请日：2013-10-16
申请人： Hwan Hee Jeong , Sang Youl Lee , Ji Hyung Moon , June O Song , Kwang Ki Choi
发明人： Hwan Hee Jeong , Sang Youl Lee , Ji Hyung Moon , June O Song , Kwang Ki Choi
IPC分类号： H01L33/00 , H01L33/36 , H01L33/44 , H01L33/40 , H01L33/42 , H01L33/10 , H01L33/22
CPC分类号： H01L33/44 , F21K9/23 , F21Y2105/10 , F21Y2113/13 , F21Y2115/10 , H01L33/0079 , H01L33/06 , H01L33/10 , H01L33/22 , H01L33/32 , H01L33/36 , H01L33/38 , H01L33/387 , H01L33/40 , H01L33/42 , H01L2224/48091 , H01L2224/48247 , H01L2224/48257 , H01L2924/0002 , H01L2924/12032 , H01L2924/00014 , H01L2924/00
摘要： Disclosed are a light emitting device and a light emitting device package. The light emitting device includes a light emitting structure including a first conductive semiconductor layer, an active layer on the first conductive semiconductor layer, and a second conductive semiconductor layer on the active layer, an adhesive layer contacting a top surface of the first conductive semiconductor layer, a first electrode contacting a top surface of the first conductive semiconductor and a top surface of the adhesive layer, and a second electrode contacting the second conductive semiconductor layer, wherein the adhesive layer contacting the first electrode is spaced apart from the second electrode.

6. 发明授权

US08772815B2 Semiconductor light emitting device having a protecting member and method of fabricating the same 有权
标题翻译：具有保护部件的半导体发光元件及其制造方法
公开(公告)号：US08772815B2
公开(公告)日：2014-07-08
申请号：US12445182
申请日：2008-12-17
申请人： Hwan Hee Jeong
发明人： Hwan Hee Jeong
IPC分类号： H01L33/00
CPC分类号： H01L33/24 , H01L33/0079 , H01L33/22 , H01L33/32
摘要： A semiconductor light emitting device has a light emitting structure including a first conductive semiconductor layer, an active layer on the first conductive semiconductor layer, and a second conductive semiconductor layer on the active layer, and a nitride semiconductor layer on side surfaces of the second conductive semiconductor layer along an outer periphery of the second conductive semiconductor layer. An ohmic layer directly contacts the second conductive semiconductor layer and the nitride semiconductor layer.
摘要翻译：半导体发光器件具有包括第一导电半导体层，第一导电半导体层上的有源层和有源层上的第二导电半导体层的发光结构，以及在第二导电半导体层的侧表面上的氮化物半导体层半导体层沿着第二导电半导体层的外周。欧姆层直接接触第二导电半导体层和氮化物半导体层。

7. 发明授权

US08723202B2 Semiconductor light emitting device having roughness layer 有权
标题翻译：具有粗糙层的半导体发光器件
公开(公告)号：US08723202B2
公开(公告)日：2014-05-13
申请号：US12883554
申请日：2010-09-16
申请人： Hwan Hee Jeong
发明人： Hwan Hee Jeong
IPC分类号： H01L33/00
CPC分类号： H01L33/22 , H01L33/04 , H01L33/32
摘要： A semiconductor light emitting device includes a substrate, a first conductive semiconductor layer, an active layer on the first conductive semiconductor layer, a second conductive semiconductor layer on the active layer, and a roughness layer on the second conductive semiconductor layer. The second conductive semiconductor layer includes a shape of multiple horns, and the roughness layer includes a shape of multiple horns. The second conductive semiconductor layer includes a roughness in which horn shapes and inverse-horn-shaped shapes are alternately formed, and the roughness has a height of about 0.5 μm to about 1.2 μm and a diameter of about 0.3 μm to about 1.0 μm.
摘要翻译：半导体发光器件包括衬底，第一导电半导体层，第一导电半导体层上的有源层，有源层上的第二导电半导体层以及第二导电半导体层上的粗糙层。第二导电半导体层包括多个喇叭形状，粗糙层包括多个喇叭形状。第二导电半导体层包括交替形成喇叭形状和反角形状的粗糙度，并且粗糙度具有约0.5μm至约1.2μm的高度和约0.3μm至约1.0μm的直径。

8. 发明授权

US08653547B2 Light emitting device and light emitting device package 有权
标题翻译：发光器件和发光器件封装
公开(公告)号：US08653547B2
公开(公告)日：2014-02-18
申请号：US12943628
申请日：2010-11-10
申请人： Hwan Hee Jeong , Sang Youl Lee , June O Song , Kwang Ki Choi
发明人： Hwan Hee Jeong , Sang Youl Lee , June O Song , Kwang Ki Choi
IPC分类号： H01L33/00
CPC分类号： H01L33/22 , H01L33/005 , H01L33/36 , H01L33/38 , H01L33/405 , H01L33/42 , H01L33/60 , H01L33/62 , H01L2224/45139 , H01L2224/48091 , H01L2924/12032 , H01L2933/0016 , H01L2924/00014 , H01L2924/00 , H01L2924/00011
摘要： Provided are a light emitting device and a light emitting device package. The light emitting device includes a first electrode, a light emitting structure including a first semiconductor layer, an active layer, and a second semiconductor layer on the first electrode, a second electrode on the light emitting structure, and a reflective member on at least lateral surface of the second electrode.
摘要翻译：提供了一种发光器件和发光器件封装。发光器件包括第一电极，在第一电极上包括第一半导体层，有源层和第二半导体层的发光结构，发光结构上的第二电极和至少侧向的反射构件第二电极的表面。

9. 发明授权

US08575644B2 Light emitting device having an electro-static discharge protection part 有权
标题翻译：具有静电放电保护部的发光装置
公开(公告)号：US08575644B2
公开(公告)日：2013-11-05
申请号：US13192142
申请日：2011-07-27
申请人： Hwan Hee Jeong , Sang Youl Lee , Jung Hyeok Bae , Kwang Ki Choi , June O Song
发明人： Hwan Hee Jeong , Sang Youl Lee , Jung Hyeok Bae , Kwang Ki Choi , June O Song
IPC分类号： H01L33/00
CPC分类号： H01L27/15 , H01L33/0079 , H01L33/405 , H01L33/44 , H01L2224/48227 , H01L2924/12032 , H01L2924/00
摘要： Provided are a light emitting device and a light emitting device package. According to the light emitting device, a light emitting part and an electro-static discharge (ESD) protection part are disposed on a conductive support member. A connection layer electrically connects a first conducitve type semiconductor layer of the light emitting part to a second conductive type semiconductor layer of the ESD protection part. A ptrtection member is disposed on the connection layer and the ESD protection layer.
摘要翻译：提供了一种发光器件和发光器件封装。根据发光装置，发光部和静电放电（ESD）保护部设置在导电性支撑部件上。连接层将发光部的第一导通型半导体层与ESD保护部的第二导电型半导体层电连接。保护构件设置在连接层和ESD保护层上。

10. 发明授权

US08471241B2 Light emitting device, light emitting device package, and lighting system 有权
标题翻译：发光装置，发光装置封装和照明系统
公开(公告)号：US08471241B2
公开(公告)日：2013-06-25
申请号：US13049126
申请日：2011-03-16
申请人： Kwang Ki Choi , Hwan Hee Jeong , Sang Youl Lee , June O Song , Ji Hyung Moon
发明人： Kwang Ki Choi , Hwan Hee Jeong , Sang Youl Lee , June O Song , Ji Hyung Moon
IPC分类号： H01L33/06
CPC分类号： H01L33/62 , H01L33/0079 , H01L33/22 , H01L33/385 , H01L33/44 , H01L2924/0002 , H01L2924/00
摘要： Provided are a light emitting device, a light emitting device package, and a lighting system. The light emitting device includes a light emitting structure layer, a conductive layer, a bonding layer, a support member, first and second pads, and first and second electrodes. The light emitting structure layer includes a first conductive type semiconductor layer, an active layer, and a second conductive type semiconductor layer. The conductive layer is disposed under the light emitting structure layer. The bonding layer is disposed under the conductive layer. The support member is disposed under the bonding layer. The first pad is disposed under the support member. The second pad is disposed under the support member at a distance from the first pad. The first electrode is connected between the first conductive type semiconductor layer and the first pad. The second electrode is connected between the bonding layer and the second pad.
摘要翻译：提供了一种发光器件，发光器件封装和照明系统。发光器件包括发光结构层，导电层，接合层，支撑构件，第一和第二焊盘以及第一和第二电极。发光结构层包括第一导电类型半导体层，有源层和第二导电类型半导体层。导电层设置在发光结构层的下方。接合层设置在导电层下方。支撑构件设置在接合层下方。第一衬垫设置在支撑构件的下方。第二垫片设置在支撑构件的下方距离第一垫片一定距离处。第一电极连接在第一导电类型半导体层和第一焊盘之间。第二电极连接在接合层和第二焊盘之间。

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