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1. 发明授权

US09472713B2 Semiconductor light-emitting device 有权
标题翻译：半导体发光装置
公开(公告)号：US09472713B2
公开(公告)日：2016-10-18
申请号：US14082864
申请日：2013-11-18
申请人： KABUSHIKI KAISHA TOSHIBA
发明人： Koichi Genei , Tokuhiko Matsunaga , Katsufumi Kondo , Shinji Nunotani
IPC分类号： H01L33/12 , H01L33/38 , H01L33/00 , H01L33/14 , H01L33/40 , H01L33/30
CPC分类号： H01L33/0025 , H01L33/14 , H01L33/30 , H01L33/38 , H01L33/387 , H01L33/405
摘要： An embodiment has an emission layer, a first electrode having a reflective metal layer, an insulating layer, first and second conductivity type layers, and a second electrode. The insulating layer is provided on the first electrode and has an opening where a portion of the first electrode is provided. The first conductivity type layer is provided between the insulating layer and the emission layer and has bandgap energy larger than that of the emission layer. The second conductivity type layer is provided on the emission layer and has a current diffusion layer and a second contact layer. The second contact layer is not superimposed on the opening of the insulating layer, and a thickness of the current diffusion layer is larger than that of the first contact layer. The second electrode has a pad portion and a thin portion extends from the pad portion onto the second contact layer.
摘要翻译：实施例具有发射层，具有反射金属层的第一电极，绝缘层，第一和第二导电类型层以及第二电极。绝缘层设置在第一电极上，并且具有设置第一电极的一部分的开口。第一导电类型层设置在绝缘层和发射层之间，其带隙能量大于发射层的带隙能量。第二导电类型层设置在发射层上并具有电流扩散层和第二接触层。第二接触层不叠加在绝缘层的开口上，并且电流扩散层的厚度大于第一接触层的厚度。第二电极具有焊盘部分，并且薄部分从焊盘部分延伸到第二接触层上。

2. 发明授权

US08816378B2 Light emitting element and method for manufacturing same 有权
标题翻译：发光元件及其制造方法
公开(公告)号：US08816378B2
公开(公告)日：2014-08-26
申请号：US13929465
申请日：2013-06-27
申请人： Kabushiki Kaisha Toshiba
发明人： Shinji Nunotani , Yasuhiko Akaike , Kayo Inoue , Katsufumi Kondo , Tokuhiko Matsunaga
IPC分类号： H01L33/42 , H01L33/40
CPC分类号： H01L33/42 , H01L33/14 , H01L33/38 , H01L33/405
摘要： According to one embodiment, a light emitting element, includes: a semiconductor stacked body including a light emitting layer; a first upper electrode being connected directly to the semiconductor stacked body; at least one second upper electrode extending from the first upper electrode, the at least one second upper electrode being connected to the semiconductor stacked body via a first contact layer; a lower electrode; a transparent conductive layer; an intermediate film containing oxygen provided between the semiconductor stacked body and the transparent conductive layer; a light reflecting layer; and a current-blocking layer, at least one slit being provided selectively in the current-blocking layer as viewed from a direction perpendicular to a major surface of the light emitting layer.
摘要翻译：根据一个实施例，发光元件包括：包括发光层的半导体层叠体; 第一上电极直接连接到半导体层叠体; 从所述第一上部电极延伸的至少一个第二上部电极，所述至少一个第二上部电极经由第一接触层连接到所述半导体层叠体; 下电极透明导电层; 含有设置在所述半导体层叠体和所述透明导电层之间的氧的中间膜; 光反射层; 和电流阻挡层，当从垂直于发光层的主表面的方向观察时，至少一个狭缝选择性地设置在电流阻挡层中。

3. 发明授权

US11158514B2 Semiconductor device and method for manufacturing the same 有权
公开(公告)号：US11158514B2
公开(公告)日：2021-10-26
申请号：US16562555
申请日：2019-09-06
申请人： Kabushiki Kaisha Toshiba , Toshiba Electronic Devices & Storage Corporation
发明人： Toshiyuki Nishikawa , Kazuhiko Komatsu , Shinji Nunotani , Yoshiyuki Harada , Hideto Sugawara
IPC分类号： H01L21/285 , H01L33/40 , H01L29/47
摘要： A semiconductor device includes an n-type semiconductor layer; a first metal layer provided on the n-type semiconductor layer, the first metal layer including first atoms capable of being n-type impurities in the n-type semiconductor layer; a second metal layer provided on the first metal layer, the second metal layer including titanium atoms; a third metal layer provided on the second metal layer; and a second atom capable of being a p-type impurity in the n-type semiconductor layer. The second atom and a part of the titanium atoms are included in a vicinity of an interface between the first metal layer and the second metal layer.

4. 发明授权

US09887328B2 Semiconductor light emitting device and method for manufacturing same 有权
公开(公告)号：US09887328B2
公开(公告)日：2018-02-06
申请号：US14328048
申请日：2014-07-10
申请人： Kabushiki Kaisha Toshiba
发明人： Hideyuki Tomizawa , Akihiro Kojima , Miyoko Shimada , Yosuke Akimoto , Hideko Mukaida , Mitsuyoshi Endo , Hideto Furuyama , Yoshiaki Sugizaki , Kazuo Fujimura , Shinya Ito , Shinji Nunotani
IPC分类号： H01L29/06 , H01L33/54 , H01L33/00 , H01L33/46 , H01L33/50 , H01L33/60
CPC分类号： H01L33/54 , H01L33/0079 , H01L33/46 , H01L33/505 , H01L33/60 , H01L2933/0025 , H01L2933/005
摘要： According to one embodiment, a semiconductor light emitting device includes a semiconductor layer, a sealing member configured to cover a lower surface of the semiconductor layer and a side surface of the semiconductor layer to protrude to be higher than an upper surface of the semiconductor layer at a side of the semiconductor layer, a fluorescer layer provided above the semiconductor layer and the sealing member, and an insulating film provided between the sealing member and the semiconductor layer and between the sealing member and the fluorescer layer. A corner of a protruding portion of the sealing member is rounded.

5. 发明授权

US09142728B2 Semiconductor light emitting device and method for manufacturing the same 有权
标题翻译：半导体发光器件及其制造方法
公开(公告)号：US09142728B2
公开(公告)日：2015-09-22
申请号：US14455540
申请日：2014-08-08
申请人： KABUSHIKI KAISHA TOSHIBA
发明人： Akira Fujimoto , Ryota Kitagawa , Kumi Masunaga , Kenji Nakamura , Tsutomu Nakanishi , Koji Asakawa , Takanobu Kamakura , Shinji Nunotani
IPC分类号： H01L33/60 , H01L33/40 , H01L33/38 , H01L33/00
CPC分类号： H01L33/405 , H01L33/0079 , H01L33/38 , H01L33/40 , H01L2933/0016
摘要： According to one embodiment, a semiconductor light emitting device includes a structure including a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type and a light emitting layer provided between the first semiconductor layer and the second semiconductor layer. The device also includes an electrode layer provided on the second semiconductor layer side of the structure. The electrode layer includes a metal portion with a thickness of not less than 10 nanometers and not more than 100 nanometers. A plurality of openings pierces the metal portion, each of the openings having an equivalent circle diameter of not less than 10 nanometers and not more than 5 micrometers. The device includes an inorganic film providing on the metal portion and inner surfaces of the openings, the inorganic film having transmittivity with respect to light emitted from the light emitting layer.
摘要翻译：根据一个实施例，半导体发光器件包括包括第一导电类型的第一半导体层，第二导电类型的第二半导体层和设置在第一半导体层和第二半导体层之间的发光层的结构。该器件还包括设置在该结构的第二半导体层侧上的电极层。电极层包括厚度不小于10纳米且不大于100纳米的金属部分。多个开口刺穿金属部分，每个开口具有不小于10纳米且不大于5微米的等效圆直径。所述装置包括在所述金属部分和所述开口的内表面上提供的无机膜，所述无机膜相对于从所述发光层发射的光具有透射率。

6. 发明授权

US11342426B2 Semiconductor device and method of manufacturing same 有权
公开(公告)号：US11342426B2
公开(公告)日：2022-05-24
申请号：US16802670
申请日：2020-02-27
申请人： KABUSHIKI KAISHA TOSHIBA , TOSHIBA ELECTRONIC DEVICES & STORAGE CORPORATION
发明人： Shinji Nunotani , Shinji Onzuka
IPC分类号： H01L29/41 , H01L21/784 , H01L21/268 , H01L21/306 , H01L21/304 , H01L21/3065 , H01L29/417 , H01L29/868 , H01L29/872 , H01L21/265 , H01L29/45 , H01L29/78 , H01L29/739 , H01L21/683 , H01L21/283 , H01L29/861
摘要： A semiconductor device includes a semiconductor part, first and second electrodes. The semiconductor part is provided between the first and second electrodes. A method of manufacturing the device includes forming the first electrode covering a back surface of a wafer after the second electrode is formed on a front surface of the wafer; forming a first groove by selectively removing the first electrode; and dividing the wafer by forming a second groove at the front surface side. The wafer includes a region to be the semiconductor part; and the first and second grooves are provided along a periphery of the region. The first groove is in communication with the first groove. The second groove has a width in a direction along the front surface of the wafer, the width of the first groove being narrower than a width of the first groove in the same direction.

7. 发明授权

US09444017B2 Semiconductor light emitting device with a film having a roughened surface 有权
标题翻译：具有具有粗糙表面的膜的半导体发光器件
公开(公告)号：US09444017B2
公开(公告)日：2016-09-13
申请号：US14481189
申请日：2014-09-09
申请人： Kabushiki Kaisha Toshiba
发明人： Shinji Nunotani , Kazuo Fujimura , Shinya Ito
IPC分类号： H01L33/22 , H01L33/54 , H01L33/40 , H01L33/56 , H01L33/60 , H01L33/62 , H01L33/48 , H01L33/50
CPC分类号： H01L33/405 , H01L33/22 , H01L33/486 , H01L33/504 , H01L33/56 , H01L33/60 , H01L33/62 , H01L2933/0091
摘要： According to one embodiment, the second insulating film is provided between the first interconnect portion and the second interconnect portion, and at an outer periphery of a side face of the semiconductor layer. The optical layer is provided on the first side, and on the second insulating film at the outer periphery. The optical layer is transmissive with respect to light emitted from the light emitting layer. The film is provided between the second insulating film at the outer periphery and the optical layer. The film has a roughened surface on a side in contact with the optical layer.
摘要翻译：根据一个实施例，第二绝缘膜设置在第一互连部分和第二互连部分之间以及半导体层的侧面的外周。光学层设置在第一侧，在第二绝缘膜上设置在外周。光学层相对于从发光层发射的光是透射的。该膜设置在外周的第二绝缘膜与光学层之间。该膜在与光学层接触的一侧具有粗糙表面。

8. 发明申请

US20150280066A1 SEMICONDUCTOR LIGHT EMITTING DEVICE 有权
标题翻译：半导体发光器件
公开(公告)号：US20150280066A1
公开(公告)日：2015-10-01
申请号：US14481262
申请日：2014-09-09
申请人： KABUSHIKI KAISHA TOSHIBA
发明人： Kazuo Fujimura , Hironori Yamasaki , Tadashi Ono , Shinsaku Kubo , Shinji Nunotani
IPC分类号： H01L33/24 , H01L33/40 , H01L33/62 , H01L33/56 , H01L33/60
CPC分类号： H01L33/24 , H01L33/0079 , H01L33/22 , H01L33/405 , H01L33/46 , H01L33/505 , H01L33/56 , H01L33/60 , H01L33/62 , H01L2933/0066 , H01L2933/0091
摘要： According to one embodiment, the second insulating film is provided between the first interconnect portion and the second interconnect portion, and at an outer periphery of a side face of the semiconductor layer. The optical layer is provided on the first side and on the second insulating film at the outer periphery. The optical layer is transmissive with respect to light emitted from the light emitting layer. A plurality of protrusions and a plurality of recesses are provided at the first side. Peaks of the protrusions are positioned closer to the second side than an end on the second insulating film side of the optical layer at the outer periphery.
摘要翻译：根据一个实施例，第二绝缘膜设置在第一互连部分和第二互连部分之间以及半导体层的侧面的外周。光学层设置在外周的第一侧和第二绝缘膜上。光学层相对于从发光层发射的光是透射的。在第一侧设置有多个突起和多个凹部。突起的峰位于比外周侧的光学层的第二绝缘膜侧的端部更靠近第二侧的位置。

9. 发明授权

US08803179B2 Semiconductor light emitting device 有权
标题翻译：半导体发光器件
公开(公告)号：US08803179B2
公开(公告)日：2014-08-12
申请号：US13779114
申请日：2013-02-27
申请人： Kabushiki Kaisha Toshiba
发明人： Yasuhiko Akaike , Shinji Nunotani , Kazuyoshi Furukawa
IPC分类号： H01L33/00
CPC分类号： H01L33/60 , H01L33/0079 , H01L33/405 , H01L33/42
摘要： A semiconductor light emitting device is provided that includes a support substrate, a first metal layer formed on the support substrate, a transparent conductive layer formed on the first metal layer, a second metal layer embedded in the transparent conductive layer, and a semiconductor light emitting layer formed on the transparent conductive layer. A reflectance of the second metal layer to light emitted by the semiconductor light emitting layer is higher than a reflectance of the first metal layer to light emitted by the semiconductor light emitting layer.
摘要翻译：提供一种半导体发光器件，其包括支撑衬底，形成在支撑衬底上的第一金属层，形成在第一金属层上的透明导电层，嵌入在透明导电层中的第二金属层和发射层，形成在透明导电层上。第二金属层与半导体发光层发射的光的反射率高于第一金属层对半导体发光层发射的光的反射率。

10. 发明申请

US20130248912A1 SEMICONDUCTOR LIGHT EMITTING ELEMENT 审中-公开
标题翻译：半导体发光元件
公开(公告)号：US20130248912A1
公开(公告)日：2013-09-26
申请号：US13849822
申请日：2013-03-25
申请人： KABUSHIKI KAISHA TOSHIBA
发明人： Kenji NAKAMURA , Akira Fujimoto , Tsutomu Nakanishi , Ryota Kitagawa , Koji Asakawa , Takanobu Kamakura , Shinji Nunotani
IPC分类号： H01L33/58
CPC分类号： H01L33/58 , H01L33/44
摘要： According to one embodiment, a semiconductor light emitting element includes a stacked body and an optical layer. The stacked body has a major surface and includes a light emitting layer. The optical layer is in contact with the surface and includes a dielectric body, first particles, and second particles. The optical layer includes a first region including the dielectric body and the first particles and does not include the second particles and a second region including the dielectric body and the second particles. A sphere-equivalent diameter of the first particle is not less than 1 nanometer and not more than 100 nanometers. A sphere-equivalent diameter of the second particle is more than 300 nanometers and less than 1000 nanometers. An average refractive index of the first region is larger than a refractive index of the stacked body and smaller than a refractive index of the second particle.
摘要翻译：根据一个实施例，半导体发光元件包括层叠体和光学层。该层叠体具有主表面并且包括发光层。光学层与表面接触并且包括介电体，第一颗粒和第二颗粒。光学层包括包括电介质体和第一颗粒的第一区域，并且不包括第二颗粒和包括电介质体和第二颗粒的第二区域。第一颗粒的球体当量直径不小于1纳米且不大于100纳米。第二颗粒的球体当量直径大于300纳米且小于1000纳米。第一区域的平均折射率大于层叠体的折射率，小于第二粒子的折射率。

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