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1. 发明授权

US07209842B2 Activation signal output circuit and determination circuit 失效
标题翻译：激活信号输出电路和确定电路
公开(公告)号：US07209842B2
公开(公告)日：2007-04-24
申请号：US10536338
申请日：2003-11-26
申请人： Kazuo Mizuno , Ryu Kimura , Yoshiyuki Kago , Yukiomi Tanaka , Kazuhiko Endo , Hisanori Uda , Hiroaki Hayashi
发明人： Kazuo Mizuno , Ryu Kimura , Yoshiyuki Kago , Yukiomi Tanaka , Kazuhiko Endo , Hisanori Uda , Hiroaki Hayashi
IPC分类号： G06F19/00
CPC分类号： H03D1/10 , H03D1/18
摘要： A start signal output circuit having an RF/DC conversion circuit to which radio frequency power (RF) of specified frequency is inputted and from which a direct current potential (DC) is outputted, comprises a detection/amplification circuit 210 which includes a voltage doubler wave-detector circuit 10 configured including a sensing diode Q1 (Tr34) for sensing the RF power, a differential amplifier including differential pair transistors Tr31 and Tr32, and a current mirror circuit. A base current of one Tr31 of the differential pair transistors is brought into substantial agreement with a DC component of a current flowing through the sensing diode Q1 (Tr34). A total of currents flowing through the differential pair transistors Tr31 and Tr32 is regulated to a substantially constant value by the current mirror circuit. Thus, the start signal output circuit which is small in size, high in sensitivity and low in power consumption can be realized.
摘要翻译：具有输入了特定频率的射频功率（RF）并从其输出直流电位（DC）的RF / DC转换电路的启动信号输出电路包括检测/放大电路210，其包括倍压器波检测器电路10被配置为包括用于感测RF功率的感测二极管Q 1（Tr 34），包括差分对晶体管Tr 31和Tr 32的差分放大器和电流镜电路。差分对晶体管的一个Tr 31的基极电流与流经感测二极管Q 1（Tr 34）的电流的直流分量基本一致。流过差分对晶体管Tr 31和Tr 32的总电流通过电流镜电路被调节到基本恒定的值。因此，可以实现尺寸小，灵敏度高，功耗低的启动信号输出电路。

2. 发明申请

US20060071654A1 Activation signal output circuit and determining circuit 失效
标题翻译：激活信号输出电路和确定电路
公开(公告)号：US20060071654A1
公开(公告)日：2006-04-06
申请号：US10536338
申请日：2003-11-26
申请人： Kazuo Mizuno , Ryu Kimura , Yoshiyuki Kago , Yukiomi Tanaka , Kazuhiko Endo , Hisanori Uda , Hiroaki Hayashi
发明人： Kazuo Mizuno , Ryu Kimura , Yoshiyuki Kago , Yukiomi Tanaka , Kazuhiko Endo , Hisanori Uda , Hiroaki Hayashi
IPC分类号： G01R25/00
CPC分类号： H03D1/10 , H03D1/18
摘要： A start signal output circuit having an RF/DC conversion circuit to which radio frequency power (RF) of specified frequency is inputted and from which a direct current potential (DC) is outputted, comprises a detection/amplification circuit 210 which includes a voltage doubler wave-detector circuit 10 configured including a sensing diode Q1 (Tr34) for sensing the RF power, a differential amplifier including differential pair transistors Tr31 and Tr32, and a current mirror circuit. A base current of one Tr31 of the differential pair transistors is brought into substantial agreement with a DC component of a current flowing through the sensing diode Q1 (Tr34). A total of currents flowing through the differential pair transistors Tr31 and Tr32 is regulated to a substantially constant value by the current mirror circuit. Thus, the start signal output circuit which is small in size, high in sensitivity and low in power consumption can be realized.
摘要翻译：具有输入了特定频率的射频功率（RF）并从其输出直流电位（DC）的RF / DC转换电路的启动信号输出电路包括检测/放大电路210，其包括倍压器波检测器电路10被配置为包括用于感测RF功率的感测二极管Q 1（Tr 34），包括差分对晶体管Tr 31和Tr 32的差分放大器和电流镜电路。差分对晶体管的一个Tr 31的基极电流与流经感测二极管Q 1（Tr 34）的电流的直流分量基本一致。流过差分对晶体管Tr 31和Tr 32的总电流通过电流镜电路被调节到基本恒定的值。因此，可以实现尺寸小，灵敏度高，功耗低的启动信号输出电路。

3. 发明授权

US07536153B2 Activation signal output circuit having multiple amplifier circuits 有权
标题翻译：激活信号输出电路具有多个放大电路
公开(公告)号：US07536153B2
公开(公告)日：2009-05-19
申请号：US10566614
申请日：2004-12-15
申请人： Hisanori Uda , Hiroaki Hayashi , Yoshiyuki Kago , Yukiomi Tanaka , Kazuhiko Endo
发明人： Hisanori Uda , Hiroaki Hayashi , Yoshiyuki Kago , Yukiomi Tanaka , Kazuhiko Endo
IPC分类号： H04B1/16
CPC分类号： H03F3/45085 , H03F3/189 , H03F3/3022 , H03F2200/54
摘要： With a capacitor C inserted in an interstage portion of multiple stages of amplifier circuits, a high pass filter is generated by the capacitor C and an input impedance |Z| of an amplifier circuit in the next stage. Accordingly, frequency components lower than a cutoff frequency fc are cut off, and therefore are not transferred to the subsequent stage. However, radio frequency components higher than or equal to a fundamental wave component determined by an envelope of a radio frequency signal intermittently transmitted can be transferred. Consequently, transfer of DC offset potentials can be cut off, and noise, such as flicker noise, having great power in a DC or near-DC zone can be effectively cut off. Thereby, the S/N ratio, detection sensitivity, and detection accuracy can be improved.
摘要翻译：通过将电容器C插入到多级放大器电路的级间部分中，由电容器C产生高通滤波器，并且输入阻抗| Z | 的放大器电路在下一阶段。因此，低于截止频率fc的频率分量被切断，因此不会转移到后续阶段。然而，可以传送高于或等于由间歇发送的射频信号的包络确定的基波分量的射频分量。因此，DC偏移电位的传递可以被切断，并且可以有效地切断在DC或近DC区域具有大功率的噪声，例如闪烁噪声。从而可以提高S / N比，检测灵敏度和检测精度。

4. 发明申请

US20060217099A1 Activation signal output circuit 有权
标题翻译：激活信号输出电路
公开(公告)号：US20060217099A1
公开(公告)日：2006-09-28
申请号：US10566614
申请日：2004-12-15
申请人： Hisanori Uda , Hiroaki Hayashi , Yoshiyuki Kago , Yukiomi Tanaka , Kazuhiko Endo
发明人： Hisanori Uda , Hiroaki Hayashi , Yoshiyuki Kago , Yukiomi Tanaka , Kazuhiko Endo
IPC分类号： H04B1/10
CPC分类号： H03F3/45085 , H03F3/189 , H03F3/3022 , H03F2200/54
摘要： With a capacitor C inserted in an interstage portion of multiple stages of amplifier circuits, a high pass filter is generated by the capacitor C and an input impedance |Z| of an amplifier circuit in the next stage. Accordingly, frequency components lower than a cutoff frequency fc are cut off, and therefore are not transferred to the subsequent stage. However, radio frequency components higher than or equal to a fundamental wave component determined by an envelope of a radio frequency signal intermittently transmitted can be transferred. Consequently, transfer of DC offset potentials can be cut off, and noise, such as flicker noise, having great power in a DC or near-DC zone can be effectively cut off. Thereby, the S/N ratio, detection sensitivity, and detection accuracy can be improved.
摘要翻译：通过将电容器C插入到多级放大器电路的级间部分中，由电容器C产生高通滤波器，并且输入阻抗| Z | 的放大器电路在下一阶段。因此，低于截止频率fc的频率分量被切断，因此不会转移到后续阶段。然而，可以传送高于或等于由间歇发送的射频信号的包络确定的基波分量的射频分量。因此，DC偏移电位的传递可以被切断，并且可以有效地切断在DC或近DC区域具有大功率的噪声，例如闪烁噪声。从而可以提高S / N比，检测灵敏度和检测精度。

5. 发明授权

US08399879B2 Nano-wire field effect transistor, method for manufacturing the transistor, and integrated circuit including the transistor 有权
标题翻译：纳米线场效应晶体管，晶体管的制造方法以及包括晶体管的集成电路
公开(公告)号：US08399879B2
公开(公告)日：2013-03-19
申请号：US12993880
申请日：2009-06-05
申请人： Yongxun Liu , Takashi Matsukawa , Kazuhiko Endo , Shinichi Ouchi , Kunihiro Sakamoto , Meishoku Masahara
发明人： Yongxun Liu , Takashi Matsukawa , Kazuhiko Endo , Shinichi Ouchi , Kunihiro Sakamoto , Meishoku Masahara
IPC分类号： H01L29/06 , H01L31/072 , H01L31/019 , H01L31/0328 , H01L31/0336
CPC分类号： H01L29/0665 , B82Y10/00 , H01L29/045 , H01L29/0673 , H01L29/42392 , H01L29/78696
摘要： Provided is a method for fabricating a nano-wire field effect transistor including steps of: preparing an SOI substrate having a (100) surface orientation, and nano-wire field effect transistor where two triangular columnar members configuring the nano-wires and being made of a silicon crystal layer are arranged one above the other on an SOI substrate having a (100) surface such a way that the ridge lines of the triangular columnar members face via an insulator; processing the silicon crystal configuring the SOI substrate into a standing plate-shaped member having a rectangular cross-section; and as a nanowire, processing the silicon crystal by orientation dependent wet etching into a shape where two triangular columnar members are arranged one above the other in such a way that the ridge lines of the triangular columnar members configuring the nano-wires face through the ridge lines thereof, and an integrated circuit including the nano-wire field effect transistor.
摘要翻译：提供一种制造纳米线场效应晶体管的方法，包括以下步骤：制备具有（100）表面取向的SOI衬底和纳米线场效应晶体管，其中构成纳米线的两个三角柱形构件由在具有（100）表面的SOI衬底上，使三角柱状构件的棱线经由绝缘体面对，从而将硅晶体层彼此重叠地布置; 将构成SOI衬底的硅晶体加工成具有矩形横截面的立式板状构件; 并且作为纳米线，通过取向相关的湿法蚀刻将硅晶体加工成两个三角柱形部件一个在另一个上方布置的形状，使得构成纳米线的三角柱形部件的脊线面向通过脊线，以及包括纳米线场效应晶体管的集成电路。

6. 发明授权

US08040717B2 SRAM cell and SRAM device 有权
标题翻译： SRAM单元和SRAM器件
公开(公告)号：US08040717B2
公开(公告)日：2011-10-18
申请号：US12521408
申请日：2007-12-20
申请人： Shinichi Ouchi , Yongxun Liu , Meishoku Masahara , Takashi Matsukawa , Kazuhiko Endo
发明人： Shinichi Ouchi , Yongxun Liu , Meishoku Masahara , Takashi Matsukawa , Kazuhiko Endo
IPC分类号： G11C11/00
CPC分类号： H01L27/1104 , H01L21/845 , H01L27/11 , H01L27/1211 , H01L29/785 , H01L29/7856
摘要： A static random access memory (SRAM) cell includes a first to a fourth semiconductor thin plate that are provided on a substrate and are arranged parallel to each other. On respective semiconductor thin plates, there is formed a first four-terminal double-gate field effect transistor (FET) with a first conductivity type, a second and a third four-terminal double-gate FET which are connected in series with each other and have a second conductivity type, a fourth and a fifth four-terminal double-gate FET which are connected in series with each other and have the second conductivity type, and a sixth four-terminal double-gate FET with the first conductivity type. The third and the fourth four-terminal double-gate FETs form select transistors, and the first, second, fifth and sixth four-terminal double-gate FETs form a complementary metal-oxide-semiconductor (CMOS) inverter.
摘要翻译：静态随机存取存储器（SRAM）单元包括设置在基板上并且彼此平行布置的第一至第四半导体薄板。在相应的半导体薄板上形成具有第一导电类型的第一四端双栅场效应晶体管（FET），彼此串联连接的第二和第三四端双栅FET 具有彼此串联并具有第二导电类型的第二导电类型，第四和第五四端子双栅极FET以及具有第一导电类型的第六四端子双栅极FET。第三和第四四端子双栅极FET形成选择晶体管，第一，第二，第五和第六四端子双栅极FET形成互补的金属氧化物半导体（CMOS）反相器。

7. 发明授权

US06495950B1 Deflection yoke for color cathode-ray tube 失效
标题翻译：彩色阴极射线管偏转磁轭
公开(公告)号：US06495950B1
公开(公告)日：2002-12-17
申请号：US09533363
申请日：2000-03-22
申请人： Katsumi Ito , Akihiko Mori , Kazuhiko Endo
发明人： Katsumi Ito , Akihiko Mori , Kazuhiko Endo
IPC分类号： H01J2970
CPC分类号： H01J29/703
摘要： A deflection yoke capable of easily adjusting a member having a pair of magnetic pieces by moving the member to a standard state in the case of correcting misconvergence. According to the deflection yoke of the invention, a member having a pair of magnetic pieces disposed in the horizontal deflection direction is attached to an electron gun side of the deflection yoke. The shape of a part of each of ends of the member coincides with a part of the outer shape of the electron gun side of the deflection yoke. The adjusting person can easily set the member into the standard state by adjusting the parts with his/her fingers. By moving the member in the horizontal direction from such a state, misconvergence can be corrected.
摘要翻译：一种偏转线圈，其能够通过在校正失会聚的情况下将构件移动到标准状态来容易地调节具有一对磁片的构件。根据本发明的偏转线圈，具有沿水平偏转方向设置的一对磁性片的构件安装在偏转线圈的电子枪侧。构件的每个端部的一部分的形状与偏转线圈的电子枪侧的外部形状的一部分重合。调整人员可以通过用手指调节部件，轻松地将会员设置为标准状态。通过从这种状态沿水平方向移动构件，可以纠正失会聚。

8. 发明授权

US6104092A Semiconductor device having amorphous carbon fluoride film of low dielectric constant as interlayer insulation material 失效
标题翻译：具有低介电常数的无定形氟化碳膜的半导体器件作为层间绝缘材料
公开(公告)号：US6104092A
公开(公告)日：2000-08-15
申请号：US52937
申请日：1998-04-01
申请人： Yoshihisa Matsubara , Kazuhiko Endo
发明人： Yoshihisa Matsubara , Kazuhiko Endo
IPC分类号： H01L21/3205 , H01L23/532 , H01L23/48
CPC分类号： H01L21/32051 , H01L23/53223 , H01L23/5329 , H01L2924/0002
摘要： A metal film with high melting point containing such nitrogen as titanium nitride is disposed on the interface between an amorphous carbon fluoride film and a metal. A structure is obtained from the function of a nitrogen-containing metal film with high melting point which prevents fluorine dispersion, to prevent such problems as the reaction of a metal and fluorine at heating process and the following falling or swelling of the metal film can be solved. In addition, the heating process possible to introduce in the manufacturing steps allow to complete the LSI making process of a practical multilayer wiring structure on the basis of a low dielectric constant of amorphous carbon.
摘要翻译：在无定形氟化碳膜和金属之间的界面上设置有含有氮的氮化物的高熔点金属膜。从具有防止氟分散的高熔点含氮金属膜的功能获得结构，防止金属和氟在加热过程中的反应以及随后的金属膜的下降或溶胀的问题可以是解决了。此外，可以在制造步骤中引入的加热工艺允许基于无定形碳的低介电常数来完成实际的多层布线结构的LSI制造工艺。

9. 发明授权

US09340118B2 Charging control apparatus for an electricity storage apparatus in a vehicle 有权
标题翻译：车辆用蓄电装置用充电控制装置
公开(公告)号：US09340118B2
公开(公告)日：2016-05-17
申请号：US13455407
申请日：2012-04-25
申请人： Kazuhiko Endo
发明人： Kazuhiko Endo
IPC分类号： B60L11/18 , B60R25/20
CPC分类号： B60L11/1846 , B60L11/1816 , B60L2250/10 , B60L2270/36 , B60R25/2018 , Y02T10/7005 , Y02T10/7072 , Y02T90/121 , Y02T90/128 , Y02T90/14 , Y02T90/163 , Y02T90/169 , Y04S30/14
摘要： When detecting an abnormality, an in-vehicle wireless instrument in a plug-in vehicle sends an abnormality occurrence notification to a mobile terminal via an information center. The mobile terminal performs a notification to notify a user of the abnormality having occurred in the plug-in vehicle. When the user performs a charging forbiddance manipulation based on the notification, the mobile terminal sends a charging forbidding command to a power management ECU in the vehicle via the information center and the in-vehicle wireless instrument. When receiving the charging forbidding command, the power management ECU stops charging a battery using an external power source, and sends a setting completion notification to the mobile terminal via the in-vehicle wireless instrument and the information center. When receiving the setting completion notification, the mobile terminal notifies the user that the charging is stopped.
摘要翻译：当检测到异常时，插入式车辆中的车载无线装置经由信息中心向移动终端发送异常发生通知。移动终端执行通知，向通知用户发生在插入式车辆中发生的异常。当用户基于该通知进行充电禁止操作时，移动终端经由信息中心和车载无线仪器向车辆中的电源管理ECU发送充电禁止命令。当接收到禁止充电命令时，电源管理ECU使用外部电源对电池进行停止充电，并经由车载无线装置和信息中心向移动终端发送设定完成通知。当接收到设置完成通知时，移动终端通知用户充电停止。

10. 发明授权

US08597732B2 Thin film depositing method 有权
标题翻译：薄膜沉积法
公开(公告)号：US08597732B2
公开(公告)日：2013-12-03
申请号：US12531260
申请日：2008-03-14
申请人： Naoki Shirakawa , Yoshiyuki Yoshida , Kazuhiko Endo , Tetsuya Mino
发明人： Naoki Shirakawa , Yoshiyuki Yoshida , Kazuhiko Endo , Tetsuya Mino
IPC分类号： C23C16/06
CPC分类号： C01B23/0036 , B01D53/32 , B01D2257/104 , C01B21/0433 , C01B2210/0031 , C01B2210/0034 , C01B2210/0045 , C01B2210/0062 , C23C14/165 , C23C14/564 , C23C14/5853 , C23C16/18 , C23C16/4402 , C23C16/56
摘要： A method comprising: supplying a gas whose water concentration has been controlled to become smaller than 1 PPB, whose oxygen partial pressure has been controlled to become lower than 10−21 atm by a water/oxygen molecule discharging apparatus into the interior of a reaction chamber and carrying out a dehydration/deoxidation process in the interior of said reaction chamber so as to control water vapor partial pressure to become lower than 10−10 atm; depositing a metal film on a substrate by supplying a carrier gas or a plasma excitation gas whose water concentration has been controlled to become smaller than 1 PPB, whose oxygen partial pressure has been controlled to become lower than 10−21 atm into the interior of said reaction chamber; forming an insulating film on the wafer by oxidizing the metal film in a low-oxygen atmosphere whose oxygen partial pressure has been controlled to become lower than 10−20 atm.
摘要翻译：一种方法，包括：通过水/氧分子排放装置将其浓度被控制成小于1PPB的气体，其氧分压被控制为低于10-21atm，进入反应室内并在所述反应室的内部进行脱水/脱氧处理，以控制水蒸气分压变得低于10-10atm; 通过将其水浓度被控制为小于1PPB的载气或等离子体激发气体，将其氧分压降低到10-21atm以下，将氧化金属膜沉积在基板上，进入所述反应室; 在氧分压低于10-20atm的低氧气氛中氧化金属膜，在晶片上形成绝缘膜。

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