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1. 发明申请

US20160028008A1 ReRAM cells with diffusion-resistant metal silicon oxide layers 有权
公开(公告)号：US20160028008A1
公开(公告)日：2016-01-28
申请号：US14338979
申请日：2014-07-23
申请人： Intermolecular Inc. , Kabushiki Kaisha Toshiba , SanDisk 3D LLC
发明人： Yun Wang , Federico Nardi
IPC分类号： H01L45/00
CPC分类号： H01L45/1253 , H01L27/24 , H01L27/2409 , H01L45/04 , H01L45/08 , H01L45/085 , H01L45/1233 , H01L45/1246 , H01L45/1266 , H01L45/145 , H01L45/146 , H01L45/1616
摘要： A metal silicon oxide barrier layer between a nitride electrode containing the same metal and an oxide variable-resistance layer in a ReRAM cell prevents the metal from diffusing into the variable-resistance layer and prevents oxygen from diffusing into and oxidizing the electrode. Compound oxides of the same metal and silicon with varying stoichiometries and metal/silicon ratios may optionally replace part or all of the variable-resistance layer, a defect-reservoir layer, or both. The metal nitride electrode may include a metal silicon nitride current-limiting portion. Optionally, all the layers sharing the common metal may be formed in-situ as part of a single unit process, such as atomic layer deposition.

2. 发明授权

US09246091B1 ReRAM cells with diffusion-resistant metal silicon oxide layers 有权
标题翻译： ReRAM电池具有耐扩散性的金属氧化硅层
公开(公告)号：US09246091B1
公开(公告)日：2016-01-26
申请号：US14338979
申请日：2014-07-23
申请人： Intermolecular Inc. , Kabushiki Kaisha Toshiba , SanDisk 3D LLC
发明人： Yun Wang , Federico Nardi
IPC分类号： H01L27/24 , H01L45/00
CPC分类号： H01L45/1253 , H01L27/24 , H01L27/2409 , H01L45/04 , H01L45/08 , H01L45/085 , H01L45/1233 , H01L45/1246 , H01L45/1266 , H01L45/145 , H01L45/146 , H01L45/1616
摘要： A metal silicon oxide barrier layer between a nitride electrode containing the same metal and an oxide variable-resistance layer in a ReRAM cell prevents the metal from diffusing into the variable-resistance layer and prevents oxygen from diffusing into and oxidizing the electrode. Compound oxides of the same metal and silicon with varying stoichiometries and metal/silicon ratios may optionally replace part or all of the variable-resistance layer, a defect-reservoir layer, or both. The metal nitride electrode may include a metal silicon nitride current-limiting portion. Optionally, all the layers sharing the common metal may be formed in-situ as part of a single unit process, such as atomic layer deposition.
摘要翻译：在ReRAM单元中含有相同金属的氮化物电极和氧化物可变电阻层之间的金属氧化硅阻挡层防止金属扩散到可变电阻层中，并防止氧气扩散到氧化电极。具有不同化学计量和金属/硅比的相同金属和硅的复合氧化物可任选地替代部分或全部可变电阻层，缺陷储层或两者。金属氮化物电极可以包括金属氮化硅限流部。可选地，共享公共金属的所有层可以原位形成为单个单元工艺的一部分，例如原子层沉积。

3. 发明授权

US09178000B1 Resistive random access memory cells having shared electrodes with transistor devices 有权
标题翻译：具有与晶体管器件共享的电极的电阻式随机存取存储器单元
公开(公告)号：US09178000B1
公开(公告)日：2015-11-03
申请号：US14264280
申请日：2014-04-29
申请人： Intermolecular Inc. , Kabushiki Kaisha Toshiba , SanDisk 3D LLC
发明人： Federico Nardi , Ryan C. Clarke , Tim Minvielle , Yun Wang
IPC分类号： H01L29/02 , H01L29/792 , H01L27/11 , H01L21/00 , H01L27/24 , H01L45/00 , H01L29/08 , H01L21/265 , H01L21/02
CPC分类号： H01L27/2463 , H01L21/02532 , H01L21/02595 , H01L21/265 , H01L27/2436 , H01L29/0847 , H01L45/08 , H01L45/1233 , H01L45/1253 , H01L45/146 , H01L45/1608 , H01L45/1616 , H01L45/1625
摘要： Provided are resistive random access memory (ReRAM) cells having extended conductive layers operable as electrodes of other devices, and methods of fabricating such cells and other devices. A conductive layer of a ReRAM cell extends beyond the cell boundary defined by the variable resistance layer. The extended portion may be used a source or drain region of a FET that may control an electrical current through the cell or other devices. The extended conductive layer may be also operable as electrode of another resistive-switching cell or a different device. The extended conductive layer may be formed from doped silicon. The variable resistance layer of the ReRAM cell may be positioned on the same level as a gate dielectric layer of the FET. The variable resistance layer and the gate dielectric layer may have the same thickness and share common materials, though they may be differently doped.
摘要翻译：提供了具有可操作为其他器件的电极的延伸导电层的电阻随机存取存储器（ReRAM）单元，以及制造这样的单元和其它器件的方法。 ReRAM单元的导电层延伸超过由可变电阻层限定的单元边界。延伸部分可以用于可控制通过电池或其他装置的电流的FET的源极或漏极区域。扩展导电层也可以作为另一电阻式开关电池或不同器件的电极工作。延伸的导电层可以由掺杂的硅形成。 ReRAM单元的可变电阻层可以位于与FET的栅极电介质层相同的水平上。可变电阻层和栅极电介质层可以具有相同的厚度并且共享共同的材料，尽管它们可以是不同的掺杂。

4. 发明申请

US20150008386A1 Morphology control of ultra-thin MeOx layer 有权
公开(公告)号：US20150008386A1
公开(公告)日：2015-01-08
申请号：US14492852
申请日：2014-09-22
申请人： Intermolecular Inc. , Kabushiki Kaisha Toshiba , SanDisk 3D LLC
发明人： Federico Nardi , Yun Wang
IPC分类号： H01L45/00
CPC分类号： H01L45/06 , H01L27/2409 , H01L27/2436 , H01L27/2463 , H01L45/065 , H01L45/08 , H01L45/10 , H01L45/1233 , H01L45/1253 , H01L45/141 , H01L45/145 , H01L45/146 , H01L45/147 , H01L45/148 , H01L45/16 , H01L45/1616 , H01L51/0098
摘要： A nonvolatile memory device contains a resistive switching memory element with improved device switching performance and life and methods for forming the same. The nonvolatile memory device has a first layer on a substrate, a resistive switching layer on the first layer, and a second layer. The resistive switching layer is disposed between the first layer and the second layer and the resistive switching layer comprises a material having the same morphology as the top surface of the first layer. A method of forming a nonvolatile memory element in a ReRAM device includes forming a resistive switching layer on a first layer and forming a second layer, so that the resistive switching layer is disposed between the first layer and the second layer. The resistive switching layer comprises a material formed with the same morphology as the top surface of the first layer.

5. 发明授权

US09047940B2 Resistive random access memory cells having variable switching characteristics 有权
标题翻译：具有可变开关特性的电阻式随机存取存储器单元
公开(公告)号：US09047940B2
公开(公告)日：2015-06-02
申请号：US13738524
申请日：2013-01-10
申请人： Intermolecular Inc. , Kabushiki Kaisha Toshiba , SanDisk 3D LLC
发明人： Federico Nardi , Yun Wang
IPC分类号： G11C11/00 , G11C13/00 , H01L45/00 , H01L27/24
CPC分类号： G11C13/0007 , G11C13/0069 , G11C2013/0083 , G11C2213/12 , G11C2213/15 , G11C2213/52 , G11C2213/71 , H01L27/2463 , H01L27/2481 , H01L45/06 , H01L45/08 , H01L45/085 , H01L45/1233 , H01L45/145 , H01L45/146 , H01L45/147 , H01L45/149
摘要： Provided are resistive random access memory (ReRAM) cells forming arrays and methods of operating such cells and arrays. The ReRAM cells of the same array may have the same structure, such as have the same bottom electrodes, top electrodes, and resistive switching layers. Yet, these cells may be operated in a different manner. For example, some ReRAM cells may be restively switched using lower switching voltages than other cells. The cells may also have different data retention characteristics. These differences may be achieved by using different forming operations for different cells or, more specifically, flowing forming currents in different directions for different cells. The resulting conductive paths formed within the resistive switching layers are believed to switch at or near different electrode interfaces, i.e., within a so called switching zone. In some embodiments, a switching zone of a ReRAM cell may be changed even after the initial formation.
摘要翻译：提供形成阵列的电阻随机存取存储器（ReRAM）单元和操作这样的单元和阵列的方法。相同阵列的ReRAM单元可以具有相同的结构，例如具有相同的底部电极，顶部电极和电阻式开关层。然而，这些电池可以以不同的方式操作。例如，可以使用比其他单元更低的开关电压来重新切换一些ReRAM单元。细胞也可能具有不同的数据保留特征。这些差异可以通过对于不同的单元使用不同的成形操作来实现，或者更具体地，针对不同的单元流动形成不同方向的电流。形成在电阻开关层内的所得导电路径被认为在不同的电极接口处，即在所谓的开关区域内或附近切换。在一些实施例中，即使在初始形成之后，ReRAM单元的切换区也可能改变。

6. 发明授权

US08866118B2 Morphology control of ultra-thin MeOx layer 有权
公开(公告)号：US08866118B2
公开(公告)日：2014-10-21
申请号：US13724126
申请日：2012-12-21
申请人： Intermolecular Inc. , Kabushiki Kaisha Toshiba , SanDisk 3D LLC
发明人： Federico Nardi , Yun Wang
IPC分类号： H01L29/02 , H01L45/00
CPC分类号： H01L45/06 , H01L27/2409 , H01L27/2436 , H01L27/2463 , H01L45/065 , H01L45/08 , H01L45/10 , H01L45/1233 , H01L45/1253 , H01L45/141 , H01L45/145 , H01L45/146 , H01L45/147 , H01L45/148 , H01L45/16 , H01L45/1616 , H01L51/0098
摘要： A nonvolatile memory device contains a resistive switching memory element with improved device switching performance and life and methods for forming the same. The nonvolatile memory device has a first layer on a substrate, a resistive switching layer on the first layer, and a second layer. The resistive switching layer is disposed between the first layer and the second layer and the resistive switching layer comprises a material having the same morphology as the top surface of the first layer. A method of forming a nonvolatile memory element in a ReRAM device includes forming a resistive switching layer on a first layer and forming a second layer, so that the resistive switching layer is disposed between the first layer and the second layer. The resistive switching layer comprises a material formed with the same morphology as the top surface of the first layer.

7. 发明申请

US20160149130A1 Two Stage Forming of Resistive Random Access Memory Cells 有权
标题翻译：电阻随机存取存储单元的两阶段形成
公开(公告)号：US20160149130A1
公开(公告)日：2016-05-26
申请号：US14552034
申请日：2014-11-24
申请人： Intermolecular Inc. , Kabushiki Kaisha Toshiba , SanDisk 3D LLC
发明人： Yun Wang , Federico Nardi
IPC分类号： H01L45/00 , G11C13/00
CPC分类号： G11C13/0069 , G11C13/0007 , G11C2013/0083 , G11C2013/009 , G11C2213/32 , G11C2213/33 , G11C2213/34 , G11C2213/56 , G11C2213/71 , G11C2213/77 , H01L27/2409 , H01L27/2481 , H01L45/08 , H01L45/1233 , H01L45/145
摘要： Provided are memory cells, such as resistive random access memory (ReRAM) cells, each cell having multiple metal oxide layers formed from different oxides, and methods of manipulating and fabricating these cells. Two metal oxides used in the same cell have different dielectric constants, such as silicon oxide and hafnium oxide. The memory cell may include electrodes having different metals. Diffusivity of these metals into interfacing metal oxide layers may be different. Specifically, the lower-k oxide may be less prone to diffusion of the metal from the interfacing electrode than the higher-k oxide. The memory cell may be formed to different stable resistive levels and then resistively switched at these levels. Each level may use a different switching power. The switching level may be selected a user after fabrication of the cell and in, some embodiments, may be changed, for example, after switching the cell at a particular level.
摘要翻译：提供了诸如电阻随机存取存储器（ReRAM）单元的存储器单元，每个单元具有由不同氧化物形成的多个金属氧化物层，以及操纵和制造这些单元的方法。在同一电池中使用的两种金属氧化物具有不同的介电常数，例如氧化硅和氧化铪。存储单元可以包括具有不同金属的电极。这些金属在界面金属氧化物层中的扩散性可能是不同的。具体而言，低K氧化物可能比较高K氧化物更不易于从界面电极扩散金属。可以将存储单元形成为不同的稳定电阻水平，然后在这些电平下进行电阻切换。每个级别可能使用不同的开关电源。可以在单元的制造之后选择用户的切换级别，并且在一些实施例中，可以例如在将单元切换到特定级别之后进行改变。

8. 发明授权

US09224951B1 Current-limiting electrodes 有权
标题翻译：限流电极
公开(公告)号：US09224951B1
公开(公告)日：2015-12-29
申请号：US14336652
申请日：2014-07-21
申请人： Intermolecular Inc. , Kabushiki Kaisha Toshiba , SanDisk 3D LLC
发明人： Yun Wang , Federico Nardi , Milind Weling
IPC分类号： H01L27/24 , H01L45/00
CPC分类号： H01L45/145 , H01L27/24 , H01L27/2409 , H01L45/04 , H01L45/08 , H01L45/1246 , H01L45/1253 , H01L45/1608 , H01L45/1625 , H01L45/1641
摘要： A resistive-switching memory (ReRAM cell) has a current-limiting electrode layer that combines the functions of an embedded resistor, an outer electrode, and an intermediate electrode, reducing the thickness of the ReRAM stack and simplifying the fabrication process. The materials include compound nitrides of a transition metal and one of aluminum, boron, or silicon. In experiments with tantalum silicon nitride, peak yield in the desired resistivity range corresponded to ˜24 at % silicon and ˜32 at % nitrogen, believed to optimize the trade-off between inhibiting TaSi2 formation and minimizing nitrogen diffusion. A binary metal nitride may be formed at one or more of the interfaces between the current-limiting electrode and neighboring layers such as metal-oxide switching layers.
摘要翻译：电阻式开关存储器（ReRAM单元）具有限流电极层，其结合了嵌入式电阻器，外部电极和中间电极的功能，减小了ReRAM堆叠的厚度并简化了制造工艺。这些材料包括过渡金属和铝，硼或硅之一的化合物氮化物。在使用钽氮化硅的实验中，所需电阻率范围内的峰值产率对应于〜24at％的硅和〜32at％的氮，据信可以优化抑制TaSi2形成和最小化氮扩散之间的折衷。二元金属氮化物可以形成在限流电极和相邻层之间的界面中的一个或多个处，例如金属氧化物开关层。

9. 发明授权

US09178140B2 Morphology control of ultra-thin MeOx layer 有权
标题翻译：超薄MeOx层的形态控制
公开(公告)号：US09178140B2
公开(公告)日：2015-11-03
申请号：US14624209
申请日：2015-02-17
申请人： Intermolecular Inc. , Kabushiki Kaisha Toshiba , SanDisk 3D LLC
发明人： Federico Nardi , Yun Wang
IPC分类号： H01L29/02 , H01L45/00 , H01L51/00 , H01L27/24
CPC分类号： H01L45/06 , H01L27/2409 , H01L27/2436 , H01L27/2463 , H01L45/065 , H01L45/08 , H01L45/10 , H01L45/1233 , H01L45/1253 , H01L45/141 , H01L45/145 , H01L45/146 , H01L45/147 , H01L45/148 , H01L45/16 , H01L45/1616 , H01L51/0098
摘要： A nonvolatile memory device contains a resistive switching memory element with improved device switching performance and life and methods for forming the same. The nonvolatile memory device has a first layer on a substrate, a resistive switching layer on the first layer, and a second layer. The resistive switching layer is disposed between the first layer and the second layer and the resistive switching layer comprises a material having the same morphology as the top surface of the first layer. A method of forming a nonvolatile memory element in a ReRAM device includes forming a resistive switching layer on a first layer and forming a second layer, so that the resistive switching layer is disposed between the first layer and the second layer. The resistive switching layer comprises a material formed with the same morphology as the top surface of the first layer.
摘要翻译：非易失性存储器件包含具有改进的器件切换性能和寿命的电阻式开关存储器元件及其形成方法。非易失性存储器件在衬底上具有第一层，在第一层上具有电阻性开关层，以及第二层。电阻开关层设置在第一层和第二层之间，电阻开关层包括与第一层的顶表面相同形态的材料。在ReRAM器件中形成非易失性存储元件的方法包括在第一层上形成电阻式开关层并形成第二层，使得电阻式开关层位于第一层和第二层之间。电阻开关层包括与第一层的顶表面形成相同形态的材料。

10. 发明申请

US20150311257A1 Resistive Random Access Memory Cells Having Shared Electrodes with Transistor Devices 有权
标题翻译：具有晶体管器件的共享电极的电阻随机存取存储器单元
公开(公告)号：US20150311257A1
公开(公告)日：2015-10-29
申请号：US14264280
申请日：2014-04-29
申请人： Intermolecular Inc. , Kabushiki Kaisha Toshiba , SanDisk 3D LLC
发明人： Federico Nardi , Ryan C. Clarke , Tim Minvielle , Yun Wang
IPC分类号： H01L27/24 , H01L21/02 , H01L21/265 , H01L45/00 , H01L29/08
CPC分类号： H01L27/2463 , H01L21/02532 , H01L21/02595 , H01L21/265 , H01L27/2436 , H01L29/0847 , H01L45/08 , H01L45/1233 , H01L45/1253 , H01L45/146 , H01L45/1608 , H01L45/1616 , H01L45/1625
摘要： Provided are resistive random access memory (ReRAM) cells having extended conductive layers operable as electrodes of other devices, and methods of fabricating such cells and other devices. A conductive layer of a ReRAM cell extends beyond the cell boundary defined by the variable resistance layer. The extended portion may be used a source or drain region of a FET that may control an electrical current through the cell or other devices. The extended conductive layer may be also operable as electrode of another resistive-switching cell or a different device. The extended conductive layer may be formed from doped silicon. The variable resistance layer of the ReRAM cell may be positioned on the same level as a gate dielectric layer of the FET. The variable resistance layer and the gate dielectric layer may have the same thickness and share common materials, though they may be differently doped.
摘要翻译：提供了具有可操作为其他器件的电极的延伸导电层的电阻随机存取存储器（ReRAM）单元，以及制造这样的单元和其它器件的方法。 ReRAM单元的导电层延伸超过由可变电阻层限定的单元边界。延伸部分可以用于可控制通过电池或其他装置的电流的FET的源极或漏极区域。扩展导电层也可以作为另一电阻式开关电池或不同器件的电极工作。延伸的导电层可以由掺杂的硅形成。 ReRAM单元的可变电阻层可以位于与FET的栅极电介质层相同的水平上。可变电阻层和栅极电介质层可以具有相同的厚度并且共享共同的材料，尽管它们可以是不同的掺杂。

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