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1. 发明授权

US07847606B2 High precision power-on-reset circuit with an adjustable trigger level 有权
标题翻译：具有可调触发电平的高精度上电复位电路
公开(公告)号：US07847606B2
公开(公告)日：2010-12-07
申请号：US12413193
申请日：2009-03-27
申请人： Ingo Hehemann , Kwet Chai , Michael Wendt
发明人： Ingo Hehemann , Kwet Chai , Michael Wendt
IPC分类号： H03L7/00
CPC分类号： H03K17/223
摘要： An electronic device comprising circuitry for providing a Power-on-Reset (POR) signal as a function of a supply voltage level of the circuitry. The circuitry comprises a Vbe-cell or a Vgs-cell comprising a first current path including a first transistor and a second current path including a second transistor. Each transistor has a control terminal for controlling a first current in the first current path and a second current in the second current path, wherein a control voltage level is commonly applied to the control terminals of the first and the second transistor. The control voltage level is derived from the current supply voltage level of the circuitry, and the circuitry further comprises a POR output node for providing a POR output signal, which changes from a first state to a second state in response to the ratio of the magnitudes of the first current and the second current.
摘要翻译：一种电子设备，包括用于提供作为电路的电源电压电平的函数的上电复位（POR）信号的电路。电路包括Vbe单元或Vgs单元，其包括包括第一晶体管的第一电流路径和包括第二晶体管的第二电流路径。每个晶体管具有用于控制第一电流路径中的第一电流和第二电流路径中的第二电流的控制端子，其中通常将控制电压电平施加到第一和第二晶体管的控制端子。控制电压电平由电路的当前电源电压电平得出，并且电路还包括用于提供POR输出信号的POR输出节点，POR输出信号响应于第一状态与第二状态的比值而从第一状态改变到第二状态的第一个当前和第二个电流。

2. 发明申请

US20090267682A1 HIGH PRECISION POWER-ON-RESET CIRCUIT WITH AN ADJUSTABLE TRIGGER LEVEL 有权
标题翻译：具有可调节触发电平的高精度上电复位电路
公开(公告)号：US20090267682A1
公开(公告)日：2009-10-29
申请号：US12413193
申请日：2009-03-27
申请人： Ingo Hehemann , Kwet Chai , Michael Wendt
发明人： Ingo Hehemann , Kwet Chai , Michael Wendt
IPC分类号： G11C5/14
CPC分类号： H03K17/223
摘要： An electronic device comprising circuitry for providing a Power-on-Reset (POR) signal as a function of a supply voltage level of the circuitry. The circuitry comprises a Vbe-cell or a Vgs-cell comprising a first current path including a first transistor and a second current path including a second transistor. Each transistor has a control terminal for controlling a first current in the first current path and a second current in the second current path, wherein a control voltage level is commonly applied to the control terminals of the first and the second transistor. The control voltage level is derived from the current supply voltage level of the circuitry, and the circuitry further comprises a POR output node for providing a POR output signal, which changes from a first state to a second state in response to the ratio of the magnitudes of the first current and the second current.
摘要翻译：一种电子设备，包括用于提供作为电路的电源电压电平的函数的上电复位（POR）信号的电路。电路包括Vbe单元或Vgs单元，其包括包括第一晶体管的第一电流路径和包括第二晶体管的第二电流路径。每个晶体管具有用于控制第一电流路径中的第一电流和第二电流路径中的第二电流的控制端子，其中通常将控制电压电平施加到第一和第二晶体管的控制端子。控制电压电平由电路的当前电源电压电平得出，并且电路还包括用于提供POR输出信号的POR输出节点，POR输出信号响应于第一状态与第二状态的比值而从第一状态改变到第二状态的第一个当前和第二个电流。

3. 发明申请

US20110168892A1 Pixel Implemented Current Amplifier 审中-公开
标题翻译：像素实现电流放大器
公开(公告)号：US20110168892A1
公开(公告)日：2011-07-14
申请号：US11813220
申请日：2005-12-19
申请人： Roger Steadman , Gereon Vogtmeier , Ingo Hehemann , Salah Eddine Ibnou Quossai , Erol Oezkan , Armin Kemna
发明人： Roger Steadman , Gereon Vogtmeier , Ingo Hehemann , Salah Eddine Ibnou Quossai , Erol Oezkan , Armin Kemna
IPC分类号： G01J1/42
CPC分类号： G01T1/2928 , H04N5/32 , H04N5/3745
摘要： The present invention provides a radiation sensor featuring a plurality of individual sensor elements, e.g. pixels, each of which having a radiation detection portion that is adapted to generate an electric current in response to impingement of electromagnetic radiation and a current amplifier for amplifying the photoelectric current generated by the radiation detection portion. Current amplification is therefore performed locally within each pixel of the radiation sensor itself. This local current amplification effectively allows to increase sensitivity and response of the radiation sensor and therefore enables implementation of the radiation sensor on the basis of CMOS technology. By means of the current amplification, the radiation sensor can be adapted for read-out by means of read-out devices and signal processing modules featuring distinct input specifications Further, a bias current required by the pixel implemented current amplifier is reproduced within each pixel and coupled to consecutive or adjacently arranged sensor elements or pixel, thereby providing a cascaded bias current regeneration and bias current distribution scheme.
摘要翻译：本发明提供了一种辐射传感器，其特征在于多个单独的传感器元件，例如像素，每个具有适于响应于电磁辐射的冲击而产生电流的辐射检测部分和用于放大由辐射检测部分产生的光电流的电流放大器。因此，电流放大在辐射传感器本身的每个像素内本地进行。这种局部电流放大有助于增加辐射传感器的灵敏度和响应，因此可以在CMOS技术的基础上实现辐射传感器。通过电流放大，辐射传感器可以通过读出装置和具有不同输入规格的信号处理模块进行读出。此外，像素实现的电流放大器所需的偏置电流在每个像素内被再现，耦合到连续或相邻布置的传感器元件或像素，从而提供级联的偏置电流再生和偏置电流分配方案。

4. 发明申请

US20090153198A1 LOW-LEAKAGE SWITCH FOR SAMPLE AND HOLD 有权
标题翻译：用于样品和保持的低泄漏开关
公开(公告)号：US20090153198A1
公开(公告)日：2009-06-18
申请号：US12249509
申请日：2008-10-10
申请人： Marcin K. Augustyniak , Bernhard Wicht , Ingo Hehemann
发明人： Marcin K. Augustyniak , Bernhard Wicht , Ingo Hehemann
IPC分类号： G11C27/02
CPC分类号： G11C27/026
摘要： An integrated electronic device includes a sample and hold stage. The sample and hold stage has a sampling capacitor (C) for an input voltage at an input node (Vin), a first switch (S1) coupled between the input node (Vin) and the sampling capacitor (C) for connecting the input node (Vin) to the sampling capacitor (C). There is also a voltage follower with an input coupled to the sampling capacitor (C). The first switch (S1) includes a first MOS transistor (NM1) coupled between the input node (Vin) and the sampling capacitor (C). The first MOS transistor has a bulk. The sample and hold stage is adapted to selectively couple the bulk to a node having a voltage level (V3) which is equal or close to the voltage level at the input node of the voltage follower.
摘要翻译：集成电子设备包括采样和保持级。采样和保持级具有用于输入节点（Vin）处的输入电压的采样电容器（C），耦合在输入节点（Vin）和采样电容器（C）之间的第一开关（S1），用于连接输入节点（Vin）连接到采样电容器（C）。还有一个电压跟随器，其输入端耦合到采样电容器（C）。第一开关（S1）包括耦合在输入节点（Vin）和采样电容器（C）之间的第一MOS晶体管（NM1）。第一个MOS晶体管有一个大块。采样和保持级适于选择性地将体积耦合到具有等于或接近电压跟随器的输入节点处的电压电平的电压电平（V3）的节点。

5. 发明申请

US20090189647A1 BIAS CURRENT GENERATOR FOR MULTIPLIE SUPPLY VOLTAGE CIRCUIT 有权
标题翻译：用于多电源电压电路的偏置电流发生器
公开(公告)号：US20090189647A1
公开(公告)日：2009-07-30
申请号：US12358062
申请日：2009-01-22
申请人： Sri Navaneethakrishnan Easwaran , Ingo Hehemann
发明人： Sri Navaneethakrishnan Easwaran , Ingo Hehemann
IPC分类号： H03K5/22 , G05F1/10
CPC分类号： G05F3/262 , G05F3/30
摘要： An electronic device supplied by multiple supply voltages includes a bias current generating stage and maximum current selection stage. The bias current generating stage comprises a crude bias current generator for generating an crude bias current during a power up phase in which at least one of the multiple supply voltages has not yet reached its target supply voltage level, a reference current stage for providing a reference current having a target current value greater than the target value of the crude bias current when the multiple supply voltages have reached their target supply voltage levels. The maximum current selection stage is adapted to continuously output a bias current which is the maximum current of the crude bias current and the reference current.
摘要翻译：由多个电源电压提供的电子装置包括偏置电流产生级和最大电流选择级。偏置电流产生级包括粗电流发生器，用于在多电源电压尚未达到其目标电源电压电平的上电阶段期间产生粗偏置电流，用于提供参考的参考电流级当多个电源电压达到其目标电源电压电平时，具有大于粗偏置电流的目标值的目标电流值的电流。最大电流选择级适于连续输出作为粗偏置电流和参考电流的最大电流的偏置电流。

6. 发明授权

US07141833B2 Photodiode 有权
标题翻译：光电二极管
公开(公告)号：US07141833B2
公开(公告)日：2006-11-28
申请号：US10993588
申请日：2004-11-19
申请人： Ingo Hehemann , Armin Kemna
发明人： Ingo Hehemann , Armin Kemna
IPC分类号： H01L31/0328
CPC分类号： H01L27/1463 , H01L27/14643 , H01L31/035281 , H01L31/103 , Y02E10/50 , Y10S257/927
摘要： Apart from a semiconductor substrate and a photosensitive region in the semiconductor substrate, which comprises a space charge zone region for generating a diffusion current portion and a diffusion region for generating a diffusion current portion, a photodiode includes an insulation means in the semiconductor substrate for at least partially confining the diffusion region against an adjacent surrounding region of the semiconductor substrate. The reduction of the bandwidth of photodiodes by the smearing of the response of the photodiode by the diffusion current is alleviated by providing an insulation means in the semiconductor substrate, which confines the diffusion region against the surrounding semiconductor substrate and hereby on the one hand reduces the number of charge carriers contributing to the diffusion portion by reducing the diffusion region, in which the diffusing charge carriers are generated, and on the other hand by “sucking off” diffusing charge carriers generated in the shrunk diffusion region by the insulation means, which is why same do not contribute to the photocurrent.
摘要翻译：除了半导体衬底和半导体衬底中的感光区域之外，光电二极管包括用于产生扩散电流部分的用于产生扩散电流部分的空间电荷区域和扩散区域，光电二极管包括在半导体衬底中的绝缘装置至少部分地限制扩散区域抵靠半导体衬底的相邻周围区域。通过在半导体衬底中提供绝缘装置，通过扩散电流对光电二极管的响应的污染来减小光电二极管的带宽，从而将扩散区域限制在周围的半导体衬底上，从而一方面减少通过减少其中产生扩散电荷载流子的扩散区域而造成扩散部分的电荷载流子数量，另一方面是通过绝缘装置“缩小”扩散在收缩扩散区域中产生的电荷载流子为什么同样没有贡献光电流。

7. 发明授权

US08045317B2 Current limited voltage source with wide input current range 有权
标题翻译：电流限制电压源，输入电流范围宽
公开(公告)号：US08045317B2
公开(公告)日：2011-10-25
申请号：US12370157
申请日：2009-02-12
申请人： Sri N. Easwaran , Ingo Hehemann
发明人： Sri N. Easwaran , Ingo Hehemann
IPC分类号： F23Q5/00
CPC分类号： G05F1/561 , B60R21/0173 , G05F1/573
摘要： An integrated electronic device includes circuitry for providing a regulated output supply voltage level at an output node from an adjustable current. The circuitry includes an adjustable current source for providing the adjustable current and for adjusting the adjustable current to a magnitude of a target value in response to a configuration signal, an auxiliary adjustable current source providing an auxiliary adjustable current having a magnitude corresponding to the target value, and an output supply voltage level regulating loop coupled to the output node and adapted to keep the output supply voltage level at a preset value. A current selecting stage is adapted to receive the adjustable current and the auxiliary current. The current selecting stage is further adapted to supply a selected current corresponding to a lesser value of the adjustable current and the auxiliary adjustable current. Further, a current limiting stage is coupled to the output node for limiting the selected current to a predefined magnitude.
摘要翻译：集成电子设备包括用于在可调节电流处在输出节点处提供稳定的输出电压电平的电路。该电路包括可调电流源，用于提供可调节的电流并且用于响应于配置信号将可调电流调整到目标值的幅度，辅助可调电流源提供具有对应于目标值的幅度的辅助可调电流以及耦合到输出节点并且适于将输出电源电压电平保持在预设值的输出电源电压电平调节环路。电流选择级适于接收可调电流和辅助电流。当前选择级进一步适于提供对应于可调电流和辅助可调电流较小值的所选电流。此外，电流限制级耦合到输出节点，用于将所选择的电流限制到预定义的大小。

8. 发明申请

US20050156182A1 Photodiode 有权
标题翻译：光电二极管
公开(公告)号：US20050156182A1
公开(公告)日：2005-07-21
申请号：US10993588
申请日：2004-11-19
申请人： Ingo Hehemann , Armin Kemna
发明人： Ingo Hehemann , Armin Kemna
IPC分类号： H01L31/04 , H01L27/144 , H01L27/146 , H01L27/15 , H01L31/0352 , H01L31/103
CPC分类号： H01L27/1463 , H01L27/14643 , H01L31/035281 , H01L31/103 , Y02E10/50 , Y10S257/927
摘要： Apart from a semiconductor substrate and a photosensitive region in the semiconductor substrate, which comprises a space charge zone region for generating a diffusion current portion and a diffusion region for generating a diffusion current portion, a photodiode includes an insulation means in the semiconductor substrate for at least partially confining the diffusion region against an adjacent surrounding region of the semiconductor substrate. The reduction of the bandwidth of photodiodes by the smearing of the response of the photodiode by the diffusion current is alleviated by providing an insulation means in the semiconductor substrate, which confines the diffusion region against the surrounding semiconductor substrate and hereby on the one hand reduces the number of charge carriers contributing to the diffusion portion by reducing the diffusion region, in which the diffusing charge carriers are generated, and on the other hand by “sucking off” diffusing charge carriers generated in the shrunk diffusion region by the insulation means, which is why same do not contribute to the photocurrent.
摘要翻译：除了半导体衬底和半导体衬底中的感光区域之外，光电二极管包括用于产生扩散电流部分的用于产生扩散电流部分的空间电荷区域和扩散区域，光电二极管包括在半导体衬底中的绝缘装置至少部分地限制扩散区域抵靠半导体衬底的相邻周围区域。通过在半导体衬底中提供绝缘装置，通过扩散电流对光电二极管的响应的污染来减小光电二极管的带宽，从而将扩散区域限制在周围的半导体衬底上，从而一方面减少通过减少其中产生扩散电荷载流子的扩散区域而造成扩散部分的电荷载流子数量，另一方面是通过绝缘装置“缩小”扩散在收缩扩散区域中产生的电荷载流子为什么同样没有贡献光电流。

9. 发明授权

US07888993B2 Bias current generator for multiple supply voltage circuit 有权
标题翻译：偏压电流发生器用于多电源电压电路
公开(公告)号：US07888993B2
公开(公告)日：2011-02-15
申请号：US12358062
申请日：2009-01-22
申请人： Sri Navaneethakrishnan Easwaran , Ingo Hehemann
发明人： Sri Navaneethakrishnan Easwaran , Ingo Hehemann
IPC分类号： G05F1/10
CPC分类号： G05F3/262 , G05F3/30
摘要： An electronic device supplied by multiple supply voltages includes a bias current generating stage and maximum current selection stage. The bias current generating stage comprises a crude bias current generator for generating an crude bias current during a power up phase in which at least one of the multiple supply voltages has not yet reached its target supply voltage level, a reference current stage for providing a reference current having a target current value greater than the target value of the crude bias current when the multiple supply voltages have reached their target supply voltage levels. The maximum current selection stage is adapted to continuously output a bias current which is the maximum current of the crude bias current and the reference current.
摘要翻译：由多个电源电压提供的电子装置包括偏置电流产生级和最大电流选择级。偏置电流产生级包括粗电流发生器，用于在多电源电压尚未达到其目标电源电压电平的上电阶段期间产生粗偏置电流，用于提供参考的参考电流级当多个电源电压达到其目标电源电压电平时，具有大于粗偏置电流的目标值的目标电流值的电流。最大电流选择级适于连续输出作为粗偏置电流和参考电流的最大电流的偏置电流。

10. 发明授权

US07812646B2 Low-leakage switch for sample and hold 有权
标题翻译：低泄漏开关用于采样和保持
公开(公告)号：US07812646B2
公开(公告)日：2010-10-12
申请号：US12249509
申请日：2008-10-10
申请人： Marcin K. Augustyniak , Bernhard Wicht , Ingo Hehemann
发明人： Marcin K. Augustyniak , Bernhard Wicht , Ingo Hehemann
IPC分类号： G11C27/02
CPC分类号： G11C27/026
摘要： An integrated electronic device includes a sample and hold stage. The sample and hold stage has a sampling capacitor (C) for an input voltage at an input node (Vin), a first switch (S1) coupled between the input node (Vin) and the sampling capacitor (C) for connecting the input node (Vin) to the sampling capacitor (C). There is also a voltage follower with an input coupled to the sampling capacitor (C). The first switch (S1) includes a first MOS transistor (NM1) coupled between the input node (Vin) and the sampling capacitor (C). The first MOS transistor has a bulk. The sample and hold stage is adapted to selectively couple the bulk to a node having a voltage level (V3) which is equal or close to the voltage level at the input node of the voltage follower.
摘要翻译：集成电子设备包括采样和保持级。采样和保持级具有用于输入节点（Vin）处的输入电压的采样电容器（C），耦合在输入节点（Vin）和采样电容器（C）之间的第一开关（S1），用于连接输入节点（Vin）连接到采样电容器（C）。还有一个电压跟随器，其输入端耦合到采样电容器（C）。第一开关（S1）包括耦合在输入节点（Vin）和采样电容器（C）之间的第一MOS晶体管（NM1）。第一个MOS晶体管有一个大块。采样和保持级适于选择性地将体积耦合到具有等于或接近电压跟随器的输入节点处的电压电平的电压电平（V3）的节点。

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