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1. 发明授权

US09691619B2 Laser annealing device with multiple lasers 有权
公开(公告)号：US09691619B2
公开(公告)日：2017-06-27
申请号：US14654089
申请日：2013-03-07
申请人： Kazunori Kanada , Tadaharu Minato , Yusuke Kawase
发明人： Kazunori Kanada , Tadaharu Minato , Yusuke Kawase
IPC分类号： H01L21/268 , B23K26/08 , H01L21/324 , B23K26/06 , H01L29/66 , B23K26/082 , B23K26/0622 , B23K26/073
CPC分类号： H01L21/268 , B23K26/0604 , B23K26/0622 , B23K26/0732 , B23K26/082 , B23K26/0853 , H01L21/324 , H01L29/66333
摘要： A laser annealing device of the present invention includes a stage on which a heating object is placed, a first laser element which emits first continuous laser light, a first optical system which leads the first continuous laser light to the heating object to form a first application region on the heating object, a second laser element which emits second continuous laser light having a wavelength shorter than that of the first continuous laser light, a second optical system which leads the second continuous laser light to the heating object to form a second application region on the heating object, and a system controller which executes scanning with the first application region and the second application region so that each portion of the heating object is scanned with at least part of the first application region before being scanned with the second application region.

2. 发明申请

US20050032305A1 Method of fabricating semiconductor device 失效
公开(公告)号：US20050032305A1
公开(公告)日：2005-02-10
申请号：US10900151
申请日：2004-07-28
申请人： Takeshi Kishida , Yusuke Kawase
发明人： Takeshi Kishida , Yusuke Kawase
IPC分类号： H01L21/8242 , H01L21/02 , H01L27/108
CPC分类号： H01L28/91 , H01L27/10817 , H01L27/10852 , H01L28/84
摘要： On a silicon oxide film including the interior of an opening a semispherical RGP film is deposited. At a temperature lower than that allowing a crystal of silicon to be grown a BPTEOS film is deposited to fill the opening. Then a portion other than the semispherical RGP film introduced in the opening is chemically mechanically polished and thus removed. This contributes to reduced crystal growth of silicon at the semispherical RGP film and hence reduced scattering and/or removal of the RGP film for example when a CMP step is performed. Subsequently the semispherical RGP film is annealed to grow a crystal of silicon to form a generally spherical RGP film. Thus a storage node can have an increased surface area and a capacitor can have increased capacity.

3. 发明申请

US20050283846A1 Method for evaluating therapeutic agent for dermatitis and/or alopecia, therapeutic agent for dermatitis and/or alopecia, and transgenic mouse 审中-公开
标题翻译：用于评价皮炎和/或脱发治疗剂的方法，用于皮炎和/或脱发的治疗剂和转基因小鼠
公开(公告)号：US20050283846A1
公开(公告)日：2005-12-22
申请号：US11210692
申请日：2005-08-25
申请人： Tomoaki Hoshino , Yusuke Kawase , Keiko Nomiyama , Koichi Yokota , Kohichiro Yoshino
发明人： Tomoaki Hoshino , Yusuke Kawase , Keiko Nomiyama , Koichi Yokota , Kohichiro Yoshino
IPC分类号： A61K31/00 , A61K49/00 , A01K67/027 , A61K39/395
CPC分类号： A61K31/00 , A61K49/0006
摘要： A method for evaluating an effect of an agent to be tested on alopecia, using a transgenic mouse to which an interleukin-18 gene under control of a keratinocyte promoter is introduced, or a method for evaluating an effect of an agent to be tested on skin, using the transgenic mouse, wherein the following (A) and/or (B) are used as an evaluation indicator. (A) spontaneous dermatitis (B) dermal inflammation at a time of a first administration of a phlogogenous material Using the transgenic mouse, the effect of an agent to be tested on dermatitis for which autoimmune dermatitis is a typical example and/or alopecia can be examined, and an agent for preventing/treating dermatitis or alopecia can be provided.
摘要翻译：使用引入角质形成细胞启动子控制下的白细胞介素-18基因的转基因小鼠，评价待测试剂对脱发的效果的方法，或评估试验对皮肤的效果的方法使用转基因小鼠，其中使用以下（A）和/或（B）作为评价指标。（A）自发性皮炎（B）第一次施用嗜呼吸性物质时的真皮炎症使用转基因小鼠，对自身免疫性皮炎是典型的例子和/或脱发的皮炎所测试的试剂的作用可以是可以提供预防/治疗皮炎或脱发的药剂。

4. 发明申请

US20050074434A1 Remedies for metabolic bone diseases 审中-公开
标题翻译：补救代谢性骨病
公开(公告)号：US20050074434A1
公开(公告)日：2005-04-07
申请号：US10468011
申请日：2002-02-25
申请人： Tomoaki Hoshino , Koichi Yokota , Yusuke Kawase
发明人： Tomoaki Hoshino , Koichi Yokota , Yusuke Kawase
IPC分类号： A61K38/17 , A61P3/14 , A61P19/10 , A61P43/00 , C07K16/28 , G01N33/50 , A61K39/395
CPC分类号： C07K16/2866 , A61K38/1709 , A61K38/1793 , A61K49/0008 , A61K2039/505 , G01N33/5088 , G01N2333/54
摘要： Novel remedies for metabolic bone diseases containing an IL-18 inhibitor as the active ingredient. These remedies exert a therapeutic effect by inhibiting the effect of overexpressed IL-18 which closely relates to the onset of osteoporosis. They are also useful as remedies for other metabolic bone diseases.
摘要翻译：含有IL-18抑制剂作为活性成分的新陈代谢骨疾病治疗方法。这些治疗方法通过抑制与骨质疏松症发生密切相关的过表达IL-18的作用发挥治疗作用。它们也可用作其他代谢性骨疾病的补救措施。

5. 发明授权

US06716697B2 Method of manufacturing semiconductor device having capacitor 失效
公开(公告)号：US06716697B2
公开(公告)日：2004-04-06
申请号：US10331656
申请日：2002-12-31
申请人： Yusuke Kawase
发明人： Yusuke Kawase
IPC分类号： H01L218242
CPC分类号： H01L27/10855 , H01L21/76802 , H01L21/76829 , H01L27/10894 , H01L28/91 , Y10S438/97
摘要： Provided is a semiconductor device manufacturing method in which the numbers of photolithography and anisotropic dry etching processes are reduced to simplify the manufacturing steps; and it is avoided that the presence of an etching stopper film complicates the manufacturing steps in a region where no capacitor is formed, and also causes malfunction in a contact plug. Specifically, an anisotropic dry etching using a resist mask (RM2) is performed to form an opening (OP3) extending through at least an interlayer insulating film (5). Even after an etching stopper film (4) is exposed to the bottom part of the opening (OP3), the anisotropic dry etching is continued, using the etching stopper film (4) as etching mask, in order to form a contact hole (CH1) extending through an interlayer insulating film (3) to source/drain regions (11, 13). Therefore, the opening (OP3) and contact hole (CH1) are obtainable at a time in the same etching step.

6. 发明申请

US20130317218A1 NOVEL BICYCLIC THIAZOLE COMPOUNDS 审中-公开
公开(公告)号：US20130317218A1
公开(公告)日：2013-11-28
申请号：US13479396
申请日：2012-05-24
申请人： Masaaki Sawa , Hideki Moriyama , Tesshi Yamada , Miki Shitashige , Yusuke Kawase , Yuko Uno
发明人： Masaaki Sawa , Hideki Moriyama , Tesshi Yamada , Miki Shitashige , Yusuke Kawase , Yuko Uno
IPC分类号： C07D417/12 , C07D417/14 , C07D495/04 , C07D277/56
CPC分类号： C07D277/56 , C07D417/12 , C07D417/14
摘要： The present invention relates to novel bicyclic thiazole compounds that inhibit Traf2- and Nck-interacting kinase (TNIK), and as such are useful as TNIK inhibitors administered to cancer patients, especially to solid cancer patients such as colorectal cancer, pancreatic cancer, non-small cell lung cancer, prostate cancer or breast cancer. The bicyclic thiazole compounds are showed by a next formula (I). (wherein R1, R2, R3 and Q are as defined in the specification), or a pharmaceutically acceptable salt thereof.

7. 发明授权

US06977199B2 Method of fabricating semiconductor device 失效
标题翻译：制造半导体器件的方法
公开(公告)号：US06977199B2
公开(公告)日：2005-12-20
申请号：US10900151
申请日：2004-07-28
申请人： Takeshi Kishida , Yusuke Kawase
发明人： Takeshi Kishida , Yusuke Kawase
IPC分类号： H01L21/8242 , H01L21/02 , H01L27/108
CPC分类号： H01L28/91 , H01L27/10817 , H01L27/10852 , H01L28/84
摘要： On a silicon oxide film including the interior of an opening a semispherical RGP film is deposited. At a temperature lower than that allowing a crystal of silicon to be grown a BPTEOS film is deposited to fill the opening. Then a portion other than the semispherical RGP film introduced in the opening is chemically mechanically polished and thus removed. This contributes to reduced crystal growth of silicon at the semispherical RGP film and hence reduced scattering and/or removal of the RGP film for example when a CMP step is performed. Subsequently the semispherical RGP film is annealed to grow a crystal of silicon to form a generally spherical RGP film. Thus a storage node can have an increased surface area and a capacitor can have increased capacity.
摘要翻译：在包含开口内部的氧化硅膜上沉积半球形RGP膜。在低于允许生长硅晶体的温度下，沉积BPTEOS膜以填充开口。然后将引入到开口中的半球形RGP膜以外的部分化学机械抛光并因此被除去。这有助于在半球形RGP膜处降低硅的晶体生长，并因此例如当执行CMP步骤时减少RGP膜的散射和/或去除。随后将半球形RGP膜退火以生长硅晶体，以形成通常为球形的RGP膜。因此，存储节点可以具有增加的表面积，并且电容器可以具有增加的容量。

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