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1. 发明授权

US09876141B2 LED with patterned surface features based on emission field patterns 有权
公开(公告)号：US09876141B2
公开(公告)日：2018-01-23
申请号：US14900143
申请日：2014-06-12
申请人： KONINKLIJKE PHILIPS N.V.
发明人： Toni Lopez
IPC分类号： H01L33/22 , H01L33/24 , H01L33/20 , H01L33/00 , H01L33/46
CPC分类号： H01L33/24 , H01L33/0062 , H01L33/20 , H01L33/22 , H01L33/46
摘要： The escape surface of a light emitting element includes features (310) that include sloped surfaces (312, 314) that have angles of inclination that are based on the direction of peak light output from the light emitting element. If the light output exhibits a number of lobes at different directions, the sloped surfaces (312, 314) may have a corresponding number of different angles of inclination (as in FIGS. 3b and 3c). To minimize the re-injection of light into adjacent features, adjacent features may be positioned to avoid having surfaces that directly face each other. The features may be shaped or positioned to provide a pseudo-random distribution of inclined surfaces across the escape surface, and multiple roughening processes may be used.

2. 发明申请

US20170040517A1 Side Interconnect for Light Emitting Device 有权
标题翻译：侧面互连用于发光装置
公开(公告)号：US20170040517A1
公开(公告)日：2017-02-09
申请号：US15296935
申请日：2016-10-18
申请人： Koninklijke Philips N.V.
发明人： Toni Lopez , Mark Melvin Butterworth , Theodoros Mihopoulos
IPC分类号： H01L33/62 , H01L33/46 , H01L33/40 , H01L33/38
CPC分类号： H01L33/62 , H01L33/382 , H01L33/385 , H01L33/405 , H01L33/46 , H01L33/502 , H01L2933/0016 , H01L2933/0066
摘要： Embodiments of the invention include a semiconductor structure including a light emitting layer disposed between an n-type region and a p-type region. A metal n-contact is connected to the n-type region. A metal p-contact is in direct contact with the p-type region. An interconnect is electrically connected to one of the n-contact and the p-contact. The interconnect is disposed adjacent to the semiconductor structure.
摘要翻译：本发明的实施例包括包括设置在n型区域和p型区域之间的发光层的半导体结构。金属n型触点连接到n型区域。金属p型接触件与p型区域直接接触。互连电连接到n触点和p触点之一。互连配置成与半导体结构相邻。

3. 发明授权

US10461230B2 Light emitting diode component 有权
公开(公告)号：US10461230B2
公开(公告)日：2019-10-29
申请号：US15972480
申请日：2018-05-07
申请人： Koninklijke Philips N.V.
发明人： Toni Lopez
IPC分类号： H01L33/58 , H01L33/44 , H01L33/50
摘要： The present invention relates to a light emitting diode component, comprising a light emitting semiconductor structure having a top surface, and a micro-optical multilayer structure arranged to guide light out from said light emitting semiconductor structure, said micro-optical multilayer structure comprising a plurality of layers, wherein an i+1:th layer is arranged on top an i:th layer in a sequence as seen from said semiconductor structure, wherein a refractive index, ni, of the i:th layer is greater than a refractive index, ni+l, of the i+1:th layer, and wherein a thickness of the i+1:th layer is greater than a thickness of the i:th layer. The present invention also relates to a light emitting diode comprising such a light emitting diode component.

4. 发明授权

US10355168B2 Light-emitting device with patterned substrate 有权
公开(公告)号：US10355168B2
公开(公告)日：2019-07-16
申请号：US15314400
申请日：2015-05-18
申请人： KONINKLIJKE PHILIPS N.V.
发明人： Toni Lopez
IPC分类号： H01L33/00 , H01L33/20 , H01L33/10 , H01L33/24 , H01L33/32 , H01L33/44
摘要： A lighting device according to embodiments of the invention includes a substrate with a plurality of holes that extend from a surface of the substrate. A non-III-nitride material is disposed within the plurality of holes. The surface of the substrate is free of the non-III-nitride material. A semiconductor structure is grown on the surface of the substrate. The semiconductor structure includes a light emitting layer disposed between an n-type region and a p-type region.

5. 发明授权

US10026881B2 Light emitting device with reflector and a top contact 有权
公开(公告)号：US10026881B2
公开(公告)日：2018-07-17
申请号：US15566366
申请日：2016-04-05
申请人： KONINKLIJKE PHILIPS N.V.
发明人： Toni Lopez
IPC分类号： H01L33/00 , H01L33/60 , H01L33/36 , H01L33/32
摘要： Embodiments of the invention include a semiconductor structure including a light emitting layer disposed between an n-type region and a p-type region. A metal busbar is disposed on the semiconductor structure. A first portion of the metal busbar is in direct contact with the semiconductor structure. A reflector is disposed between a second portion of the metal busbar and the semiconductor structure. A current blocking structure prevents current from being injected in the light emitting layer in a region below the first portion.

6. 发明授权

US09966511B2 Light emitting diode component 有权
公开(公告)号：US09966511B2
公开(公告)日：2018-05-08
申请号：US14786947
申请日：2014-04-17
申请人： KONINKLIJKE PHILIPS N.V.
发明人： Toni Lopez
IPC分类号： H01L33/00 , H01L33/58 , H01L33/44 , H01L33/50
CPC分类号： H01L33/58 , H01L33/44 , H01L33/507
摘要： The present invention relates to a light emitting diode component (101), comprising a light emitting semiconductor structure (104) having a top surface, and a micro-optical multilayer structure (102) arranged to guide light out from said light emitting semiconductor structure (104), said micro-optical multilayer structure (102) comprising a plurality of layers, wherein an i+1:th layer is arranged on top an i:th layer in a sequence as seen from said semiconductor structure (104), wherein a refractive index, ni, of the i:th layer is greater than a refractive index, ni+1, of the i+1:th layer, and wherein a thickness of the i+1:th layer is greater than a thickness of the i:th layer. The present invention also relates to a light emitting diode comprising such a light emitting diode component.

7. 发明授权

US09768368B2 Side interconnect for light emitting device 有权
公开(公告)号：US09768368B2
公开(公告)日：2017-09-19
申请号：US15296935
申请日：2016-10-18
申请人： Koninklijke Philips N.V.
发明人： Toni Lopez , Mark Melvin Butterworth , Theodoros Mihopoulos
IPC分类号： H01L33/62 , H01L33/38 , H01L33/40 , H01L33/46 , H01L33/50
CPC分类号： H01L33/62 , H01L33/382 , H01L33/385 , H01L33/405 , H01L33/46 , H01L33/502 , H01L2933/0016 , H01L2933/0066
摘要： Embodiments of the invention include a semiconductor structure including a light emitting layer disposed between an n-type region and a p-type region. A metal n-contact is connected to the n-type region. A metal p-contact is in direct contact with the p-type region. An interconnect is electrically connected to one of the n-contact and the p-contact. The interconnect is disposed adjacent to the semiconductor structure.

8. 发明申请

US20160336485A1 LIGHT EMITTING DIODE WITH STRUCTURED SUBSTRATE 有权
标题翻译：具有结构基板的发光二极管
公开(公告)号：US20160336485A1
公开(公告)日：2016-11-17
申请号：US15112291
申请日：2015-01-16
申请人： KONINKLIJKE PHILIPS N.V.
发明人： Toni Lopez
IPC分类号： H01L33/20 , H01L33/46 , H01L33/44
CPC分类号： H01L33/20 , H01L33/22 , H01L33/44 , H01L33/46
摘要： Embodiments of the invention include a semiconductor light emitting device. The device includes a substrate having first surface and a second surface opposite the first surface. The device further includes a semiconductor structure disposed on the first surface of the substrate. A cavity is disposed within the substrate. The cavity extends from the second surface of the substrate. The cavity has a sloped side wall.
摘要翻译：本发明的实施例包括半导体发光器件。该装置包括具有第一表面和与第一表面相对的第二表面的基底。该器件还包括设置在衬底的第一表面上的半导体结构。空腔设置在基板内。空腔从基板的第二表面延伸。空腔有一个倾斜的侧壁。

9. 发明申请

US20140368128A1 ACTIVE CAPACITOR CIRCUIT 有权
标题翻译：主动电容器电路
公开(公告)号：US20140368128A1
公开(公告)日：2014-12-18
申请号：US14344203
申请日：2012-09-28
申请人： KONINKLIJKE PHILIPS N.V.
发明人： Reinhold Elferich , Toni Lopez
IPC分类号： H05B33/08
CPC分类号： H05B33/0815 , H02J7/345 , H02M1/15 , H05B33/0809 , H05B37/02
摘要： The present invention relates to an active capacitor circuit (40) for use in a driver device for driving a load (22), in particular an LED unit comprising one or more LEDs (23). Further, the present invention relates to a driver device comprising such an active capacitor circuit. The proposed active capacitor circuit comprises coupling terminals (41, 42) for providing a drive voltage (vD) and/or drive current (iD) for driving a load (22) to be coupled between said coupling terminals (41, 42), an output power stage (50) coupled between said coupling terminals (41, 42) for converting said periodic current (iA) into said drive current (iD), a low frequency capacitor (46) coupled between a capacitor output terminal (48) of said output power stage (50) and a coupling terminal (42), and a control unit (60) for controlling said output power stage (50) by use of a control signal (Sd) obtained from a feedback of the drive voltage (vD), a capacitor voltage (vC) across said low frequency capacitor (46) and/or a capacitor current (iC) through said low frequency capacitor (46).
摘要翻译：本发明涉及用于驱动负载（22）的驱动器装置中的有源电容器电路（40），特别是包括一个或多个LED（23）的LED单元。此外，本发明涉及包括这种有源电容电路的驱动器装置。所提出的有源电容电路包括用于提供用于驱动耦合在所述耦合端子（41,42）之间的负载（22）的驱动电压（vD）和/或驱动电流（iD）的耦合端子（41,42），输出功率级（50），其耦合在所述耦合端子（41,42）之间，用于将所述周期性电流（iA）转换成所述驱动电流（iD）;低频电容器（46），耦合在所述电容器输出端输出功率级（50）和耦合端子（42）;以及控制单元（60），用于通过使用从驱动电压（vD）的反馈获得的控制信号（Sd）来控制所述输出功率级（50），所述低频电容器（46）之间的电容电压（vC）和/或通过所述低频电容器（46）的电容器电流（iC）。

10. 发明授权

US10090437B2 LED having etched light emitting surface for increased light extraction 有权
公开(公告)号：US10090437B2
公开(公告)日：2018-10-02
申请号：US14762568
申请日：2014-01-31
申请人： KONINKLIJKE PHILIPS N.V.
发明人： Cornelis Eustatius Timmering , Marcus Antonius Verschuuren , Toni Lopez , Abraham Rudolf Balkenende
IPC分类号： H01L33/00 , H01L33/22
摘要： The present invention relates to a light emitting device (100) comprising: a substrate (102); a light emitting diode structure (106) arranged on the substrate (102), the diode structure (106) comprising a first semiconducting layer (108), an active region (110) and a second semiconducting layer (112), wherein a light output surface of the diode structure comprises a plurality of protruding surface structures (104) each having a peak height, a sidewall slope (122) and orientation in relation to the substrate, the plurality of protruding structures (104) comprising a first set and a second set of protruding surface structures, the first set and second set of protruding surface structures differing by at least one of the peak height, sidewall slope and orientation in relation to the substrate. The invention also relates to a method for manufacturing a light emitting device where the protruding surface structures are formed by imprint lithography to form a three-dimensional pattern and subsequent etching.

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