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1. 发明授权

US09793080B2 Electromechanical power switch integrated circuits and devices and methods thereof 有权
公开(公告)号：US09793080B2
公开(公告)日：2017-10-17
申请号：US15240799
申请日：2016-08-18
申请人： INOSO, LLC
发明人： Kiyoshi Mori , Ziep Tran , Giang Trung Dao , Michael Edward Ramon
IPC分类号： B81B3/00 , H01H59/00 , H01L27/10 , H01H49/00 , H01H1/00
CPC分类号： H01H59/0009 , B81B3/0086 , H01H1/0094 , H01H49/00
摘要： An electromechanical power switch device and methods thereof. At least some of the illustrative embodiments are devices including a semiconductor substrate, at least one integrated circuit device on a front surface of the semiconductor substrate, an insulating layer on the at least one integrated circuit device, and an electromechanical power switch on the insulating layer. By way of example, the electromechanical power switch may include a source and a drain, a body region disposed between the source and the drain, and a gate including a switching metal layer. In some embodiments, the body region includes a first body portion and a second body portion spaced a distance from the first body portion and defining a body discontinuity therebetween. Additionally, in various examples, the switching metal layer may be disposed over the body discontinuity.

2. 发明授权

US09202756B1 Method of forming a stacked low temperature transistor and related devices 有权
标题翻译：形成堆叠低温晶体管及相关器件的方法
公开(公告)号：US09202756B1
公开(公告)日：2015-12-01
申请号：US14805415
申请日：2015-07-21
申请人： INOSO, LLC
发明人： Ziep Tran , Kiyoshi Mori , Giang Trung Dao , Michael Edward Ramon
IPC分类号： H01L21/82 , H01L21/86
CPC分类号： H01L21/8213 , H01L21/8221 , H01L21/845 , H01L21/86 , H01L27/0211 , H01L27/0688 , H01L27/088 , H01L27/092 , H01L27/1211
摘要： A method of forming a stacked low temperature transistor and related devices. At least some of the illustrative embodiments are methods comprising forming at least one integrated circuit device on a front surface of a bulk semiconductor substrate, and depositing an inter-layer dielectric on the at least one integrated circuit device. A semiconductor layer may then be deposited on the inter-layer dielectric. In some embodiments, a transistor is formed within the semiconductor layer. In some examples, the transistor includes a gate structure formed over the semiconductor layer as well as source/drain regions formed within the semiconductor layer disposed adjacent to and on either side of the gate structure. A metal layer may then be deposited over the transistor, after which an annealing process is performed to induce a reaction between the source/drain regions and the metal layer.
摘要翻译：一种叠层低温晶体管及相关器件的形成方法。示例性实施例中的至少一些是包括在体半导体衬底的前表面上形成至少一个集成电路器件，以及在所述至少一个集成电路器件上沉积层间电介质的方法。然后可以在层间电介质上沉积半导体层。在一些实施例中，在半导体层内形成晶体管。在一些示例中，晶体管包括形成在半导体层上的栅极结构以及形成在与栅极结构的任一侧相邻设置的半导体层内的源极/漏极区域。然后可以在晶体管上沉积金属层，之后执行退火处理以引起源极/漏极区域与金属层之间的反应。

3. 发明申请

US20200303148A1 Electromechanical Power Switch Integrated Circuits And Devices And Methods Thereof 审中-公开
公开(公告)号：US20200303148A1
公开(公告)日：2020-09-24
申请号：US16827427
申请日：2020-03-23
申请人： INOSO, LLC
发明人： Kiyoshi Mori , Ziep Tran , Giang Trung Dao , Michael Edward Ramon
IPC分类号： H01H59/00 , H01H49/00 , H01H1/00 , B81B3/00
摘要： An electromechanical power switch device and methods thereof. At least some of the illustrative embodiments are devices including a semiconductor substrate, at least one integrated circuit device on a front surface of the semiconductor substrate, an insulating layer on the at least one integrated circuit device, and an electromechanical power switch on the insulating layer. By way of example, the electromechanical power switch may include a source and a drain, a body region disposed between the source and the drain, and a gate including a switching metal layer. In some embodiments, the body region includes a first body portion and a second body portion spaced a distance from the first body portion and defining a body discontinuity therebetween. Additionally, in various examples, the switching metal layer may be disposed over the body discontinuity.

4. 发明授权

US08916872B1 Method of forming a stacked low temperature diode and related devices 有权
标题翻译：形成堆叠式低温二极管及相关器件的方法
公开(公告)号：US08916872B1
公开(公告)日：2014-12-23
申请号：US14329792
申请日：2014-07-11
申请人： Inoso, LLC
发明人： Ziep Tran , Kiyoshi Mori , Giang Trung Dao , Michael Edward Ramon
IPC分类号： H01L29/40 , H01L29/88 , H01L29/872 , H01L29/66 , H01L21/265 , H01L29/04 , H01L27/22 , H01L27/24
CPC分类号： H01L27/2427 , H01L21/26506 , H01L27/224 , H01L27/2409 , H01L29/66136 , H01L29/861
摘要： A method of forming a stacked low temperature diode and related devices. At least some of the illustrative embodiments are methods comprising forming a metal interconnect disposed within an inter-layer dielectric. The metal interconnect is electrically coupled to at least one underlying integrated circuit device. A barrier layer is deposited on the metal interconnect and the inter-layer dielectric. A semiconductor layer is deposited on the barrier layer. A metal layer is deposited on the semiconductor layer. The barrier layer, the semiconductor layer, and the metal layer are patterned. A low-temperature anneal is performed to induce a reaction between the patterned metal layer and the patterned semiconductor layer. The reaction forms a silicided layer within the patterned semiconductor layer. Moreover, the reaction forms a P-N junction diode.
摘要翻译：一种叠层低温二极管及相关器件的形成方法。示例性实施例中的至少一些是包括形成布置在层间电介质内的金属互连的方法。金属互连电耦合到至少一个下面的集成电路器件。阻挡层沉积在金属互连和层间电介质上。半导体层沉积在阻挡层上。金属层沉积在半导体层上。对阻挡层，半导体层和金属层进行图案化。执行低温退火以引起图案化金属层和图案化半导体层之间的反应。反应在图案化的半导体层内形成硅化物层。此外，该反应形成P-N结二极管。

5. 发明申请

US20210193422A1 Electromechanical Power Switch Integrated Circuits And Devices And Methods Thereof 有权
公开(公告)号：US20210193422A1
公开(公告)日：2021-06-24
申请号：US17135979
申请日：2020-12-28
申请人： INOSO, LLC
发明人： Kiyoshi Mori , Ziep Tran , Giang Trung Dao , Michael Edward Ramon
IPC分类号： H01H59/00 , B81B3/00 , H01H1/00 , H01H49/00
摘要： An electromechanical power switch device and methods thereof. At least some of the illustrative embodiments are devices including a semiconductor substrate, at least one integrated circuit device on a front surface of the semiconductor substrate, an insulating layer on the at least one integrated circuit device, and an electromechanical power switch on the insulating layer. By way of example, the electromechanical power switch may include a source and a drain, a body region disposed between the source and the drain, and a gate including a switching metal layer. In some embodiments, the body region includes a first body portion and a second body portion spaced a distance from the first body portion and defining a body discontinuity therebetween. Additionally, in various examples, the switching metal layer may be disposed over the body discontinuity.

6. 发明申请

US20180122605A1 ELECTROMECHANICAL POWER SWITCH INTEGRATED CIRCUITS AND DEVICES AND METHODS THEREOF 审中-公开
公开(公告)号：US20180122605A1
公开(公告)日：2018-05-03
申请号：US15785120
申请日：2017-10-16
申请人： INOSO, LLC
发明人： Kiyoshi Mori , Ziep Tran , Giang Trung Dao , Michael Edward Ramon
IPC分类号： H01H59/00 , H01H49/00 , B81B3/00 , H01H1/00
CPC分类号： H01H59/0009 , B81B3/0086 , H01H1/0094 , H01H49/00
摘要： An electromechanical power switch device and methods thereof. At least some of the illustrative embodiments are devices including a semiconductor substrate, at least one integrated circuit device on a front surface of the semiconductor substrate, an insulating layer on the at least one integrated circuit device, and an electromechanical power switch on the insulating layer. By way of example, the electromechanical power switch may include a source and a drain, a body region disposed between the source and the drain, and a gate including a switching metal layer. In some embodiments, the body region includes a first body portion and a second body portion spaced a distance from the first body portion and defining a body discontinuity therebetween. Additionally, in various examples, the switching metal layer may be disposed over the body discontinuity.

7. 发明授权

US09087689B1 Method of forming a stacked low temperature transistor and related devices 有权
公开(公告)号：US09087689B1
公开(公告)日：2015-07-21
申请号：US14329759
申请日：2014-07-11
申请人： INOSO, LLC
发明人： Ziep Tran , Kiyoshi Mori , Giang Trung Dao , Michael Edward Ramon
IPC分类号： H01L29/45 , H01L29/66 , H01L27/02 , H01L21/8238 , H01L21/82 , H01L21/84 , H01L21/86 , H01L29/20 , H01L29/16 , H01L27/092 , H01L27/12
CPC分类号： H01L21/8213 , H01L21/8221 , H01L21/845 , H01L21/86 , H01L27/0211 , H01L27/0688 , H01L27/088 , H01L27/092 , H01L27/1211
摘要： A method of forming a stacked low temperature transistor and related devices. At least some of the illustrative embodiments are methods comprising forming at least one integrated circuit device on a front surface of a bulk semiconductor substrate, and depositing an inter-layer dielectric on the at least one integrated circuit device. A semiconductor layer may then be deposited on the inter-layer dielectric. In some embodiments, a transistor is formed within the semiconductor layer. In some examples, the transistor includes a gate structure formed over the semiconductor layer as well as source/drain regions formed within the semiconductor layer disposed adjacent to and on either side of the gate structure. A metal layer may then be deposited over the transistor, after which an annealing process is performed to induce a reaction between the source/drain regions and the metal layer.

8. 发明授权

US11562871B2 Electromechanical power switch integrated circuits and devices and methods thereof 有权
公开(公告)号：US11562871B2
公开(公告)日：2023-01-24
申请号：US17135979
申请日：2020-12-28
申请人： INOSO, LLC
发明人： Kiyoshi Mori , Ziep Tran , Giang Trung Dao , Michael Edward Ramon
IPC分类号： H01H59/00 , B81B3/00 , H01H1/00 , H01H49/00
摘要： An electromechanical power switch device and methods thereof. At least some of the illustrative embodiments are devices including a semiconductor substrate, at least one integrated circuit device on a front surface of the semiconductor substrate, an insulating layer on the at least one integrated circuit device, and an electromechanical power switch on the insulating layer. By way of example, the electromechanical power switch may include a source and a drain, a body region disposed between the source and the drain, and a gate including a switching metal layer. In some embodiments, the body region includes a first body portion and a second body portion spaced a distance from the first body portion and defining a body discontinuity therebetween. Additionally, in various examples, the switching metal layer may be disposed over the body discontinuity.

9. 发明授权

US10600600B2 Electromechanical power switch integrated circuits and devices and methods thereof 有权
公开(公告)号：US10600600B2
公开(公告)日：2020-03-24
申请号：US15785120
申请日：2017-10-16
申请人： INOSO, LLC
发明人： Kiyoshi Mori , Ziep Tran , Giang Trung Dao , Michael Edward Ramon
IPC分类号： H01H59/00 , H01H49/00 , H01H1/00 , B81B3/00
摘要： An electromechanical power switch device and methods thereof. At least some of the illustrative embodiments are devices including a semiconductor substrate, at least one integrated circuit device on a front surface of the semiconductor substrate, an insulating layer on the at least one integrated circuit device, and an electromechanical power switch on the insulating layer. By way of example, the electromechanical power switch may include a source and a drain, a body region disposed between the source and the drain, and a gate including a switching metal layer. In some embodiments, the body region includes a first body portion and a second body portion spaced a distance from the first body portion and defining a body discontinuity therebetween. Additionally, in various examples, the switching metal layer may be disposed over the body discontinuity.

10. 发明申请

US20170053764A1 ELECTROMECHANICAL POWER SWITCH INTEGRATED CIRCUITS AND DEVICES AND METHODS THEREOF 有权
标题翻译：电力电力开关集成电路及其装置及其方法
公开(公告)号：US20170053764A1
公开(公告)日：2017-02-23
申请号：US15240799
申请日：2016-08-18
申请人： INOSO, LLC
发明人： Kiyoshi Mori , Ziep Tran , Giang Trung Dao , Michael Edward Ramon
IPC分类号： H01H59/00 , B81B7/02 , H01H49/00 , B81C1/00
CPC分类号： H01H59/0009 , B81B3/0086 , H01H1/0094 , H01H49/00
摘要： An electromechanical power switch device and methods thereof. At least some of the illustrative embodiments are devices including a semiconductor substrate, at least one integrated circuit device on a front surface of the semiconductor substrate, an insulating layer on the at least one integrated circuit device, and an electromechanical power switch on the insulating layer. By way of example, the electromechanical power switch may include a source and a drain, a body region disposed between the source and the drain, and a gate including a switching metal layer. In some embodiments, the body region includes a first body portion and a second body portion spaced a distance from the first body portion and defining a body discontinuity therebetween. Additionally, in various examples, the switching metal layer may be disposed over the body discontinuity.
摘要翻译：一种机电式电力开关装置及其方法。至少一些示例性实施例是包括半导体衬底，在半导体衬底的前表面上的至少一个集成电路器件，至少一个集成电路器件上的绝缘层和绝缘层上的机电电源开关的器件。作为示例，机电功率开关可以包括源极和漏极，设置在源极和漏极之间的体区，以及包括开关金属层的栅极。在一些实施例中，身体区域包括第一主体部分和与第一主体部分间隔开一定距离并且在它们之间限定身体不连续性的第二主体部分。此外，在各种示例中，开关金属层可以设置在身体不连续之上。

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