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1. 发明申请

US20170221964A1 MAGNETIC MEMORY ELEMENT AND MAGNETIC MEMORY 有权
公开(公告)号：US20170221964A1
公开(公告)日：2017-08-03
申请号：US15491078
申请日：2017-04-19
申请人： Kabushiki Kaisha Toshiba
发明人： Takuya Shimada , Hirofumi Morise , Shiho Nakamura , Tsuyoshi Kondo , Yasuaki Ootera , Michael Arnaud Quinsat
IPC分类号： H01L27/22 , G11C11/16 , H01L43/10 , H01L43/12 , H01L43/02 , H01L43/08
CPC分类号： H01L27/228 , G11C11/161 , G11C11/1659 , G11C11/1673 , G11C11/1675 , G11C11/1697 , G11C19/0808 , G11C19/0841 , H01L43/02 , H01L43/08 , H01L43/10 , H01L43/12
摘要： According to one embodiment, a magnetic memory element comprises a first magnetic unit, a second magnetic unit, a first insulating unit, a first electrode, a second electrode, and a third electrode. The first magnetic unit includes a plurality of magnetic domains. The second magnetic unit includes a first region and a second region. The first region includes a conductive material. The second region includes an insulating material. At least one of the first region or the second region is magnetic. The first insulating unit is provided between the first magnetic unit and the second magnetic unit. The first electrode and the second electrode are connected to the first magnetic unit. A part of the second magnetic unit and a part of the first insulating unit are provided between the third electrode and a part of the first magnetic unit.

2. 发明授权

US09515123B2 Magnetic memory device and magnetic memory 有权
标题翻译：磁存储器和磁存储器
公开(公告)号：US09515123B2
公开(公告)日：2016-12-06
申请号：US15053461
申请日：2016-02-25
申请人： KABUSHIKI KAISHA TOSHIBA
发明人： Shiho Nakamura , Michael Arnaud Quinsat , Tsuyoshi Kondo
IPC分类号： H01L43/00 , H01L27/22 , H01L43/02 , H01L43/08 , H01L43/10
CPC分类号： H01L27/222 , G11C19/0841 , H01L43/10
摘要： A magnetic memory device according to an embodiment includes a first magnetic section, a read section, and a write section. The first magnetic section includes an extending portion. The extending portion extends in a first direction. The extending portion has a first interface and a second interface. The extending portion includes magnetic domains arranged along the first direction. Magnetization easy axis of the extending portion is directed along a second direction. The extending portion includes a first region and a second region. The first region contains at least one first element selected from a first group consisting of gadolinium, terbium, dysprosium, neodymium, and holmium. The second region contains at least one second element selected from a second group consisting of iron, cobalt, nickel, boron, silicon, and phosphorus. Concentration of the first element in the second region is lower than concentration of the first element in the first region.
摘要翻译：根据实施例的磁存储器件包括第一磁性部分，读取部分和写入部分。第一磁性部分包括延伸部分。延伸部分沿第一方向延伸。延伸部具有第一界面和第二界面。延伸部分包括沿第一方向布置的磁畴。延伸部分的易磁化轴线沿着第二方向被引导。延伸部分包括第一区域和第二区域。第一区域包含至少一种选自由钆，铽，镝，钕和钬组成的第一组的第一元素。第二区域包含至少一个选自铁，钴，镍，硼，硅和磷的第二组中的第二元素。第二区域中的第一元素的浓度低于第一区域中的第一元素的浓度。

3. 发明授权

US09293696B2 Magnetic memory and shift register memory 有权
标题翻译：磁存储器和移位寄存器存储器
公开(公告)号：US09293696B2
公开(公告)日：2016-03-22
申请号：US14704359
申请日：2015-05-05
申请人： KABUSHIKI KAISHA TOSHIBA
发明人： Yasuaki Ootera , Takuya Shimada , Tsuyoshi Kondo , Hirofumi Morise , Michael Arnaud Quinsat , Shiho Nakamura
IPC分类号： H01L29/82 , H01L43/08 , H01L43/02 , H01L27/22
CPC分类号： G11C19/0841 , G11C11/161 , G11C11/1659 , G11C11/1675 , G11C19/0808
摘要： According to one embodiment, a magnetic memory includes a first magnetic unit, a first magnetic layer, a first recording/reproducing element, a first electrode, and a second electrode. The first magnetic unit extends in a first direction. The first magnetic unit includes a plurality of magnetic domains arranged in the first direction. The first magnetic unit has a columnar configuration having a hollow portion. The first magnetic layer is connected to a first end portion of the first magnetic unit, the first magnetic layer extends in a direction intersecting the first direction. The first recording/reproducing element is provided in contact with the first magnetic layer. The first electrode is electrically connected to the first magnetic layer. The second electrode is connected to a second end portion of the first magnetic unit on a side opposite to the first end portion.
摘要翻译：根据一个实施例，磁存储器包括第一磁性单元，第一磁性层，第一记录/再现元件，第一电极和第二电极。第一磁性单元沿第一方向延伸。第一磁性单元包括沿第一方向布置的多个磁畴。第一磁性单元具有中空部分的柱状结构。第一磁性层连接到第一磁性单元的第一端部，第一磁性层沿与第一方向相交的方向延伸。第一记录/再现元件设置成与第一磁性层接触。第一电极电连接到第一磁性层。第二电极在与第一端部相对的一侧连接到第一磁性单元的第二端部。

4. 发明授权

US09171888B2 Magnetic memory device and driving method for the same 有权
标题翻译：磁记忆体装置及其驱动方法相同
公开(公告)号：US09171888B2
公开(公告)日：2015-10-27
申请号：US14445331
申请日：2014-07-29
申请人： KABUSHIKI KAISHA TOSHIBA
发明人： Michael Arnaud Quinsat , Tetsufumi Tanamoto , Shiho Nakamura
IPC分类号： G11C11/00 , H01L27/22 , H01L43/02 , G11C11/16
CPC分类号： H01L27/228 , G11C11/16 , G11C11/161 , G11C11/1653 , G11C11/1659 , G11C11/1673 , G11C11/1675 , G11C11/1693 , G11C19/0841 , H01L27/222 , H01L43/02
摘要： According to one embodiment, a magnetic memory device includes a magnetic unit, a switching part, and a reading part. The magnetic unit includes a magnetic wire, and first and second magnetic parts. The magnetic wire includes magnetic domains and has one end and one other end. The first magnetic part is connected with the one end and has a first magnetization. The second magnetic part is connected with the one end, and has a second magnetization. The switching part includes first and second switches. The first switch is connected with the first magnetic part and flows a first current between the first magnetic part and the magnetic wire. The second switch is connected with the second magnetic part and flows a second current between the second magnetic part and the magnetic wire. The reading part is configured to read a magnetization of the magnetic domains.
摘要翻译：根据一个实施例，磁存储器件包括磁性单元，开关部件和读取部件。磁性单元包括磁线，以及第一和第二磁性部分。磁线包括磁畴并具有一端和另一端。第一磁性部分与一端连接并具有第一磁化。第二磁性部分与一端连接，并具有第二磁化强度。开关部分包括第一和第二开关。第一开关与第一磁性部分连接，并且在第一磁性部分和电磁线之间流动第一电流。第二开关与第二磁性部分连接，并在第二磁性部分和磁性线之间流动第二电流。读取部分被配置为读取磁畴的磁化。

5. 发明授权

US10388350B2 Memory system, semiconductor storage device, and signal processing system 有权
公开(公告)号：US10388350B2
公开(公告)日：2019-08-20
申请号：US15911211
申请日：2018-03-05
申请人： Kabushiki Kaisha Toshiba
发明人： Daisuke Saida , Yousuke Isowaki , Michael Arnaud Quinsat , Kenichiro Yamada , Kosuke Tatsumura
IPC分类号： G11C11/16 , G06N7/00
摘要： A memory system has a nonvolatile memory having a plurality of readable and writable memory cells, a write voltage control unit that controls at least one of a voltage value and a pulse width of a write voltage of the nonvolatile memory in accordance with a weight of a signal processing path or a signal processing node, a write unit that writes data in two or more memory cell groups among the plurality of memory cells using the write voltage controlled by the write voltage control unit, a reversal probability detection unit that detects a reversal probability of the memory cell group when writing data is written by the write unit, and a weight conversion unit that converts the detected reversal probability into a weight.

6. 发明授权

US09548093B2 Magnetic memory element and magnetic memory 有权
标题翻译：磁存储元件和磁存储器
公开(公告)号：US09548093B2
公开(公告)日：2017-01-17
申请号：US14722707
申请日：2015-05-27
申请人： Kabushiki Kaisha Toshiba
发明人： Takuya Shimada , Hirofumi Morise , Shiho Nakamura , Tsuyoshi Kondo , Yasuaki Ootera , Michael Arnaud Quinsat
IPC分类号： G11C11/16 , H01L43/08
CPC分类号： G11C11/161 , G11C11/1659 , G11C11/1673 , G11C11/1675 , G11C19/0841
摘要： A magnetic memory element includes a first magnetic unit, a second magnetic unit, a third magnetic unit, a read/write unit, a first electrode, a second electrode, a third electrode, a first current source, the second current source. The third magnetic unit is connected to one end in the first direction of the first magnetic unit and one end in the first direction of the second magnetic unit. The read/write unit includes a nonmagnetic layer and a pinned layer. The nonmagnetic layer is connected to the third magnetic unit. The pinned layer is connected to the nonmagnetic layer. The first current source causes a current to flow between the third electrode and at least one of the first electrode or the second electrode. The second current source causes a current to flow between the first electrode and the second electrode.
摘要翻译：磁存储元件包括第一磁单元，第二磁单元，第三磁单元，读/写单元，第一电极，第二电极，第三电极，第一电流源，第二电流源。第三磁性单元连接到第一磁性单元的第一方向的一端和第二磁性单元的第一方向的一端。读/写单元包括非磁性层和固定层。非磁性层连接到第三磁性单元。固定层连接到非磁性层。第一电流源导致电流在第三电极和第一电极或第二电极中的至少一个之间流动。第二电流源导致电流在第一电极和第二电极之间流动。

7. 发明授权

US09659996B2 Magnetic memory element and magnetic memory 有权
公开(公告)号：US09659996B2
公开(公告)日：2017-05-23
申请号：US14921472
申请日：2015-10-23
申请人： KABUSHIKI KAISHA TOSHIBA
发明人： Takuya Shimada , Hirofumi Morise , Shiho Nakamura , Tsuyoshi Kondo , Yasuaki Ootera , Michael Arnaud Quinsat
IPC分类号： H01L29/66 , H01L27/22 , H01L43/08 , G11C11/16 , G11C19/08
CPC分类号： H01L27/228 , G11C11/161 , G11C11/1659 , G11C11/1673 , G11C11/1675 , G11C11/1697 , G11C19/0808 , G11C19/0841 , H01L43/02 , H01L43/08 , H01L43/10 , H01L43/12
摘要： According to one embodiment, a magnetic memory element comprises a first magnetic unit, a second magnetic unit, a first insulating unit, a first electrode, a second electrode, and a third electrode. The first magnetic unit includes a plurality of magnetic domains. The second magnetic unit includes a first region and a second region. The first region includes a conductive material. The second region includes an insulating material. At least one of the first region or the second region is magnetic. The first insulating unit is provided between the first magnetic unit and the second magnetic unit. The first electrode and the second electrode are connected to the first magnetic unit. A part of the second magnetic unit and a part of the first insulating unit are provided between the third electrode and a part of the first magnetic unit.

8. 发明申请

US20160055892A1 Magnetic Memory Element and Magnetic Memory 有权
标题翻译：磁存储元件和磁存储器
公开(公告)号：US20160055892A1
公开(公告)日：2016-02-25
申请号：US14722707
申请日：2015-05-27
申请人： Kabushiki Kaisha Toshiba
发明人： Takuya SHIMADA , Hirofumi Morise , Shiho Nakamura , Tsuyoshi Kondo , Yasuaki Ootera , Michael Arnaud Quinsat
IPC分类号： G11C11/16
CPC分类号： G11C11/161 , G11C11/1659 , G11C11/1673 , G11C11/1675 , G11C19/0841
摘要： According to one embodiment, a magnetic memory element includes a first magnetic unit, a second magnetic unit, a third magnetic unit, a read/write unit, a first electrode, a second electrode, a third electrode, a first current source, the second current source. The third magnetic unit is connected to one end in the first direction of the first magnetic unit and one end in the first direction of the second magnetic unit. The read/write unit includes a nonmagnetic layer and a pinned layer. The nonmagnetic layer is connected to the third magnetic unit. The pinned layer is connected to the nonmagnetic layer. The first current source causes a current to flow between the third electrode and at least one of the first electrode or the second electrode. The second current source causes a current to flow between the first electrode and the second electrode.
摘要翻译：根据一个实施例，磁存储元件包括第一磁单元，第二磁单元，第三磁单元，读/写单元，第一电极，第二电极，第三电极，第一电流源，第二电流源当前来源。第三磁性单元连接到第一磁性单元的第一方向的一端和第二磁性单元的第一方向的一端。读/写单元包括非磁性层和固定层。非磁性层连接到第三磁性单元。固定层连接到非磁性层。第一电流源导致电流在第三电极和第一电极或第二电极中的至少一个之间流动。第二电流源导致电流在第一电极和第二电极之间流动。

9. 发明授权

US09779835B1 Magnetic memory device 有权
公开(公告)号：US09779835B1
公开(公告)日：2017-10-03
申请号：US15438856
申请日：2017-02-22
申请人： KABUSHIKI KAISHA TOSHIBA
发明人： Michael Arnaud Quinsat , Takuya Shimada , Hirofumi Morise , Masaki Kado , Yasuaki Ootera , Tsuyoshi Kondo , Shiho Nakamura
IPC分类号： G11C19/08 , H01L43/02
CPC分类号： G11C19/0841 , H01L43/02 , H01L43/08
摘要： According to one embodiment, a magnetic memory device includes an element unit and a controller. The element unit includes a magnetic member, a first magnetic layer, a second magnetic layer, an intermediate layer, and a non-magnetic layer. The magnetic member includes a first region, a first portion, and a second portion. The first region is provided between the first portion and the second portion, or included in the first portion. The first magnetic layer is apart from the first region in a first direction. The second magnetic layer is provided between the first region and the first magnetic layer. The intermediate layer is provided between the first magnetic layer and the second magnetic layer. The intermediate layer is non-magnetic. The non-magnetic layer is connected with the first region. The controller is configured to supply a writing current and a shift current to the element unit.

10. 发明申请

US20170229640A1 MAGNETIC MEMORY DEVICE 审中-公开
公开(公告)号：US20170229640A1
公开(公告)日：2017-08-10
申请号：US15267418
申请日：2016-09-16
申请人： KABUSHIKI KAISHA TOSHIBA
发明人： Masaki KADO , Tsuyoshi KONDO , Hirofumi MORISE , Yasuaki OOTERA , Takuya SHIMADA , Michael Arnaud Quinsat , Shiho NAKAMURA
IPC分类号： H01L43/02 , H01L43/12 , H01L43/10 , H01L27/22 , H01L43/08
CPC分类号： G11C11/1675 , G11C19/0841
摘要： According to one embodiment, a magnetic memory device includes a first magnetic body and a second magnetic body. The first magnetic body extends in a first direction. The second magnetic body extends in the first direction. A distance between the second magnetic body and the first magnetic body changes periodically along the first direction.

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