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    • 1. 发明授权
    • Method and apparatus for analyzing genotype data
    • 分析基因型数据的方法和装置
    • US08554487B2
    • 2013-10-08
    • US11326164
    • 2006-01-04
    • Ki-eun KimKyung-Hee ParkJung-joo HwangJae-Heup KimYeon-Su LeeKyusang Lee
    • Ki-eun KimKyung-Hee ParkJung-joo HwangJae-Heup KimYeon-Su LeeKyusang Lee
    • G01N33/50
    • G06F19/18G06F19/26
    • Provided are a method and apparatus for analyzing genotype data plotted in a two-dimensional space. The method includes: connecting points representing the genotype data to a predetermined point to form straight lines and obtaining angles between adjacent straight lines; extracting the two largest angles from the obtained angles; and analyzing the plotted genotype data using three groups of the genotype data separated by the two extracted largest angles. According to the present invention, when the experimental results of classifying genotype are to be analyzed, the two largest angles from the angles obtained by connecting straight lines between points representing each of the genotype data and a predetermined point plotted in a two-dimensional space are detected, and three data regions separated by the detected two largest angles are used to analyze the genotype data. Thus, a large amount of the experimental data for classifying the genotype can be analyzed rapidly and conveniently.
    • 提供了用于分析绘制在二维空间中的基因型数据的方法和装置。 该方法包括:将表示基因型数据的点连接到预定点以形成直线并获得相邻直线之间的角度; 从所获得的角度提取两个最大角度; 并使用由两个提取的最大角度分离的三组基因型数据分析绘制的基因型数据。 根据本发明,当分析基因型分类的实验结果时,通过连接表示各基因型数据的点和在二维空间中绘制的预定点之间的直线连接获得的角度的两个最大角度为 检测到的三个数据区域被检测到的两个最大角度分开,以分析基因型数据。 因此,可以快速方便地分析大量用于分类基因型的实验数据。
    • 7. 发明申请
    • SACRIFICIAL ETCH PROTECTION LAYERS FOR REUSE OF WAFERS AFTER EPITAXIAL LIFT OFF
    • 外部提升关闭后的重复使用的防腐蚀层
    • US20130043214A1
    • 2013-02-21
    • US13536267
    • 2012-06-28
    • Stephen R. ForrestJeramy ZimmermanKyusang Lee
    • Stephen R. ForrestJeramy ZimmermanKyusang Lee
    • B32B15/04B44C1/22
    • H01L31/1896Y02E10/50Y10T428/31678
    • There is disclosed a growth structure comprising a growth substrate, a sacrificial layer, a buffer layer, at least three substrate protective layers, at least one epilayer, at least one contact, and a metal or alloy-coated host substrate. In one embodiment, the device further comprises at least three device structure protecting layers. The sacrificial layer may be positioned between the growth substrate and the at least one epilayer, wherein the at least three substrate protective layers are positioned between the growth substrate and the sacrificial layer, and the at least three device structure protecting layers are positioned between the sacrificial layer and the epilayer. There is also disclosed a method of preserving the integrity of a growth substrate by releasing the cell structure by etching the sacrificial layer and the protective layers.
    • 公开了一种生长结构,其包括生长衬底,牺牲层,缓冲层,至少三个衬底保护层,至少一个外延层,至少一个接触层,以及涂覆有金属或合金的主体衬底。 在一个实施例中,该装置还包括至少三个装置结构保护层。 牺牲层可以位于生长衬底和至少一个外延层之间,其中至少三个衬底保护层位于生长衬底和牺牲层之间,并且至少三个器件结构保护层位于牺牲层之间 层和外延层。 还公开了通过蚀刻牺牲层和保护层来释放细胞结构来保持生长基质的完整性的方法。