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    • 5. 发明授权
    • System and method for shared mesh restoration in optical networks
    • 光网络中共享网格恢复的系统和方法
    • US08965198B2
    • 2015-02-24
    • US13658587
    • 2012-10-23
    • Qiong ZhangPaparao PalacharlaXi WangMotoyoshi Sekiya
    • Qiong ZhangPaparao PalacharlaXi WangMotoyoshi Sekiya
    • H04B10/00
    • H04J14/0284H04J14/0212H04J14/0217H04J14/0268
    • A method for shared mesh restoration includes configuring a switch to allow sharing of a plurality of backup line cards across a plurality of node degrees associated with a reconfigurable optical add/drop multiplexer (ROADM). The switch is communicatively coupled to the ROADM. The method further includes configuring a number of backup line cards coupled to the switch. The number of backup line cards is based on determining a number of active backup lightpaths for each of a plurality of network failures associated with each of the plurality of node degrees of the ROADM, identifying which node degree and failure has the largest number of active backup lightpaths for all of the plurality of node degrees of the ROADM and for each of the plurality of network failures, and determining the number of backup line cards to configure based on the identified largest number of active backup lightpaths.
    • 一种用于共享网格恢复的方法包括配置交换机以允许在与可重配置光分插复用器(ROADM)相关联的多个节点度上共享多个备用线卡。 交换机通信耦合到ROADM。 该方法还包括配置耦合到交换机的多个备用线路卡。 备用线路卡的数量基于确定与ROADM的多个节点度中的每一个相关联的多个网络故障中的每一个的主动备用光路的数量,识别哪个节点度和故障具有最大数量的主动备份 用于ROADM的所有多个节点度数和多个网络故障中的每一个的光路,以及基于所识别的最大数量的主动备用光路确定要配置的备用线路卡的数量。
    • 9. 发明申请
    • Equivalent Electrical Model of SOI FET of Body Leading-Out Structure, and Modeling Method Thereof
    • 体引出结构SOI FET的等效电气模型及其建模方法
    • US20130054219A1
    • 2013-02-28
    • US13696416
    • 2011-09-25
    • Jing ChenQingqing WuJiexin LuoZhan ChaiXi Wang
    • Jing ChenQingqing WuJiexin LuoZhan ChaiXi Wang
    • G06G7/62
    • G06F17/5036
    • The present invention provides an equivalent electrical model of a Silicon On Insulator (SOI) Field Effect Transistor (FET) of a body leading-out structure, and a modeling method thereof. The equivalent electrical model is formed by an internal FET and an external FET connected in parallel, where the SOI FET of a body leading-out structure is divided into a body leading-out part and a main body part, the internal FET represents a parasitic transistor of the body leading-out part, and the external FET represents a normal transistor of the main body part. The equivalent electrical model provided in the present invention completely includes the influence of parts of a physical structure of the SOIMOSFET device of a body leading-out structure, that is, the body leading-out part and the main body part, on the electrical properties, thereby improving a fitting effect of the model on the electrical properties of the device.
    • 本发明提供了体导出结构的绝缘体硅(SOI)场效应晶体管(FET)的等效电气模型及其建模方法。 等效电气模型由并联连接的内部FET和外部FET形成,其中主体引出结构的SOI FET被分为主体引出部分和主体部分,内部FET表示寄生 体外引出部分的晶体管,外部FET表示主体部分的正常晶体管。 本发明提供的等效电气模型完全包括体导体结构的SOIMOSFET装置的物理结构的部分,即主体引出部分和主体部分对电性能的影响 ,从而提高了模型对装置的电气特性的拟合效果。