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1. 发明授权

US10649447B2 Methods and systems for creating or performing a dynamic sampling scheme for a process during which measurements are performed on wafers 有权
公开(公告)号：US10649447B2
公开(公告)日：2020-05-12
申请号：US15597098
申请日：2017-05-16
申请人： KLA-Tencor Corporation
发明人： Pavel Izikson , John Robinson , Mike Adel , Amir Widmann , Dongsub Choi , Anat Marchelli
IPC分类号： H01L21/66 , G06F19/00 , G05B21/02 , H01L21/67 , G03F7/20
摘要： Various methods and systems for creating or performing a dynamic sampling scheme for a process during which measurements are performed on wafers are provided. One method for creating a dynamic sampling scheme for a process during which measurements are performed on wafers includes performing the measurements on all of the wafers in at least one lot at all measurement spots on the wafers. The method also includes determining an optimal sampling scheme, an enhanced sampling scheme, a reduced sampling scheme, and thresholds for the dynamic sampling scheme for the process based on results of the measurements. The thresholds correspond to values of the measurements at which the optimal sampling scheme, the enhanced sampling scheme, and the reduced sampling scheme are to be used for the process.

2. 发明授权

US09329033B2 Method for estimating and correcting misregistration target inaccuracy 有权
标题翻译：估计和纠正不对准目标误差的方法
公开(公告)号：US09329033B2
公开(公告)日：2016-05-03
申请号：US13834915
申请日：2013-03-15
申请人： KLA-TENCOR CORPORATION
发明人： Eran Amit , Dana Klein , Guy Cohen , Amir Widmann , Nimrod Shuall , Amnon Manassen , Nuriel Amir
IPC分类号： G01N37/00 , G01B21/04 , G03F7/20 , G06F11/30
CPC分类号： G01B21/042 , G03F7/70625 , G03F7/70633
摘要： Aspects of the present disclosure describe systems and methods for calibrating a metrology tool by using proportionality factors. The proportionality factors may be obtained by measuring a substrate under different measurement conditions. Then calculating the measured metrology value and one or more quality merits. From this information, proportionality factors may be determined. Thereafter the proportionality factors may be used to quantify the inaccuracy in a metrology measurement. The proportionality factors may also be used to determine an optimize measurement recipe. It is emphasized that this abstract is provided to comply with the rules requiring an abstract that will allow a searcher or other reader to quickly ascertain the subject matter of the technical disclosure. It is submitted with the understanding that it will not be used to interpret or limit the scope or meaning of the claims.
摘要翻译：本公开的方面描述了通过使用比例因子来校准度量工具的系统和方法。可以通过在不同测量条件下测量衬底来获得比例因子。然后计算测量的度量值和一个或多个质量优点。根据该信息，可以确定比例因子。此后，可以使用比例因子来量化度量测量中的不精确度。比例因子也可用于确定优化测量配方。要强调的是，该摘要被提供以符合要求抽象的规则，允许搜索者或其他读者快速确定技术公开内容的主题。提交它的理解是，它不会用于解释或限制权利要求的范围或含义。

3. 发明申请

US20140037187A1 Inspecting a Wafer and/or Predicting One or More Characteristics of a Device Being Formed on a Wafer 有权
标题翻译：检查晶片和/或预测在晶圆上形成的器件的一个或多个特性
公开(公告)号：US20140037187A1
公开(公告)日：2014-02-06
申请号：US13783291
申请日：2013-03-02
申请人： KLA-Tencor Corporation
发明人： Gino Marcuccilli , Amir Widmann , Ellis Chang , John Robinson , Allen Park
IPC分类号： G06T7/00
CPC分类号： G06T7/0004 , G06T7/001 , G06T2207/10061 , G06T2207/30148
摘要： Methods for inspecting a wafer and/or predicting one or more characteristics of a device being formed on a wafer are provided. One method includes acquiring images for multiple die printed on a wafer, each of which is printed by performing a double patterning lithography process on the wafer and which include two or more die printed at nominal values of overlay for the double patterning lithography process and one or more die printed at modulated values of the overlay; comparing the images acquired for the multiple die printed at the nominal values to the images acquired for the multiple die printed at the modulated values; and detecting defects in the multiple die printed at the modulated values based on results of the comparing step.
摘要翻译：提供了检查晶片和/或预测在晶片上形成的器件的一个或多个特性的方法。一种方法包括获取用于多个印刷在晶片上的图像，每个图像通过在晶片上执行双重图案化平版印刷工艺而被印刷，并且包括两个或更多个以双重图案化平版印刷工艺的覆盖的标称值印刷的模具，以及一个或更多地以覆盖层的调制值打印; 将以标称值印刷的多个印模获得的图像与以调制值印刷的多个印模获得的图像进行比较; 并且基于比较步骤的结果检测以调制值印刷的多个印模中的缺陷。

4. 发明授权

US08948495B2 Inspecting a wafer and/or predicting one or more characteristics of a device being formed on a wafer 有权
标题翻译：检查晶片和/或预测在晶片上形成的器件的一个或多个特性
公开(公告)号：US08948495B2
公开(公告)日：2015-02-03
申请号：US13783291
申请日：2013-03-02
申请人： KLA-Tencor Corporation
发明人： Gino Marcuccilli , Amir Widmann , Ellis Chang , John Robinson , Allen Park
IPC分类号： G06K9/00 , G06T7/00
CPC分类号： G06T7/0004 , G06T7/001 , G06T2207/10061 , G06T2207/30148
摘要： Methods for inspecting a wafer and/or predicting one or more characteristics of a device being formed on a wafer are provided. One method includes acquiring images for multiple die printed on a wafer, each of which is printed by performing a double patterning lithography process on the wafer and which include two or more die printed at nominal values of overlay for the double patterning lithography process and one or more die printed at modulated values of the overlay; comparing the images acquired for the multiple die printed at the nominal values to the images acquired for the multiple die printed at the modulated values; and detecting defects in the multiple die printed at the modulated values based on results of the comparing step.
摘要翻译：提供了检查晶片和/或预测在晶片上形成的器件的一个或多个特性的方法。一种方法包括获取用于多个印刷在晶片上的图像，每个图像通过在晶片上执行双重图案化平版印刷工艺而被印刷，并且包括两个或更多个以双重图案化平版印刷工艺的覆盖的标称值印刷的模具，以及一个或更多地以覆盖层的调制值打印; 将以标称值印刷的多个印模获得的图像与以调制值印刷的多个印模获得的图像进行比较; 并且基于比较步骤的结果检测以调制值印刷的多个印模中的缺陷。

5. 发明申请

US20140199791A1 Method and System for Universal Target Based Inspection and Metrology 有权
标题翻译：通用目标检测和计量方法与系统
公开(公告)号：US20140199791A1
公开(公告)日：2014-07-17
申请号：US14083126
申请日：2013-11-18
申请人： KLA-Tencor Corporation
发明人： Allen Park , Ellis Chang , Michael Adel , Kris Bhaskar , Ady Levy , Amir Widmann , Mark Wagner , Songnian Rong
IPC分类号： H01L21/66 , G06F17/50
CPC分类号： H01L22/12 , G06F17/5081
摘要： Universal target based inspection drive metrology includes designing a plurality of universal metrology targets measurable with an inspection tool and measurable with a metrology tool, identifying a plurality of inspectable features within at least one die of a wafer using design data, disposing the plurality of universal targets within the at least one die of the wafer, each universal target being disposed at least proximate to one of the identified inspectable features, inspecting a region containing one or more of the universal targets with an inspection tool, identifying one or more anomalistic universal targets in the inspected region with an inspection tool and, responsive to the identification of one or more anomalistic universal targets in the inspected region, performing one or more metrology processes on the one or more anomalistic universal metrology targets with the metrology tool.
摘要翻译：通用的基于目标的检测驱动度量包括设计多个通过检测工具测量的通用度量目标并且可以用计量工具测量，使用设计数据识别晶片的至少一个管芯内的多个检查特征，将多个通用目标在晶片的至少一个模具内，每个通用目标被设置为至少接近所识别的可检查特征之一，用检查工具检查包含一个或多个通用目标的区域，以识别一个或多个异常通用目标检查区域具有检查工具，并且响应于在被检查区域中识别一个或多个异常通用目标，对所述一个或多个异常通用度量目标与计量工具执行一个或多个计量过程。

6. 发明申请

US20140060148A1 METHOD FOR ESTIMATING AND CORRECTING MISREGISTRATION TARGET INACCURACY 有权
标题翻译：估计和校正目标不确定度的方法
公开(公告)号：US20140060148A1
公开(公告)日：2014-03-06
申请号：US13834915
申请日：2013-03-15
申请人： KLA-TENCOR CORPORATION
发明人： Eran Amit , Dana Klein , Guy Cohen , Amir Widmann , Nimrod Shuall , Amnon Manassen , Nuriel Amir
IPC分类号： G01B21/04
CPC分类号： G01B21/042 , G03F7/70625 , G03F7/70633
摘要： Aspects of the present disclosure describe systems and methods for calibrating a metrology tool by using proportionality factors. The proportionality factors may be obtained by measuring a substrate under different measurement conditions. Then calculating the measured metrology value and one or more quality merits. From this information, proportionality factors may be determined. Thereafter the proportionality factors may be used to quantify the inaccuracy in a metrology measurement. The proportionality factors may also be used to determine an optimize measurement recipe. It is emphasized that this abstract is provided to comply with the rules requiring an abstract that will allow a searcher or other reader to quickly ascertain the subject matter of the technical disclosure. It is submitted with the understanding that it will not be used to interpret or limit the scope or meaning of the claims.
摘要翻译：本公开的方面描述了通过使用比例因子来校准度量工具的系统和方法。可以通过在不同测量条件下测量衬底来获得比例因子。然后计算测量的度量值和一个或多个质量优点。根据该信息，可以确定比例因子。此后，可以使用比例因子来量化度量测量中的不精确度。比例因子也可用于确定优化测量配方。要强调的是，该摘要被提供以符合要求抽象的规则，允许搜索者或其他读者快速确定技术公开的主题。提交它的理解是，它不会用于解释或限制权利要求的范围或含义。

7. 发明申请

US20170255188A1 Methods and Systems for Creating or Performing a Dynamic Sampling Scheme for a Process During Which Measurements Are Performed on Wafers 审中-公开
公开(公告)号：US20170255188A1
公开(公告)日：2017-09-07
申请号：US15597098
申请日：2017-05-16
申请人： KLA-Tencor Corporation
发明人： Pavel Izikson , John Robinson , Mike Adel , Amir Widmann , Dongsub Choi , Anat Marchelli
IPC分类号： G05B21/02 , G03F7/20
CPC分类号： G05B21/02 , G03F7/70508 , G03F7/70625 , G03F7/70633 , H01L21/67288
摘要： Various methods and systems for creating or performing a dynamic sampling scheme for a process during which measurements are performed on wafers are provided. One method for creating a dynamic sampling scheme for a process during which measurements are performed on wafers includes performing the measurements on all of the wafers in at least one lot at all measurement spots on the wafers. The method also includes determining an optimal sampling scheme, an enhanced sampling scheme, a reduced sampling scheme, and thresholds for the dynamic sampling scheme for the process based on results of the measurements. The thresholds correspond to values of the measurements at which the optimal sampling scheme, the enhanced sampling scheme, and the reduced sampling scheme are to be used for the process.

8. 发明授权

US09576861B2 Method and system for universal target based inspection and metrology 有权
标题翻译：通用目标检测和计量方法与系统
公开(公告)号：US09576861B2
公开(公告)日：2017-02-21
申请号：US14083126
申请日：2013-11-18
申请人： KLA-Tencor Corporation
发明人： Allen Park , Ellis Chang , Michael Adel , Kris Bhaskar , Ady Levy , Amir Widmann , Mark Wagner , Songnian Rong
IPC分类号： G06F17/50 , H01L21/66
CPC分类号： H01L22/12 , G06F17/5081
摘要： Universal target based inspection drive metrology includes designing a plurality of universal metrology targets measurable with an inspection tool and measurable with a metrology tool, identifying a plurality of inspectable features within at least one die of a wafer using design data, disposing the plurality of universal targets within the at least one die of the wafer, each universal target being disposed at least proximate to one of the identified inspectable features, inspecting a region containing one or more of the universal targets with an inspection tool, identifying one or more anomalistic universal targets in the inspected region with an inspection tool and, responsive to the identification of one or more anomalistic universal targets in the inspected region, performing one or more metrology processes on the one or more anomalistic universal metrology targets with the metrology tool.
摘要翻译：通用的基于目标的检测驱动度量包括设计多个通过检测工具测量的通用度量目标并且可以用计量工具测量，使用设计数据识别晶片的至少一个管芯内的多个检查特征，将多个通用目标在晶片的至少一个模具内，每个通用目标被设置为至少接近所识别的可检查特征之一，用检查工具检查包含一个或多个通用目标的区域，以识别一个或多个异常通用目标检查区域具有检查工具，并且响应于在被检查区域中识别一个或多个异常通用目标，对所述一个或多个异常通用度量目标与计量工具执行一个或多个计量过程。

9. 发明授权

US09170209B1 Inspection guided overlay metrology 有权
标题翻译：检验指导覆盖计量
公开(公告)号：US09170209B1
公开(公告)日：2015-10-27
申请号：US14053193
申请日：2013-10-14
申请人： KLA-Tencor Corporation
发明人： Ellis Chang , Amir Widmann , Allen Park
IPC分类号： G01N21/00 , G01R31/26 , G01N21/95 , H01L21/66 , G01N21/956 , G03F7/20 , G01N21/88
CPC分类号： G01N21/9501 , G01N21/95607 , G01N2021/8822 , G03F7/70633 , G03F7/7065 , H01L22/12 , H01L2924/0002 , H01L2924/00
摘要： Inspection guided overlay metrology may include performing a pattern search in order to identify a predetermined pattern on a semiconductor wafer, generating a care area for all instances of the predetermined pattern on the semiconductor wafer, identifying defects within generated care areas by performing an inspection scan of each of the generated care areas, wherein the inspection scan includes a low-threshold or a high sensitivity inspection scan, identifying overlay sites of the predetermined pattern of the semiconductor wafer having a measured overlay error larger than a selected overlay specification utilizing a defect inspection technique, comparing location data of the identified defects of a generated care area to location data of the identified overlay sites within the generated care area in order to identify one or more locations wherein the defects are proximate to the identified overlay sites, and generating a metrology sampling plan based on the identified locations.
摘要翻译：检查引导覆盖度量可以包括执行图案搜索以便识别半导体晶片上的预定图案，为半导体晶片上的预定图案的所有实例生成护理区域，通过执行检查扫描来检查所产生的护理区域内的缺陷每个生成的护理区域，其中检查扫描包括低阈值或高灵敏度检查扫描，识别具有大于使用缺陷检查技术的所选覆盖规格的测量的覆盖误差的半导体晶片的预定图案的覆盖位置将生成的护理区域的所识别的缺陷的位置数据与生成的护理区域内的所识别的覆盖位置的位置数据进行比较，以便识别其中缺陷接近所识别的覆盖位置的一个或多个位置，以及生成计量取样基于确定的位置进行计划。

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