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1. 发明申请

US20190194800A1 METHOD FOR THE PROTECTION OF A HAFNIUM-FREE, NICKEL-BASED MONOCRYSTALLINE SUPERALLOY PART AGAINST CORROSION AND OXIDATION 审中-公开
公开(公告)号：US20190194800A1
公开(公告)日：2019-06-27
申请号：US16308331
申请日：2017-06-09
申请人： SAFRAN
发明人： Amar SABOUNDJI , Virginie JAQUET
IPC分类号： C23C14/58 , C30B29/52 , C23C14/16 , C23C14/34
CPC分类号： C23C14/5853 , C23C12/00 , C23C14/165 , C23C14/34 , C23C28/321 , C23C28/345 , C23C28/3455 , C30B29/52
摘要： The invention relates to a method tor protecting a hafnium-free, nickel-based monocrystalline superalloy part (1) against corrosion and oxidation. Said method is characterized in that it involves at least the steps of: -manufacturing a hafnium-free, nickel-based monocrystalline superalloy part (1); -depositing a first hafnium-containing layer (2), an undercoat made of an alloy containing at least 10 atom % aluminum, and a second hafnium-containing layer on the part (1) such that a mixed layer (3) is formed, and depositing a third hafnium-containing layer (4) on the part (1); -performing a diffusion treatment in order for the first (2) and third (4) layers to diffuse such that a first interdiffusion region (21) is formed on the top portion of the part (1) and a second interdiffusion region (41) is formed on the surface of the mixed layer (3); -subjecting the second interdiffusion region (41) to an oxidation treatment so as to obtain a hafnium-doped alumina layer (42).

2. 发明申请

US20180233654A1 MAGNETOSTRICTIVE MEMBER AND MANUFACTURING METHOD THEREOF 审中-公开
公开(公告)号：US20180233654A1
公开(公告)日：2018-08-16
申请号：US15955687
申请日：2018-04-18
申请人： NIPPON KOSHUHA STEEL Co., Ltd
发明人： Katsuya IMAI
IPC分类号： H01L41/12 , H01L41/47 , H01L41/20 , C22C38/00 , C30B11/00 , C30B29/52
CPC分类号： H01L41/12 , C22C38/00 , C22C38/002 , C22C2202/02 , C30B11/00 , C30B29/52 , H01L41/20 , H01L41/47
摘要： The present invention provides a magnetostrictive member with high performance, high reliability and high versatility. The magnetostrictive member is used in the vibration power generation as a power source for extracting electric energy from various vibrations.The member made of the single crystal is manufactured cheaper than the conventional manufacturing method. The magnetostrictive member is formed by cutting a single crystal of Fe—Ga alloy by using electric discharge machining in a state that orientation of the crystal of the Fe—Ga alloy is aligned in a direction in which magnetostriction of the magnetostrictive member is required.

3. 发明申请

US20180175371A1 A Nanowire Heterostructure 审中-公开
公开(公告)号：US20180175371A1
公开(公告)日：2018-06-21
申请号：US15579029
申请日：2016-06-01
申请人： University of Limerick
发明人： Kevin M. Ryan , Tadhg Kennedy
IPC分类号： H01M4/134 , H01M4/36 , H01M4/38 , H01M10/0525 , C30B29/06 , C30B29/08 , C30B29/66 , C30B11/12 , C30B25/18
CPC分类号： H01M4/134 , C30B11/12 , C30B25/18 , C30B29/06 , C30B29/08 , C30B29/52 , C30B29/60 , C30B29/66 , H01M4/366 , H01M4/38 , H01M4/386 , H01M10/0525
摘要： The present invention provides a heterostructure for use as an electrode in a lithium ion battery as well as a method for synthesising the heterostructure.

4. 发明申请

US20170350038A1 VACUUM PLATFORM WITH PROCESS CHAMBERS FOR REMOVING CARBON CONTAMINANTS AND SURFACE OXIDE FROM SEMICONDUCTOR SUBSTRATES 审中-公开
公开(公告)号：US20170350038A1
公开(公告)日：2017-12-07
申请号：US15499100
申请日：2017-04-27
申请人： Applied Materials, Inc.
发明人： Kin Pong LO , Schubert S. CHU
IPC分类号： C30B25/18 , H01L21/67 , C30B29/06 , H01L21/02 , C30B29/52 , H01L21/677 , C30B25/20
CPC分类号： C30B25/186 , C30B25/00 , C30B29/06 , C30B29/52 , C30B35/00 , H01J37/32091 , H01J37/321 , H01J37/32357 , H01J37/32477 , H01J37/32899 , H01L21/02046 , H01L21/67167 , H01L21/67184 , H01L21/67201 , H01L21/67207
摘要： Implementations of the present disclosure generally relate to an improved vacuum processing system. In one implementation, the vacuum processing system includes a first transfer chamber coupling to at least one epitaxy process chamber, a second transfer chamber, a transition station disposed between the first transfer chamber and the second transfer chamber, a first plasma-cleaning chamber coupled to the second transfer chamber for removing oxides from a surface of a substrate, and a load lock chamber coupled to the second transfer chamber. The transition station connects to the first transfer chamber and the second transfer chamber, and the transition station includes a second plasma-cleaning chamber for removing carbon-containing contaminants from the surface of the substrate.

5. 发明授权

US09816161B2 Ni-based single crystal superalloy 有权
公开(公告)号：US09816161B2
公开(公告)日：2017-11-14
申请号：US14419765
申请日：2013-07-30
申请人： NATIONAL INSTITUTE FOR MATERIALS SCIENCE , MITSUBISHI HEAVY INDUSTRIES, LTD.
发明人： Kyoko Kawagishi , Hiroshi Harada , Tadaharu Yokokawa , Yutaka Koizumi , Toshiharu Kobayashi , Masao Sakamoto , Michinari Yuyama , Masaki Taneike , Ikuo Okada , Sachio Shimohata , Hidetaka Oguma , Ryota Okimoto , Keizo Tsukagoshi , Yoshitaka Uemura , Junichiro Masada , Shunsuke Torii
IPC分类号： C22F1/10 , C22C19/05 , F01D5/28 , C30B29/52 , C30B11/00 , C30B33/02
CPC分类号： C22C19/057 , C22C19/056 , C22F1/10 , C30B11/00 , C30B29/52 , C30B33/02 , F01D5/28 , F05D2300/132 , F05D2300/175 , F05D2300/607 , Y02T50/671
摘要： Provided is a Ni-based single crystal superalloy containing 6% by mass or more and 12% by mass or less of Cr, 0.4% by mass or more and 3.0% by mass or less of Mo, 6% by mass or more and 10% by mass or less of W, 4.0% by mass or more and 6.5% by mass or less of Al, 0% by mass or more and 1% by mass or less of Nb, 8% by mass or more and 12% by mass or less of Ta, 0% by mass or more and 0.15% by mass or less of Hf, 0.01% by mass or more and 0.2% by mass or less of Si, and 0% by mass or more and 0.04% by mass or less of Zr, and optionally containing at least one element selected from B, C, Y, La, Ce, and V, with a balance being Ni and inevitable impurities.

6. 发明授权

US09793115B2 Structures and devices including germanium-tin films and methods of forming same 有权
公开(公告)号：US09793115B2
公开(公告)日：2017-10-17
申请号：US15203642
申请日：2016-07-06
申请人： ASM IP HOLDING, B.V.
发明人： John Tolle
IPC分类号： H01L21/20 , H01L21/02 , H01L31/0745 , H01L31/18 , H01L29/165 , C30B25/18 , C30B29/52 , H01L29/161
CPC分类号： H01L21/02535 , C30B25/183 , C30B29/52 , H01L21/02381 , H01L21/0245 , H01L21/02532 , H01L21/02576 , H01L21/02579 , H01L21/0262 , H01L29/161 , H01L29/165 , H01L31/0745 , H01L31/1812 , Y02E10/50
摘要： Methods of forming germanium-tin films using germane as a precursor are disclosed. Exemplary methods include growing films including germanium and tin in an epitaxial chemical vapor deposition reactor, wherein a ratio of a tin precursor to germane is less than 0.1. Also disclosed are structures and devices including germanium-tin films formed using the methods described herein.

7. 发明授权

US09770758B2 Method for forming a directionally solidified replacement body for a component using additive manufacturing 有权
公开(公告)号：US09770758B2
公开(公告)日：2017-09-26
申请号：US15219921
申请日：2016-07-26
申请人： United Technologies Corporation
发明人： JinQuan Xu
IPC分类号： B22D23/06 , B22D27/04 , B33Y10/00 , B33Y40/00 , B33Y80/00 , B22C9/10 , B22C9/22 , B22D29/00 , B22D25/02 , B22F3/105 , B22F3/24 , B22F5/04 , B23K15/00 , B23K26/342 , B23K26/70 , B23K37/00 , F01D5/00 , F01D5/12 , F01D9/04 , F02C7/22 , F23R3/00 , B23K101/00
CPC分类号： B22D27/045 , B22C9/02 , B22C9/04 , B22C9/10 , B22C9/108 , B22C9/12 , B22C9/22 , B22D23/06 , B22D25/02 , B22D29/001 , B22F3/1055 , B22F3/24 , B22F5/007 , B22F5/009 , B22F5/04 , B22F2003/248 , B22F2998/10 , B23K1/0018 , B23K9/04 , B23K9/167 , B23K15/0046 , B23K15/0086 , B23K20/00 , B23K26/34 , B23K26/342 , B23K26/70 , B23K31/02 , B23K37/00 , B23K2101/001 , B23P6/005 , B23P6/007 , B23P6/045 , B33Y10/00 , B33Y40/00 , B33Y80/00 , C30B11/00 , C30B11/003 , C30B21/02 , C30B29/52 , F01D5/005 , F01D5/12 , F01D5/18 , F01D5/186 , F01D5/187 , F01D9/04 , F02C7/222 , F05D2220/32 , F05D2230/21 , F05D2230/233 , F05D2230/234 , F05D2230/235 , F05D2230/238 , F05D2230/30 , F05D2230/80 , F05D2240/122 , F05D2240/304 , F05D2260/202 , F05D2260/204 , F05D2300/175 , F05D2300/20 , F05D2300/606 , F05D2300/608 , F23R3/002 , Y02P10/292 , Y02P10/295
摘要： A method of manufacturing a replacement body for a component is provided. The method includes the steps of: a) additively manufacturing a crucible for casting of the replacement body; b) solidifying a metal material within the crucible to form a directionally solidified microstructure within the replacement body; and c) removing the crucible to reveal the directionally solidified replacement body.

8. 发明申请

US20170178903A1 Single Crystal Rhombohedral Epitaxy of SiGe on Sapphire at 450°C - 500°C Substrate Temperatures 审中-公开
公开(公告)号：US20170178903A1
公开(公告)日：2017-06-22
申请号：US15386592
申请日：2016-12-21
申请人： U.S.A. as represented by the Administrator of the National Aeronautics and Space Administration
发明人： Sang Hyouk Choi , Adam J. Duzik
IPC分类号： H01L21/02 , C30B29/20 , C30B23/06 , C30B29/52 , H01L29/161 , C30B23/08
CPC分类号： H01L21/02532 , C30B23/063 , C30B23/08 , C30B29/06 , C30B29/08 , C30B29/20 , C30B29/52 , H01L21/0242 , H01L21/02433 , H01L21/02598 , H01L21/02609 , H01L21/02617 , H01L29/161
摘要： Various embodiments may provide a low temperature (i.e., less than 850° C.) method of Silicon-Germanium (SiGe) on sapphire (Al2O3) (SiGe/sapphire) growth that may produce a single crystal film with less thermal loading effort to the substrate than conventional high temperature (i.e., temperatures above 850° C.) methods. The various embodiments may alleviate the thermal loading requirement of the substrate, which in conventional high temperature (i.e., temperatures above 850° C.) methods had surface temperatures within the range of 850° C.-900° C. The various embodiments may provide a new thermal loading requirement of the sapphire substrate for growing single crystal SiGe on the sapphire substrate in the range of about 450° C. to about 500° C.

9. 发明授权

US09616489B2 Casting pattern 有权
公开(公告)号：US09616489B2
公开(公告)日：2017-04-11
申请号：US14427485
申请日：2013-09-06
申请人： SNECMA
发明人： Dominique Coyez , Serge Fargeas
IPC分类号： B22C7/02 , B22C9/04 , B22D27/04 , C30B11/00 , C30B29/52 , B22C9/22 , B22D29/00
CPC分类号： B22C7/02 , B22C9/04 , B22C9/22 , B22D27/045 , B22D29/00 , C30B11/002 , C30B29/52
摘要： A casting pattern for a lost-pattern casting, the pattern being in a shape of a turbine engine blade with a root and a body on either side of a platform that is substantially perpendicular to a main axis of the blade, and a method of producing a shell mold from the pattern, and a casting method using the shell mold. The blade body presents a pressure side, a suction side, a leading edge, and a trailing edge. The pattern also includes an expansion strip adjacent to the trailing edge, and a refractory core embedded in the pattern but presenting, both on the pressure side and on the suction side, a respective flush varnished surface between the trailing edge and the expansion strip. A web extends between the platform and the expansion strip and presents a free edge between them.

10. 发明授权

US09555471B2 Casting method and cast article 有权
标题翻译：铸造方法和铸造物品
公开(公告)号：US09555471B2
公开(公告)日：2017-01-31
申请号：US14165719
申请日：2014-01-28
申请人： GENERAL ELECTRIC COMPANY
发明人： Jian Zheng , Arthur S. Peck
IPC分类号： B22D25/06 , B22D27/04 , C30B11/00 , C30B29/52
CPC分类号： B22D25/06 , B22D27/045 , C30B11/003 , C30B11/006 , C30B29/52
摘要： A casting method and cast article are provided. The casting method includes providing a casting furnace, the casting furnace including a withdrawal region in a lower end, positioning a mold within the casting furnace, positioning a molten material in the mold, partially withdrawing the mold a withdrawal distance through the withdrawal region in the casting furnace, the withdrawal distance providing a partially withdrawn portion, then reinserting at least a portion of the partially withdrawn portion into the casting furnace through the withdrawal region, and then completely withdrawing the mold from the casting furnace. The reinserting partially re-melts a solidified portion within the partially withdrawn portion to fill pores formed therein with the molten material. The cast article includes a microstructure and a porosity corresponding to being formed by a process comprising partially withdrawing, reinserting, and completely withdrawing of a mold from a casting furnace to form the cast article.
摘要翻译：提供铸造方法和铸造制品。铸造方法包括提供铸造炉，铸造炉包括下端的取出区域，将模具定位在铸造炉内，将熔融材料定位在模具中，通过在模具中的退出区域部分地抽出模具的取出距离退出距离提供部分撤回部分，然后通过退出区域将至少部分撤回部分重新插入铸造炉中，然后从铸造炉中完全取出模具。重新插入部分地再次熔化部分抽出部分内的凝固部分，以填充其中形成的熔融材料的孔。铸造制品包括微观结构和孔隙度，其对应于通过包括从铸造炉部分地取出，重新插入和完全取出模具的方法形成，以形成铸造制品。

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