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1. 发明授权

US11575041B2 Transistor arrangement with a load transistor and a sense transistor 有权
公开(公告)号：US11575041B2
公开(公告)日：2023-02-07
申请号：US17104216
申请日：2020-11-25
申请人： Infineon Technologies Austria AG
发明人： Gerhard Noebauer
IPC分类号： H01L29/78 , H01L29/40 , H01L29/06 , H01L29/08 , G01R19/00
摘要： A method of current detection includes providing a transistor arrangement which comprises a drift and drain region arranged in a semiconductor body and each connected to a drain node, a plurality of load transistor cells each having a source region integrated in a first region of the semiconductor body, a plurality of sense transistor cells each having a source region integrated in a second region of the semiconductor body, a first source node electrically connected to the source region of each of the plurality of the load transistor cells via a first source conductor, and a second source node electrically connected to the source region of each of the plurality of the sense transistor cells via a second source conductor; and detecting a first current flowing between the drain node and the first source node of the transistor arrangement, wherein detecting the first current includes measuring a second current flowing between the drain node and the second source node of the transistor arrangement.

2. 发明授权

US11574904B2 Semiconductor device having a main transistor, a sense transistor and at least one bypass diode structure 有权
公开(公告)号：US11574904B2
公开(公告)日：2023-02-07
申请号：US16866918
申请日：2020-05-05
申请人： Infineon Technologies Austria AG
发明人： Gerhard Noebauer , Florian Gasser
IPC分类号： H01L21/00 , H01L27/06 , H01L29/06 , H01L29/78
摘要： In an embodiment, a semiconductor device is provided that includes a main transistor having a load path, a sense transistor configured to sense a main current flowing in the load path of the main transistor, and at least one bypass diode structure configured to protect the sense transistor. The at least one bypass diode structure is electrically coupled in parallel with the sense transistor.

3. 发明授权

US11133391B2 Transistor device 有权
公开(公告)号：US11133391B2
公开(公告)日：2021-09-28
申请号：US16572031
申请日：2019-09-16
申请人： Infineon Technologies Austria AG
发明人： Franz Hirler , Cesar Augusto Braz , Gerhard Noebauer , Martin Henning Vielemeyer
IPC分类号： H01L29/40 , H01L29/66 , H01L29/423 , H01L29/78
摘要： A transistor device includes, in a semiconductor body, a drift region, a body region, and a source region separated from the drift region by the body region and connected to a source node. The transistor device further includes a gate electrode dielectrically insulated from the body region by a gate dielectric, and a field electrode structure. The field electrode structure includes: a first field electrode connected to the source node and dielectrically insulated from the drift region by a first field electrode dielectric; a second field electrode dielectrically insulated from the drift region by a second field electrode dielectric; and a coupling circuit connected between the second field electrode and the source node and configured to connect the second field electrode to the source node dependent on a voltage between the source node and the second field electrode.

4. 发明申请

US20210183948A1 Semiconductor Switch Element and Method of Manufacturing the Same 有权
公开(公告)号：US20210183948A1
公开(公告)日：2021-06-17
申请号：US17117576
申请日：2020-12-10
申请人： Infineon Technologies Austria AG
发明人： Sylvain Leomant , Gerhard Noebauer , Thomas Oszinda , Christian Gruber , Sergey Ananiev
IPC分类号： H01L27/24 , H01L29/40 , H01L29/66 , H01L21/768
摘要： The application relates to a semiconductor switch element, including: a first vertical transistor device formed in a substrate and having a source region formed on a first side of the substrate and a drain region formed on a second side of the substrate vertically opposite to the first side; a second vertical transistor device formed laterally aside the first vertical transistor device in the same substrate and having a source region formed on the first side of the substrate and a drain region formed on the second side of the substrate; a conductive element arranged on the second side of the substrate and electrically connecting the drain regions of the vertical transistor devices; and a trench extending vertically into the substrate at the second side of the substrate, wherein at least a part of the conductive element is arranged in the trench.

5. 发明授权

US10224912B2 Half bridge circuit, method of operating a half bridge circuit and a half bridge circuit package 有权
公开(公告)号：US10224912B2
公开(公告)日：2019-03-05
申请号：US15477415
申请日：2017-04-03
申请人： Infineon Technologies Austria AG
发明人： Ralf Otremba , Josef Hoeglauer , Gerhard Noebauer
IPC分类号： H03K5/08 , H01L23/00 , H03K17/567 , H03K17/0814
摘要： A half bridge circuit includes an input connection configured to supply an electric input, an output connection configured to supply an electric output to a load to be connected to the output connection, a switch and a diode arranged between the input connection and the output connection and a voltage limiting inductance arranged in series between the switch and the diode. The voltage limiting inductance is configured to limit, upon switching the switch, a maximum voltage across the switch to below a breakdown voltage of the switch. A corresponding method of operating the half bridge circuit and package are also described.

6. 发明申请

US20190035915A1 Transistor Device with a Rectifier Element Between a Field Electrode and a Source Electrode 审中-公开
公开(公告)号：US20190035915A1
公开(公告)日：2019-01-31
申请号：US16045335
申请日：2018-07-25
申请人： Infineon Technologies Austria AG
发明人： Ralf Siemieniec , Robert Haase , Gerhard Noebauer , Martin Poelzl
IPC分类号： H01L29/66 , H01L29/78
摘要： Disclosed is a transistor device. The transistor device includes: in a semiconductor body, a drift region, a body region adjoining the drift region, and a source region separated from the drift region by the body region; a gate electrode dielectrically insulated from the body region by a gate dielectric; a source electrode electrically connected to the source region; at least one field electrode dielectrically insulated from the drift region by a field electrode dielectric; and a rectifier element coupled between the source electrode and the field electrode. The field electrode and the field electrode dielectric are arranged in a first trench that extends from a first surface of the semiconductor body into the semiconductor body. The rectifier element is integrated in the first trench in a rectifier region that is adjacent at least one of the source region and the body region.

7. 发明授权

US09537400B2 Switching converter with dead time between switching of switches 有权
标题翻译：开关转换器在切换开关之间具有死区时间
公开(公告)号：US09537400B2
公开(公告)日：2017-01-03
申请号：US14473852
申请日：2014-08-29
申请人： Infineon Technologies Austria AG
发明人： Gerhard Noebauer
IPC分类号： H02M3/158 , H02M1/38 , H02M1/00
CPC分类号： H02M3/1588 , H02M1/38 , H02M2001/0009 , Y02B70/1466
摘要： A device and method for operating a switching power converter are disclosed. In an embodiment a circuit includes a switching power converter having a half bridge including a high-side semiconductor switch connected to a low-side semiconductor switch and an inductor coupled to a half-bridge output node. The circuit further includes a control circuit configured to generate drive signals to switch the high-side semiconductor switch and the low-side semiconductor switch on and off, wherein the drive signals are generated to ensure a dead time between a switch-off of the low-side switch and a subsequent switch-on of the high side switch, and wherein the dead time is set to a first value, when an inductor current is negative at a time of switching, and the dead time is set to a second value, which is lower than the first value, when the inductor current is positive at the time of switching.
摘要翻译：公开了一种用于操作开关电源转换器的装置和方法。在一个实施例中，电路包括具有半桥的开关功率转换器，该半桥包括连接到低侧半导体开关的高侧半导体开关和耦合到半桥输出节点的电感器。该电路还包括控制电路，其被配置为产生驱动信号以切换高侧半导体开关和低侧半导体开关的导通和截止，其中产生驱动信号以确保低电平的断开之间的死区时间并且其中当切换时电感器电流为负时将死区时间设置为第一值，并且将死区时间设置为第二值，当电感电流在切换时为正时，该值低于第一值。

8. 发明申请

US20140332877A1 Semiconductor Device 有权
标题翻译：半导体器件
公开(公告)号：US20140332877A1
公开(公告)日：2014-11-13
申请号：US14249505
申请日：2014-04-10
申请人： Infineon Technologies Austria AG
发明人： Gerhard Noebauer , Christoph Kadow , Donald Dibra , Robert Illing
IPC分类号： H01L27/02
CPC分类号： H01L27/0251
摘要： A switching component includes a control element and an integrated circuit. The integrated circuit includes a first transistor element and a second transistor element electrically connected in parallel to the first transistor element. The first transistor element includes first transistors, gate electrodes of which are disposed in first trenches in a first main surface of a semiconductor substrate. The second transistor element includes second transistors, gate electrodes of which are disposed in second trenches in the first main surface, and a second gate conductive line in contact with the gate electrodes in the second trenches. The control element is configured to control a potential applied to the second gate conductive line.
摘要翻译：开关部件包括控制元件和集成电路。集成电路包括与第一晶体管元件并联电连接的第一晶体管元件和第二晶体管元件。第一晶体管元件包括第一晶体管，其栅电极设置在半导体衬底的第一主表面中的第一沟槽中。第二晶体管元件包括第二晶体管，栅电极设置在第一主表面中的第二沟槽中，第二栅极导线与第二沟槽中的栅电极接触。控制元件被配置为控制施加到第二栅极导电线的电位。

9. 发明申请

US20220254703A1 Semiconductor Device 有权
公开(公告)号：US20220254703A1
公开(公告)日：2022-08-11
申请号：US17620472
申请日：2020-04-29
申请人： Infineon Technologies Austria AG
发明人： Elvir Kahrimanovic , Gerhard Noebauer , Oliver Blank , Alessandro Ferrara
IPC分类号： H01L23/495 , H01L29/417 , H01L23/00
摘要： In some embodiments, a semiconductor device comprises a semiconductor die comprising a vertical transistor device having a source electrode, a drain electrode and a gate electrode, the semiconductor die having a first surface and a second surface opposing the first surface. A first metallization structure is located on the first surface and comprises at least one source pad coupled to the source electrode, at least one drain pad coupled to the drain electrode and at least one gate pad coupled to the gate electrode. A second metallization structure is located on the second surface and comprises a conductive structure and an electrically insulating layer and forms an outermost surface of the semiconductor device. The outermost surface of the second metallization structure is electrically insulated from the semiconductor die by the electrically insulating layer.

10. 发明申请

US20220115314A1 SEMICONDUCTOR DEVICE HAVING A METALLIZATION STRUCTURE 有权
公开(公告)号：US20220115314A1
公开(公告)日：2022-04-14
申请号：US17556247
申请日：2021-12-20
申请人： Infineon Technologies Austria AG
发明人： Oliver Blank , Gerhard Noebauer
IPC分类号： H01L23/498 , H01L29/417 , H01L29/43
摘要： In some embodiments, a semiconductor device includes a semiconductor die including a vertical transistor device having a source electrode, a drain electrode and a gate electrode, the semiconductor die having a first surface and a metallization structure. The metallization structure includes a first conductive layer above the first surface, a first insulating layer above the first conductive layer, a second conductive layer above the first insulating layer, a second insulating layer above the second conductive layer and a third conductive layer above the second insulting layer. The third conductive layer includes at least one source pad electrically coupled to the source electrode, at least one drain pad electrically coupled to the drain electrode and at least one gate pad electrically coupled to the gate electrode.

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