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    • 5. 发明授权
    • High-voltage charge pump
    • 高压电荷泵
    • US08841958B1
    • 2014-09-23
    • US13793899
    • 2013-03-11
    • InvenSense, Inc.
    • Derek ShaefferBaris Cagdaser
    • G05F1/10G05F3/02
    • G05F3/02H02M3/073
    • A charge pump circuit is disclosed. The charge pump circuit comprises a transfer capacitor receiving a first clock phase and a driving capacitor receiving a second clock phase, the second clock phase opposite to the first clock phase. The circuit includes a first switch coupling an input node to the transfer capacitor. The first switch being controlled by the driving capacitor. The circuit further includes a second switch coupling the input node to the driving capacitor. The second switch being controlled by the transfer capacitor. The circuit also includes a third switch coupling the transfer capacitor to an output node. The third switch being controlled by the driving capacitor. The third switch operating in phase opposition to the first switch. The circuit finally includes a charge storage capacitor coupled to the output node.
    • 公开了电荷泵电路。 电荷泵电路包括接收第一时钟相位的转移电容器和接收第二时钟相位的驱动电容器,第二时钟相位与第一时钟相位相反。 电路包括将输入节点耦合到转移电容器的第一开关。 第一开关由驱动电容器控制。 电路还包括将输入节点耦合到驱动电容器的第二开关。 第二开关由转移电容器控制。 电路还包括将传输电容器耦合到输出节点的第三开关。 第三开关由驱动电容器控制。 第三开关与第一开关相反地工作。 电路最后包括耦合到输出节点的电荷存储电容器。
    • 6. 发明申请
    • CANCELLATION OF DYNAMIC OFFSET IN MOS RESISTORS
    • 消除MOS电阻中的动态偏移
    • US20140118073A1
    • 2014-05-01
    • US13775057
    • 2013-02-22
    • INVENSENSE, INC.
    • Baris CagdaserDu Chen
    • G05F3/24H03F3/16
    • G05F3/242H03F3/16H03F3/193
    • A circuit utilizes a MOS device in a triode mode of operation and includes a biasing circuit and a MOS device. The MOS device has a drain, a source, and a gate terminal, and is coupled to the biasing circuit. The source terminal, drain terminal, and gate terminal each has a potential and the drain and the source terminals have a resistance. The biasing circuit couples the drain and source terminals of the MOS device to the gate terminal of the MOS device. The biasing circuit couples a DC potential to the gate terminal to adjust the resistance between the source and drain terminals of the MOS device. The resistance between the source and drain terminals is a non-linear function of voltage potentials at the source and drain terminals. The biasing circuit reduces the non-linearity of the resistance between the drain and source terminals by modulating the potential at the gate terminal by a combination of source and drain terminal potentials.
    • 电路采用三极管工作模式的MOS器件,并包括偏置电路和MOS器件。 MOS器件具有漏极,源极和栅极端子,并且耦合到偏置电路。 源极端子,漏极端子和栅极端子各自具有电势,漏极和源极端子具有电阻。 偏置电路将MOS器件的漏极和源极端子耦合到MOS器件的栅极端子。 偏置电路将DC电位耦合到栅极端子以调节MOS器件的源极和漏极端子之间的电阻。 源极和漏极端子之间的电阻是源极和漏极端子处的电压电位的非线性函数。 偏置电路通过源极和漏极端子电位的组合调制栅极端子处的电位来降低漏极和源极端之间的电阻的非线性。
    • 9. 发明申请
    • INTEGRATED TEMPERATURE SENSOR IN MICROPHONE PACKAGE
    • 集成温度传感器在麦克风包装
    • US20160165330A1
    • 2016-06-09
    • US14856262
    • 2015-09-16
    • INVENSENSE, INC.
    • Anthony D. MinerviniKieran HarneyAleksey S. KhenkinBaris Cagdaser
    • H04R1/02H04R19/04G01K13/00H04R19/00
    • H04R1/028B81B7/0087B81B2201/0257B81B2201/0278B81B2207/012G01K13/00H04R19/005H04R19/04H04R2231/00
    • Various embodiments provide for an integrated temperature sensor and microphone package where the temperature sensor is located in, over, or near an acoustic port associated with the microphone. This placement of the temperature sensor near the acoustic port enables the temperature sensor to more accurately determine the ambient air temperature and reduces heat island interference cause by heat associated with the integrated circuit. In an embodiment, the temperature sensor can be a thermocouple formed over a substrate, with the temperature sensing portion of the thermocouple formed over the acoustic port. In another embodiment, the temperature sensor can be formed on an application specific integrated circuit that extends into or over the acoustic port. In another embodiment, a thermally conductive channel in a substrate can be placed near the acoustic port to enable the temperature sensor to determine the ambient temperature via the channel.
    • 各种实施例提供了一种集成温度传感器和麦克风封装,其中温度传感器位于与麦克风相关联的声学端口中,上方或附近。 温度传感器靠近声学端口的放置使得温度传感器能够更准确地确定环境空气温度并减少与集成电路相关联的热引起的热岛干扰。 在一个实施例中,温度传感器可以是形成在衬底上的热电偶,热电偶的温度感测部分形成在声学端口上。 在另一个实施例中,温度传感器可以形成在延伸到声学端口中或上方的专用集成电路上。 在另一个实施例中,衬底中的导热通道可以放置在声学端口附近,以使得温度传感器能够经由通道确定环境温度。