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1. 发明授权

US08715414B2 Process for producing Si(1-v-w-x)CwAlxNv base material, process for producing epitaxial wafer, Si(1-v-w-x)CwAlxNv base material, and epitaxial wafer 有权
标题翻译： Si（1-v-w-x）CwAlxNv基材的制造方法，外延晶片的制造方法，Si（1-v-w-x）CwAlxNv母材，外延片
公开(公告)号：US08715414B2
公开(公告)日：2014-05-06
申请号：US12989036
申请日：2009-04-17
申请人： Issei Satoh , Michimasa Miyanaga , Shinsuke Fujiwara , Hideaki Nakahata
发明人： Issei Satoh , Michimasa Miyanaga , Shinsuke Fujiwara , Hideaki Nakahata
IPC分类号： C30B29/38
CPC分类号： C30B29/36 , C23C4/185 , C23C16/34 , C30B23/02 , C30B25/02 , C30B29/403 , H01L21/0237 , H01L21/02378 , H01L21/02381 , H01L21/02389 , H01L21/0242 , H01L21/02529 , H01L21/0254 , H01L21/0262 , H01L21/02631
摘要： There are provided a Si(1-v-w-x)CwAlxNv substrate that achieves high crystallinity and low costs, an epitaxial wafer, and manufacturing methods thereof.A method for manufacturing a Si(1-v-w-x)CwAlxNv substrate according to the present invention includes the steps of preparing a different type of substrate 11 and growing a Si(1-v-w-x)CwAlxNv layer having a main surface on the different type of substrate 11. The component ratio x+v at the main surface of the Si(1-v-w-x)CwAlxNv layer is 0
摘要翻译：提供了实现高结晶度和低成本的Si（1-v-w-x）C w Al x N v衬底，外延晶片及其制造方法。根据本发明的用于制造Si（1-vwx）CwAlxNv衬底的方法包括以下步骤：制备不同类型的衬底11并在不同类型的衬底上生长具有主表面的Si（1-vwx）C w Al x N v层 Si（1-vwx）CwAlxNv层的主表面的分量比x + v为0

2. 发明授权

US08540817B2 Method of manufacturing a Si(1-v-w-x)CwAlxNv substrate, method of manufacturing an epitaxial wafer, Si(1-v-w-x)CwAlxNv substrate, and epitaxial wafer 失效
标题翻译： Si（1-v-w-x）C w Al x N v衬底的制造方法，外延晶片的制造方法，Si（1-v-w-x）C w Al x N v衬底和外延晶片
公开(公告)号：US08540817B2
公开(公告)日：2013-09-24
申请号：US12989015
申请日：2009-04-17
申请人： Issei Satoh , Michimasa Miyanaga , Shinsuke Fujiwara , Hideaki Nakahata
发明人： Issei Satoh , Michimasa Miyanaga , Shinsuke Fujiwara , Hideaki Nakahata
IPC分类号： C30B23/00 , C30B25/00 , C30B28/12 , C30B28/14
CPC分类号： C30B23/00 , C23C14/0617 , C23C14/28 , C30B25/00 , C30B25/02 , C30B28/12 , C30B28/14 , C30B29/36 , C30B29/38 , C30B29/403 , H01L21/02381 , H01L21/02439 , H01L21/02447 , H01L21/02458 , H01L21/02488 , H01L21/02507 , H01L21/02513 , H01L21/0254 , H01L21/02617 , Y10T428/24471
摘要： There are provided a method for manufacturing a Si(1-v-w-x)CwAlxNv substrate having a reduced number of cracks and high processability, a method for manufacturing an epitaxial wafer, a Si(1-v-w-x)CwAlxNv substrate, and an epitaxial wafer.A method for manufacturing a Si(1-v-w-x)CwAlxNv substrate 10a includes the following steps. First, a Si substrate 11 is prepared. A Si(1-v-w-x)CwAlxNv layer (0
摘要翻译：提供了具有减少的裂纹数和加工性能降低的Si（1-v-w-x）C w Al x N v衬底的制造方法，外延晶片的制造方法，Si（1-v-w-x）C w Al x N v衬底和外延晶片。制造Si（1-v-w-x）C w Al x N v衬底10a的方法包括以下步骤。首先，准备Si基板11。然后在Si衬底上，在低于1℃的温度下生长Si（1-vwx）C w Al x N v层（0

3. 发明申请

US20110042788A1 PROCESS FOR PRODUCING Si(1-v-w-x)CwAlxNv BASE MATERIAL, PROCESS FOR PRODUCING EPITAXIAL WAFER, SI(1-v-w-x)CwAlxNv BASE MATERIAL, AND EPITAXIAL WAFER 有权
标题翻译：用于生产Si（1-v-w-x）CwAlxNv基材的方法，用于生产外延晶体的方法，SI（1-v-w-x）C w Al x N v基材和外延晶体
公开(公告)号：US20110042788A1
公开(公告)日：2011-02-24
申请号：US12989039
申请日：2009-04-17
申请人： Issei Satoh , Michimasa Miyanaga , Shinsuke Fujiwara , Hideaki Nakahata
发明人： Issei Satoh , Michimasa Miyanaga , Shinsuke Fujiwara , Hideaki Nakahata
IPC分类号： H01L29/24 , H01L21/36 , H01L29/20
CPC分类号： H01L29/267 , C23C14/0617 , C23C14/28 , C30B23/02 , C30B29/36 , C30B29/38 , C30B29/403 , H01L21/02381 , H01L21/02447 , H01L21/02458 , H01L21/02529 , H01L21/0254 , H01L21/0262 , H01L21/02631
摘要： Si(1-v-w-x)CwAlxNv crystals in a mixed crystal state are formed. A method for manufacturing an easily processable Si(1-v-w-x)CwAlxNv substrate, a method for manufacturing an epitaxial wafer, a Si(1-v-w-x)CwAlxNv substrate, and an epitaxial wafer are provided.A method for manufacturing a Si(1-v-w-x)CwAlxNv substrate 10a includes the following steps. First, a Si substrate 11 is prepared. A Si(1-v-w-x)CwAlxNv layer 12 (0
摘要翻译：形成混晶的Si（1-v-w-x）C w Al x N v晶体。提供了一种用于制造易加工的Si（1-v-w-x）C w Al x N v衬底的方法，制造外延晶片的方法，Si（1-v-w-x）C w Al x N v衬底和外延晶片。制造Si（1-v-w-x）C w Al x N v衬底10a的方法包括以下步骤。首先，准备Si基板11。然后在Si衬底11上生长Si（1-vwx）C w Al x N v层12（0

4. 发明申请

US20110039071A1 METHOD OF MANUFACTURING A Si(1-v-w-x)CwAlxNv SUBSTRATE, METHOD OF MANUFACTURING AN EPITAXIAL WAFER, Si(1-v-w-x)CwAlxNv SUBSTRATE, AND EPITAXIAL WAFER 失效
标题翻译：制备Si（1-v-w-x）CwAlxNv基板的方法，制造外延晶体的方法，Si（1-v-w-x）CwAlxNv基板和外延晶体
公开(公告)号：US20110039071A1
公开(公告)日：2011-02-17
申请号：US12989015
申请日：2009-04-17
申请人： Issei Satoh , Michimasa Miyanaga , Shinsuke Fujiwara , Hideaki Nakahata
发明人： Issei Satoh , Michimasa Miyanaga , Shinsuke Fujiwara , Hideaki Nakahata
IPC分类号： B32B3/00 , C30B23/06 , C30B25/02 , C23C14/34
CPC分类号： C30B23/00 , C23C14/0617 , C23C14/28 , C30B25/00 , C30B25/02 , C30B28/12 , C30B28/14 , C30B29/36 , C30B29/38 , C30B29/403 , H01L21/02381 , H01L21/02439 , H01L21/02447 , H01L21/02458 , H01L21/02488 , H01L21/02507 , H01L21/02513 , H01L21/0254 , H01L21/02617 , Y10T428/24471
摘要： There are provided a method for manufacturing a Si(1-v-w-x)CwAlxNv substrate having a reduced number of cracks and high processibility, a method for manufacturing an epitaxial wafer, a Si(1-v-w-x)CwAlxNv substrate, and an epitaxial wafer.A method for manufacturing a Si(1-v-w-x)CwAlxNv substrate 10a includes the following steps. First, a Si substrate 11 is prepared. A Si(1-v-w-x)CwAlxNv layer (0
摘要翻译：提供了一种制造具有减少的裂纹数量和高加工性的Si（1-v-w-x）C w Al x N v衬底的方法，制造外延晶片的方法，Si（1-v-w-x）C w Al x N v衬底和外延晶片。制造Si（1-v-w-x）C w Al x N v衬底10a的方法包括以下步骤。首先，准备Si基板11。然后在Si衬底上，在低于1℃的温度下生长Si（1-vwx）C w Al x N v层（0

5. 发明申请

US20110031534A1 PROCESS FOR PRODUCING Si(1-v-w-x)CwAlxNv BASE MATERIAL, PROCESS FOR PRODUCING EPITAXIAL WAFER, Si(1-v-w-x)CwAlxNv BASE MATERIAL, AND EPITAXIAL WAFER 有权
标题翻译：用于生产Si（1-v-w-x）CwAlxNv基材的方法，用于生产外延晶体的方法，Si（1-v-w-x）CwAlxNv基材和外延晶体
公开(公告)号：US20110031534A1
公开(公告)日：2011-02-10
申请号：US12989036
申请日：2009-04-17
申请人： Issei Satoh , Michimasa Miyanaga , Shinsuke Fujiwara , HIdeaki Nakahata
发明人： Issei Satoh , Michimasa Miyanaga , Shinsuke Fujiwara , HIdeaki Nakahata
IPC分类号： H01L29/205 , H01L29/20 , C30B23/00 , C30B23/02
CPC分类号： C30B29/36 , C23C4/185 , C23C16/34 , C30B23/02 , C30B25/02 , C30B29/403 , H01L21/0237 , H01L21/02378 , H01L21/02381 , H01L21/02389 , H01L21/0242 , H01L21/02529 , H01L21/0254 , H01L21/0262 , H01L21/02631
摘要： There are provided a Si(1-v-w-x)CwAlxNv substrate that achieves high crystallinity and low costs, an epitaxial wafer, and manufacturing methods thereof.A method for manufacturing a Si(1-v-w-x)CwAlxNv substrate according to the present invention includes the steps of preparing a different type of substrate 11 and growing a Si(1-v-w-xCwAlxNv layer having a main surface on the different type of substrate 11. The component ratio x+v at the main surface of the Si(1-v-w-x)CwAlxNv layer is 0
摘要翻译：提供了实现高结晶度和低成本的Si（1-v-w-x）C w Al x N v衬底，外延晶片及其制造方法。根据本发明的用于制造Si（1-vwx）C w Al x N v衬底的方法包括以下步骤：制备不同类型的衬底11并生长具有不同类型衬底上的主表面的Si（1-vw-xCwAlxNv层） Si（1-vwx）CwAlxNv层的主表面的分量比x + v为0

6. 发明授权

US08357597B2 Process for producing Si(1-v-w-x)CwAlxNv base material, process for producing epitaxial wafer, Si(1-v-w-x)CwAlxNv base material, and epitaxial wafer 有权
标题翻译： Si（1-v-w-x）CwAlxNv基材的制造方法，外延晶片的制造方法，Si（1-v-w-x）CwAlxNv母材，外延片
公开(公告)号：US08357597B2
公开(公告)日：2013-01-22
申请号：US12989039
申请日：2009-04-17
申请人： Issei Satoh , Michimasa Miyanaga , Shinsuke Fujiwara , Hideaki Nakahata
发明人： Issei Satoh , Michimasa Miyanaga , Shinsuke Fujiwara , Hideaki Nakahata
IPC分类号： H01L21/20
CPC分类号： H01L29/267 , C23C14/0617 , C23C14/28 , C30B23/02 , C30B29/36 , C30B29/38 , C30B29/403 , H01L21/02381 , H01L21/02447 , H01L21/02458 , H01L21/02529 , H01L21/0254 , H01L21/0262 , H01L21/02631
摘要： Si(1-v-w-x)CwAlxNv crystals in a mixed crystal state are formed. A method for manufacturing an easily processable Si(1-v-w-x)CwAlxNv substrate, a method for manufacturing an epitaxial wafer, a Si(1-v-w-x)CwAlxNv substrate, and an epitaxial wafer are provided. A method for manufacturing a Si(1-v-w-x)CwAlxNv substrate 10a includes the following steps. First, a Si substrate 11 is prepared. A Si(1-v-w-x)CwAlxNv layer 12 (0
摘要翻译：形成混晶的Si（1-v-w-x）C w Al x N v晶体。提供了一种用于制造易加工的Si（1-v-w-x）C w Al x N v衬底的方法，制造外延晶片的方法，Si（1-v-w-x）C w Al x N v衬底和外延晶片。制造Si（1-v-w-x）C w Al x N v衬底10a的方法包括以下步骤。首先，准备Si基板11。然后在Si衬底11上生长Si（1-vwx）C w Al x N v层12（0

7. 发明授权

US08363326B2 AlxGa(1-x)N single crystal, method of producing AlxGa(1-x)N single crystal, and optical lens 失效
标题翻译： Al x Ga（1-x）N单晶，Al x Ga（1-x）N单晶的制造方法，光学透镜
公开(公告)号：US08363326B2
公开(公告)日：2013-01-29
申请号：US13001723
申请日：2009-06-25
申请人： Satoshi Arakawa , Takashi Sakurada , Yoshiyuki Yamamoto , Issei Satoh , Keisuke Tanizaki , Hideaki Nakahata , Naho Mizuhara , Michimasa Miyanaga
发明人： Satoshi Arakawa , Takashi Sakurada , Yoshiyuki Yamamoto , Issei Satoh , Keisuke Tanizaki , Hideaki Nakahata , Naho Mizuhara , Michimasa Miyanaga
IPC分类号： G02B1/02
CPC分类号： G02B1/02 , C30B23/025 , C30B29/403 , C30B29/406 , G02B3/00 , G02B13/143 , Y10T428/21 , Y10T428/24355
摘要： A method of producing an AlxGa(1-x)N (0
摘要翻译：制造本发明的Al x Ga（1-x）N（0

8. 发明申请

US20110171462A1 Nitride Semiconductor Crystal Manufacturing Apparatus, Nitride Semiconductor Crystal Manufacturing Method, and Nitride Semiconductor Crystal 失效
标题翻译：氮化物半导体晶体制造装置，氮化物半导体晶体制造方法和氮化物半导体晶体
公开(公告)号：US20110171462A1
公开(公告)日：2011-07-14
申请号：US13060276
申请日：2010-01-20
申请人： Issei Satoh , Michimasa Miyanaga , Yoshiyuki Yamamoto , Hideaki Nakahata
发明人： Issei Satoh , Michimasa Miyanaga , Yoshiyuki Yamamoto , Hideaki Nakahata
IPC分类号： C01B21/072 , C23C16/448 , C23C16/34 , C30B23/00 , B32B5/00
CPC分类号： C30B23/066 , C30B29/403
摘要： Affords nitride semiconductor crystal manufacturing apparatuses that are durable and that are for manufacturing nitride semiconductor crystal in which the immixing of impurities from outside the crucible is kept under control, and makes methods for manufacturing such nitride semiconductor crystal, and the nitride semiconductor crystal itself, available.A nitride semiconductor crystal manufacturing apparatus (100) is furnished with a crucible (101), a heating unit (125), and a covering component (110). The crucible (101) is where, interiorly, source material (17) is disposed. The heating unit (125) is disposed about the outer periphery of the crucible (101), where it heats the crucible (101) interior. The covering component (110) is arranged in between the crucible (101) and the heating unit (125). The covering component (110) includes a first layer (111) formed along the side opposing the crucible (101), and made of a metal whose melting point is higher than that of the source material (17), and a second layer (112) formed along the outer periphery of the first layer (111), and made of a carbide of the metal that constitutes the first layer (111).
摘要翻译：使氮化物半导体晶体制造装置耐久，并且用于制造氮化物半导体晶体，其中坩埚外部杂质的固定被控制，并且制造这种氮化物半导体晶体的方法和氮化物半导体晶体本身可用。氮化物半导体晶体制造装置（100）具有坩埚（101），加热单元（125）和覆盖部件（110）。坩埚（101）内部设置有源材料（17）。加热单元（125）围绕坩埚（101）的外周设置，其中坩埚（101）内部加热。覆盖部件（110）布置在坩埚（101）和加热单元（125）之间。覆盖部件（110）包括沿与坩埚（101）相对的一侧形成的由熔点高于源材料（17）的金属制成的第一层（111）和第二层（112））沿着第一层（111）的外周形成，并且由构成第一层（111）的金属的碳化物构成。

9. 发明授权

US07995267B2 Wavelength converter manufacturing method and wavelength converter 有权
标题翻译：波长转换器制造方法和波长转换器
公开(公告)号：US07995267B2
公开(公告)日：2011-08-09
申请号：US12510267
申请日：2009-07-28
申请人： Issei Satoh , Michimasa Miyanaga , Yoshiyuki Yamamoto , Hideaki Nakahata
发明人： Issei Satoh , Michimasa Miyanaga , Yoshiyuki Yamamoto , Hideaki Nakahata
IPC分类号： G02F1/35
CPC分类号： G02F1/3558 , G02F1/353 , G02F2001/3548
摘要： Affords a wavelength converter manufacturing method and a wavelength converter whereby the transmissivity can be improved. A method of manufacturing a wavelength converter (10a) is provided with the following steps. At first, crystal is grown. Then a first crystal (11) and a second crystal (12) are formed by sectioning the crystal into two or more in such a way that the domains are the reverse of each other. The first and second crystals (11) and (12) are then interlocked in such a way that a domain inversion structure in which the polar directions of the first and second crystals (11) and (12) periodically reverse along an optical waveguide (13) is formed, and the domain inversion structure satisfies quasi-phase-matching conditions for an incoming beam (101).
摘要翻译：提供一种波长转换器制造方法和波长转换器，由此能够提高透射率。制造波长转换器（10a）的方法具有以下步骤。起初，晶体生长。然后通过将晶体分成两个或更多个使得畴相反的方式形成第一晶体（11）和第二晶体（12）。然后将第一和第二晶体（11）和（12）互锁，使得第一和第二晶体（11）和（12）的极性方向沿着光波导（13）周期性地反转的畴反转结构），域反转结构满足入射光束（101）的准相位匹配条件。

10. 发明申请

US20110104438A1 AlxGa(1-x)N SINGLE CRYSTAL, METHOD OF PRODUCING AlxGa(1-x)N SINGLE CRYSTAL, AND OPTICAL COMPONENT 审中-公开
标题翻译： Al x Ga（1-x）N单晶，生产Al x Ga（1-x）N单晶和光学元件的方法
公开(公告)号：US20110104438A1
公开(公告)日：2011-05-05
申请号：US13001749
申请日：2009-06-25
申请人： Satoshi Arakawa , Takashi Sakurada , Yoshiyuki Yamamoto , Issei Satoh , Keisuke Tanizaki , Hideaki Nakahata , Naho Mizuhara , Michimasa Miyanaga
发明人： Satoshi Arakawa , Takashi Sakurada , Yoshiyuki Yamamoto , Issei Satoh , Keisuke Tanizaki , Hideaki Nakahata , Naho Mizuhara , Michimasa Miyanaga
IPC分类号： C30B29/38 , C30B23/02 , C30B23/06 , B32B3/00 , B32B5/00 , C09K3/00
CPC分类号： G02B1/02 , C30B23/025 , C30B29/403 , C30B29/406 , G02B13/143 , Y10T428/24355 , Y10T428/2973
摘要： A method of producing an AlxGa(1-x)N (0
摘要翻译：制造Al x Ga（1-x）N（0

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