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1. 发明授权

US07875509B2 Manufacturing method of semiconductor apparatus and semiconductor apparatus, power converter using the same 有权
标题翻译：半导体装置和半导体装置的制造方法，使用其的功率转换器
公开(公告)号：US07875509B2
公开(公告)日：2011-01-25
申请号：US12103921
申请日：2008-04-16
申请人： Junichi Sakano , Kenji Hara , Shinji Shirakawa , Taiga Arai , Mutsuhiro Mori
发明人： Junichi Sakano , Kenji Hara , Shinji Shirakawa , Taiga Arai , Mutsuhiro Mori
IPC分类号： H01L21/84
CPC分类号： H01L29/7394 , H01L29/0878 , H01L29/66325 , H01L29/66681 , H01L29/7824
摘要： In a manufacturing method of a SOI type high withstand voltage semiconductor device formed on a support substrate via an insulation film, a small-sized semiconductor device having small dispersion of withstand voltage is manufactured by introducing impurities into the whole surface of a p-type or n-type SOI substrate having an impurity concentration of 2E14 cm−3 or less and serving as an active layer of the semiconductor device with an ion implantation method and thereby forming a drift layer.
摘要翻译：在通过绝缘膜形成在支撑基板上的SOI型高耐受电压半导体器件的制造方法中，通过将杂质引入p型或者p型的整个表面来制造具有小耐受电压的小分散的小型半导体器件 n型SOI衬底，其杂质浓度为2E14cm-3或更小，并且用离子注入方法用作半导体器件的有源层，从而形成漂移层。

2. 发明申请

US20080265331A1 Manufacturing method of semiconductor apparatus and semiconductor apparatus, power converter using the same 有权
标题翻译：半导体装置和半导体装置的制造方法，使用其的功率转换器
公开(公告)号：US20080265331A1
公开(公告)日：2008-10-30
申请号：US12103921
申请日：2008-04-16
申请人： Junichi Sakano , Kenji Hara , Shinji Shirakawa , Taiga Arai , Mutsuhiro Mori
发明人： Junichi Sakano , Kenji Hara , Shinji Shirakawa , Taiga Arai , Mutsuhiro Mori
IPC分类号： H01L29/00 , H01L21/00
CPC分类号： H01L29/7394 , H01L29/0878 , H01L29/66325 , H01L29/66681 , H01L29/7824
摘要： In a manufacturing method of a SOI type high withstand voltage semiconductor device formed on a support substrate via an insulation film, a small-sized semiconductor device having small dispersion of withstand voltage is manufactured by introducing impurities into the whole surface of a p-type or n-type SOI substrate having an impurity concentration of 2E14 cm−3 or less and serving as an active layer of the semiconductor device with an ion implantation method and thereby forming a drift layer.
摘要翻译：在通过绝缘膜形成在支撑基板上的SOI型高耐受电压半导体器件的制造方法中，通过将杂质引入p型或者p型的整个表面来制造具有小耐受电压的小分散的小型半导体器件 n型SOI衬底，其杂质浓度为2E14cm -3或更小，并且用离子注入方法用作半导体器件的有源层，从而形成漂移层。

3. 发明申请

US20050244713A1 Engine driving system 审中-公开
标题翻译：发动机驱动系统
公开(公告)号：US20050244713A1
公开(公告)日：2005-11-03
申请号：US11115261
申请日：2005-04-27
申请人： Kyoko Honbo , Masanori Sakai , Mutsuhiro Mori , Shinji Shirakawa , Junichi Sakano , Yasuo Kondo , Tokiyoshi Hirasawa , Masayuki Terada , Takayuki Kimura
发明人： Kyoko Honbo , Masanori Sakai , Mutsuhiro Mori , Shinji Shirakawa , Junichi Sakano , Yasuo Kondo , Tokiyoshi Hirasawa , Masayuki Terada , Takayuki Kimura
IPC分类号： F02N15/00 , F02N11/00 , F02N11/08 , F02N11/14 , H01M2/18 , H01M4/20 , H01M4/56 , H01M4/68 , H01M10/06 , H01M10/12 , H01M10/14
CPC分类号： F02N11/0862 , F02N11/0825 , F02N11/14 , H01M4/20 , H01M4/685 , H01M10/125 , H01M10/14 , Y02E60/126
摘要： Disclosed is an engine driving system having a cell suitable for restarting an engine, wherein an engine is stopped at the time of stopping running of a vehicle and the engine is restarted at the time of starting running of the vehicle, there are provided an engine electronic control device for controlling the engine, a motor for restarting the engine and a cell for supplying an electrical power to the motor; the cell comprises an anode plate formed into a thin band-shape, a cathode plate formed into a thin band-shape and a band-like separator arranged between the anode plate and the cathode plate; and the anode plate, the cathode plate and the separator form a group of wound pole plates and the group of pole plates is immersed in electrolysis solution.
摘要翻译：公开了一种发动机驱动系统，其具有适于重新启动发动机的发电机，其中在停止车辆行驶时发动机停止，并且在车辆开始行驶时重新启动发动机，提供发动机电子用于控制发动机的控制装置，用于重新启动发动机的电动机和用于向电动机供电的电池单元; 电池包括形成为薄带状的阳极板，形成为薄带状的阴极板和布置在阳极板和阴极板之间的带状隔板; 阳极板，阴极板和隔板形成一组绕组极板，并将极板组浸入电解液中。

4. 发明申请

US20050247281A1 Engine driving system 审中-公开
公开(公告)号：US20050247281A1
公开(公告)日：2005-11-10
申请号：US11168461
申请日：2005-06-29
申请人： Kyoko HONBO , Masanori Sakai , Mutsuhiro Mori , Shinji Shirakawa , Junichi Sakano , Yasuo Kondo , Tokiyoshi Hirasawa , Masayuki Terada , Takayuki Kimura
发明人： Kyoko HONBO , Masanori Sakai , Mutsuhiro Mori , Shinji Shirakawa , Junichi Sakano , Yasuo Kondo , Tokiyoshi Hirasawa , Masayuki Terada , Takayuki Kimura
IPC分类号： F02N15/00 , F02N11/00 , F02N11/08 , F02N11/14 , H01M2/18 , H01M4/20 , H01M4/56 , H01M4/68 , H01M10/06 , H01M10/12 , H01M10/14
CPC分类号： F02N11/0862 , F02N11/0825 , F02N11/14 , H01M4/20 , H01M4/685 , H01M10/125 , H01M10/14 , Y02E60/126
摘要： Disclosed is an engine driving system having a cell suitable for restarting an engine, wherein an engine is stopped at the time of stopping running of a vehicle and the engine is restarted at the time of starting running of the vehicle, there are provided an engine electronic control device for controlling the engine, a motor for restarting the engine and a cell for supplying an electrical power to the motor; the cell comprises an anode plate formed into a thin band-shape, a cathode plate formed into a thin band-shape and a band-like separator arranged between the anode plate and the cathode plate; and the anode plate, the cathode plate and the separator form a group of wound pole plates and the group of pole plates is immersed in electrolysis solution.

5. 发明申请

US20080265278A1 Semiconductor Device and Semiconductor Integrated Circuit Device for Driving Plasma Display Using the Semiconductor Device 失效
标题翻译：用于使用半导体器件驱动等离子体显示器的半导体器件和半导体集成电路器件
公开(公告)号：US20080265278A1
公开(公告)日：2008-10-30
申请号：US12103911
申请日：2008-04-16
申请人： Kenji Hara , Junichi Sakano , Shinji Shirakawa
发明人： Kenji Hara , Junichi Sakano , Shinji Shirakawa
IPC分类号： H01L29/739 , G09G5/00
CPC分类号： H01L29/7394 , G09G3/293 , G09G3/296 , G09G2330/04
摘要： A lateral IGBT structure having an emitter terminal including two or more base layers of a second conductivity-type for one collector terminal, in which the base layers of a second conductivity-type in emitter regions are covered with a first conductivity-type layer having a concentration higher than that of a drift layer so that a silicon layer between the first conductivity-type layer covering the emitter regions and a buried oxide film has a reduced resistance to increase current flowing to an emitter farther from the collector to thereby enhance the current density.
摘要翻译：一种横向IGBT结构，其具有包括两个或更多个用于一个集电极端子的第二导电类型的基底层的发射极端子，其中发射极区域中的第二导电类型的基极层被第一导电类型层覆盖，所述第一导电类型层具有浓度高于漂移层的浓度，使得覆盖发射极区域的第一导电类型层和掩埋氧化物膜之间的硅层具有降低的电阻，从而增加流向离集电极更远的发射极的电流，从而提高电流密度。

6. 发明授权

US08384124B2 Semiconductor device and semiconductor integrated circuit device for driving plasma display using the semiconductor device 失效
标题翻译：半导体装置及使用该半导体装置驱动等离子体显示的半导体集成电路装置
公开(公告)号：US08384124B2
公开(公告)日：2013-02-26
申请号：US12707884
申请日：2010-02-18
申请人： Kenji Hara , Junichi Sakano , Shinji Shirakawa
发明人： Kenji Hara , Junichi Sakano , Shinji Shirakawa
IPC分类号： H01L29/02
CPC分类号： H01L29/7394 , G09G3/296 , G09G2330/04 , H01L27/0248
摘要： The output circuit uses an IGBT incorporating a normal latch-up operation measure and the ESD clamp circuit uses an IGBT that can more easily latch up than the output circuit device which has the latch-up prevention layer lowered in impurity density or removed.
摘要翻译：输出电路使用包含正常闩锁操作措施的IGBT，并且ESD钳位电路使用可以比具有防止闩锁的层的输出电路器件更容易闩锁的IGBT，该输出电路器件的杂质密度降低或去除。

7. 发明申请

US20090315072A1 Semiconductor Device, Semiconductor Integrated Circuit Equipment Using the Same for Driving Plasma Display, and Plasma Display Unit 审中-公开
标题翻译：半导体器件，使用其的驱动等离子体显示器的半导体集成电路设备和等离子体显示单元
公开(公告)号：US20090315072A1
公开(公告)日：2009-12-24
申请号：US12487299
申请日：2009-06-18
申请人： Shinji Shirakawa , Junichi Sakano , Kenji Hara
发明人： Shinji Shirakawa , Junichi Sakano , Kenji Hara
IPC分类号： H01L29/739
CPC分类号： H01L29/7394 , H01L29/0696
摘要： In a lateral IGBT structure equipped with an emitter terminal, comprising two or more second conductivity type base layers, per one collector terminal, the second conductivity type base layer in the emitter region is covered by a first conductivity type layer which has a higher impurity concentration than the drift layer, and width L1 of the gate electrode located between two adjacent emitters is 4 μm or less, or in addition to that, width L2 of the opening for leading out an emitter electrode located between two adjacent gate electrodes is 3 μm or less.
摘要翻译：在具有发射极端子的横向IGBT结构中，每个集电极端子包括两个或更多个第二导电型基极层，发射极区域中的第二导电类型基极层被具有较高杂质浓度的第一导电型层覆盖位于两个相邻的发射极之间的栅电极的宽度L1为4μm以下，或者除此以外，用于引出位于两个相邻的栅电极之间的发射电极的开口的宽度L2为3μm或减。

8. 发明授权

US07948058B2 Semiconductor device and semiconductor integrated circuit device for driving plasma display using the semiconductor device 失效
标题翻译：半导体装置及使用该半导体装置驱动等离子体显示的半导体集成电路装置
公开(公告)号：US07948058B2
公开(公告)日：2011-05-24
申请号：US12103911
申请日：2008-04-16
申请人： Kenji Hara , Junichi Sakano , Shinji Shirakawa
发明人： Kenji Hara , Junichi Sakano , Shinji Shirakawa
IPC分类号： H01L29/00
CPC分类号： H01L29/7394 , G09G3/293 , G09G3/296 , G09G2330/04
摘要： A lateral IGBT structure having an emitter terminal including two or more base layers of a second conductivity-type for one collector terminal, in which the base layers of a second conductivity-type in emitter regions are covered with a first conductivity-type layer having a concentration higher than that of a drift layer so that a silicon layer between the first conductivity-type layer covering the emitter regions and a buried oxide film has a reduced resistance to increase current flowing to an emitter farther from the collector to thereby enhance the current density.
摘要翻译：一种横向IGBT结构，其具有包括两个或更多个用于一个集电极端子的第二导电类型的基底层的发射极端子，其中发射极区域中的第二导电类型的基极层被第一导电类型层覆盖，所述第一导电类型层具有浓度高于漂移层的浓度，使得覆盖发射极区域的第一导电类型层和掩埋氧化物膜之间的硅层具有降低的电阻，从而增加流向离集电极更远的发射极的电流，从而提高电流密度。

9. 发明申请

US20100165681A1 SEMICONDUCTOR DEVICE AND POWER CONVERTER USING THE SAME 审中-公开
标题翻译：半导体器件和功率转换器
公开(公告)号：US20100165681A1
公开(公告)日：2010-07-01
申请号：US12646990
申请日：2009-12-24
申请人： Junichi Sakano , Kenji Hara , Shinji Shirakawa
发明人： Junichi Sakano , Kenji Hara , Shinji Shirakawa
IPC分类号： H02M7/06 , H03K17/687
CPC分类号： H03K17/163 , H03K17/6877
摘要： In a driving circuit, for controlling the turning on and off of a main semiconductor switching device of an insulated gate type, in an insulated gate semiconductor switching device for electric power conversion, bipolar semiconductor devices of an insulated gate control type, particularly insulated gate bipolar transistors (IGBTs) are used at the output stage of a circuit that controls the gate voltage of the main semiconductor switching device.
摘要翻译：在用于控制绝缘栅型主半导体开关器件的导通和截止的驱动电路中，在用于电力转换的绝缘栅半导体开关器件中，绝缘栅极控制型双极半导体器件，特别是绝缘栅极双极型在控制主半导体开关器件的栅极电压的电路的输出级使用晶体管（IGBT）。

10. 发明授权

US08487343B2 Semiconductor device, semiconductor integrated circuit device for use of driving plasma display with using same, and plasma display apparatus 失效
标题翻译：半导体装置，使用该驱动等离子体显示器的半导体集成电路装置以及等离子体显示装置
公开(公告)号：US08487343B2
公开(公告)日：2013-07-16
申请号：US12825839
申请日：2010-06-29
申请人： Shinji Shirakawa , Junichi Sakano , Kenji Hara
发明人： Shinji Shirakawa , Junichi Sakano , Kenji Hara
IPC分类号： H01L29/739
CPC分类号： H01L29/7394 , H01L29/0696
摘要： A horizontal-type IGBT having a large current density, which is formed on a SOI substrate, has an emitter region, which is made up with two (2) or more of base-layers of a second conductivity-type on an oxide film groove, wherein the base-layers of the second conductivity-type in the emitter region are covered with a layer of a first conductivity-type, being high in the conductivity than a drift layer, and length of a gate electrode on the oxide film groove is reduced than the length of the gate electrode on the collector, and further the high-density layer of the first conductivity-type is formed below the base layer of the second conductivity-type on the collector, thereby achieving the high density of the layer of the first conductivity-type while maintaining an endurable voltage, and an increase of the current density.
摘要翻译：形成在SOI衬底上的具有大电流密度的水平型IGBT具有发射极区域，其在氧化物膜沟槽上由二（2）个或更多个第二导电类型的基底层构成其特征在于，所述发射极区域中的所述第二导电型的基极层被覆盖有比漂移层高的导电性的第一导电型层，所述氧化物膜沟槽上的栅电极的长度为比集电体上的栅电极的长度小，并且在集电体上形成第二导电类型的基底层下方的第一导电型高密度层，从而实现层间的高密度化第一导电型，同时保持耐久电压，并增加电流密度。

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