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1. 发明授权

US6046475A Structure and method for manufacturing devices having inverse T-shaped well regions 失效
标题翻译：用于制造具有反T形阱区的器件的结构和方法
公开(公告)号：US6046475A
公开(公告)日：2000-04-04
申请号：US864988
申请日：1997-05-29
申请人： Kow-Ming Chang , Ji-yi Yang , Ming-Ray Mao
发明人： Kow-Ming Chang , Ji-yi Yang , Ming-Ray Mao
IPC分类号： H01L29/10 , H01L31/119
CPC分类号： H01L29/1079
摘要： A structure for manufacturing devices having inverse T-shaped well regions, which are formed on a substrate, comprises a first doped region and second doped region which have higher impurity concentrations and two third doped regions which have a lower impurity concentration. The first doped region formed on the substrate by a high-energy ion-implantation process is kept at a predetermined distance from the surface of the substrate. The second doped region extends from the surface of the substrate toward the downside to connect to the first doped region, such that two third doped regions are formed. The second doped region is formed by an ion-implantation process through an opening of a mask. Furthermore, a gate is formed above the second doped region, and source and drain regions are formed on the substrate. Therefore, a device having an inverse T-shaped well region is completely fabricated.
摘要翻译：用于制造具有反T形阱区的器件的结构，其形成在衬底上，包括具有较高杂质浓度的第一掺杂区和第二掺杂区和具有较低杂质浓度的两个第三掺杂区。通过高能离子注入工艺在衬底上形成的第一掺杂区域保持在离衬底表面预定距离处。第二掺杂区域从衬底的表面向下延伸以连接到第一掺杂区域，使得形成两个第二掺杂区域。第二掺杂区域通过离子注入工艺通过掩模的开口形成。此外，在第二掺杂区域上方形成栅极，并且在衬底上形成源极和漏极区域。因此，具有逆T形阱区域的器件被完全制造。

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