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1. 发明申请

US20190333991A1 Insulated Gate Bipolar Transistor Device Having a Fin Structure 审中-公开
公开(公告)号：US20190333991A1
公开(公告)日：2019-10-31
申请号：US16506429
申请日：2019-07-09
申请人： Infineon Technologies AG
发明人： Christian Philipp Sandow , Franz Josef Niedernostheide , Vera van Treek
IPC分类号： H01L29/06 , B82Y10/00 , H01L29/10 , H01L29/423 , H01L29/739
摘要： A transistor device includes a first silicon nanowire array-MOSFET and a second silicon nanowire array-MOSFET integrated with a bulk drift region. The first silicon nanowire array-MOSFET is configured as an n-MOSFET by substantially only accommodating an electron current, and the second silicon nanowire array-MOSFET is configured as a p-MOSFET by substantially only accommodating a hole electron current. A current strength of a current through the first silicon nanowire array-MOSFET caused by electrons is at least 10 times larger than a current through the first silicon nanowire array-MOSFET caused by holes in an on-state of the transistor device. Further embodiments of transistor devices are described.

2. 发明申请

US20140151858A1 INCREASING THE DOPING EFFICIENCY DURING PROTON IRRADIATION 有权
标题翻译：在原子辐照期间提高播种效率
公开(公告)号：US20140151858A1
公开(公告)日：2014-06-05
申请号：US14057671
申请日：2013-10-18
申请人： Infineon Technologies AG
发明人： Hans-Joachim Schulze , Johannes Laven , Franz Josef Niedernostheide , Frank Dieter Pfirsch
IPC分类号： H01L21/265 , H01L29/167
CPC分类号： H01L21/26513 , H01L21/02351 , H01L21/2605 , H01L21/263 , H01L21/324 , H01L21/3242 , H01L29/167 , H01L29/36
摘要： A description is given of a method for doping a semiconductor body, and a semiconductor body produced by such a method. The method comprises irradiating the semiconductor body with protons and irradiating the semiconductor body with electrons. After the process of irradiating with protons and after the process of irradiating with electrons, the semiconductor body is subjected to heat treatment in order to attach the protons to vacancies by means of diffusion.
摘要翻译：给出了用于掺杂半导体本体的方法和通过这种方法制造的半导体本体的描述。该方法包括用质子照射半导体本体并用电子照射半导体体。在用质子照射的过程和用电子照射的过程之后，对半导体体进行热处理，以通过扩散将质子附着到空位。

3. 发明申请

US20180269285A1 Insulated Gate Bipolar Transistor Device Having a Fin Structure 审中-公开
公开(公告)号：US20180269285A1
公开(公告)日：2018-09-20
申请号：US15979333
申请日：2018-05-14
申请人： Infineon Technologies AG
发明人： Christian Philipp Sandow , Franz Josef Niedernostheide , Vera van Treek
IPC分类号： H01L29/06 , H01L29/739 , H01L29/423 , B82Y10/00 , H01L29/10
CPC分类号： H01L29/0676 , B82Y10/00 , H01L29/0673 , H01L29/1095 , H01L29/42356 , H01L29/7396
摘要： A transistor device includes a first silicon nanowire array-MOSFET and a second silicon nanowire array-MOSFET integrated with a bulk drift region. The first silicon nanowire array-MOSFET is configured as an n-MOSFET by substantially only accommodating an electron current, and the second silicon nanowire array-MOSFET is configured as a p-MOSFET by substantially only accommodating a hole electron current. A current strength of a current through the first silicon nanowire array-MOSFET caused by electrons is at least 10 times larger than a current through the first silicon nanowire array-MOSFET caused by holes in an on-state of the transistor device. Further embodiments of transistor devices are described.

4. 发明授权

US09412824B2 Semiconductor component having a dopant region formed by a dopant composed of an oxygen/vacancy complex 有权
标题翻译：具有由氧/空位复合体构成的掺杂剂形成的掺杂剂区域的半导体元件
公开(公告)号：US09412824B2
公开(公告)日：2016-08-09
申请号：US14480705
申请日：2014-09-09
申请人： Infineon Technologies AG
发明人： Thomas Neidhart , Franz Josef Niedernostheide , Hans-Joachim Schulze , Werner Schustereder , Alexander Susiti
IPC分类号： H01L29/861 , H01L29/167 , H01L29/32 , H01L29/36 , H01L29/06 , H01L29/739 , H01L29/78 , H01L21/265
CPC分类号： H01L29/167 , H01L21/265 , H01L21/26506 , H01L29/0603 , H01L29/32 , H01L29/36 , H01L29/7393 , H01L29/7801 , H01L29/861
摘要： A semiconductor component includes a semiconductor body having a first side and a second side opposite the first side. In the semiconductor body, a dopant region is formed by a dopant composed of an oxygen complex. The dopant region extends over a section L having a length of at least 10 μm along a direction from the first side to the second side. The dopant region has an oxygen concentration in a range of 1×1017 cm−3 to 5×1017 cm−3 over the section L.
摘要翻译：半导体部件包括具有第一侧和与第一侧相对的第二侧的半导体本体。在半导体本体中，由氧络合物构成的掺杂剂形成掺杂剂区域。掺杂剂区域沿着从第一侧到第二侧的方向具有至少10μm的长度的部分L延伸。掺杂剂区域在部分L上的氧浓度范围为1×1017cm-3至5×1017cm-3。

5. 发明申请

US20150303260A1 Vertical Semiconductor Device 审中-公开
标题翻译：立式半导体器件
公开(公告)号：US20150303260A1
公开(公告)日：2015-10-22
申请号：US14679514
申请日：2015-04-06
申请人： Infineon Technologies AG
发明人： Franz Josef Niedernostheide , Manfred Pfaffenlehner , Hans-Joachim Schulze , Holger Schulze , Frank Umbach , Christoph Weiss
IPC分类号： H01L29/06 , H01L29/78 , H01L29/861 , H01L21/283 , H01L29/66 , H01L23/31 , H01L21/56 , H01L29/739 , H01L29/40
CPC分类号： H01L29/0696 , H01L23/3157 , H01L29/0615 , H01L29/0619 , H01L29/0638 , H01L29/0834 , H01L29/1095 , H01L29/1608 , H01L29/20 , H01L29/2003 , H01L29/404 , H01L29/66128 , H01L29/66333 , H01L29/6634 , H01L29/66712 , H01L29/66727 , H01L29/7395 , H01L29/7396 , H01L29/7811 , H01L29/8611 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor body includes first and second opposing surfaces, an edge extending in a vertical direction substantially perpendicular to the first surface, an active area, a peripheral area arranged in a horizontal direction substantially parallel to the first surface between the active area and edge, and a pn-junction extending from the active area into the peripheral area. In the peripheral area the semiconductor device further includes a first conductive region arranged next to the first surface, a second conductive region arranged next to the first surface, and arranged in the horizontal direction between the first conductive region and edge, and a passivation structure including a first portion at least partly covering the first conductive region, a second portion at least partly covering the second conductive region. The first portion has a different layer composition than the second portion and/or a thickness which differs from the thickness of the second portion.
摘要翻译：半导体本体包括第一和第二相对表面，沿基本上垂直于第一表面的垂直方向延伸的边缘，有效区域，沿着基本上平行于有效区域和边缘之间的第一表面的水平方向布置的外围区域，以及从有源区延伸到周边区域的pn结。在外围区域中，半导体器件还包括邻近第一表面布置的第一导电区域，邻近第一表面设置并沿第一导电区域和边缘之间的水平方向布置的第二导电区域，以及包括至少部分地覆盖所述第一导电区域的第一部分，至少部分地覆盖所述第二导电区域的第二部分。第一部分具有不同于第二部分的层组成和/或与第二部分的厚度不同的厚度。

6. 发明授权

US11038016B2 Insulated gate bipolar transistor device having a fin structure 有权
公开(公告)号：US11038016B2
公开(公告)日：2021-06-15
申请号：US16929637
申请日：2020-07-15
申请人： Infineon Technologies AG
发明人： Christian Philipp Sandow , Franz Josef Niedernostheide , Vera van Treek
IPC分类号： H01L29/06 , H01L29/10 , B82Y10/00 , H01L29/423 , H01L29/739
摘要： A transistor device includes a first silicon nanowire array-MOSFET and a second silicon nanowire array-MOSFET integrated with a bulk drift region. The first silicon nanowire array-MOSFET is configured as an n-MOSFET by substantially only accommodating an electron current, and the second silicon nanowire array-MOSFET is configured as a p-MOSFET by substantially only accommodating a hole electron current. A current strength of a current through the first silicon nanowire array-MOSFET caused by electrons is at least 10 times larger than a current through the first silicon nanowire array-MOSFET caused by holes in an on-state of the transistor device. Further embodiments of transistor devices are described.

7. 发明授权

US10748995B2 Insulated gate bipolar Transistor device having a fin structure 有权
公开(公告)号：US10748995B2
公开(公告)日：2020-08-18
申请号：US16506429
申请日：2019-07-09
申请人： Infineon Technologies AG
发明人： Christian Philipp Sandow , Franz Josef Niedernostheide , Vera van Treek
IPC分类号： H01L29/06 , H01L29/10 , B82Y10/00 , H01L29/423 , H01L29/739
摘要： A transistor device includes a first silicon nanowire array-MOSFET and a second silicon nanowire array-MOSFET integrated with a bulk drift region. The first silicon nanowire array-MOSFET is configured as an n-MOSFET by substantially only accommodating an electron current, and the second silicon nanowire array-MOSFET is configured as a p-MOSFET by substantially only accommodating a hole electron current. A current strength of a current through the first silicon nanowire array-MOSFET caused by electrons is at least 10 times larger than a current through the first silicon nanowire array-MOSFET caused by holes in an on-state of the transistor device. Further embodiments of transistor devices are described.

8. 发明授权

US09978837B2 Insulated gate bipolar transistor device having a fin structure 有权
公开(公告)号：US09978837B2
公开(公告)日：2018-05-22
申请号：US15370989
申请日：2016-12-06
申请人： Infineon Technologies AG
发明人： Christian Philipp Sandow , Franz Josef Niedernostheide , Vera van Treek
IPC分类号： H01L29/06 , H01L29/739 , H01L29/423 , H01L29/10 , B82Y10/00
CPC分类号： H01L29/0676 , B82Y10/00 , H01L29/0673 , H01L29/1095 , H01L29/42356 , H01L29/7396
摘要： An insulated gate bipolar transistor device includes a semiconductor substrate having a drift region of an insulated gate bipolar transistor structure, a first fin structure starting from the drift region of the semiconductor substrate and extending orthogonal to a main surface of the semiconductor substrate, and a first gate structure of the insulated gate bipolar transistor structure extending alma at least a part of the first fin structure.

9. 发明授权

US09525029B2 Insulated gate bipolar transistor device, semiconductor device and method for forming said devices 有权
标题翻译：绝缘栅双极晶体管器件，半导体器件和用于形成所述器件的方法
公开(公告)号：US09525029B2
公开(公告)日：2016-12-20
申请号：US14737984
申请日：2015-06-12
申请人： Infineon Technologies AG
发明人： Christian Philipp Sandow , Franz Josef Niedernostheide , Vera van Treek
IPC分类号： H01L29/739 , H01L29/10 , H01L29/06 , H01L29/423
CPC分类号： H01L29/0676 , B82Y10/00 , H01L29/0673 , H01L29/1095 , H01L29/42356 , H01L29/7396
摘要： An insulated gate bipolar transistor device includes a semiconductor substrate having a drift region of an insulated gate bipolar transistor structure. Further, the insulated gate bipolar transistor device includes a first nanowire structure and a first gate structure. The first nanowire structure of the insulated gate bipolar transistor structure is connected to the drift region, and the first gate structure of the insulated gate bipolar transistor structure extends along at least a part of the first nanowire structure.
摘要翻译：绝缘栅双极晶体管器件包括具有绝缘栅双极晶体管结构的漂移区的半导体衬底。此外，绝缘栅双极晶体管器件包括第一纳米线结构和第一栅极结构。绝缘栅双极晶体管结构的第一纳米线结构连接到漂移区，绝缘栅双极晶体管结构的第一栅极结构沿第一纳米线结构的至少一部分延伸。

10. 发明申请

US20160284803A1 Bipolar Transistor Device With an Emitter Having Two Types of Emitter Regions 有权
标题翻译：具有两种发射极区域的发射体的双极晶体管器件
公开(公告)号：US20160284803A1
公开(公告)日：2016-09-29
申请号：US15081220
申请日：2016-03-25
申请人： Infineon Technologies AG
发明人： Roman Baburske , Christian Jaeger , Franz Josef Niedernostheide , Hans-Joachim Schulze , Antonio Vellei
IPC分类号： H01L29/10 , H01L29/66 , H01L21/268 , H01L29/739
CPC分类号： H01L21/268 , H01L21/0465 , H01L29/0834 , H01L29/36 , H01L29/66348 , H01L29/7397 , H01L29/861
摘要： Disclosed is a bipolar semiconductor device, comprising a semiconductor body having a first surface; and a base region of a first doping type and a first emitter region in the semiconductor body, wherein the first emitter region adjoins the first surface and comprises a plurality of first type emitter regions of a second doping type complementary to the first doping type, a plurality of second type emitter regions of the second doping type, a plurality of third type emitter regions of the first doping type, and a recombination region comprising recombination centers, wherein the first type emitter regions and the second type emitter regions extend from the first surface into the semiconductor body, wherein the first type emitter regions have a higher doping concentration and extend deeper into the semiconductor body from the first surface than the second type emitter regions, wherein the third type emitter regions adjoin the first type emitter regions and the second type emitter regions, and wherein the recombination region is located at least in the first type emitter regions and the third type emitter regions.
摘要翻译：公开了一种双极半导体器件，包括具有第一表面的半导体本体; 以及半导体主体中的第一掺杂类型和第一发射极区域的基极区域，其中第一发射极区域与第一表面相邻并且包括与第一掺杂类型互补的多个第一掺杂类型的第一类型发射极区域，多个第二掺杂类型的第二类型发射极区域，第一掺杂类型的多个第三类型发射极区域和包含复合中心的复合区域，其中第一类型发射区域和第二类型发射极区域从第一表面其中所述第一类型发射极区域具有较高的掺杂浓度并且从所述第一表面比所述第二类型发射极区域更深地延伸到所述半导体本体中，其中所述第三类型发射极区域与所述第一类型发射极区域和所述第二类型发射极区域邻接发射极区域，并且其中所述复合区域至少位于所述第一类型发射极区域中第三类发射极区域。

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