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1. 发明授权

US08791034B2 Chemical vapor deposition process for aluminum silicon nitride 有权
标题翻译：氮化硅铝化学气相沉积工艺
公开(公告)号：US08791034B2
公开(公告)日：2014-07-29
申请号：US13380144
申请日：2010-06-28
申请人： James R. Shealy , Richard Brown
发明人： James R. Shealy , Richard Brown
IPC分类号： H01L21/318 , H01L21/443
CPC分类号： H01L21/318 , C23C16/34 , H01L21/02145 , H01L21/02271
摘要： A chemical vapor deposition method for forming an aluminum-silicon nitride layer upon a substrate uses an aluminum precursor, a silicon precursor and a nitrogen precursor under chemical vapor deposition conditions to deposit the aluminum-silicon nitride layer upon the substrate. The aluminum-silicon nitride layer has an index of refraction interposed between silicon nitride and aluminum nitride. The aluminum-silicon nitride layer also has a bandgap from about 4.5 to about 6 eV and a permittivity from about 6×10^-11 to about 8×10^-11 F/m. The aluminum-silicon nitride layer may be further thermally annealed to reduce a hydrogen content of the aluminum-silicon nitride layer.
摘要翻译：用于在基板上形成铝 - 氮化硅层的化学气相沉积方法在化学气相沉积条件下使用铝前体，硅前驱体和氮前体，以将铝 - 氮化硅层沉积在基底上。铝硅氮化物层具有置于氮化硅和氮化铝之间的折射率。铝 - 氮化硅层还具有约4.5至约6eV的带隙，介电常数约为6×10 ^ -11至约8×10 ^ -11F / m。铝 - 氮化硅层可进一步热退火以降低铝 - 氮化硅层的氢含量。

2. 发明申请

US20120153301A1 III-V SEMICONDUCTOR STRUCTURES INCLUDING ALUMINUM-SILICON NITRIDE PASSIVATION 有权
标题翻译： III-V半导体结构，包括氮化硅钝化
公开(公告)号：US20120153301A1
公开(公告)日：2012-06-21
申请号：US13380104
申请日：2010-06-28
申请人： James R. Shealy , Richard Brown
发明人： James R. Shealy , Richard Brown
IPC分类号： H01L29/16 , H01L29/778 , H01L29/78 , H01L29/20
CPC分类号： H01L29/7787 , H01L21/02145 , H01L21/02271 , H01L21/318 , H01L23/291 , H01L23/3171 , H01L29/2003 , H01L29/42316 , H01L29/66462 , H01L29/7786 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor structure includes a semiconductor layer that is passivated with an aluminum-silicon nitride layer. When the semiconductor layer in particular comprises a III-V semiconductor material such as a group III nitride semiconductor material or a gallium nitride semiconductor material, the aluminum-silicon nitride material provides a superior passivation in comparison with a silicon nitride material.
摘要翻译：半导体结构包括用铝 - 氮化硅层钝化的半导体层。当半导体层特别地包括诸如III族氮化物半导体材料或氮化镓半导体材料的III-V半导体材料时，与氮化硅材料相比，提供了优异的钝化。

3. 发明授权

US09299821B2 Gated III-V semiconductor structure and method 有权
标题翻译：门III-V半导体结构及方法
公开(公告)号：US09299821B2
公开(公告)日：2016-03-29
申请号：US13389127
申请日：2011-06-22
申请人： James R. Shealy , Richard Brown
发明人： James R. Shealy , Richard Brown
IPC分类号： H01L21/02 , H01L29/778 , H01L23/29 , H01L29/66 , H01L23/31 , H01L29/10 , H01L29/20
CPC分类号： H01L29/778 , H01L21/02381 , H01L23/291 , H01L23/3171 , H01L29/1066 , H01L29/2003 , H01L29/66431 , H01L29/66462 , H01L29/7786 , H01L2924/0002 , H01L2924/00
摘要： A gated III-V semiconductor structure and a method for fabricating the gated III-V semiconductor structure includes a threshold modifying dopant region within a III-V semiconductor barrier layer at the base of an aperture through a passivation layer that otherwise passivates the III-V semiconductor barrier layer. The passivation layer, which may comprise an aluminum-silicon nitride material, has particular bandgap and permittivity properties that provide for enhanced performance of a III-V semiconductor device that derives from the III-V semiconductor structure absent a field plate. The threshold modifying dopant region provides the possibility for forming both an enhancement mode gated III-V semiconductor structure and a depletion mode III-V semiconductor structure on the same substrate. The threshold modifying dopant region when comprising a magnesium (Mg) threshold modifying dopant may be incorporated into the gates III-V semiconductor structure using a dicyclopentadienyl magnesium (Cp2Mg) vapor diffusion method or a magnesium-silicon nitride (MgSiN) solid state diffusion method.
摘要翻译：门III-V半导体结构和用于制造栅极III-V半导体结构的方法包括在通过钝化层的孔底部的III-V半导体阻挡层内的阈值修改掺杂剂区域，否则钝化层III-V 半导体阻挡层。可以包括铝 - 氮化硅材料的钝化层具有特定的带隙和介电常数特性，其提供了不存在场板的III-V半导体结构的III-V半导体器件的增强的性能。阈值修改掺杂剂区域提供在同一衬底上形成增强模式门控III-V半导体结构和耗尽型III-V半导体结构的可能性。使用二环戊二烯基镁（Cp2Mg）蒸气扩散法或镁 - 氮化硅（MgSiN）固态扩散法可以将包含镁（Mg）阈值修饰掺杂剂的阈值修饰掺杂剂区域结合到栅极III-V半导体结构中。

4. 发明授权

US09306050B2 III-V semiconductor structures including aluminum-silicon nitride passivation 有权
标题翻译：包括铝 - 氮化硅钝化的III-V半导体结构
公开(公告)号：US09306050B2
公开(公告)日：2016-04-05
申请号：US13380104
申请日：2010-06-28
申请人： James R. Shealy , Richard Brown
发明人： James R. Shealy , Richard Brown
IPC分类号： H01L29/778 , H01L23/29 , H01L23/31 , H01L29/423 , H01L29/66 , H01L29/20
CPC分类号： H01L29/7787 , H01L21/02145 , H01L21/02271 , H01L21/318 , H01L23/291 , H01L23/3171 , H01L29/2003 , H01L29/42316 , H01L29/66462 , H01L29/7786 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor structure includes a semiconductor layer that is passivated with an aluminum-silicon nitride layer. When the semiconductor layer in particular comprises a III-V semiconductor material such as a group III nitride semiconductor material or a gallium nitride semiconductor material, the aluminum-silicon nitride material provides a superior passivation in comparison with a silicon nitride material.
摘要翻译：半导体结构包括用铝 - 氮化硅层钝化的半导体层。当半导体层特别地包括诸如III族氮化物半导体材料或氮化镓半导体材料的III-V半导体材料时，与氮化硅材料相比，提供了优异的钝化。

5. 发明授权

US09991360B2 Method for forming III-V semiconductor structures including aluminum-silicon nitride passivation 有权
公开(公告)号：US09991360B2
公开(公告)日：2018-06-05
申请号：US13380150
申请日：2010-06-28
申请人： James R. Shealy , Richard Brown
发明人： James R. Shealy , Richard Brown
IPC分类号： H01L29/66 , H01L21/02 , H01L21/318 , H01L29/20 , H01L29/778 , A61K38/48 , C12N9/64 , H01L23/29 , H01L23/31 , H01L29/423 , A61K38/00
CPC分类号： H01L29/7787 , H01L21/02145 , H01L21/02271 , H01L21/318 , H01L23/291 , H01L23/3171 , H01L29/2003 , H01L29/42316 , H01L29/66462 , H01L29/7786 , H01L2924/0002 , H01L2924/00
摘要： A method for fabricating a semiconductor structure includes forming a semiconductor layer over a substrate and forming an aluminum-silicon nitride layer upon the semiconductor layer. When the semiconductor layer in particular comprises a III-V semiconductor material such as a group III nitride semiconductor material or a gallium nitride semiconductor material, the aluminum-silicon nitride material provides a superior passivation in comparison with a silicon nitride material.

6. 发明申请

US20130153963A1 GATED III-V SEMICONDUCTOR STRUCTURE AND METHOD 有权
标题翻译： GATED III-V半导体结构与方法
公开(公告)号：US20130153963A1
公开(公告)日：2013-06-20
申请号：US13389127
申请日：2011-06-22
申请人： James R. Shealy , Richard Brown
发明人： James R. Shealy , Richard Brown
IPC分类号： H01L29/778 , H01L29/66
CPC分类号： H01L29/778 , H01L21/02381 , H01L23/291 , H01L23/3171 , H01L29/1066 , H01L29/2003 , H01L29/66431 , H01L29/66462 , H01L29/7786 , H01L2924/0002 , H01L2924/00
摘要： A gated III-V semiconductor structure and a method for fabricating the gated III-V semiconductor structure includes a threshold modifying dopant region within a III-V semiconductor barrier layer at the base of an aperture through a passivation layer that otherwise passivates the III-V semiconductor barrier layer. The passivation layer, which may comprise an aluminum-silicon nitride material, has particular bandgap and permittivity properties that provide for enhanced performance of a III-V semiconductor device that derives from the III-V semiconductor structure absent a field plate. The threshold modifying dopant region provides the possibility for forming both an enhancement mode gated III-V semiconductor structure and a depletion mode III-V semiconductor structure on the same substrate. The threshold modifying dopant region when comprising a magnesium (Mg) threshold modifying dopant may be incorporated into the gates III-V semiconductor structure using a dicyclopentadienyl magnesium (Cp2Mg) vapor diffusion method or a magnesium-silicon nitride (MgSiN) solid state diffusion method.
摘要翻译：门III-V半导体结构和用于制造栅极III-V半导体结构的方法包括在通过钝化层的孔底部的III-V半导体阻挡层内的阈值修改掺杂剂区域，否则钝化层III-V 半导体阻挡层。可以包括铝 - 氮化硅材料的钝化层具有特定的带隙和介电常数特性，其提供了不存在场板的III-V半导体结构的III-V半导体器件的增强的性能。阈值修改掺杂剂区域提供在同一衬底上形成增强模式门控III-V半导体结构和耗尽型III-V半导体结构的可能性。使用二环戊二烯基镁（Cp2Mg）蒸气扩散法或镁 - 氮化硅（MgSiN）固态扩散法可以将包含镁（Mg）阈值修饰掺杂剂的阈值修饰掺杂剂区域结合到栅极III-V半导体结构中。

7. 发明申请

US20120156895A1 CHEMICAL VAPOR DEPOSITION PROCESS FOR ALUMINUM SILICON NITRIDE 有权
标题翻译：化学气相沉积工艺的氮化硅
公开(公告)号：US20120156895A1
公开(公告)日：2012-06-21
申请号：US13380144
申请日：2010-06-28
申请人： James R. Shealy , Richard Brown
发明人： James R. Shealy , Richard Brown
IPC分类号： H01L21/31
CPC分类号： H01L21/318 , C23C16/34 , H01L21/02145 , H01L21/02271
摘要： A chemical vapor deposition method for forming an aluminum-silicon nitride layer upon a substrate uses an aluminum precursor, a silicon precursor and a nitrogen precursor under chemical vapor deposition conditions to deposit the aluminum-silicon nitride layer upon the substrate. The aluminum-silicon nitride layer has an index of refraction interposed between silicon nitride and aluminum nitride. The aluminum-silicon nitride layer also has a bandgap from about 4.5 to about 6 eV and a permittivity from about 6×10̂-11 to about 8×10̂-11 F/m. The aluminum-silicon nitride layer may be further thermally annealed to reduce a hydrogen content of the aluminum-silicon nitride layer.
摘要翻译：用于在基板上形成铝 - 氮化硅层的化学气相沉积方法在化学气相沉积条件下使用铝前体，硅前驱体和氮前体，以将铝 - 氮化硅层沉积在基底上。铝硅氮化物层具有置于氮化硅和氮化铝之间的折射率。铝 - 氮化硅层还具有约4.5至约6eV的带隙，介电常数约为6×10-11至约8×10 -11F / m。铝 - 氮化硅层可进一步热退火以降低铝 - 氮化硅层的氢含量。

8. 发明申请

US20120156836A1 METHOD FOR FORMING III-V SEMICONDUCTOR STRUCTURES INCLUDING ALUMINUM-SILICON NITRIDE PASSIVATION 有权
标题翻译：形成III-V族半导体结构的方法，其中包括氮化铝钝化
公开(公告)号：US20120156836A1
公开(公告)日：2012-06-21
申请号：US13380150
申请日：2010-06-28
申请人： James R. Shealy , Richard Brown
发明人： James R. Shealy , Richard Brown
IPC分类号： H01L21/335 , H01L21/20
CPC分类号： H01L29/7787 , H01L21/02145 , H01L21/02271 , H01L21/318 , H01L23/291 , H01L23/3171 , H01L29/2003 , H01L29/42316 , H01L29/66462 , H01L29/7786 , H01L2924/0002 , H01L2924/00
摘要： A method for fabricating a semiconductor structure includes forming a semiconductor layer over a substrate and forming an aluminum-silicon nitride layer upon the semiconductor layer. When the semiconductor layer in particular comprises a III-V semiconductor material such as a group III nitride semiconductor material or a gallium nitride semiconductor material, the aluminum-silicon nitride material provides a superior passivation in comparison with a silicon nitride material.
摘要翻译：一种制造半导体结构的方法包括在衬底上形成半导体层，并在半导体层上形成铝 - 氮化硅层。当半导体层特别地包括诸如III族氮化物半导体材料或氮化镓半导体材料的III-V半导体材料时，与氮化硅材料相比，提供了优异的钝化。

9. 发明申请

US20170102346A1 MEMS Bio-DSC 审中-公开
公开(公告)号：US20170102346A1
公开(公告)日：2017-04-13
申请号：US14878443
申请日：2015-10-08
申请人： Richard Brown , William Buote , Ernesto Freire , Anthony Maletta , Thomas Denner
发明人： Richard Brown , William Buote , Ernesto Freire , Anthony Maletta , Thomas Denner
IPC分类号： G01N25/48 , B01L3/00
CPC分类号： G01N25/4886 , B01L3/502715 , B01L2200/027 , B01L2200/147 , B01L2300/0609 , B01L2300/0627 , B01L2300/0816 , B01L2300/0861 , B01L2300/12 , B01L2300/18 , B01L2300/1827 , G01N25/4833 , G01N25/4893
摘要： A MEMS cassette for insertion into a DSC calorimeter and a DSC calorimeter using MEMS cassettes to conduct DSC experiments. The MEMS cassette includes a chip configured to conduct DSC reactions of a sample and reference to derive information regarding the sample.

10. 发明授权

US08707303B2 Dynamic virtualization and policy-based access control of removable storage devices in a virtualized environment 有权
标题翻译：虚拟化环境中可移动存储设备的动态虚拟化和基于策略的访问控制
公开(公告)号：US08707303B2
公开(公告)日：2014-04-22
申请号：US13259527
申请日：2009-10-22
申请人： Keith Harrison , Richard Brown , Chris I. Dalton
发明人： Keith Harrison , Richard Brown , Chris I. Dalton
IPC分类号： G06F9/455 , G06F17/30 , H04L29/06
CPC分类号： G06F21/53 , G06F9/45558 , G06F21/6209 , G06F21/78 , G06F2009/45587 , G06F2221/2101 , G06F2221/2141 , G06F2221/2149 , G06F2221/2153
摘要： A method includes executing a hypervisor (165) with computing hardware (105) to implement a virtual machine (175); responsive to detecting a removable storage medium (115) communicatively coupled to the computing hardware (105), executing a virtualized migration control appliance (180) through the hypervisor (165) separate from the virtual machine (175); and blocking the virtual machine (175) from accessing data (185) stored by the removable storage medium (115) with the virtualized migration control appliance (180) if at least one governing policy prohibits the virtual machine (175) from accessing the data (185).
摘要翻译：一种方法包括用计算硬件（105）执行管理程序（165）以实现虚拟机（175）; 响应于检测通信地耦合到所述计算硬件（105）的可移动存储介质（115），通过与所述虚拟机（175）分离的所述管理程序（165）执行虚拟化迁移控制设备（180）; 以及如果至少一个管理策略禁止所述虚拟机（175）访问所述数据（175），则阻止所述虚拟机（175）访问由所述可移动存储介质（115）存储的虚拟化迁移控制设备（180）的数据（185） 185）。

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