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1. 发明申请

US20180348550A1 Method And System For A Low-Voltage Integrated Silicon High-Speed Modulator 审中-公开
公开(公告)号：US20180348550A1
公开(公告)日：2018-12-06
申请号：US16057508
申请日：2018-08-07
申请人： Luxtera, Inc.
发明人： Ali Ayazi , Kam-Yan Hon , Gianlorenzo Masini
IPC分类号： G02F1/025 , G02F1/225 , H04B10/516 , H04B10/50 , G02F1/01 , H04B10/54 , G02F1/21
CPC分类号： G02F1/025 , G02F1/0123 , G02F1/2255 , G02F1/2257 , G02F2001/212 , G02F2201/063 , H04B10/501 , H04B10/505 , H04B10/516 , H04B10/54
摘要： Methods and systems for a low-voltage integrated silicon high-speed modulator may include an optical modulator comprising first and second optical waveguides and two optical phase shifters, where each of the two optical phase shifters may comprise a p-n junction with a horizontal section and a vertical section and an optical signal is communicated to the first optical waveguide. A portion of the optical signal may then be coupled to the second optical waveguide. A phase of at least one optical signal in the waveguides may be modulated utilizing the optical phase shifters. A portion of the phase modulated optical signals may be coupled between the two waveguides, thereby generating two output signals from the modulator. A modulating signal may be applied to the phase shifters which may include a reverse bias.

2. 发明申请

US20180307063A1 FAR FIELD SPATIAL MODULATION 审中-公开
公开(公告)号：US20180307063A1
公开(公告)日：2018-10-25
申请号：US15955102
申请日：2018-04-17
申请人： MACOM Technology Solutions Holdings, Inc.
发明人： Cristian Stagarescu
IPC分类号： G02F1/025
CPC分类号： G02F1/025 , G02F1/21 , G02F1/2257 , G02F1/293 , G02F1/3138 , G02F2001/0155 , G02F2201/063 , G02F2202/101 , G02F2202/102 , G02F2203/50 , H01S5/021 , H01S5/0265 , H01S5/0624 , H01S5/06243 , H01S5/1007 , H01S5/1032 , H01S5/22 , H01S5/4068 , H01S2301/18
摘要： Embodiments of an optical modulator device are described. An example optical modulator includes a ridge laser configured to emit light, a ridge waveguide configured to transition between a transparent state and an absorbing state, and a waveguide tap formed between the ridge laser and the ridge waveguide. The waveguide tap is configured to optically couple a fraction of light generated in the ridge laser to the ridge waveguide. In the transparent state of the ridge waveguide, the ridge waveguide is configured to output the fraction of light for interference with light emitted from the ridge laser. In the absorbing state of the ridge waveguide, the ridge waveguide is configured to absorb the fraction of light. Depending upon whether the fraction of light is output from the ridge waveguide for interference, the output power of the laser seen at the far-field of the optical modulator can be modulated for data communications.

3. 发明申请

US20180259798A1 DIRECT-DRIVE POLYMER MODULATOR METHODS OF FABRICATING AND MATERIALS THEREFOR 审中-公开
公开(公告)号：US20180259798A1
公开(公告)日：2018-09-13
申请号：US15899312
申请日：2018-02-19
申请人： Lightwave Logic Inc.
发明人： Richard Becker , Frederick J. Leonberger , Michael Lebby
IPC分类号： G02F1/065 , G02F1/225
CPC分类号： G02F1/065 , G02F1/225 , G02F2001/212 , G02F2201/063 , G02F2202/022
摘要： A direct-drive polymer modulator including a platform, a multilayer waveguide formed in/on the platform, the waveguide including a bottom cladding layer, an electro-optic polymer core and a top cladding layer, and at least a portion of the waveguide forming a direct-drive polymer modulator.

4. 发明申请

US20180175585A1 ELECTRICALLY PUMPED PHOTONIC CRYSTAL NANOLASER 审中-公开
公开(公告)号：US20180175585A1
公开(公告)日：2018-06-21
申请号：US15739339
申请日：2015-06-26
申请人： STMicroelectronics (Crolles 2) SAS , Centre National de la Recherche Scientifique , Universite Paris Diderot
发明人： Guillaume Crosnier , Fabrice Raineri , Rama Raj , Paul Monnier
IPC分类号： H01S5/042 , H01S5/026 , H01S5/22 , H01S5/343 , H01S5/04 , B82Y20/00 , H01S5/10
CPC分类号： H01S5/0425 , B82Y20/00 , G02F2201/063 , G02F2202/32 , H01S5/026 , H01S5/0422 , H01S5/1032 , H01S5/105 , H01S5/1067 , H01S5/22 , H01S5/34373
摘要： A semiconductor nanolaser includes a rib formed by a stack of layers, in which stack central layers (33, 34, 35) forming an assembly of quantum wells are placed between a lower layer (32) of a first conductivity type and an upper layer (36) of a second conductivity type. Holes (42) are drilled right through the thickness of the rib, wherein the lower layer includes first extensions (38, 40) that extend laterally on either side of the rib, and that are coated with first metallizations (42, 44) that are located a distance away from the rib. The stack includes second extensions (45, 46) that extend longitudinally beyond said rib, and that are coated with second metallizations (47, 48).

5. 发明申请

US20170155452A1 OPTICAL MODULATORS 审中-公开
公开(公告)号：US20170155452A1
公开(公告)日：2017-06-01
申请号：US15430314
申请日：2017-02-10
申请人： ROCKLEY PHOTONICS LIMITED
发明人： Amit Singh Nagra , Hooman Abediasl , Joyce Kai See Poon , Zheng Yong
IPC分类号： H04B10/54 , G02F1/01 , H04B10/524 , G02F1/025
CPC分类号： H04B10/541 , G02F1/0121 , G02F1/0147 , G02F1/015 , G02F1/025 , G02F2001/0157 , G02F2201/063 , G02F2201/16 , H04B10/524
摘要： An optoelectronic device. The optoelectronic device operable to provide a PAM-N modulated output, the device comprising: M optical modulators, M being an integer greater than 1, the M optical modulators being arranged in a cascade, the device being configured to operate in N distinct transmittance states, as a PAM-N modulator, wherein, in each transmittance state of the N distinct transmittance states, each of the M optical modulators has applied to it a respective control voltage equal to one of: a first voltage or a second voltage.

6. 发明申请

US20170123239A1 Method And System For A Low-Voltage Integrated Silicon High-Speed Modulator 审中-公开
公开(公告)号：US20170123239A1
公开(公告)日：2017-05-04
申请号：US15402400
申请日：2017-01-10
申请人： Luxtera, Inc.
发明人： Ali Ayazi , Kam-Yan Hon , Gianlorenzo Masini
IPC分类号： G02F1/025 , H04B10/516 , H04B10/50 , G02F1/01
CPC分类号： G02F1/025 , G02F1/0123 , G02F1/2255 , G02F1/2257 , G02F2001/212 , G02F2201/063 , H04B10/501 , H04B10/505 , H04B10/516 , H04B10/54
摘要： Methods and systems for a low-voltage integrated silicon high-speed modulator may include an optical modulator comprising first and second optical waveguides and two optical phase shifters, where each of the two optical phase shifters may comprise a p-n junction with a horizontal section and a vertical section and an optical signal is communicated to the first optical waveguide. A portion of the optical signal may then be coupled to the second optical waveguide. A phase of at least one optical signal in the waveguides may be modulated utilizing the optical phase shifters. A portion of the phase modulated optical signals may be coupled between the two waveguides, thereby generating two output signals from the modulator. A modulating signal may be applied to the phase shifters which may include a reverse bias.

7. 发明申请

US20160313577A1 DUAL-JUNCTION OPTICAL MODULATOR AND THE METHOD TO MAKE THE SAME 审中-公开
标题翻译：双功能光学调制器及其制作方法
公开(公告)号：US20160313577A1
公开(公告)日：2016-10-27
申请号：US14694834
申请日：2015-04-23
申请人： LaXense Inc.
发明人： Xiaochen Sun , Ningning Feng
IPC分类号： G02F1/025
CPC分类号： G02F1/025 , G02F2001/0151 , G02F2201/063 , G02F2202/104 , G02F2203/50
摘要： An optical device includes a substrate and an optical rib waveguide structure formed of a slab and a rib. A vertically-oriented P-N-P or N-P-N dual-junction diode is formed inside the rib waveguide, including a first doped region, a second doped region and a third doped region electrically connected to the first doped region, where two P-N junctions are formed at the boundaries of the first and the second doped regions, and the second and the third doped regions, respectively. The depletion regions of the two junctions are substantially in the center of a guided optical mode propagating at the core region through the rib waveguide. The optical device further includes a first metal contact and a second metal contact in electrical contact with the first doped region and the second doped region, respectively.
摘要翻译：光学装置包括基板和由平板和肋形成的光学波导结构。在肋波导内形成垂直取向的PNP或NPN双结二极管，包括电连接到第一掺杂区的第一掺杂区，第二掺杂区和第三掺杂区，其中在边界处形成两个PN结的第一和第二掺杂区域，以及第二和第三掺杂区域。两个结的耗尽区基本上处于通过肋波导在芯区域传播的引导光模的中心。光学装置还包括分别与第一掺杂区域和第二掺杂区域电接触的第一金属触点和第二金属触点。

8. 发明授权

US09134553B2 Optical modulator and method for manufacturing the same 有权
标题翻译：光调制器及其制造方法
公开(公告)号：US09134553B2
公开(公告)日：2015-09-15
申请号：US13634364
申请日：2011-03-10
申请人： Eu-Jin Andy Lim , Kah Wee Ang , Qing Fang , Tsung-Yang Jason Liow , Mingbin Yu , Guo Qiang Patrick Lo
发明人： Eu-Jin Andy Lim , Kah Wee Ang , Qing Fang , Tsung-Yang Jason Liow , Mingbin Yu , Guo Qiang Patrick Lo
IPC分类号： G02F1/035 , G02F1/03 , G02F1/025 , G02F1/015
CPC分类号： G02F1/025 , G02F2001/0157 , G02F2201/063
摘要： An optical modulator and a method for manufacturing an optical modulator are provided. The optical modulator includes a first waveguide, a second waveguide, a modulating portion connected between the first waveguide and the second waveguide, the modulating portion being configured to receive an input signal from the first waveguide, to modulate the input signal and to supply a corresponding modulated input signal as an output signal to the second waveguide, wherein the modulating portion includes a semiconductor substrate, one end thereof being coupled to the first waveguide, and a corresponding opposite end thereof being coupled to the second waveguide, a Germanium rib provided on the substrate such that the input signal propagates through the Germanium rib along a longitudinal axis thereof, and a first electrode and a second electrode respectively provided on the substrate, wherein the Germanium rib is provided between the first electrode and the second electrode, and wherein the first electrode and the second electrode are configured to apply an electrical field to the Germanium rib in order to modulate the input signal propagating through the Germanium rib.
摘要翻译：提供一种光学调制器及其制造方法。光调制器包括第一波导，第二波导，连接在第一波导和第二波导之间的调制部分，调制部分被配置为接收来自第一波导的输入信号，以调制输入信号并提供对应的调制输入信号作为到第二波导的输出信号，其中调制部分包括半导体衬底，其一端耦合到第一波导，并且其对应的相对端耦合到第二波导，设置在第二波导上的锗肋基板，使得输入信号沿其纵向轴线传播通过锗肋，以及分别设置在基板上的第一电极和第二电极，其中，所述锗肋设置在第一电极和第二电极之间，并且其中第一电极和第二电极被配置为向第一电极施加电场 e锗肋，以调制通过锗肋传播的输入信号。

9. 发明申请

US20150160483A1 Electro-optical device comprising a ridge waveguide and a PN junction and method of manufacturing said device 有权
标题翻译：包括脊波导和PN结的电光装置及其制造方法
公开(公告)号：US20150160483A1
公开(公告)日：2015-06-11
申请号：US14588603
申请日：2015-01-02
申请人： David THOMSON , Frederic GARDES , Graham REED
发明人： David THOMSON , Frederic GARDES , Graham REED
IPC分类号： G02F1/025 , G02B6/136 , G02B6/134
CPC分类号： G02F1/025 , G02B6/134 , G02B6/1347 , G02B6/136 , G02B2006/12173 , G02F2001/0152 , G02F2201/063
摘要： An electro-optic device, comprising an insulating layer and a layer light-carrying material adjacent the insulating layer. The layer of light-carrying material, such as silicon, comprises a first doped region of a first type and a second doped region of a second, different type abutting the first doped region to form a pn junction. The first doped region has a first thickness at the junction, and the second doped region has a second thickness at the junction, the first thickness being greater than the second thickness, defining a waveguide rib in the first doped region for propagating optical signals. Since the position of the junction coincides with the sidewall of the waveguide rib a self-aligned process can be used in order to simplify the fabrication process and increase yield.
摘要翻译：一种电光器件，包括绝缘层和邻近绝缘层的层轻载体材料。载光材料层，例如硅，包括第一类型的第一掺杂区域和与第一掺杂区域邻接以形成pn结的第二不同类型的第二掺杂区域。所述第一掺杂区在所述结处具有第一厚度，并且所述第二掺杂区在所述结处具有第二厚度，所述第一厚度大于所述第二厚度，在所述第一掺杂区中限定用于传播光信号的波导肋。由于结的位置与波导肋的侧壁重合，所以可以使用自对准的工艺来简化制造工艺并提高产量。

10. 发明授权

US08958678B2 Electro-optice device comprising a ridge waveguide and a PN junction and method of manufacturing said device 有权
标题翻译：包括脊波导和PN结的电光装置及其制造方法
公开(公告)号：US08958678B2
公开(公告)日：2015-02-17
申请号：US13574576
申请日：2011-01-20
申请人： David Thomson , Frederic Gardes , Graham Reed
发明人： David Thomson , Frederic Gardes , Graham Reed
IPC分类号： G02B6/10 , G02F1/025 , G02B6/134 , G02F1/015
CPC分类号： G02F1/025 , G02B6/134 , G02B6/1347 , G02B6/136 , G02B2006/12173 , G02F2001/0152 , G02F2201/063
摘要： An electro-optic device, comprising an insulating layer and a layer of light-carrying material adjacent the insulating layer. The layer of light-carrying material, such as silicon, comprises a first doped region of a first type and a second doped region of a second, different type abutting the first doped region to form a pn junction. The first doped region has a first thickness at the junction, and the second doped region has a second thickness at the junction, the first thickness being greater than the second thickness, defining a waveguide rib in the first doped region for propagating optical signals. Since the position of the junction coincides with the sidewall of the waveguide rib a self-aligned process can be used in order to simplify the fabrication process and increase yield.
摘要翻译：一种电光器件，包括绝缘层和邻近绝缘层的轻载体材料层。载光材料层，例如硅，包括第一类型的第一掺杂区域和与第一掺杂区域邻接以形成pn结的第二不同类型的第二掺杂区域。所述第一掺杂区在所述结处具有第一厚度，并且所述第二掺杂区在所述结处具有第二厚度，所述第一厚度大于所述第二厚度，在所述第一掺杂区中限定用于传播光信号的波导肋。由于结的位置与波导肋的侧壁重合，所以可以使用自对准的工艺来简化制造工艺并提高产量。

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