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    • 8. 发明授权
    • Phosphor separated from LED by transparent spacer
    • 荧光粉由LED透明隔离物分离
    • US09391243B2
    • 2016-07-12
    • US14412026
    • 2013-06-25
    • KONINKLIJKE PHILIPS N.V.
    • Mark Melvin ButterworthKenneth Vampola
    • H01L33/50H01L33/52H01L33/58
    • H01L33/50H01L33/505H01L33/507H01L33/52H01L33/58H01L2224/16225
    • To reduce absorption by an LED die (12) of light emitted by a phosphor layer (48), the absorbing semiconductor layers of the LED die (12) are separated from the phosphor layer by a relatively thick glass plate (44) affixed to the LED die or by the LED die transparent growth substrate. Therefore, phosphor light emitted at a sufficient angle towards the LED die will pass through the transparent spacer (44) and exit the sidewalls of the spacer, preventing the light from being absorbed by the LED die. The LED die may be GaN based. The spacer is at least 100 microns thick. A 16% gain in light extraction is achievable using the technique compared to the light emission where phosphor is directly deposited on the LED semiconductor layers.
    • 为了减少由荧光体层(48)发射的光的LED管芯(12)的吸收,LED管芯(12)的吸收半导体层通过相对较厚的玻璃板(44)与荧光体层分离, LED芯片或由LED芯片透明生长衬底。 因此,以足够的角度朝向LED管芯发射的荧光体光将穿过透明间隔物(44)并离开间隔物的侧壁,防止光被LED管芯吸收。 LED芯片可以是基于GaN的。 间隔物至少为100微米厚。 使用这种技术可以实现光提取16%的增益,与荧光体直接沉积在LED半导体层上的发光相比。