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1. 发明授权

US09923324B2 AC line filter and AC-to-DC rectifier module 有权
公开(公告)号：US09923324B2
公开(公告)日：2018-03-20
申请号：US14611193
申请日：2015-01-31
申请人： IXYS Corporation
发明人： Kyoung Wook Seok
IPC分类号： H02M7/00 , H02M7/217 , H02M7/04 , H02M1/00 , H01R31/06 , H02M1/12 , H02M1/44 , H02M7/219 , H01R13/66
CPC分类号： H01R31/065 , H01R13/6675 , H02M1/126 , H02M1/44 , H02M7/219 , H02M2007/2195 , Y02B70/1408
摘要： An AC Line Filter/Rectifier Module (ACLF/RM) has a metal housing and an outward appearance of a conventional AC line filter, but the ACLF/RM includes circuitry that performs both EMI filtering and line filtering as well as very efficient AC-to-DC rectification. Rectification circuitry within the ACLF/RM rectifies an AC voltage signal received onto AC input module terminals and outputs a rectified version of the AC voltage signal onto DC output module terminals. The rectification circuitry includes at least one low forward voltage rectifier, where the low forward voltage rectifier includes a bipolar transistor and a diode. Inductive components perform both EMI filtering and line filtering as well as current splitting required to drive the bipolar transistors of the low forward voltage rectifiers. Due to the use of the low forward voltage rectifiers, the AC-to-DC conversion is more efficient than would be case were a conventional diode bridge rectifier employed.

2. 发明申请

US20170207720A1 AC Line Filter And AC-to-DC Rectifier Module 有权
公开(公告)号：US20170207720A1
公开(公告)日：2017-07-20
申请号：US15475083
申请日：2017-03-30
申请人： IXYS Corporation
发明人： Kyoung Wook Seok
IPC分类号： H02M7/219 , H03H7/01 , H01L21/02 , H02M1/44 , H01L29/66 , H01L21/225
CPC分类号： H02M7/219 , H01L21/02381 , H01L21/02532 , H01L21/2254 , H01L29/66242 , H02M1/126 , H02M1/44 , H02M2007/2195 , H03H7/0115
摘要： An AC line filter module includes AC-to-DC rectification circuitry. The rectification circuitry includes four low forward voltage rectifiers coupled together as two high-side rectifiers and two low-side rectifiers, where each low forward voltage rectifier includes an NPN bipolar transistor and a parallel-connected diode. A current splitting pair of inductors splits a return current so that a portion of the current is supplied to the collector of an NPN bipolar transistor that is on, and so that the remainder of the current is supplied to the base of the transistor that is on. Both low-side rectifiers are driven by these current splitting inductors. A pair of base current return diodes provides base current return paths. Due to the use of NPN bipolar transistors and no PNP bipolar transistors, manufacturing cost is reduced and efficiency is improved as compared to an implementation that uses low forward voltage rectifiers having PNP transistors.

3. 发明授权

US09641065B2 AC line filter and AC-to-DC rectifier module 有权
公开(公告)号：US09641065B2
公开(公告)日：2017-05-02
申请号：US14732688
申请日：2015-06-06
申请人： IXYS Corporation
发明人： Kyoung Wook Seok
IPC分类号： H02M1/44 , H02M1/12 , H02M7/217 , H02M7/219
CPC分类号： H02M7/219 , H01L21/02381 , H01L21/02532 , H01L21/2254 , H01L29/66242 , H02M1/126 , H02M1/44 , H02M2007/2195 , H03H7/0115
摘要： An AC line filter module includes AC-to-DC rectification circuitry. The rectification circuitry includes four low forward voltage rectifiers coupled together as two high-side rectifiers and two low-side rectifiers, where each low forward voltage rectifier includes an NPN bipolar transistor and a parallel-connected diode. A current splitting pair of inductors splits a return current so that a portion of the current is supplied to the collector of an NPN bipolar transistor that is on, and so that the remainder of the current is supplied to the base of the transistor that is on. Both low-side rectifiers are driven by these current splitting inductors. A pair of base current return diodes provides base current return paths. Due to the use of NPN bipolar transistors and no PNP bipolar transistors, manufacturing cost is reduced and efficiency is improved as compared to an implementation that uses low forward voltage rectifiers having PNP transistors.

4. 发明授权

US09042143B2 Low forward voltage rectifier using capacitive current splitting 有权
标题翻译：使用电容电流分流的低正压整流器
公开(公告)号：US09042143B2
公开(公告)日：2015-05-26
申请号：US13900451
申请日：2013-05-22
申请人： IXYS Corporation
发明人： Kyoung Wook Seok
IPC分类号： G05F1/46 , H05K13/00 , H02M3/335 , H02M1/08 , H02M1/00 , H01L27/06
CPC分类号： H02M3/33507 , G05F1/46 , H01L27/0664 , H02M1/083 , H02M3/33576 , H02M2001/0048 , H05K13/00 , Y02B70/1433 , Y02B70/1491 , Y10T29/49117
摘要： A Low Forward Voltage Rectifier (LFVR) circuit includes a bipolar transistor, a parallel diode, and a capacitive current splitting network. The LFVR circuit, when it is performing a rectifying function, conducts the forward current from a first node to a second node provided that the voltage from the first node to the second node is adequately positive. The capacitive current splitting network causes a portion of the forward current to be a base current of the bipolar transistor, thereby biasing the transistor so that the forward current experiences a low forward voltage drop across the transistor. The LFVR circuit sees use in as a rectifier in many different types of switching power converters, including in flyback, Cuk, SEPIC, boost, buck-boost, PFC, half-bridge resonant, and full-bridge resonant converters. Due to the low forward voltage drop across the LFVR, converter efficiency is improved.
摘要翻译：低正向电压整流器（LFVR）电路包括双极晶体管，并联二极管和电容分流网络。当LFVR电路正在执行整流功能时，将正向电流从第一节点传导到第二节点，前提是从第一节点到第二节点的电压是正确的。电容分流网络使正向电流的一部分成为双极晶体管的基极电流，从而偏置晶体管，使得正向电流在晶体管两端经历低的正向压降。 LFVR电路在许多不同类型的开关电源转换器中被用作整流器，包括反激式，Cuk，SEPIC，升压，降压 - 升压，PFC，半桥谐振和全桥谐振转换器。由于LFVR的正向压降较低，转换器效率得到提高。

5. 发明申请

US20140273384A1 POWER TRANSISTOR WITH INCREASED AVALANCHE CURRENT AND ENERGY RATING 审中-公开
标题翻译：功率晶体管具有增加的AVALANCHE电流和能量等级
公开(公告)号：US20140273384A1
公开(公告)日：2014-09-18
申请号：US14290994
申请日：2014-05-30
申请人： IXYS Corporation
发明人： Kyoung Wook Seok
IPC分类号： H01L29/66
CPC分类号： H01L29/66681 , H01L29/0619 , H01L29/1095 , H01L29/41766 , H01L29/66333 , H01L29/66727 , H01L29/7395 , H01L29/7811
摘要： A field-effect transistor involves a drain electrode, a drift region, a body region, a source region, a gate insulator layer, and a gate electrode. The drift region is disposed above the drain electrode. The body region extends down into the drift region from a first upper semiconductor surface. The source region is ladder-shaped and extends down in the body region from a second upper semiconductor surface. The first and second upper semiconductor surfaces are substantially planar and are not coplanar. A first portion of the body region is surrounded laterally by a second portion of the body region. The second portion of the body region and the drift region meet at a body-to-drift boundary. The body-to-drift boundary has a central portion that is non-planar. A gate insulator layer is disposed over the source region and a gate electrode is disposed over the gate insulator.
摘要翻译：场效应晶体管包括漏电极，漂移区，体区，源极区，栅极绝缘体层和栅电极。漂移区设置在漏极上方。身体区域从第一上半导体表面向下延伸到漂移区域。源极区域是梯形的并且在第二上部半导体表面的体区域中向下延伸。第一和第二上半导体表面基本上是平面的并且不共面。身体区域的第一部分被身体区域的第二部分横向包围。身体区域和漂移区域的第二部分在身体到漂移边界处相遇。身体到漂移边界具有非平面的中心部分。栅极绝缘体层设置在源极区上方，并且栅电极设置在栅极绝缘体上方。

6. 发明申请

US20130285210A1 FULL BRIDGE RECTIFIER MODULE 有权
标题翻译：全桥整流器模块
公开(公告)号：US20130285210A1
公开(公告)日：2013-10-31
申请号：US13931599
申请日：2013-06-28
申请人： IXYS Corporation
发明人： Kyoung Wook Seok
IPC分类号： H01L27/06
CPC分类号： H01L25/0655 , H01L23/3107 , H01L23/49562 , H01L23/49575 , H01L23/5386 , H01L23/645 , H01L27/0647 , H01L27/0761 , H01L2224/48091 , H01L2224/48137 , H01L2924/1305 , H01L2924/13091 , H01L2924/30107 , H02M7/003 , H02M7/04 , H01L2924/00014 , H01L2924/00
摘要： A full bridge rectifier includes four bipolar transistors, each of which has an associated parallel diode. A first pair of inductors provides inductive current splitting and thereby provides base current to/from one pair of the bipolar transistors so that the collector-to-emitter voltages of the bipolar transistors are low. A second pair of inductors similarly provides inductive current splitting to provide base current to/from the other pair of bipolar transistors. In one embodiment, all components are provided in a four terminal full bridge rectifier module. The module can be used as a drop-in replacement for a conventional four terminal full bridge diode rectifier. When current flows through the rectifier module, however, the voltage drop across the module is less than one volt. Due to the reduced low voltage drop, power loss in the rectifier module is reduced as compared to power loss in a conventional full bridge diode rectifier.
摘要翻译：全桥整流器包括四个双极晶体管，每个具有相关的并联二极管。第一对电感器提供感应电流分流，从而向一对双极晶体管提供基极电流，从而使双极晶体管的集电极到发射极的电压较低。第二对电感器类似地提供感应电流分离以向/从另一对双极晶体管提供基极电流。在一个实施例中，所有部件都设置在四端子全桥整流器模块中。该模块可用作常规四端子全桥二极管整流器的插入式替代。然而，当电流流过整流器模块时，模块上的电压降小于1伏。由于降低的低压降，与传统的全桥二极管整流器中的功率损耗相比，整流器模块中的功率损耗降低。

7. 发明授权

US10038088B2 Power MOSFET having improved manufacturability, low on-resistance and high breakdown voltage 有权
公开(公告)号：US10038088B2
公开(公告)日：2018-07-31
申请号：US15815391
申请日：2017-11-16
申请人： IXYS Corporation
发明人： Kyoung Wook Seok
IPC分类号： H01L29/78 , H01L29/10 , H01L29/06 , H01L29/08 , H01L23/535 , H01L29/417 , H01L23/482
CPC分类号： H01L29/7811 , H01L23/4824 , H01L23/535 , H01L29/0619 , H01L29/0623 , H01L29/0634 , H01L29/0692 , H01L29/0856 , H01L29/0878 , H01L29/1079 , H01L29/1095 , H01L29/41741 , H01L29/7813 , H05K999/99
摘要： Stripe-shaped surface transistor structures of a power MOSFET are disposed over an array of parallel-extending P type Buried Stripe-Shaped Charge Compensation Regions (BSSCCRs). The power MOSFET has two and only two epitaxial semiconductor layers, and the BSSCCRs are disposed at the interface between these layers. Looping around the area occupied by these parallel-extending BSSCCRs is a P type ring-shaped BSSCCR. At the upper semiconductor surface are disposed three P type surface rings. The inner surface ring and outer surface ring are coupled together by a bridging metal member, but the center surface ring is floating. The bridging metal member is disposed at least in part over the ring-shaped BSSCCR. The MOSFET has a high breakdown voltage, a low RDS(ON), and is acceptable and suitable for manufacture at semiconductor fabrication plants that cannot or typically do not make superjunction MOSFETs.

8. 发明申请

US20170358669A1 Trench IGBT With Waved Floating P-Well Electron Injection 审中-公开
公开(公告)号：US20170358669A1
公开(公告)日：2017-12-14
申请号：US15687545
申请日：2017-08-28
申请人： IXYS Corporation
发明人： Kyoung Wook Seok
IPC分类号： H01L29/739 , H01L29/06 , H01L21/266 , H01L29/10 , H01L29/66
CPC分类号： H01L29/7397 , H01L21/266 , H01L29/0619 , H01L29/0696 , H01L29/1095 , H01L29/66348
摘要： A trench IGBT includes a floating P well and a floating N+ well that extends down into the floating P well. A bottom surface of the floating P well has a novel waved contour so that it has thinner portions and thicker portions. When the IGBT is on, electrons flow from an N+ emitter, vertically through a channel along a trench sidewall, and to an N− type drift layer. Additional electrons flow through the channel but then pass under the trench, through the floating P well to the floating N+ well, and laterally through the floating N+ well. NPN transistors are located at thinner portions of the floating P type well. The NPN transistors inject electrons from the floating N+ type well down into the N− drift layer. The extra electron injection reduces VCE(SAT). The waved contour can be made without adding any masking step to an IGBT manufacturing process.

9. 发明授权

US09837529B1 Power MOSFET having improved manufacturability, low on-resistance and high breakdown voltage 有权
公开(公告)号：US09837529B1
公开(公告)日：2017-12-05
申请号：US15284488
申请日：2016-10-03
申请人： IXYS Corporation
发明人： Kyoung Wook Seok
IPC分类号： H01L29/78 , H01L29/10 , H01L29/06 , H01L29/08 , H01L23/535 , H01L29/417
CPC分类号： H01L29/7811 , H01L23/4824 , H01L23/535 , H01L29/0623 , H01L29/0634 , H01L29/0692 , H01L29/0856 , H01L29/0878 , H01L29/1079 , H01L29/1095 , H01L29/41741 , H01L29/7813 , H05K999/99
摘要： Stripe-shaped surface transistor structures of a power MOSFET are disposed over an array of parallel-extending P type Buried Stripe-Shaped Charge Compensation Regions (BSSCCRs). The power MOSFET has two and only two epitaxial semiconductor layers, and the BSSCCRs are disposed at the interface between these layers. Looping around the area occupied by these parallel-extending BSSCCRs is a P type ring-shaped BSSCCR. At the upper semiconductor surface are disposed three P type surface rings. The inner surface ring and outer surface ring are coupled together by a bridging metal member, but the center surface ring is floating. The bridging metal member is disposed at least in part over the ring-shaped BSSCCR. The MOSFET has a high breakdown voltage, a low RDS(ON), and is acceptable and suitable for manufacture at semiconductor fabrication plants that cannot or typically do not make superjunction MOSFETs.

10. 发明授权

US09780202B2 Trench IGBT with waved floating P-well electron injection 有权
公开(公告)号：US09780202B2
公开(公告)日：2017-10-03
申请号：US14983569
申请日：2015-12-30
申请人： IXYS Corporation
发明人： Kyoung Wook Seok
IPC分类号： H01L29/739 , H01L29/06 , H01L29/10 , H01L29/66 , H01L21/266
CPC分类号： H01L29/7397 , H01L21/266 , H01L29/0619 , H01L29/0696 , H01L29/1095 , H01L29/66348
摘要： A trench IGBT includes a floating P well and a floating N+ well that extends down into the floating P well. A bottom surface of the floating P well has a novel waved contour so that it has thinner portions and thicker portions. When the IGBT is on, electrons flow from an N+ emitter, vertically through a channel along a trench sidewall, and to an N− type drift layer. Additional electrons flow through the channel but then pass under the trench, through the floating P well to the floating N+ well, and laterally through the floating N+ well. NPN transistors are located at thinner portions of the floating P type well. The NPN transistors inject electrons from the floating N+ type well down into the N− drift layer. The extra electron injection reduces VCE(SAT). The waved contour can be made without adding any masking step to an IGBT manufacturing process.

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