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1. 发明申请

US20170221964A1 MAGNETIC MEMORY ELEMENT AND MAGNETIC MEMORY 有权
公开(公告)号：US20170221964A1
公开(公告)日：2017-08-03
申请号：US15491078
申请日：2017-04-19
申请人： Kabushiki Kaisha Toshiba
发明人： Takuya Shimada , Hirofumi Morise , Shiho Nakamura , Tsuyoshi Kondo , Yasuaki Ootera , Michael Arnaud Quinsat
IPC分类号： H01L27/22 , G11C11/16 , H01L43/10 , H01L43/12 , H01L43/02 , H01L43/08
CPC分类号： H01L27/228 , G11C11/161 , G11C11/1659 , G11C11/1673 , G11C11/1675 , G11C11/1697 , G11C19/0808 , G11C19/0841 , H01L43/02 , H01L43/08 , H01L43/10 , H01L43/12
摘要： According to one embodiment, a magnetic memory element comprises a first magnetic unit, a second magnetic unit, a first insulating unit, a first electrode, a second electrode, and a third electrode. The first magnetic unit includes a plurality of magnetic domains. The second magnetic unit includes a first region and a second region. The first region includes a conductive material. The second region includes an insulating material. At least one of the first region or the second region is magnetic. The first insulating unit is provided between the first magnetic unit and the second magnetic unit. The first electrode and the second electrode are connected to the first magnetic unit. A part of the second magnetic unit and a part of the first insulating unit are provided between the third electrode and a part of the first magnetic unit.

2. 发明申请

US20140119111A1 MAGNETIC MEMORY INCLUDING MAGNETIC NANOWIRE AND WRITE METHOD THEREIN 有权
标题翻译：磁记忆包括磁性纳米及其写入方法
公开(公告)号：US20140119111A1
公开(公告)日：2014-05-01
申请号：US14044089
申请日：2013-10-02
申请人： Kabushiki Kaisha Toshiba
发明人： Shiho Nakamura , Tsuyoshi Kondo , Hirofumi Morise , Takuya Shimada
IPC分类号： H01L43/02 , G11C11/16
CPC分类号： H01L43/02 , B82Y25/00 , G11C11/161 , G11C11/1673 , G11C11/1675 , G11C11/18 , H01F1/0072 , H01L27/222 , H01L43/08 , Y10S977/933 , Y10S977/935
摘要： A magnetic memory according to an embodiment includes: a magnetic nanowire; a first electrode and a second electrode provided to different locations of the magnetic nanowire; a third electrode including a magnetic layer, the third electrode being provided to a location of the magnetic nanowire between the first electrode and the second electrode; an intermediate layer provided between the magnetic nanowire and the third electrode, the intermediate layer being in contact with the magnetic nanowire and the third electrode; a fourth electrode of a nonmagnetic material provided onto the magnetic nanowire and being on the opposite side of the magnetic wire from the third electrode; and an insulating layer provided between the magnetic nanowire and the fourth electrode, the insulating layer being in contact with the magnetic nanowire and the fourth electrode.
摘要翻译：根据实施例的磁存储器包括：磁性纳米线; 设置在所述磁性纳米线的不同位置的第一电极和第二电极; 包括磁性层的第三电极，所述第三电极设置在所述第一电极和所述第二电极之间的所述磁性纳米线的位置; 设置在所述磁性纳米线与所述第三电极之间的中间层，所述中间层与所述磁性纳米线和所述第三电极接触; 设置在所述磁性纳米线上并且位于与所述第三电极相对的所述磁性线的相反侧的非磁性材料的第四电极; 以及设置在所述磁性纳米线与所述第四电极之间的绝缘层，所述绝缘层与所述磁性纳米线和所述第四电极接触。

3. 发明授权

US09659996B2 Magnetic memory element and magnetic memory 有权
公开(公告)号：US09659996B2
公开(公告)日：2017-05-23
申请号：US14921472
申请日：2015-10-23
申请人： KABUSHIKI KAISHA TOSHIBA
发明人： Takuya Shimada , Hirofumi Morise , Shiho Nakamura , Tsuyoshi Kondo , Yasuaki Ootera , Michael Arnaud Quinsat
IPC分类号： H01L29/66 , H01L27/22 , H01L43/08 , G11C11/16 , G11C19/08
CPC分类号： H01L27/228 , G11C11/161 , G11C11/1659 , G11C11/1673 , G11C11/1675 , G11C11/1697 , G11C19/0808 , G11C19/0841 , H01L43/02 , H01L43/08 , H01L43/10 , H01L43/12
摘要： According to one embodiment, a magnetic memory element comprises a first magnetic unit, a second magnetic unit, a first insulating unit, a first electrode, a second electrode, and a third electrode. The first magnetic unit includes a plurality of magnetic domains. The second magnetic unit includes a first region and a second region. The first region includes a conductive material. The second region includes an insulating material. At least one of the first region or the second region is magnetic. The first insulating unit is provided between the first magnetic unit and the second magnetic unit. The first electrode and the second electrode are connected to the first magnetic unit. A part of the second magnetic unit and a part of the first insulating unit are provided between the third electrode and a part of the first magnetic unit.

4. 发明授权

US09858974B1 Magnetic memory 有权
公开(公告)号：US09858974B1
公开(公告)日：2018-01-02
申请号：US15444928
申请日：2017-02-28
申请人： KABUSHIKI KAISHA TOSHIBA
发明人： Tsuyoshi Kondo , Takuya Shimada , Yasuaki Ootera
IPC分类号： G11C11/00 , G11C11/16 , H01L43/02 , H01L43/08 , H01L27/22
CPC分类号： G11C11/161 , G11C11/1659 , G11C11/1673 , G11C11/1675 , H01L27/224 , H01L27/228 , H01L43/02 , H01L43/08
摘要： According to embodiments, a magnetic memory includes a structure including a first magnetic layer and a conductive layer, a second magnetic layer, a first electrode electrically 5 connected to a first portion of the structure, a second electrode provided between the first magnetic layer and the second, magnetic layer, a third magnetic layer provided insulatingly from a third portion of the structure, a third electrode electrically connected to a second portion of the 10 structure and a sixth magnetic layer provided between the first electrode and the second electrode is provided. In addition, the magnetic memory includes a first semiconductor layer having a first conductivity type electrically connected to the first electrode, a second semiconductor layer having the first conductivity type electrically connected to the third magnetic layer, and a third semiconductor layer having a second conductivity type electrically connected to the first semiconductor layer and the second semiconductor layer.

5. 发明授权

US09779835B1 Magnetic memory device 有权
公开(公告)号：US09779835B1
公开(公告)日：2017-10-03
申请号：US15438856
申请日：2017-02-22
申请人： KABUSHIKI KAISHA TOSHIBA
发明人： Michael Arnaud Quinsat , Takuya Shimada , Hirofumi Morise , Masaki Kado , Yasuaki Ootera , Tsuyoshi Kondo , Shiho Nakamura
IPC分类号： G11C19/08 , H01L43/02
CPC分类号： G11C19/0841 , H01L43/02 , H01L43/08
摘要： According to one embodiment, a magnetic memory device includes an element unit and a controller. The element unit includes a magnetic member, a first magnetic layer, a second magnetic layer, an intermediate layer, and a non-magnetic layer. The magnetic member includes a first region, a first portion, and a second portion. The first region is provided between the first portion and the second portion, or included in the first portion. The first magnetic layer is apart from the first region in a first direction. The second magnetic layer is provided between the first region and the first magnetic layer. The intermediate layer is provided between the first magnetic layer and the second magnetic layer. The intermediate layer is non-magnetic. The non-magnetic layer is connected with the first region. The controller is configured to supply a writing current and a shift current to the element unit.

6. 发明授权

US09705073B2 Magnetic memory element and magnetic memory 有权
公开(公告)号：US09705073B2
公开(公告)日：2017-07-11
申请号：US15248472
申请日：2016-08-26
申请人： KABUSHIKI KAISHA TOSHIBA
发明人： Hirofumi Morise , Tsuyoshi Kondo , Yasuaki Ootera , Takuya Shimada , Michael Arnaud Quinsat , Shiho Nakamura
IPC分类号： G11C11/06 , H01L43/02 , H01L43/08 , H01L43/10 , H01L27/22 , G11C11/16 , G11C11/067
CPC分类号： H01L43/02 , G11C11/067 , G11C11/155 , G11C11/161 , G11C11/1653 , G11C11/1659 , G11C11/1673 , G11C11/1675 , H01L27/226 , H01L43/08 , H01L43/10
摘要： According to one embodiment, a magnetic memory element includes a first magnetic unit, a second magnetic unit, a nonmagnetic unit, and a controller. The second magnetic unit includes a first portion and a second portion. The first portion includes a first region and a second region. The controller performs a first operation and a second operation. In the first operation, the controller changes a direction of a magnetization of the first region by causing a first current to flow through the first portion in a first current direction. The first current has a first current value. In the second operation, the controller changes a direction of a magnetization of the second region by causing a second current to flow through the first portion in a second current direction. The second current has a second current value. The second current value is less than the first current value.

7. 发明授权

US08958241B2 Magnetic memory 有权
标题翻译：磁记忆
公开(公告)号：US08958241B2
公开(公告)日：2015-02-17
申请号：US14021096
申请日：2013-09-09
申请人： Kabushiki Kaisha Toshiba
发明人： Tsuyoshi Kondo , Hirofumi Morise , Shiho Nakamura , Takuya Shimada , Yoshiaki Fukuzumi , Hideaki Aochi
IPC分类号： G11C11/14 , G11C11/02 , B82Y10/00
CPC分类号： G11C11/02 , B82Y10/00 , G11C11/161 , G11C11/1675 , G11C19/0808 , G11C19/0841 , G11C21/00 , G11C2213/52 , Y10S977/762 , Y10S977/838 , Y10S977/943
摘要： A magnetic memory according to an embodiment includes: a magnetic nanowire; first insulating layers provided on a first surface of the magnetic nanowire, each of the first insulating layers having a first and second end faces, a thickness of the first insulating layer over the first end face being thicker than a thickness of the first insulating layer over the second end face; first electrodes on surfaces of the first insulating layers opposite to the first surface; second insulating layers on the second surface of the magnetic nanowire, each of the second insulating layers having a third and fourth end faces, a thickness of the second insulating layer over the third surface being thicker than a thickness of the second insulating layer over the fourth end face; and second electrodes on surfaces of the second insulating layers.
摘要翻译：根据实施例的磁存储器包括：磁性纳米线; 设置在所述磁性纳米线的第一表面上的第一绝缘层，每个所述第一绝缘层具有第一和第二端面，所述第一端面上的所述第一绝缘层的厚度比所述第一绝缘层的厚度厚第二个端面; 所述第一绝缘层与所述第一表面相对的表面上的第一电极; 在所述磁性纳米线的第二表面上的第二绝缘层，每个所述第二绝缘层具有第三和第四端面，所述第三绝缘层的厚度在所述第三表面上比第四绝缘层厚度大端面以及在第二绝缘层的表面上的第二电极。

8. 发明授权

US09886199B2 Magnetic memory device and magnetic storage method 有权
公开(公告)号：US09886199B2
公开(公告)日：2018-02-06
申请号：US15007794
申请日：2016-01-27
申请人： KABUSHIKI KAISHA TOSHIBA
发明人： Tsuyoshi Kondo , Hirofumi Morise , Yasuaki Ootera , Takuya Shimada , Michael Amaud Quinsat , Yoshiaki Osada , Yoshihisa Iwata
IPC分类号： G06F3/06 , G11C11/16 , G11C19/02 , G11C19/08
CPC分类号： G06F3/061 , G06F3/0655 , G06F3/0683 , G11C11/161 , G11C11/1659 , G11C11/1673 , G11C11/1675 , G11C19/02 , G11C19/0808
摘要： According to one embodiment, a magnetic memory device includes a first memory unit including a first memory array and a first drive unit, a second memory unit including a second memory array and a second drive unit, and a controller. The first memory array includes a first magnetic shift register unit. The second memory array includes a second magnetic shift register unit. The controller subdivides input data into a plurality of one-dimensional bit input arrays. The one-dimensional bit input arrays include a first array and a second array. The controller stores the first array in the first magnetic shift register unit on a last in, first out basis, and stores the second array in the second magnetic shift register unit on a last in, first out basis.

9. 发明授权

US09653678B2 Magnetic memory, magnetic memory device, and operation method of magnetic memory 有权
公开(公告)号：US09653678B2
公开(公告)日：2017-05-16
申请号：US14562790
申请日：2014-12-08
申请人： KABUSHIKI KAISHA TOSHIBA
发明人： Shiho Nakamura , Yasuaki Ootera , Takuya Shimada
IPC分类号： H01L43/08 , H01L43/02 , G11C11/16
CPC分类号： H01L43/08 , G11C11/161 , G11C11/1659 , G11C11/1673 , G11C11/1675 , G11C2213/71 , H01L43/02
摘要： A magnetic memory includes a magnetic thin line including a plurality of magnetic domains, a reference layer having a magnetization, a nonmagnetic layer, a first fixed magnetization part having a magnetization, a second fixed magnetization part having a magnetization, a first electrode, a second electrode, and a third electrode.

10. 发明授权

US09548093B2 Magnetic memory element and magnetic memory 有权
标题翻译：磁存储元件和磁存储器
公开(公告)号：US09548093B2
公开(公告)日：2017-01-17
申请号：US14722707
申请日：2015-05-27
申请人： Kabushiki Kaisha Toshiba
发明人： Takuya Shimada , Hirofumi Morise , Shiho Nakamura , Tsuyoshi Kondo , Yasuaki Ootera , Michael Arnaud Quinsat
IPC分类号： G11C11/16 , H01L43/08
CPC分类号： G11C11/161 , G11C11/1659 , G11C11/1673 , G11C11/1675 , G11C19/0841
摘要： A magnetic memory element includes a first magnetic unit, a second magnetic unit, a third magnetic unit, a read/write unit, a first electrode, a second electrode, a third electrode, a first current source, the second current source. The third magnetic unit is connected to one end in the first direction of the first magnetic unit and one end in the first direction of the second magnetic unit. The read/write unit includes a nonmagnetic layer and a pinned layer. The nonmagnetic layer is connected to the third magnetic unit. The pinned layer is connected to the nonmagnetic layer. The first current source causes a current to flow between the third electrode and at least one of the first electrode or the second electrode. The second current source causes a current to flow between the first electrode and the second electrode.
摘要翻译：磁存储元件包括第一磁单元，第二磁单元，第三磁单元，读/写单元，第一电极，第二电极，第三电极，第一电流源，第二电流源。第三磁性单元连接到第一磁性单元的第一方向的一端和第二磁性单元的第一方向的一端。读/写单元包括非磁性层和固定层。非磁性层连接到第三磁性单元。固定层连接到非磁性层。第一电流源导致电流在第三电极和第一电极或第二电极中的至少一个之间流动。第二电流源导致电流在第一电极和第二电极之间流动。

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