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1. 发明申请

US20180269338A1 SILICON PHOTONICS INTEGRATION METHOD AND STRUCTURE 审中-公开
公开(公告)号：US20180269338A1
公开(公告)日：2018-09-20
申请号：US15980014
申请日：2018-05-15
申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION
发明人： Solomon Assefa , Tymon Barwicz , William M. Green , Marwan H. Khater , Jessie C. Rosenberg , Steven M. Shank
IPC分类号： H01L31/0203 , G02B6/42 , H01L31/153 , H01L31/02 , H01L31/18 , H01L31/0232
摘要： Approaches for silicon photonics integration are provided. A method includes: forming at least one encapsulating layer over and around a photodetector; thermally crystallizing the photodetector material after the forming the at least one encapsulating layer; and after the thermally crystallizing the photodetector material, forming a conformal sealing layer on the at least one encapsulating layer and over at least one device. The conformal sealing layer is configured to seal a crack in the at least one encapsulating layer. The photodetector and the at least one device are on a same substrate. The at least one device includes a complementary metal oxide semiconductor device or a passive photonics device.

2. 发明申请

US20170194513A1 SILICON PHOTONICS INTEGRATION METHOD AND STRUCTURE 有权
公开(公告)号：US20170194513A1
公开(公告)日：2017-07-06
申请号：US15463189
申请日：2017-03-20
申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION
发明人： Solomon Assefa , Tymon Barwicz , William M. Green , Marwan H. Khater , Jessie C. Rosenberg , Steven M. Shank
IPC分类号： H01L31/0203 , G02B6/42 , H01L31/02 , H01L31/153 , H01L31/0232 , H01L31/18
CPC分类号： H01L31/0203 , G02B6/00 , G02B6/12004 , G02B6/4253 , H01L21/0217 , H01L21/02271 , H01L21/02274 , H01L21/32053 , H01L21/84 , H01L27/1443 , H01L28/20 , H01L31/02019 , H01L31/02161 , H01L31/02327 , H01L31/153 , H01L31/18 , H01L31/1808 , H01L31/186 , H01L31/1872 , Y02E10/50 , Y02P70/521
摘要： Approaches for silicon photonics integration are provided. A method includes: forming at least one encapsulating layer over and around a photodetector; thermally crystallizing the photodetector material after the forming the at least one encapsulating layer; and after the thermally crystallizing the photodetector material, forming a conformal sealing layer on the at least one encapsulating layer and over at least one device. The conformal sealing layer is configured to seal a crack in the at least one encapsulating layer. The photodetector and the at least one device are on a same substrate. The at least one device includes a complementary metal oxide semiconductor device or a passive photonics device.

3. 发明申请

US20170016817A1 GAS SENSOR WITH INTEGRATED OPTICS AND REFERENCE CELL 有权
标题翻译：具有集成光学和参考电池的气体传感器
公开(公告)号：US20170016817A1
公开(公告)日：2017-01-19
申请号：US14799894
申请日：2015-07-15
申请人： International Business Machines Corporation
发明人： Tymon Barwicz , William M. Green , Yves C. Martin , Jason S. Orcutt , Lionel Tombez
IPC分类号： G01N21/39 , G01N21/3504
CPC分类号： G01N21/39 , G01J3/0218 , G01J3/0256 , G01J3/42 , G01J2003/423 , G01N21/3504 , G01N21/552 , G01N2021/399 , G01N2201/06113 , G01N2201/063 , G01N2201/08 , G02B6/12004 , G02B6/12007 , G02B6/122 , G02B2006/12138 , G02B2006/1215
摘要： A method of fabricating a gas sensor on a substrate and a gas sensor fabricated on a substrate that includes optical and electronic components are described. The method includes fabricating a laser to output light over a range of wavelengths within a waveguide, fabricating a splitter to split the light output by the laser to a reference waveguide and to a detection waveguide, fabricating a reference cell to house the reference waveguide and a reference gas. An output of the reference waveguide is coupled to a first optical detector and an output of the detection waveguide is coupled to a second optical detector to identify or quantify an ambient gas.
摘要翻译：描述了在衬底上制造气体传感器的方法和制造在包括光学和电子部件的衬底上的气体传感器。该方法包括制造激光器以在波导内的波长范围上输出光，制造分离器以将由激光器输出的光分成参考波导和检测波导，制造参考单元以容纳参考波导和参考气体参考波导的输出耦合到第一光学检测器，并且检测波导的输出耦合到第二光学检测器以识别或定量环境气体。

4. 发明授权

US09368653B1 Silicon photonics integration method and structure 有权
标题翻译：硅光子集成方法与结构
公开(公告)号：US09368653B1
公开(公告)日：2016-06-14
申请号：US14580564
申请日：2014-12-23
申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION
发明人： Solomon Assefa , Tymon Barwicz , William M. Green , Marwan H. Khater , Jessie C. Rosenberg , Steven M. Shank
IPC分类号： H01L21/02 , H01L31/0216 , H01L31/18 , H01L27/144 , H01L31/0203
CPC分类号： H01L31/0203 , G02B6/00 , G02B6/12004 , G02B6/4253 , H01L21/0217 , H01L21/02271 , H01L21/02274 , H01L21/32053 , H01L21/84 , H01L27/1443 , H01L28/20 , H01L31/02019 , H01L31/02161 , H01L31/02327 , H01L31/153 , H01L31/18 , H01L31/1808 , H01L31/186 , H01L31/1872 , Y02E10/50 , Y02P70/521
摘要： Approaches for silicon photonics integration are provided. A method includes: forming at least one encapsulating layer over and around a photodetector; thermally crystallizing the photodetector material after the forming the at least one encapsulating layer; and after the thermally crystallizing the photodetector material, forming a conformal sealing layer on the at least one encapsulating layer and over at least one device. The conformal sealing layer is configured to seal a crack in the at least one encapsulating layer. The photodetector and the at least one device are on a same substrate. The at least one device includes a complementary metal oxide semiconductor device or a passive photonics device.
摘要翻译：提供硅光子集成方法。一种方法包括：在光电检测器上方和周围形成至少一个封装层; 在形成所述至少一个封装层之后使所述光检测器材料热结晶; 并且在所述光电检测器材料热结晶之后，在所述至少一个封装层上并在至少一个器件上形成共形密封层。保形密封层构造成密封至少一个封装层中的裂纹。光电检测器和至少一个器件在相同的衬底上。所述至少一个器件包括互补金属氧化物半导体器件或无源光子器件。

5. 发明授权

US09304335B2 Integrated LDMOS devices for silicon photonics 有权
标题翻译：用于硅光子学的集成LDMOS器件
公开(公告)号：US09304335B2
公开(公告)日：2016-04-05
申请号：US14332886
申请日：2014-07-16
申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION
发明人： John J. Ellis-Monaghan , William M. Green , Michael J. Hauser , Edward W. Kiewra , Xuefeng Liu , Steven M. Shank
IPC分类号： H01L21/782 , H01L27/14 , H01L29/78 , G02F1/025 , H01L29/10 , H01L29/08 , H01L29/423 , H01L29/40 , H01L29/06 , H01L29/49 , H01L27/088 , H01L21/306 , H01L29/66 , H01L27/06 , G02B6/136 , G02B6/12
CPC分类号： G02F1/025 , G02B6/136 , G02B2006/12061 , G02B2006/12142 , G02B2006/12176 , H01L21/30604 , H01L27/0617 , H01L27/088 , H01L29/0634 , H01L29/0653 , H01L29/0696 , H01L29/0865 , H01L29/0882 , H01L29/1095 , H01L29/402 , H01L29/42356 , H01L29/4916 , H01L29/66681 , H01L29/66689 , H01L29/7823 , H01L29/7824 , H01L29/78624
摘要： A device includes a laterally diffused metal-oxide-semiconductor (LDMOS) device integrated with an optical modulator. An optical waveguide of the optical modulator includes a silicon-containing structure in a drift region of the LDMOS device.
摘要翻译：一种器件包括与光学调制器集成的横向扩散的金属氧化物半导体（LDMOS）器件。光调制器的光波导包括在LDMOS器件的漂移区域中的含硅结构。

6. 发明申请

US20150011040A1 DOUBLE LAYER INTERLEAVED P-N DIODE MODULATOR 有权
标题翻译：双层隔离型P-N二极管调制器
公开(公告)号：US20150011040A1
公开(公告)日：2015-01-08
申请号：US14492410
申请日：2014-09-22
申请人： International Business Machines Corporation
发明人： William M. Green , Jessie C. Rosenberg , Yurii Vlasov
IPC分类号： G02B6/134 , G02B6/12
CPC分类号： G02B6/1347 , G02B6/12 , G02B2006/12061 , G02F1/025 , G02F2201/063 , G02F2201/15 , G02F2202/06 , G02F2202/105
摘要： A method for fabricating an optical modulator includes forming n-type layer, a first oxide portion on a portion of the n-type layer, and a second oxide portion on a second portion of the n-type layer, patterning a first masking layer over the first oxide portion, portions of a planar surface of the n-type layer, and portions of the second oxide portion, implanting p-type dopants in the n-type layer to form a first p-type region and a second p-type region, removing the first masking layer, patterning a second masking layer over the first oxide portion, a portion of the first p-type region, and a portion of the n-type layer, and implanting p-type dopants in exposed portions of the n-type layer, exposed portions of the first p-type region, and regions of the n-type layer and the second p-type region disposed between the substrate and the second oxide portion.
摘要翻译：一种光学调制器的制造方法包括在n型层的一部分上形成n型层，第一氧化物部分和n型层的第二部分上的第二氧化物部分，将第一掩模层图案化第一氧化物部分，n型层的平面表面的部分和第二氧化物部分的部分，在n型层中注入p型掺杂剂以形成第一p型区和第二p型去除所述第一掩蔽层，在所述第一氧化物部分上形成第二掩模层，所述第一p型区域的一部分和所述n型层的一部分，以及在所述第一掩模层的暴露部分中注入p型掺杂剂 n型层，第一p型区域的露出部分以及设置在基板和第二氧化物部分之间的n型层和第二p型区域的区域。

7. 发明授权

US11085826B2 Fourier domain dynamic correction method for complex optical fringes in laser spectrometers 有权
公开(公告)号：US11085826B2
公开(公告)日：2021-08-10
申请号：US16773560
申请日：2020-01-27
申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION , The Trustees of Princeton University
发明人： Cheyenne Teng , Gerard Wysocki , Eric J. Zhang , William M. Green
IPC分类号： G01J3/453 , G01N21/3504 , G01J3/433 , G01J3/42
摘要： A method is provided for Fourier domain dynamic correction of optical fringes in a laser spectrometer. The method includes Fourier transforming a background spectrum contaminated with the optical fringes to obtain baseline fringes in a frequency domain. The method includes partitioning the baseline fringes in the frequency domain to obtain partitioned baseline fringes. The method includes reconstructing the partitioned baseline fringes as separate spectra. The method includes constructing a fitting model to approximate the background spectrum by assigning a first and a second free parameter to each of partitioned baseline fringe components to respectively allow for drift and amplitude adjustments during a fitting of the fitting model. The method includes applying the fitting model to a newly acquired spectrum to provide an interpretation of the newly acquired spectrum having a reduced influence of spectral contamination on concentration retrieval.

8. 发明授权

US10895682B1 Efficient photonic circuits for liquid-cooled high-density datacenters 有权
公开(公告)号：US10895682B1
公开(公告)日：2021-01-19
申请号：US16518131
申请日：2019-07-22
申请人： International Business Machines Corporation
发明人： Tymon Barwicz , Douglas M. Gill , William M. Green , Jason S. Orcutt , Jessie C. Rosenberg , Eugen Schenfeld , Chi Xiong
IPC分类号： G02B6/12 , G02B6/30 , H05K7/20 , H01S5/022
摘要： Photonic circuits are disclosed having an efficient optical power distribution network. Laser chips (InP) having different wavelengths are flip-chip assembled near the center of a silicon photonic chip. Each InP die has multiple optical lanes, but a given die has only one wavelength. Waveguides formed in the photonic chip are optically connected to the lanes, and fan out to form multiple waveguide sets, where each waveguide set has one of the waveguides from each of the different wavelengths, i.e., one waveguide from each InP die. The waveguide network is optimized to minimize the number of crossings that any given waveguide may have, and no waveguide having a particular wavelength crosses another waveguide of the same wavelength. The unique arrangements of light sources and waveguides allows the use of a smaller number of more intense laser sources, particularly in applications such as performance-optimized datacenters where liquid cooling systems may be leveraged.

9. 发明授权

US10605663B2 Fourier domain dynamic correction method for complex optical fringes in laser spectrometers 有权
公开(公告)号：US10605663B2
公开(公告)日：2020-03-31
申请号：US15981467
申请日：2018-05-16
申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION , The Trustees of Princeton University
发明人： Cheyenne Teng , Gerard Wysocki , Eric J. Zhang , William M. Green
IPC分类号： G01J3/453 , G01N21/3504 , G01J3/433 , G01J3/42
摘要： A method is provided for Fourier domain dynamic correction of optical fringes in a laser spectrometer. The method includes Fourier transforming a background spectrum contaminated with the optical fringes to obtain baseline fringes in a frequency domain. The method includes partitioning the baseline fringes in the frequency domain using bandpass filtering to obtain partitioned baseline fringes. The method includes reconstructing the partitioned baseline fringes as separate spectra using an inverse Fourier transform. The method includes constructing a fitting model to approximate the background spectrum by assigning a first and a second free parameter to each of partitioned baseline fringe components to respectively allow for drift and amplitude adjustments during a fitting of the fitting model. The method includes applying the fitting model to a newly acquired spectrum to provide an interpretation of the newly acquired spectrum having a reduced influence of spectral contamination on concentration retrieval.

10. 发明申请

US20190353525A1 FOURIER DOMAIN DYNAMIC CORRECTION METHOD FOR COMPLEX OPTICAL FRINGES IN LASER SPECTROMETERS 审中-公开
公开(公告)号：US20190353525A1
公开(公告)日：2019-11-21
申请号：US15981467
申请日：2018-05-16
申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION , The Trustees of Princeton University
发明人： Cheyenne Teng , Gerard Wysocki , Eric J. Zhang , William M. Green
IPC分类号： G01J3/453 , G01J3/433 , G01N21/3504
摘要： A method is provided for Fourier domain dynamic correction of optical fringes in a laser spectrometer. The method includes Fourier transforming a background spectrum contaminated with the optical fringes to obtain baseline fringes in a frequency domain. The method includes partitioning the baseline fringes in the frequency domain using bandpass filtering to obtain partitioned baseline fringes. The method includes reconstructing the partitioned baseline fringes as separate spectra using an inverse Fourier transform. The method includes constructing a fitting model to approximate the background spectrum by assigning a first and a second free parameter to each of partitioned baseline fringe components to respectively allow for drift and amplitude adjustments during a fitting of the fitting model. The method includes applying the fitting model to a newly acquired spectrum to provide an interpretation of the newly acquired spectrum having a reduced influence of spectral contamination on concentration retrieval.

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