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    • 4. 发明授权
    • Vertical mirror in a silicon photonic circuit
    • 硅光子电路中的垂直镜
    • US08803268B2
    • 2014-08-12
    • US13871083
    • 2013-04-26
    • Intel Corporation
    • John HeckAnsheng LiuMichael T. MorseHaisheng Rong
    • H01L27/14
    • H01L31/02327G02B6/4214
    • A vertical total internal reflection (TIR) mirror and fabrication thereof is made by creating a re-entrant profile using crystallographic silicon etching. Starting with an SOI wafer, a deep silicon etch is used to expose the buried oxide layer, which is then wet-etched (in HF), opening the bottom surface of the Si device layer. This bottom silicon surface is then exposed so that in a crystallographic etch, the resulting shape is a re-entrant trapezoid with facets These facets can be used in conjunction with planar silicon waveguides to reflect the light upwards based on the TIR principle. Alternately, light can be coupled into the silicon waveguides from above the wafer for such purposes as wafer level testing.
    • 垂直全内反射(TIR)镜及其制造是通过使用晶体硅蚀刻创建入门轮廓而制成的。 从SOI晶片开始,使用深硅蚀刻来暴露掩埋氧化物层,然后将其湿法蚀刻(在HF中),打开Si器件层的底表面。 然后将该底部硅表面暴露,使得在晶体刻蚀中,所得到的形状是具有刻面的重入梯形。这些刻面可以与平面硅波导结合使用以基于TIR原理向上反射光。 或者,光可以从晶片上方耦合到硅波导中,用于诸如晶片级测试的目的。
    • 9. 发明申请
    • OPTO-MECHANICAL INERTIAL SENSOR
    • 光机械惯性传感器
    • US20160195397A1
    • 2016-07-07
    • US14106158
    • 2013-12-13
    • Intel Corporation
    • Suraj BramhavarDavid N. HutchisonJohn Heck
    • G01C19/72G01C19/56G01D5/353
    • G01C19/722G01C19/56G01C19/5719G01D5/35374G01P15/093G01P2015/084G02B6/4225
    • Embodiments of the present disclosure are directed towards a micro-electromechanical system (MEMS) sensing apparatus, including a laser arrangement configured to generate a light beam, a first waveguide configured to receive and output the light beam, and a second waveguide aligned endface to endface with the first waveguide. The second waveguide may be configured to receive at least a portion of the light beam from the first waveguide via optical coupling through the aligned endfaces. Either the first or second waveguide may be configured to be moveable in response to an inertial change of the apparatus, wherein movement of the first or second waveguide causes a corresponding change in light intensity of the portion of the light beam, the change in light intensity indicating a measure of the inertial change. Other embodiments may be described and/or claimed.
    • 本公开的实施例涉及一种微机电系统(MEMS)感测装置,其包括被配置为产生光束的激光装置,被配置为接收和输出光束的第一波导,以及将端面与端面对准的第二波导 与第一波导。 第二波导可以被配置为通过经由对准的端面的光耦合来接收来自第一波导的光束的至少一部分。 第一或第二波导可以被配置为响应于设备的惯性变化而可移动,其中第一或第二波导的移动导致光束部分的光强度的相应变化,光强度的变化 表明惯性变化的度量。 可以描述和/或要求保护其他实施例。
    • 10. 发明授权
    • Optomechanical inertial sensor
    • 光机械惯性传感器
    • US09285391B2
    • 2016-03-15
    • US14106259
    • 2013-12-13
    • Intel Corporation
    • David N. HutchisonJohn Heck
    • G01B9/02G01P15/093G01C19/56G01P15/08
    • G01P15/093G01B9/02023G01C19/56G01C19/5712G01C19/5733G01C19/5776G01P2015/0848
    • Embodiments of the present disclosure are directed towards techniques and configurations for MEMS sensing device configured to determine inertial change applied to the device. In one instance, the device may comprise a laser arrangement configured to generate a light beam, and a waveguide configured to split the light beam into two portions. The waveguide may include two arms through which the respective portions of the light beam may respectively pass, and disposed substantially parallel with each other and joined together around their respective ends to recombine the portions into a light beam. One of the arms may be deformable. A deformation of the arm may result in a change of an optical path length of a portion of the light beam traveling through the arm, causing a detectable change in light intensity of the recombined light beam outputted by the waveguide. Other embodiments may be described and/or claimed.
    • 本公开的实施例涉及用于确定施加到该装置的惯性变化的MEMS感测装置的技术和配置。 在一个实例中,该装置可以包括被配置为产生光束的激光装置和被配置为将光束分成两部分的波导。 波导可以包括两个臂,光束的各个部分可以分别通过该臂,并且基本上彼此平行地设置并且在其各自的端部处连接在一起,以将这些部分重新组合成光束。 其中一个臂可以是可变形的。 臂的变形可能导致穿过臂的光束的一部分的光路长度的变化,导致由波导输出的复合光束的光强度的可检测变化。 可以描述和/或要求保护其他实施例。