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1. 发明授权

US11011295B2 High efficiency on-chip 3D transformer structure 有权
公开(公告)号：US11011295B2
公开(公告)日：2021-05-18
申请号：US16012384
申请日：2018-06-19
申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION
发明人： Robert L. Barry , Robert A. Groves , Venkata Nr. Vanukuru
IPC分类号： H01F27/28
摘要： An integrated circuit transformer structure includes at least two conductor groups stacked in parallel in different layers. A first spiral track is formed in the at least two conductor groups, the first spiral track included first turns of a first radius within each of the at least two conductor groups, and second turns of a second radius within each of the at least two conductor groups, the first and second turns being electrically connected. A second spiral track is formed in the at least two conductor groups, the second spiral track including third turns of a third radius within each of the at least two conductor groups and disposed in a same plane between the first and second turns in each of the at least two conductor groups.

2. 发明申请

US20180301274A1 HIGH EFFICIENCY ON-CHIP 3D TRANSFORMER STRUCTURE 审中-公开
公开(公告)号：US20180301274A1
公开(公告)日：2018-10-18
申请号：US16012384
申请日：2018-06-19
申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION
发明人： Robert L. Barry , Robert A. Groves , Venkata Nr. Vanukuru
IPC分类号： H01F27/28
摘要： An integrated circuit transformer structure includes at least two conductor groups stacked in parallel in different layers. A first spiral track is formed in the at least two conductor groups, the first spiral track included first turns of a first radius within each of the at least two conductor groups, and second turns of a second radius within each of the at least two conductor groups, the first and second turns being electrically connected. A second spiral track is formed in the at least two conductor groups, the second spiral track including third turns of a third radius within each of the at least two conductor groups and disposed in a same plane between the first and second turns in each of the at least two conductor groups.

3. 发明申请

US20150028986A1 HIGH EFFICIENCY ON-CHIP 3D TRANSFORMER STRUCTURE 有权
标题翻译：高效率片上三维变压器结构
公开(公告)号：US20150028986A1
公开(公告)日：2015-01-29
申请号：US13950557
申请日：2013-07-25
申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION
发明人： Robert L. Barry , Robert A. Groves , Venkata Nr. Vanukuru
IPC分类号： H01F27/28 , H01F41/04
CPC分类号： H01F27/2804 , H01F27/2871 , H01F2027/2809 , Y10T29/49071
摘要： An integrated circuit transformer structure includes at least two conductor groups stacked in parallel in different layers. A first spiral track is formed in the at least two conductor groups, the first spiral track included first turns of a first radius within each of the at least two conductor groups, and second turns of a second radius within each of the at least two conductor groups, the first and second turns being electrically connected. A second spiral track is formed in the at least two conductor groups, the second spiral track including third turns of a third radius within each of the at least two conductor groups and disposed in a same plane between the first and second turns in each of the at least two conductor groups.
摘要翻译：集成电路变压器结构包括在不同层中并联堆叠的至少两个导体组。第一螺旋轨道形成在至少两个导体组中，第一螺旋轨道包括至少两个导体组中的每一个内的第一半径的第一匝和在至少两个导体的每一个内的第二半径的第二匝组，第一和第二匝电连接。在所述至少两个导体组中形成第二螺旋形轨道，所述第二螺旋轨道包括所述至少两个导体组中的每一个内的第三半径的第三匝，并且设置在所述至少两个导体组中的每一个中的所述第一和第二匝之间的同一平面中至少两个导体组。

4. 发明申请

US20150028979A1 HIGH EFFICIENCY ON-CHIP 3D TRANSFORMER STRUCTURE 有权
标题翻译：高效率片上三维变压器结构
公开(公告)号：US20150028979A1
公开(公告)日：2015-01-29
申请号：US13950027
申请日：2013-07-24
申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION
发明人： Robert L. Barry , Venkata Nr. Vanukuru
IPC分类号： H01F5/00
CPC分类号： H01F27/2804 , H01F19/04 , H01F2027/2819
摘要： A transformer structure includes at least three sections, each corresponding to metal layers of an integrated circuit. A first section of the at least three sections is electrically coupled to a third section with a second section disposed between the first and third sections. The at least three sections includes inductor coils, all of which are wound in a same direction and voltage phase starting at an outer terminal and continuing to an inner terminal of each inductor coil. At least one radial wiring channel passes through a portion of a coil in one of the three sections to provide an external connection to an internal terminal of the coil in at least one of the three sections.
摘要翻译：变压器结构包括至少三个部分，每个部分对应于集成电路的金属层。所述至少三个部分的第一部分电耦合到第三部分，其中第二部分设置在第一和第三部分之间。所述至少三个部分包括电感线圈，所有这些电感线圈都以相同的方向缠绕并且电压相位从外部端子开始并连续到每个电感器线圈的内部端子。至少一个径向布线通道在三个部分中的一个部分中通过线圈的一部分，以在三个部分中的至少一个部分中提供到线圈的内部端子的外部连接。

5. 发明申请

US20150371759A1 HIGH EFFICIENCY ON-CHIP 3D TRANSFORMER STRUCTURE 有权
标题翻译：高效率片上三维变压器结构
公开(公告)号：US20150371759A1
公开(公告)日：2015-12-24
申请号：US14841447
申请日：2015-08-31
申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION
发明人： Robert L. Barry , Venkata Nr. Vanukuru
IPC分类号： H01F27/28
CPC分类号： H01F27/2804 , H01F5/00 , H01F19/04 , H01F27/00 , H01F2027/2809 , H01F2027/2819
摘要： A transformer structure includes a first coil having two sections of spiral, with a top section including a plurality of metal layers occupying top X metal layers and a bottom section including a plurality of metal layers occupying bottom Z metal layers, where X and Z represent a number of metal layers having a specific number selected to provide a particular performance of the first coil. A second coil of the transformer is disposed between the two sections of the first coil and includes a plurality of metal layers where Y represents a number of vertically adjacent metal layers, with the specific number chosen to provide the particular performance, such that a sum X+Y+Z represents a total number of vertical metal layers for the transformer structure.
摘要翻译：变压器结构包括具有两个螺旋部分的第一线圈，顶部包括占据顶部X金属层的多个金属层，以及包括占据底部Z金属层的多个金属层的底部区域，其中X和Z表示选择具有特定数量以提供第一线圈的特定性能的金属层数量。变压器的第二线圈设置在第一线圈的两个部分之间，并且包括多个金属层，其中Y表示多个垂直相邻的金属层，具有特定数量以提供特定性能，使得总和X + Y + Z表示变压器结构的垂直金属层的总数。

6. 发明申请

US20140264738A1 FOLDED CONICAL INDUCTOR 有权
标题翻译：折叠式电感器
公开(公告)号：US20140264738A1
公开(公告)日：2014-09-18
申请号：US14294485
申请日：2014-06-03
申请人： International Business Machines Corporation
发明人： Robert L. Barry , Robert A. Groves , Venkata N.R. Vanukuru
IPC分类号： H01L29/86
CPC分类号： H01L29/86 , H01F17/0013 , H01L23/5227 , H01L28/10 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor inductor structure may include a first spiral structure, located on a first metal layer, having a first outer-spiral electrically conductive track and a first inner-spiral electrically conductive track separated from the first outer-spiral electrically conductive track by a first dielectric material. A second spiral structure, located on a second metal layer, having a second outer-spiral electrically conductive track and a second inner-spiral electrically conductive track separated from the second outer-spiral electrically conductive track by a second dielectric material may also be provided. The first outer-spiral electrically conductive track may be electrically coupled to the second outer-spiral electrically conductive track and the first inner-spiral electrically conductive track may be electrically coupled to the second inner-spiral electrically conductive track. The first outer-spiral conductive track is laterally offset relative to the second outer-spiral conductive track and the first inner-spiral conductive track is laterally offset relative to the second inner-spiral conductive track.
摘要翻译：半导体电感器结构可以包括位于第一金属层上的第一螺旋结构，其具有第一外螺旋导电轨道和通过第一电介质与第一外螺旋导电轨道分开的第一内螺旋导电轨道材料。还可以提供位于第二金属层上的第二螺旋结构，其具有第二外螺旋导电轨道和通过第二介电材料与第二外螺旋导电轨道分离的第二内螺旋导电轨道。第一外螺旋导电轨道可以电耦合到第二外螺旋导电轨道，并且第一内螺旋导电轨道可以电耦合到第二内螺旋导电轨道。第一外螺旋导电轨道相对于第二外螺旋导电轨道横向偏移，并且第一内螺旋导电轨道相对于第二内螺旋导电轨道横向偏移。

7. 发明申请

US20140246752A1 SEGMENTED GUARD RING STRUCTURES WITH ELECTRICALLY INSULATED GAP STRUCTURES AND DESIGN STRUCTURES THEREOF 有权
标题翻译：具有电绝缘缝结构的分隔式护环结构及其设计结构
公开(公告)号：US20140246752A1
公开(公告)日：2014-09-04
申请号：US13782537
申请日：2013-03-01
申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION
发明人： Robert L. Barry , Phillip F. Chapman , Jeffrey P. Gambino , Michael L. Gautsch , Mark D. Jaffe , Kevin N. Ogg , Bradley A. Orner
IPC分类号： H01L21/762 , H01L29/06
CPC分类号： H01L21/76267 , G06F17/5045 , H01L21/76224 , H01L23/3171 , H01L23/562 , H01L23/585 , H01L23/66 , H01L29/0619 , H01L29/0649 , H01L2924/0002 , H01L2924/00
摘要： Disclosed are guard ring structures with an electrically insulated gap in a substrate to reduce or eliminate device coupling of integrated circuit chips, methods of manufacture and design structures. The method includes forming a guard ring structure comprising a plurality of metal layers within dielectric layers. The method further includes forming diffusion regions to electrically insulate a gap in a substrate formed by segmented portions of the guard ring structure.
摘要翻译：公开了一种在衬底中具有电绝缘间隙的保护环结构，以减少或消除集成电路芯片的器件耦合，制造方法和设计结构。该方法包括在电介质层内形成包括多个金属层的保护环结构。该方法还包括形成扩散区域以使由保护环结构的分段部分形成的衬底中的间隙电绝缘。

8. 发明授权

US09431164B2 High efficiency on-chip 3D transformer structure 有权
标题翻译：高效率片上3D变压器结构
公开(公告)号：US09431164B2
公开(公告)日：2016-08-30
申请号：US14841447
申请日：2015-08-31
申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION
发明人： Robert L. Barry , Venkata Nr. Vanukuru
IPC分类号： H01F5/00 , H01F27/28 , H01F27/00 , H01F19/04
CPC分类号： H01F27/2804 , H01F5/00 , H01F19/04 , H01F27/00 , H01F2027/2809 , H01F2027/2819
摘要： A transformer structure includes a first coil having two sections of spiral, with a top section including a plurality of metal layers occupying top X metal layers and a bottom section including a plurality of metal layers occupying bottom Z metal layers, where X and Z represent a number of metal layers having a specific number selected to provide a particular performance of the first coil. A second coil of the transformer is disposed between the two sections of the first coil and includes a plurality of metal layers where Y represents a number of vertically adjacent metal layers, with the specific number chosen to provide the particular performance, such that a sum X+Y+Z represents a total number of vertical metal layers for the transformer structure.
摘要翻译：变压器结构包括具有两个螺旋部分的第一线圈，顶部包括占据顶部X金属层的多个金属层，以及包括占据底部Z金属层的多个金属层的底部区域，其中X和Z表示选择具有特定数量以提供第一线圈的特定性能的金属层数量。变压器的第二线圈设置在第一线圈的两个部分之间，并且包括多个金属层，其中Y表示多个垂直相邻的金属层，具有特定数量以提供特定的性能，使得总和X + Y + Z表示变压器结构的垂直金属层的总数。

9. 发明授权

US09318620B2 Folded conical inductor 有权
标题翻译：折叠式锥形电感
公开(公告)号：US09318620B2
公开(公告)日：2016-04-19
申请号：US14294485
申请日：2014-06-03
申请人： International Business Machines Corporation
发明人： Robert L. Barry , Robert A. Groves , Venkata N. R. Vanukuru
IPC分类号： H01F5/00 , H01L29/86 , H01L49/02 , H01L23/522
CPC分类号： H01L29/86 , H01F17/0013 , H01L23/5227 , H01L28/10 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor inductor structure may include a first spiral structure, located on a first metal layer, having a first outer-spiral electrically conductive track and a first inner-spiral electrically conductive track separated from the first outer-spiral electrically conductive track by a first dielectric material. A second spiral structure, located on a second metal layer, having a second outer-spiral electrically conductive track and a second inner-spiral electrically conductive track separated from the second outer-spiral electrically conductive track by a second dielectric material may also be provided. The first outer-spiral electrically conductive track may be electrically coupled to the second outer-spiral electrically conductive track and the first inner-spiral electrically conductive track may be electrically coupled to the second inner-spiral electrically conductive track. The first outer-spiral conductive track is laterally offset relative to the second outer-spiral conductive track and the first inner-spiral conductive track is laterally offset relative to the second inner-spiral conductive track.
摘要翻译：半导体电感器结构可以包括位于第一金属层上的第一螺旋结构，其具有第一外螺旋导电轨道和通过第一电介质与第一外螺旋导电轨道分开的第一内螺旋导电轨道材料。还可以提供位于第二金属层上的第二螺旋结构，其具有第二外螺旋导电轨道和通过第二介电材料与第二外螺旋导电轨道分离的第二内螺旋导电轨道。第一外螺旋导电轨道可以电耦合到第二外螺旋导电轨道，并且第一内螺旋导电轨道可以电耦合到第二内螺旋导电轨道。第一外螺旋导电轨道相对于第二外螺旋导电轨道横向偏移，并且第一内螺旋导电轨道相对于第二内螺旋导电轨道横向偏移。

10. 发明申请

US20150371758A1 HIGH EFFICIENCY ON-CHIP 3D TRANSFORMER STRUCTURE 审中-公开
公开(公告)号：US20150371758A1
公开(公告)日：2015-12-24
申请号：US14841399
申请日：2015-08-31
申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION
发明人： Robert L. Barry , Robert A. Groves , Venkata Nr. Vanukuru
IPC分类号： H01F27/28
CPC分类号： H01F27/2804 , H01F27/2871 , H01F2027/2809 , Y10T29/49071
摘要： An integrated circuit transformer structure includes at least two conductor groups stacked in parallel in different layers. A first spiral track is formed in the at least two conductor groups, the first spiral track included first turns of a first radius within each of the at least two conductor groups, and second turns of a second radius within each of the at least two conductor groups, the first and second turns being electrically connected. A second spiral track is formed in the at least two conductor groups, the second spiral track including third turns of a third radius within each of the at least two conductor groups and disposed in a same plane between the first and second turns in each of the at least two conductor groups.

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