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1. 发明申请

US20120199071A1 PLASMA IMMERSION CHAMBER 审中-公开
标题翻译：等离子体浸泡室
公开(公告)号：US20120199071A1
公开(公告)日：2012-08-09
申请号：US13446732
申请日：2012-04-13
申请人： KENNETH S. COLLINS , Andrew N. Nguyen , Kartik Ramaswamy , Hiroji Hanawa , Douglas A. Buchberger, JR. , Daniel J. Hoffman , Amir Al-Bayati
发明人： KENNETH S. COLLINS , Andrew N. Nguyen , Kartik Ramaswamy , Hiroji Hanawa , Douglas A. Buchberger, JR. , Daniel J. Hoffman , Amir Al-Bayati
IPC分类号： C23C16/455 , C23C16/50
CPC分类号： H01J37/32458 , H01J37/32412 , H01J37/32477
摘要： Embodiments described herein relate to a plasma chamber and processing system utilizing robust components. In one embodiment, a chamber is provided. The chamber includes a body having an interior volume, a gas distribution assembly disposed in the interior volume opposing a substrate support, the gas distribution assembly having a coolant channel disposed thereon, and a first hollow conduit and a second hollow conduit coupled to the body and in fluid communication with the interior volume.
摘要翻译：本文所述的实施例涉及使用鲁棒部件的等离子体室和处理系统。在一个实施例中，提供了一个室。所述腔室包括具有内部体积的本体，设置在所述内部体积中与衬底支撑件相对的气体分配组件，所述气体分配组件具有设置在其上的冷却剂通道，以及联接到所述主体的第一中空导管和第二中空导管，与内部容积流体连通。

2. 发明申请

US20080173237A1 Plasma Immersion Chamber 审中-公开
标题翻译：等离子体浸入室
公开(公告)号：US20080173237A1
公开(公告)日：2008-07-24
申请号：US12016810
申请日：2008-01-18
申请人： Kenneth S. Collins , Andrew N. Nguyen , Kartik Ramaswamy , Hiroji Hanawa , Douglas A. Buchberger , Daniel J. Hoffman , Amir Al-Bayati
发明人： Kenneth S. Collins , Andrew N. Nguyen , Kartik Ramaswamy , Hiroji Hanawa , Douglas A. Buchberger , Daniel J. Hoffman , Amir Al-Bayati
IPC分类号： C23C16/453
CPC分类号： H01J37/32458 , H01J37/32412 , H01J37/32477
摘要： Embodiments described herein generally provide a toroidal plasma source, a plasma channeling device, a showerhead, and a substrate support assembly for use in a plasma chamber. The toroidal plasma source, plasma channeling device, showerhead, and substrate support assembly are adapted to improve the usable lifetime of the plasma chamber, as well as reduce assembly cost, increase the plasma chamber reliability, and improve device yield on the processed substrates.
摘要翻译：本文描述的实施例通常提供环形等离子体源，等离子体引导装置，喷头和用于等离子体室的基板支撑组件。环形等离子体源，等离子体引导装置，喷头和基板支撑组件适于改善等离子体室的使用寿命，并且降低组装成本，增加等离子体室的可靠性，并提高处理的基板上的装置产量。

3. 发明授权

US07767561B2 Plasma immersion ion implantation reactor having an ion shower grid 失效
标题翻译：具有离子喷淋格栅的等离子体浸没离子注入反应器
公开(公告)号：US07767561B2
公开(公告)日：2010-08-03
申请号：US10896113
申请日：2004-07-20
申请人： Hiroji Hanawa , Tsutomu Tanaka , Kenneth S. Collins , Amir Al-Bayati , Kartik Ramaswamy , Andrew Nguyen
发明人： Hiroji Hanawa , Tsutomu Tanaka , Kenneth S. Collins , Amir Al-Bayati , Kartik Ramaswamy , Andrew Nguyen
IPC分类号： H01L21/425
CPC分类号： H01J37/32412 , C23C14/48 , H01J37/32357 , H01L21/2236 , H01L21/31612
摘要： A plasma immersion ion implantation process for implanting a selected species at a desired ion implantation depth profile in a workpiece is carried out in a reactor chamber with an ion shower grid that divides the chamber into an upper ion generation region and a lower process region, the ion shower grid having plural elongate orifices oriented in a non-parallel direction relative to a surface plane of the ion shower grid.
摘要翻译：用于在工件中以期望的离子注入深度分布植入选定物种的等离子体浸没离子注入工艺在反应室中进行，其中离子喷淋网格将室分成上部离子产生区域和下部工艺区域，具有相对于离子喷淋栅格的表面平行方向定向的多个细长孔的离子喷淋格栅。

4. 发明授权

US07642180B2 Semiconductor on insulator vertical transistor fabrication and doping process 有权
标题翻译：半导体绝缘体垂直晶体管的制造和掺杂过程
公开(公告)号：US07642180B2
公开(公告)日：2010-01-05
申请号：US11901969
申请日：2007-09-18
申请人： Amir Al-Bayati , Kenneth S. Collins , Hiroji Hanawa , Kartik Ramaswamy , Biagio Gallo , Andrew Nguyen
发明人： Amir Al-Bayati , Kenneth S. Collins , Hiroji Hanawa , Kartik Ramaswamy , Biagio Gallo , Andrew Nguyen
IPC分类号： H01L21/44
CPC分类号： H01J37/321 , H01L29/66795 , H01L29/66803 , H01L29/7843 , H01L29/785 , H01L29/78618
摘要： A process for conformally doping through the vertical and horizontal surfaces of a 3-dimensional vertical transistor in a semiconductor-on-insulator structure employs an RF oscillating torroidal plasma current to perform either conformal ion implantation, or conformal deposition of a dopant-containing film which can then be heated to drive the dopants into the transistor. Some embodiments employ both conformal ion implantation and conformal deposition of dopant containing films, and in those embodiments in which the dopant containing film is a pure dopant, the ion implantation and film deposition can be performed simultaneously.
摘要翻译：通过绝缘体上半导体结构中的三维垂直晶体管的垂直和水平表面进行保形掺杂的工艺采用RF振荡环形等离子体电流来执行保形离子注入或含掺杂剂膜的共形沉积然后可以加热以将掺杂剂驱动到晶体管中。一些实施例采用包含掺杂剂的膜的共形离子注入和共形沉积，并且在其中含掺杂剂的膜是纯掺杂剂的那些实施例中，可以同时执行离子注入和膜沉积。

5. 发明授权

US07320734B2 Plasma immersion ion implantation system including a plasma source having low dissociation and low minimum plasma voltage 有权
标题翻译：等离子体浸没离子注入系统，其包括具有低解离和低最小等离子体电压的等离子体源
公开(公告)号：US07320734B2
公开(公告)日：2008-01-22
申请号：US10646527
申请日：2003-08-22
申请人： Kenneth S. Collins , Hiroji Hanawa , Kartik Ramaswamy , Andrew Nguyen , Amir Al-Bayati , Biagio Gallo , Gonzalo Antonio Monroy
发明人： Kenneth S. Collins , Hiroji Hanawa , Kartik Ramaswamy , Andrew Nguyen , Amir Al-Bayati , Biagio Gallo , Gonzalo Antonio Monroy
IPC分类号： C23C16/00 , C23F1/00
CPC分类号： H01J37/32082 , H01J37/321
摘要： A system for processing a workpiece includes a plasma immersion ion implantation reactor with an enclosure having a side wall and a ceiling and defining a chamber, and a workpiece support pedestal within the chamber having a workpiece support surface facing the ceiling and defining a process region extending generally across the wafer support pedestal and confined laterally by the side wall and axially between the workpiece support pedestal and the ceiling. The enclosure has at least a first pair of openings at generally opposite sides of the process region, and a first hollow conduit outside the chamber having first and second ends connected to respective ones of the first pair of openings, so as to provide a first reentrant path extending through the conduit and across the process region. The reactor further includes a gas distribution apparatus on or near an interior surface of the reactor for introducing a process gas containing a first species to be ion implanted into a surface layer of the workpiece, and a first RF plasma source power applicator for generating a plasma in the chamber. The system further includes a second wafer processing apparatus and a wafer transfer apparatus for transferring the workpiece between the plasma immersion implantation rector and the second wafer processing apparatus.
摘要翻译：一种用于处理工件的系统包括具有外壳的等离子体浸入式离子注入反应器，所述外壳具有侧壁和天花板并且限定室，并且所述室内的工件支撑基座具有面向天花板的工件支撑表面，并且限定延伸通常横跨晶片支撑台座并且由侧壁横向限制并且轴向地在工件支撑台座和天花板之间。外壳在工艺区域的大致相对侧具有至少第一对开口，腔室外的第一中空导管具有连接到第一对开口中的相应开口的第一端和第二端，以便提供第一凹槽路径延伸穿过管道并跨越过程区域。反应器还包括在反应器的内表面上或附近的气体分配装置，用于将含有待离子注入的第一种类的工艺气体引入到工件的表面层中;以及第一RF等离子体源功率施加器，用于产生等离子体在房间里该系统还包括第二晶片处理装置和晶片传送装置，用于在等离子浸入植入装置和第二晶片处理装置之间传送工件。

6. 发明授权

US07312148B2 Copper barrier reflow process employing high speed optical annealing 失效
标题翻译：铜屏障回流工艺采用高速光学退火
公开(公告)号：US07312148B2
公开(公告)日：2007-12-25
申请号：US11199570
申请日：2005-08-08
申请人： Kartik Ramaswamy , Hiroji Hanawa , Biagio Gallo , Kenneth S Collins , Kai Ma , Vijay Parihar , Dean Jennings , Abhilash J. Mayur , Amir Al-Bayati , Andrew Nguyen
发明人： Kartik Ramaswamy , Hiroji Hanawa , Biagio Gallo , Kenneth S Collins , Kai Ma , Vijay Parihar , Dean Jennings , Abhilash J. Mayur , Amir Al-Bayati , Andrew Nguyen
IPC分类号： H01L21/44
CPC分类号： H01L21/76877 , H01L21/76843 , H01L21/76864 , H01L21/76873
摘要： A method of forming a barrier layer for a thin film structure on a semiconductor substrate includes forming high aspect ratio openings in a base layer having vertical side walls, depositing a dielectric barrier layer comprising a dielectric compound of a barrier metal on the surfaces of the high aspect ratio openings including the vertical side walls and depositing a metal barrier layer comprising the barrier metal on the first barrier layer. The method further includes reflowing the metal barrier layer by (a) directing light from an array of continuous wave lasers into a line of light extending at least partially across the thin film structure, and (b) translating the line of light relative to the thin film structure in a direction transverse to the line of light.
摘要翻译：在半导体衬底上形成用于薄膜结构的阻挡层的方法包括在具有垂直侧壁的基底层中形成高纵横比的开口，在高的表面上沉积包含阻挡金属的电介质化合物的介电阻挡层纵横比开口，包括垂直侧壁，并且在第一阻挡层上沉积包含阻挡金属的金属阻挡层。该方法还包括通过（a）将来自连续波激光阵列的光引导到至少部分穿过薄膜结构延伸的光线中来回流金属阻挡层，以及（b）相对于薄的平移光线薄膜结构在横向于光线的方向上。

7. 发明授权

US07292428B2 Electrostatic chuck with smart lift-pin mechanism for a plasma reactor 有权
标题翻译：用于等离子体反应器的具有智能举升机构的静电卡盘
公开(公告)号：US07292428B2
公开(公告)日：2007-11-06
申请号：US11115951
申请日：2005-04-26
申请人： Hiroji Hanawa , Andrew Nguyen , Kenneth S. Collins , Kartik Ramaswamy , Biagio Gallo , Amir Al-Bayati
发明人： Hiroji Hanawa , Andrew Nguyen , Kenneth S. Collins , Kartik Ramaswamy , Biagio Gallo , Amir Al-Bayati
IPC分类号： H02N13/00
CPC分类号： H01L21/68742 , H01L21/6831
摘要： A lift pin assembly for use in a reactor for processing a workpiece includes plural lift pins extending generally parallel with a lift direction, each of the plural lift pins having a top end for supporting a workpiece and a bottom end. A lift table faces the bottom ends of the pins and is translatable in a direction generally parallel with the lift direction. A small force detector senses a force exerted by the lift pins that is sufficiently large to indicate a chucked wafer and sufficiently small to avoid dechucking a wafer. A large force detector senses a force exerted by the lift pins in a range sufficient to de-chuck the wafer.
摘要翻译：用于处理工件的反应器中的提升销组件包括大体平行于提升方向延伸的多个提升销，多个提升销中的每一个具有用于支撑工件的顶端和底端。升降台面向销的底端，并可在与升降方向大致平行的方向上平移。小的力检测器感测由提升销施加的足够大的力以指示夹紧的晶片并且足够小以避免使晶片脱扣。大的力检测器感测由提升销施加的力在足以脱离晶片的范围内。

8. 发明授权

US07109098B1 Semiconductor junction formation process including low temperature plasma deposition of an optical absorption layer and high speed optical annealing 失效
标题翻译：半导体结形成工艺包括光吸收层的低温等离子体沉积和高速光学退火
公开(公告)号：US07109098B1
公开(公告)日：2006-09-19
申请号：US11131904
申请日：2005-05-17
申请人： Kartik Ramaswamy , Hiroji Hanawa , Biagio Gallo , Kenneth S. Collins , Kai Ma , Vijay Parihar , Dean Jennings , Abhilash J. Mayur , Amir Al-Bayati , Andrew Nguyen
发明人： Kartik Ramaswamy , Hiroji Hanawa , Biagio Gallo , Kenneth S. Collins , Kai Ma , Vijay Parihar , Dean Jennings , Abhilash J. Mayur , Amir Al-Bayati , Andrew Nguyen
IPC分类号： H01L21/26
CPC分类号： H01L21/268 , H01L21/02118 , H01L21/0212 , H01L21/02274 , H01L21/02321 , H01L21/26513 , H01L21/3127 , H01L21/314 , H01L21/3146
摘要： A method of forming semiconductor junctions in a semiconductor material of a workpiece includes ion implanting dopant impurities in selected regions of the semiconductor material, introducing an optical absorber material precursor gas into a chamber containing the workpiece, generating an RF oscillating toroidal plasma current in a reentrant path that includes a process zone overlying the workpiece by applying RF source power, so as to deposit a layer of an optical absorber material on the workpiece, and optically annealing the workpiece so as to activate dopant impurities in the semiconductor material.
摘要翻译：在工件的半导体材料中形成半导体结的方法包括在半导体材料的选定区域中的离子注入掺杂剂杂质，将光吸收材料前体气体引入到包含工件的腔室中，在折返中产生RF振荡环形等离子体电流路径，其包括通过施加RF源功率覆盖工件的工艺区域，以便在工件上沉积光吸收材料层，并对工件进行光学退火，以激活半导体材料中的掺杂剂杂质。

9. 发明授权

US07037813B2 Plasma immersion ion implantation process using a capacitively coupled plasma source having low dissociation and low minimum plasma voltage 失效
标题翻译：使用具有低解离和低最小等离子体电压的电容耦合等离子体源的等离子体浸没离子注入工艺
公开(公告)号：US07037813B2
公开(公告)日：2006-05-02
申请号：US10646612
申请日：2003-08-22
申请人： Kenneth S. Collins , Hiroji Hanawa , Kartik Ramaswamy , Andrew Nguyen , Amir Al-Bayati , Biagio Gallo , Gonzalo Antonio Monroy
发明人： Kenneth S. Collins , Hiroji Hanawa , Kartik Ramaswamy , Andrew Nguyen , Amir Al-Bayati , Biagio Gallo , Gonzalo Antonio Monroy
IPC分类号： H01L21/04 , H01L21/84
CPC分类号： H01J37/32357 , H01J37/32082 , H01J37/321 , H01J37/32412 , H01L21/2236
摘要： A method for implanting ions in a surface layer of a workpiece includes placing the workpiece on a workpiece support in a chamber with the surface layer being in facing relationship with a ceiling of the chamber, thereby defining a processing zone between the workpiece and the ceiling, and introducing into the chamber a process gas including the species to be implanted in the surface layer of the workpiece. The method includes generating from the process gas a plasma by capacitively coupling RF source power across the workpiece support and the ceiling or the sidewall from an RF source power generator. The method further includes applying an RF bias from an RF bias generator to the workpiece support.
摘要翻译：用于将离子注入工件的表面层的方法包括将工件放置在腔室中的工件支撑件上，其中表面层与腔室的天花板处于面对关系，从而在工件和天花板之间限定加工区域，并且将包括待植入物种的工艺气体引入到工件的表面层中。该方法包括通过从RF源功率发生器电容耦合RF源功率跨过工件支撑件和天花板或侧壁来从工艺气体产生等离子体。该方法还包括将来自RF偏置发生器的RF偏压施加到工件支撑件。

10. 发明授权

US08058156B2 Plasma immersion ion implantation reactor having multiple ion shower grids 有权
标题翻译：具有多个离子淋浴网格的等离子体浸没离子注入反应器
公开(公告)号：US08058156B2
公开(公告)日：2011-11-15
申请号：US10895784
申请日：2004-07-20
申请人： Hiroji Hanawa , Tsutomu Tanaka , Kenneth S. Collins , Amir Al-Bayati , Kartik Ramaswamy , Andrew Nguyen
发明人： Hiroji Hanawa , Tsutomu Tanaka , Kenneth S. Collins , Amir Al-Bayati , Kartik Ramaswamy , Andrew Nguyen
IPC分类号： H01L21/425
CPC分类号： H01J37/32357 , C23C14/046 , C23C14/48 , C23C16/045 , H01J37/32412
摘要： A plasma immersion ion implantation process for implanting a selected species at a desired ion implantation depth profile in a workpiece is carried out in a reactor chamber having a set of plural parallel ion shower grids that divide the chamber into an upper ion generation region and a lower process region, each of the ion shower grids having plural orifices in mutual registration from grid to grid, the plural orifices oriented in a non-parallel direction relative to a surface plane of the respective ion shower grid. The process includes placing a workpiece in the process region, the workpiece having a workpiece surface generally facing the surface plane of the closest one of the plural ion shower grids, and furnishing the selected species into the ion generation region. The process further includes evacuating the process region, and applying plasma source power to generate a plasma of the selected species in the ion generation region. The process also includes applying successive grid potentials to successive ones of the grids and applying a bias potential to the workpiece. The combination of the grid and bias potentials corresponds to the desired ion implantation depth profile in the workpiece.
摘要翻译：在具有一组多个并联离子淋浴网格的反应室中进行用于在工件中以期望的离子注入深度分布植入选定物种的等离子体浸没离子注入方法，该多个平行离子淋浴网将腔室分成上部离子产生区域和下部处理区域，每个离子淋浴栅格具有从栅格到栅格相互配准的多个孔，多个孔相对于各个离子喷淋栅格的表面平行于非平行方向。该工艺包括将工件放置在工艺区域中，工件具有大致面对多个离子淋浴栅格中最接近的一个的表面的工件表面，并将所选择的物质提供到离子产生区域中。该方法还包括抽空处理区域，以及施加等离子体源功率以在离子产生区域中产生所选物种的等离子体。该过程还包括将连续的栅格电势施加到连续的栅格并向工件施加偏置电位。栅格和偏置电位的组合对应于工件中期望的离子注入深度分布。

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