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1. 发明授权

US09735090B2 Integrated circuit devices having through-silicon vias and methods of manufacturing such devices 有权
公开(公告)号：US09735090B2
公开(公告)日：2017-08-15
申请号：US14873453
申请日：2015-10-02
申请人： Ju-il Choi , Atsushi Fujisaki , Byung-Iyul Park , Ji-soon Park , Joo-hee Jang , Jeong-gi Jin
发明人： Ju-il Choi , Atsushi Fujisaki , Byung-Iyul Park , Ji-soon Park , Joo-hee Jang , Jeong-gi Jin
IPC分类号： H01L23/48 , H01L21/768 , H01L23/00 , H01L23/532
CPC分类号： H01L23/481 , H01L21/76898 , H01L23/3135 , H01L23/53223 , H01L23/53238 , H01L23/53266 , H01L24/00 , H01L24/05 , H01L24/06 , H01L24/11 , H01L24/13 , H01L24/14 , H01L2224/02372 , H01L2224/0401 , H01L2224/05023 , H01L2224/05025 , H01L2224/05082 , H01L2224/05124 , H01L2224/05144 , H01L2224/05147 , H01L2224/05155 , H01L2224/05164 , H01L2224/05166 , H01L2224/05171 , H01L2224/05548 , H01L2224/05557 , H01L2224/05564 , H01L2224/05567 , H01L2224/0557 , H01L2224/05572 , H01L2224/05644 , H01L2224/05647 , H01L2224/05664 , H01L2224/06181 , H01L2224/11462 , H01L2224/11472 , H01L2224/11825 , H01L2224/11906 , H01L2224/13022 , H01L2224/13023 , H01L2224/131 , H01L2224/13147 , H01L2224/13552 , H01L2224/13566 , H01L2224/1357 , H01L2224/13644 , H01L2224/14181 , H01L2224/16145 , H01L2224/16146 , H01L2224/16225 , H01L2224/16227 , H01L2224/16237 , H01L2224/32225 , H01L2224/73204 , H01L2924/15311 , H01L2924/181 , H01L2924/18161 , H01L2924/00012 , H01L2924/00 , H01L2924/00014 , H01L2924/01023 , H01L2924/01015 , H01L2924/014 , H01L2924/01074
摘要： An integrated circuit device includes a semiconductor structure, a through-silicon-via (TSV) structure that penetrates through the semiconductor structure and a connection terminal connected to the TSV structure. A metal capping layer includes a flat capping portion that covers the bottom surface of the connection terminal and a wedge-shaped capping portion that is integrally connected to the flat capping portion and that partially covers a side wall of the connection terminal. The metal capping layer may be formed by an electroplating process in which the connection terminal is in contact with a metal strike electroplating solution while a pulse-type current is applied.

2. 发明申请

US20160099201A1 INTEGRATED CIRCUIT DEVICES HAVING THROUGH-SILICON VIAS AND METHODS OF MANUFACTURING SUCH DEVICES 有权
标题翻译：具有穿透硅六角形的集成电路设备及其制造方法
公开(公告)号：US20160099201A1
公开(公告)日：2016-04-07
申请号：US14873453
申请日：2015-10-02
申请人： Ju-il Choi , Atsushi Fujisaki , Byung-lyul Park , Ji-soon Park , Joo-hee Jang , Jeong-gi Jin
发明人： Ju-il Choi , Atsushi Fujisaki , Byung-lyul Park , Ji-soon Park , Joo-hee Jang , Jeong-gi Jin
IPC分类号： H01L23/498 , H01L23/532 , H01L23/48
CPC分类号： H01L23/481 , H01L21/76898 , H01L23/3135 , H01L23/53223 , H01L23/53238 , H01L23/53266 , H01L24/00 , H01L24/05 , H01L24/06 , H01L24/11 , H01L24/13 , H01L24/14 , H01L2224/02372 , H01L2224/0401 , H01L2224/05023 , H01L2224/05025 , H01L2224/05082 , H01L2224/05124 , H01L2224/05144 , H01L2224/05147 , H01L2224/05155 , H01L2224/05164 , H01L2224/05166 , H01L2224/05171 , H01L2224/05548 , H01L2224/05557 , H01L2224/05564 , H01L2224/05567 , H01L2224/0557 , H01L2224/05572 , H01L2224/05644 , H01L2224/05647 , H01L2224/05664 , H01L2224/06181 , H01L2224/11462 , H01L2224/11472 , H01L2224/11825 , H01L2224/11906 , H01L2224/13022 , H01L2224/13023 , H01L2224/131 , H01L2224/13147 , H01L2224/13552 , H01L2224/13566 , H01L2224/1357 , H01L2224/13644 , H01L2224/14181 , H01L2224/16145 , H01L2224/16146 , H01L2224/16225 , H01L2224/16227 , H01L2224/16237 , H01L2224/32225 , H01L2224/73204 , H01L2924/15311 , H01L2924/181 , H01L2924/18161 , H01L2924/00012 , H01L2924/00 , H01L2924/00014 , H01L2924/01023 , H01L2924/01015 , H01L2924/014 , H01L2924/01074
摘要： An integrated circuit device includes a semiconductor structure, a through-silicon-via (TSV) structure that penetrates through the semiconductor structure and a connection terminal connected to the TSV structure. A metal capping layer includes a flat capping portion that covers the bottom surface of the connection terminal and a wedge-shaped capping portion that is integrally connected to the flat capping portion and that partially covers a side wall of the connection terminal. The metal capping layer may be formed by an electroplating process in which the connection terminal is in contact with a metal strike electroplating solution while a pulse-type current is applied.
摘要翻译：集成电路器件包括半导体结构，穿透半导体结构的穿透硅通孔（TSV）结构和连接到TSV结构的连接端子。金属覆盖层包括覆盖连接端子的底表面的平坦封盖部分和与扁平封盖部分整体连接并部分覆盖连接端子的侧壁的楔形封盖部分。金属覆盖层可以通过电镀工艺形成，其中连接端子与金属冲击电镀溶液接触，同时施加脉冲型电流。

3. 发明授权

US10128168B2 Integrated circuit device including through-silicon via structure and method of manufacturing the same 有权
公开(公告)号：US10128168B2
公开(公告)日：2018-11-13
申请号：US14543688
申请日：2014-11-17
申请人： Ju-il Choi , Kun-sang Park , Son-kwan Hwang , Ji-soon Park , Byung-lyul Park
发明人： Ju-il Choi , Kun-sang Park , Son-kwan Hwang , Ji-soon Park , Byung-lyul Park
IPC分类号： H01L23/532 , H01L23/48 , H01L23/31 , H01L25/065 , H01L21/768
摘要： An integrated circuit (IC) device includes a semiconductor substrate having a via hole extending through at least a part thereof, a conductive structure in the via hole, a conductive barrier layer adjacent the conductive structure; and a via insulating layer interposed between the semiconductor substrate and the conductive barrier layer. The conductive barrier layer may include an outer portion oxidized between the conductive barrier layer and the via insulating layer, and the oxidized outer portion of the conductive barrier layer may substantially surrounds the remaining portion of the conductive barrier layer.

4. 发明授权

US5834847A Completely buried contact holes 失效
公开(公告)号：US5834847A
公开(公告)日：1998-11-10
申请号：US688606
申请日：1996-07-30
申请人： Woo-sang Jung , Gil-heyun Choi , Ji-soon Park , Byeong-jun Kim
发明人： Woo-sang Jung , Gil-heyun Choi , Ji-soon Park , Byeong-jun Kim
IPC分类号： H01L23/522 , H01L21/28 , H01L21/768 , H01L23/485 , H01L23/532 , H01L23/528
CPC分类号： H01L23/485 , H01L23/53223 , H01L2924/0002
摘要： A method for forming a completely buried contact hole and a semiconductor device having a completely buried contact hole in an interconnection structure is disclosed. The completely buried contact hole includes a first insulating layer of a first thermal conductivity having a contact hole formed therein. A region of material of a second thermal conductivity formed in the first insulating layer adjacent the location of the contact hole. The second thermal conductivity is greater than the first thermal conductivity such that the thermal conductivity of the region of material is greater than the thermal conductivity of the insulating layer. A metal is formed in the hole which completely buries the contact hole. The method includes forming in an insulator adjacent a contact hole a region of material of a higher thermal conductivity than the insulating layer, depositing a metal in the contact hole and heating the metal, the insulating layer and the region of material of a higher thermal conductivity to flow the metal into the contact hole so as to completely bury the contact hole.

5. 发明授权

US08155311B2 Method and apparatus for encrypting message for maintaining message integrity, and method and apparatus for decrypting message for maintaining message integrity 有权
标题翻译：用于加密用于维护消息完整性的消息的方法和装置，以及用于解密消息以维持消息完整性的方法和装置
公开(公告)号：US08155311B2
公开(公告)日：2012-04-10
申请号：US11952174
申请日：2007-12-07
申请人： Jun-bum Shin , Ji-soon Park
发明人： Jun-bum Shin , Ji-soon Park
IPC分类号： H04L9/00
CPC分类号： H04L9/0643 , H04L9/0637 , H04L9/3236 , H04L2209/38
摘要： A method of encrypting a message for message integrity is provided. In the method, a random number is generated, a first ciphertext is generated by encrypting the message by using the generated random number, a hash value of the first ciphertext is calculated, an encryption key is generated by using the hash value of the first ciphertext and a shared key, a second ciphertext is generated by encrypting the random number by using the encryption key, and the first and second ciphertexts are combined.
摘要翻译：提供了一种加密消息的消息完整性的方法。在该方法中，生成随机数，通过使用生成的随机数对消息进行加密来生成第一密文，计算第一密文的散列值，通过使用第一密文的散列值生成加密密钥和共享密钥，通过使用加密密钥加密随机数来生成第二密文，并且组合第一和第二密文。

6. 发明申请

US20080279385A1 METHOD AND HOST DEVICE FOR USING CONTENT USING MOBILE CARD, AND MOBILE CARD 审中-公开
标题翻译：使用移动卡和移动卡使用内容的方法和主机设备
公开(公告)号：US20080279385A1
公开(公告)日：2008-11-13
申请号：US11952306
申请日：2007-12-07
申请人： Ji-soon Park , Jun-bum Shin
发明人： Ji-soon Park , Jun-bum Shin
IPC分类号： H04L9/08
CPC分类号： G06Q20/1235 , G06Q20/32 , G06Q20/341 , G06Q20/40975 , G07F7/1008 , G07F7/1016 , H04L9/0822 , H04L9/0877 , H04L9/0897 , H04L2209/60 , H04L2209/805
摘要： Provided are a method and host device for using content using a mobile card, and a mobile card. The method includes storing an identifier (ID) of the mobile card, a global key, and a content key encrypted by a secret key of the mobile card, generating a combined key of the ID and the global key, generating a first cryptogram, in which the content key encrypted by the secret key is encrypted by the combined key, transmitting the first cryptogram to the mobile card, receiving from the mobile card a second cryptogram, in which the content key is encrypted by the combined key, and decrypting the second cryptogram. Accordingly, a user can use encrypted content from a remote place.
摘要翻译：提供了使用移动卡和移动卡来使用内容的方法和主机设备。该方法包括存储移动卡的标识符（ID），全局密钥和由移动卡的秘密密钥加密的内容密钥，生成ID和全局密钥的组合密钥，生成第一密码由密钥加密的内容密钥由组合密钥加密，将第一密码传送到移动卡，从移动卡接收第二密码，其中内容密钥由组合密钥加密，并且解密第二密码密码因此，用户可以使用来自偏远地方的加密内容。

7. 发明授权

US5982039A Completely buried contact holes 失效
标题翻译：完全埋入接触孔
公开(公告)号：US5982039A
公开(公告)日：1999-11-09
申请号：US48391
申请日：1998-03-26
申请人： Woo-sang Jung , Gil-heyun Choi , Ji-soon Park , Byeong-jun Kim
发明人： Woo-sang Jung , Gil-heyun Choi , Ji-soon Park , Byeong-jun Kim
IPC分类号： H01L23/522 , H01L21/28 , H01L21/768 , H01L23/485 , H01L23/532
CPC分类号： H01L23/485 , H01L23/53223 , H01L2924/0002
摘要： A method for forming a completely buried contact hole and a semiconductor device having a completely buried contact hole in an interconnection structure is disclosed. The completely buried contact hole includes a first insulating layer of a first thermal conductivity having a contact hole formed therein. A region of material of a second thermal conductivity formed in the first insulating layer adjacent the location of the contact hole. The second thermal conductivity is greater than the first thermal conductivity such that the thermal conductivity of the region of material is greater than the thermal conductivity of the insulating layer. A metal is formed in the hole which completely buries the contact hole. The method includes forming in an insulator adjacent a contact hole a region of material of a higher thermal conductivity than the insulating layer, depositing a metal in the contact hole and heating the metal, the insulating layer and the region of material of a higher thermal conductivity to flow the metal into the contact hole so as to completely bury the contact hole.
摘要翻译：公开了一种用于形成完全埋入的接触孔的方法和在互连结构中具有完全埋入的接触孔的半导体器件。完全埋入的接触孔包括具有形成在其中的接触孔的第一导热性的第一绝缘层。形成在与接触孔的位置相邻的第一绝缘层中的第二导热材料的区域。第二热导率大于第一热导率，使得材料区域的热导率大于绝缘层的热导率。在孔中形成金属，完全埋入接触孔。该方法包括在绝缘体中邻近形成绝缘层的导热系数较高的材料区域，在接触孔中沉积金属并加热金属，绝缘层和导热系数较高的材料区域将金属流入接触孔，以完全埋入接触孔。

8. 发明授权

US09100677B2 Server, client device, method for generating a transport stream thereof and processing the transport stream thereof 有权
标题翻译：服务器，客户端设备，用于生成其传输流并处理其传输流的方法
公开(公告)号：US09100677B2
公开(公告)日：2015-08-04
申请号：US13607876
申请日：2012-09-10
申请人： Dong-jin Kang , Dave Ahn , Ji-soon Park
发明人： Dong-jin Kang , Dave Ahn , Ji-soon Park
IPC分类号： G06F21/00 , H04L29/06 , H04N21/258 , H04N21/2347 , H04N21/266 , H04L9/08 , H04L9/20 , H04N7/167
CPC分类号： H04N21/25816 , H04N21/2347 , H04N21/26613
摘要： A method for generating a transport stream of a server is provided. The method for generating a transport stream of a server which sends broadcasting content to a client device comprises: scrambling broadcasting content by using a specific key; adding at least one content-encryption message which includes the specific key and a device key for obtaining the specific key from the at least one content-encryption message to the broadcasting content so as to generate a transport stream; and sending the generated transport stream to the client device.
摘要翻译：提供了一种用于生成服务器的传输流的方法。用于生成向客户端设备发送广播内容的服务器的传输流的方法包括：通过使用特定密钥对广播内容进行加扰; 将至少一个包含特定密钥的内容加密消息和用于从所述至少一个内容加密消息获得所述特定密钥的设备密钥添加到所述广播内容，以便生成传输流; 并将生成的传输流发送到客户端设备。

9. 发明授权

US08709937B2 Method of forming micropattern, method of forming damascene metallization, and semiconductor device and semiconductor memory device fabricated using the same 有权
标题翻译：形成微图案的方法，形成镶嵌金属化的方法，以及使用其形成的半导体器件和半导体存储器件
公开(公告)号：US08709937B2
公开(公告)日：2014-04-29
申请号：US13533653
申请日：2012-06-26
申请人： In-sun Park , Gil-heyun Choi , Ji-soon Park , Jong-myeong Lee , Jong-won Hong , Hei-seung Kim
发明人： In-sun Park , Gil-heyun Choi , Ji-soon Park , Jong-myeong Lee , Jong-won Hong , Hei-seung Kim
IPC分类号： H01L21/4763
CPC分类号： H01L23/48 , H01L21/0337 , H01L21/31144 , H01L21/3212 , H01L21/76816 , H01L23/522 , H01L27/11565 , H01L27/1157 , H01L29/06 , H01L2924/0002 , H01L2924/00
摘要： According to example embodiments, a method of forming micropatterns includes forming dummy patterns having first widths on a dummy region of a substrate, and forming cell patterns having second widths on an active line region of the substrate. The active line region may be adjacent to the dummy region and the second widths may be less than the first widths. The method may further include forming damascene metallization by forming a seed layer on the active line region and the dummy region, forming a conductive material layer on a whole surface of the substrate, and planarizing the conductive material layer to form metal lines.
摘要翻译：根据示例性实施例，形成微图案的方法包括在衬底的虚拟区域上形成具有第一宽度的虚拟图案，并且在衬底的有源线区域上形成具有第二宽度的单元图案。有源线区域可以与虚拟区域相邻，并且第二宽度可以小于第一宽度。该方法可以进一步包括通过在有源线区域和虚拟区域上形成种子层来形成镶嵌金属化，在基片的整个表面上形成导电材料层，并平坦化导电材料层以形成金属线。

10. 发明授权

US5950105A Completely buried contact holes and methods of forming same 失效
标题翻译：完全埋入接触孔及其形成方法
公开(公告)号：US5950105A
公开(公告)日：1999-09-07
申请号：US821067
申请日：1997-03-20
申请人： Woo-sang Jung , Gil-heyun Choi , Ji-soon Park , Byeong-jun Kim
发明人： Woo-sang Jung , Gil-heyun Choi , Ji-soon Park , Byeong-jun Kim
IPC分类号： H01L23/522 , H01L21/28 , H01L21/768 , H01L23/485 , H01L23/532
CPC分类号： H01L23/485 , H01L23/53223 , H01L2924/0002
摘要： A method for forming a completely buried contact hole and a semiconductor device having a completely buried contact hole in an interconnection structure is disclosed. The completely buried contact hole includes a first insulating layer of a first thermal conductivity having a contact hole formed therein. A region of material of a second thermal conductivity formed in the first insulating layer adjacent the location of the contact hole. The second thermal conductivity is greater than the first thermal conductivity such that the thermal conductivity of the region of material is greater than the thermal conductivity of the insulating layer. A metal is formed in the hole which completely buries the contact hole. The method includes forming in an insulator adjacent a contact hole a region of material of a higher thermal conductivity than the insulating layer, depositing a metal in the contact hole and heating the metal, the insulating layer and the region of material of a higher thermal conductivity to flow the metal into the contact hole so as to completely bury the contact hole.
摘要翻译：公开了一种用于形成完全埋入的接触孔的方法和在互连结构中具有完全埋入的接触孔的半导体器件。完全埋入的接触孔包括具有形成在其中的接触孔的第一导热性的第一绝缘层。形成在与接触孔的位置相邻的第一绝缘层中的第二导热材料的区域。第二热导率大于第一热导率，使得材料区域的热导率大于绝缘层的热导率。在孔中形成金属，完全埋入接触孔。该方法包括在绝缘体中邻近形成绝缘层的导热系数较高的材料区域，在接触孔中沉积金属并加热金属，绝缘层和导热系数较高的材料区域将金属流入接触孔，以完全埋入接触孔。

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