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1. 发明授权

US09791881B2 Self-driven synchronous rectification for a power converter 有权
公开(公告)号：US09791881B2
公开(公告)日：2017-10-17
申请号：US14338191
申请日：2014-07-22
申请人： Infineon Technologies Austria AG
发明人： Giuseppe Bernacchia , Olivier Guillemant
IPC分类号： G05F3/02 , G05F3/24 , G05F3/10 , H02M3/335 , H03K17/082
CPC分类号： G05F3/24 , G05F3/10 , H02M3/33546 , H02M3/33576 , H02M3/33592 , H03K17/0822 , H03K2217/0027 , Y02B70/1475
摘要： A power converter with an isolated topology may include a power transistor, a sense transistor, and a read-out circuit. The sense transistor may be arranged in a current mirror configuration with the power transistor such that the gate terminal of the sense transistor is coupled to the gate terminal of the power transistor and the first drain/source terminal of the sense transistor is coupled to the first drain/source terminal of the power transistor. The read-out circuit may be coupled to the second drain/source terminal of the power transistor and the second drain source/terminal of the sense transistor. The read-out circuit may be arranged to cause a voltage at the second drain/source terminal of the sense transistor to be substantially the same as a voltage at the second drain/source terminal of the power transistor.

2. 发明申请

US20230055891A1 Transistor Device and Method of Fabricating a Transistor Device 有权
公开(公告)号：US20230055891A1
公开(公告)日：2023-02-23
申请号：US17796133
申请日：2020-02-07
申请人： Infineon Technologies Austria AG
发明人： Oliver Blank , Cesar Augusto Braz , Yan Gao , Olivier Guillemant , Franz Hirler , David Laforet , Peter Lagger , Cédric Ouvrard , Elias Pree , Li Juin Yip
IPC分类号： H01L29/78 , H01L29/06 , H01L29/66 , H01L29/10 , H01L29/40 , H01L27/088 , H01L21/8234
摘要： In an embodiment, a transistor device comprises a semiconductor body comprising a plurality of transistor cells comprising a drift region of a first conductivity type, a body region of a second conductivity type forming a first pn junction with the drift region, the second conductivity type opposing the first conductivity type, a source region of the first conductivity type forming a second pn junction with the body region, a columnar field plate trench extending into a major surface of a semiconductor body and comprising a columnar field plate and a gate trench structure extending into the major surface of the semiconductor body and comprising a gate electrode. At least one of the depth and doping level of the body region locally varies within the transistor cell to improve VGSTH homogeneity within the transistor cell.

3. 发明授权

US10573731B2 Semiconductor transistor and method for forming the semiconductor transistor 有权
公开(公告)号：US10573731B2
公开(公告)日：2020-02-25
申请号：US15458173
申请日：2017-03-14
申请人： Infineon Technologies Austria AG
发明人： Li Juin Yip , Cesar Augusto Braz , Olivier Guillemant , David Laforet , Cedric Ouvrard
IPC分类号： H01L29/739 , H01L29/06 , H01L29/40 , H01L29/423 , H01L21/306 , H01L23/535 , H01L29/66
摘要： A vertical semiconductor field-effect transistor includes a semiconductor body having a front side, and a field electrode trench extending from the front side into the semiconductor body. The field electrode trench includes a field electrode and a field dielectric arranged between the field electrode and the semiconductor body. The vertical semiconductor field-effect transistor further includes a gate electrode trench arranged next to the field electrode trench, extending from the front side into the semiconductor body, and having two electrodes which are separated from each other and the semiconductor body. A front side metallization is arranged on the front side and in contact with the field electrode and at most one of the two electrodes.

4. 发明申请

US20160028319A1 SELF-DRIVEN SYNCHRONOUS RECTIFICATION FOR A POWER CONVERTER 有权
标题翻译：用于电源转换器的自同步同步整流
公开(公告)号：US20160028319A1
公开(公告)日：2016-01-28
申请号：US14338191
申请日：2014-07-22
申请人： Infineon Technologies Austria AG
发明人： Giuseppe Bernacchia , Olivier Guillemant
IPC分类号： H02M3/335
CPC分类号： G05F3/24 , G05F3/10 , H02M3/33546 , H02M3/33576 , H02M3/33592 , H03K17/0822 , H03K2217/0027 , Y02B70/1475
摘要： A power converter with an isolated topology may include a power transistor, a sense transistor, and a read-out circuit. The sense transistor may be arranged in a current mirror configuration with the power transistor such that the gate terminal of the sense transistor is coupled to the gate terminal of the power transistor and the first drain/source terminal of the sense transistor is coupled to the first drain/source terminal of the power transistor. The read-out circuit may be coupled to the second drain/source terminal of the power transistor and the second drain source/terminal of the sense transistor. The read-out circuit may be arranged to cause a voltage at the second drain/source terminal of the sense transistor to be substantially the same as a voltage at the second drain/source terminal of the power transistor.
摘要翻译：具有隔离拓扑的功率转换器可以包括功率晶体管，检测晶体管和读出电路。感测晶体管可以以电流镜配置与功率晶体管配置，使得感测晶体管的栅极端子耦合到功率晶体管的栅极端子，并且感测晶体管的第一漏极/源极端子耦合到第一功率晶体管的漏极/源极端子。读出电路可以耦合到功率晶体管的第二漏极/源极端子和感测晶体管的第二漏极源极/端子。读出电路可以被布置成使得感测晶体管的第二漏极/源极端子处的电压与功率晶体管的第二漏极/源极端子处的电压基本相同。

5. 发明申请

US20190006357A1 Power Semiconductor Device Having Different Gate Crossings, and Method for Manufacturing Thereof 审中-公开
公开(公告)号：US20190006357A1
公开(公告)日：2019-01-03
申请号：US16020133
申请日：2018-06-27
申请人： Infineon Technologies Austria AG
发明人： Cedric Ouvrard , Cesar Augusto Braz , Olivier Guillemant , David Laforet , Gerhard Noebauer , Li Juin Yip
IPC分类号： H01L27/088 , H01L29/06 , H01L29/40 , H01L29/78 , H01L29/423 , H01L29/739 , H01L29/08 , H01L21/8234
摘要： A power semiconductor device includes a semiconductor substrate having a first side. A plurality of active transistor cells is formed in an active area of the semiconductor substrate. Each of the plurality of active transistor cells includes a spicular trench which extends from the first side into the semiconductor substrate and has a field electrode. A gate electrode structure has a plurality of intersecting gate trenches running between the spicular trenches. The intersecting gate trenches form gate crossing regions of different shape when seen in a plan projection onto the first side of the power semiconductor device.

6. 发明申请

US20170271491A1 Semiconductor Transistor and Method for Forming the Semiconductor Transistor 审中-公开
公开(公告)号：US20170271491A1
公开(公告)日：2017-09-21
申请号：US15458173
申请日：2017-03-14
申请人： Infineon Technologies Austria AG
发明人： Li Juin Yip , Cesar Augusto Braz , Olivier Guillemant , David Laforet , Cedric Ouvrard
IPC分类号： H01L29/739 , H01L21/306 , H01L29/66 , H01L29/423 , H01L23/535
CPC分类号： H01L29/7397 , H01L21/30604 , H01L23/535 , H01L29/0696 , H01L29/407 , H01L29/4236 , H01L29/4238 , H01L29/66348
摘要： A vertical semiconductor field-effect transistor includes a semiconductor body having a front side, and a field electrode trench extending from the front side into the semiconductor body The field electrode trench includes a field electrode and a field dielectric arranged between the field electrode and the semiconductor body. The vertical semiconductor field-effect transistor further includes a gate electrode trench arranged next to the field electrode trench, extending from the front side into the semiconductor body, and having two electrodes which are separated from each other and the semiconductor body. A front side metallization is arranged on the front side and in contact with the field electrode and at most one of the two electrodes.

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