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1. 发明授权

US08445889B2 Method of patterning of nanostructures 失效
标题翻译：纳米结构图案化方法
公开(公告)号：US08445889B2
公开(公告)日：2013-05-21
申请号：US12918842
申请日：2009-02-23
申请人： Kumar Bhupendra , Yuanyuan Zhang , Zongbin Wang , Lain-Jong Li , Subodh Gautam Mhaisalkar
发明人： Kumar Bhupendra , Yuanyuan Zhang , Zongbin Wang , Lain-Jong Li , Subodh Gautam Mhaisalkar
IPC分类号： H01L29/06
CPC分类号： G03F7/0002 , B41M3/006 , B81B2207/07 , B81C1/00031 , B81C2201/0184 , B81C2201/0191 , B82Y10/00 , B82Y40/00 , C09D11/52 , H01L51/0004 , H01L51/0005 , H01L51/0048 , H01L51/0541
摘要： A method of patterning nanostructures comprising printing an ink comprising the nanostructures onto a solvent-extracting first surface such that a pattern of nanostructures is formed on the first surface.
摘要翻译：一种图案化纳米结构的方法，包括将包含纳米结构的油墨印刷到溶剂萃取的第一表面上，使得在第一表面上形成纳米结构图案。

2. 发明申请

US20110001118A1 PATTERNING OF NANOSTRUCTURES 失效
标题翻译：绘制纳米结构
公开(公告)号：US20110001118A1
公开(公告)日：2011-01-06
申请号：US12918842
申请日：2009-02-23
申请人： Kumar Bhupendra , Yuanyuan Zhang , Zongbin Wang , Lain-Jong Li , Subodh Gautam Mhaisalkar
发明人： Kumar Bhupendra , Yuanyuan Zhang , Zongbin Wang , Lain-Jong Li , Subodh Gautam Mhaisalkar
IPC分类号： H01L29/775 , B05D5/00 , B32B38/10 , B05D3/06 , B05D1/32 , B05D3/10
CPC分类号： G03F7/0002 , B41M3/006 , B81B2207/07 , B81C1/00031 , B81C2201/0184 , B81C2201/0191 , B82Y10/00 , B82Y40/00 , C09D11/52 , H01L51/0004 , H01L51/0005 , H01L51/0048 , H01L51/0541
摘要： A method of patterning nanostructures comprising printing an ink comprising the nanostructures onto a solvent-extracting first surface such that a pattern of nanostructures is formed on the first surface.
摘要翻译：一种图案化纳米结构的方法，包括将包含纳米结构的油墨印刷到溶剂萃取的第一表面上，使得在第一表面上形成纳米结构图案。

3. 发明申请

US20130001515A1 DIRECT GROWTH OF GRAPHENE ON SUBSTRATES 有权
标题翻译：基底上石墨的直接生长
公开(公告)号：US20130001515A1
公开(公告)日：2013-01-03
申请号：US13346152
申请日：2012-01-09
申请人： Lain-Jong Li , Ching-Yuan Su , Ang-Yu Lu , Chih-Yu Wu , Keng-Ku Liu
发明人： Lain-Jong Li , Ching-Yuan Su , Ang-Yu Lu , Chih-Yu Wu , Keng-Ku Liu
IPC分类号： H01L29/775 , C23C16/44 , B05D3/00 , B05D5/00 , B05D5/12 , H01L21/04 , B05D1/36 , B05D3/02 , B82Y40/00
CPC分类号： H01L21/0262 , B82Y30/00 , B82Y40/00 , C01B32/184 , H01L21/02381 , H01L21/0242 , H01L21/02422 , H01L21/02444 , H01L21/02488 , H01L21/02502 , H01L21/02527 , H01L21/02612
摘要： Graphene layers can be formed on a dielectric substrate using a process that includes forming a copper thin film on a dielectric substrate; diffusing carbon atoms through the copper thin film; and forming a graphene layer at an interface between the copper thin film and the dielectric substrate.
摘要翻译：可以使用包括在电介质基板上形成铜薄膜的工艺在电介质基板上形成石墨烯层; 通过铜薄膜扩散碳原子; 以及在所述铜薄膜和所述电介质基板之间的界面处形成石墨烯层。

4. 发明授权

US06878621B2 Method of fabricating barrierless and embedded copper damascene interconnects 失效
标题翻译：制造无障碍和嵌入铜大马士革互连的方法
公开(公告)号：US06878621B2
公开(公告)日：2005-04-12
申请号：US10346382
申请日：2003-01-17
申请人： Zhen-Cheng Wu , Lain-Jong Li , Yung-Chen Lu , Syun-Ming Jang
发明人： Zhen-Cheng Wu , Lain-Jong Li , Yung-Chen Lu , Syun-Ming Jang
IPC分类号： H01L21/768 , H01L21/44 , H01L21/4763
CPC分类号： H01L21/76834 , H01L21/76832 , H01L21/76835 , H01L21/76885
摘要： A method for forming at least one barrierless, embedded metal structure comprising the following steps. A structure having a patterned dielectric layer formed thereover with at least one opening exposing at least one respective portion of the structure. Respective metal structures are formed within each respective opening. The first dielectric layer is removed to expose the top and at least a portion of the side walls of the respective at least one metal structure. A dielectric barrier layer is formed over the structure and the exposed top of the respective metal structure. A second, conformal dielectric layer is formed over the dielectric barrier layer to complete the respective barrierless at least one metal structure embedded within the second, conformal dielectric layer. The dielectric barrier layer preventing diffusion of the metal comprising the respective at least one metal structure into the second, conformal dielectric layer.
摘要翻译：一种形成至少一个无障碍嵌入金属结构的方法，包括以下步骤。具有形成在其上的图案化电介质层的结构，其中至少一个开口暴露出结构的至少一个相应部分。在每个相应的开口内形成相应的金属结构。去除第一电介质层以暴露相应的至少一个金属结构的顶部和至少一部分侧壁。介电阻挡层形成在相应的金属结构的结构和暴露的顶部上。在电介质阻挡层上方形成第二个保形介电层，以完成嵌入在第二保形电介质层内的相应无障碍的至少一个金属结构。电介质阻挡层防止包含相应的至少一种金属结构的金属扩散到第二保形电介质层中。

5. 发明授权

US06794295B1 Method to improve stability and reliability of CVD low K dielectric 失效
标题翻译：提高CVD低K电介质稳定性和可靠性的方法
公开(公告)号：US06794295B1
公开(公告)日：2004-09-21
申请号：US09579542
申请日：2000-05-26
申请人： Cheng Chung Lin , Lain-Jong Li
发明人： Cheng Chung Lin , Lain-Jong Li
IPC分类号： H01L21302
CPC分类号： H01L21/02211 , H01L21/022 , H01L21/02274 , H01L21/31604 , H01L21/31608 , H01L21/31629 , H01L21/31633 , H01L21/76807
摘要： A process for depositing, through plasma enhanced chemical vapor deposition, inorganic films having low dielectric constant is disclosed. After deposition under low power for a few seconds the power is raised to high for a few seconds, deposition of the film continuing to alternate between low and high power modes until the total desired thickness is reached. Additionally, for the deposition of materials such as black diamond, oxygen is added to the plasma during the high power phase (and removed during the low power phase). We have found that films deposited in this way have low flat band voltages, close to zero, and are, in general, more robust than films deposited according to prior art methods. In particular, these films are free of the cracking problems often encountered during chemical mechanical polishing of films of this type during the formation of damascene structures.
摘要翻译：公开了通过等离子体增强化学气相沉积沉积具有低介电常数的无机膜的方法。在低功率下沉积几秒钟之后，功率升高到几秒钟，膜的沉积继续在低功率模式和高功率模式之间交替，直到达到总的期望厚度。另外，对于诸如黑色金刚石的材料的沉积，在高功率阶段期间将氧气加入到等离子体中（并且在低功率阶段期间被除去）。我们已经发现以这种方式沉积的薄膜具有接近于零的低平带电压，并且通常比根据现有技术方法沉积的薄膜更坚固。特别地，这些膜在形成镶嵌结构期间没有这种类型的膜的化学机械抛光期间经常遇到的龟裂问题。

6. 发明授权

US06759342B2 Method of avoiding dielectric arcing 失效
标题翻译：避免电弧放电的方法
公开(公告)号：US06759342B2
公开(公告)日：2004-07-06
申请号：US10269219
申请日：2002-10-11
申请人： Chih-Hsiang Yao , Lain-Jong Li , Bi-Troug Chen , Syun-Ming Jan
发明人： Chih-Hsiang Yao , Lain-Jong Li , Bi-Troug Chen , Syun-Ming Jan
IPC分类号： H01L21302
CPC分类号： H01L21/3105 , H01J2237/0206 , H01J2237/3342 , H01L21/31116
摘要： A method for reducing electrical charge imbalances in a semiconductor process wafer including providing a semiconductor process wafer including a dielectric insulating layer; exposing the semiconductor process wafer to a semiconductor process whereby an electrical charge imbalance accumulates in charge imbalance portions of the dielectric insulating layer; and, treating the semiconductor process wafer with a controlled atmosphere of treatment gas including at least one of inert gas and hydrogen to reduce an accumulated charge imbalance in the charge imbalance portions.
摘要翻译：一种用于减少半导体工艺晶片中的电荷不平衡的方法，包括提供包括介电绝缘层的半导体工艺晶片; 将半导体工艺晶片暴露于半导体工艺，由此电荷不平衡累积在电介质绝缘层的电荷不平衡部分中; 以及在包含惰性气体和氢气中的至少一种的处理气体的受控气氛下处理所述半导体处理晶片以减少所述电荷不平衡部分中的累积电荷不平衡。

7. 发明申请

US20140166475A1 DEVICE DESIGNED FOR CONTINUOUS PRODUCTION OF GRAPHENE FLAKES BY ELECTROCHEMICAL METHOD 有权
标题翻译：设计用于通过电化学方法连续生产石墨片的设备
公开(公告)号：US20140166475A1
公开(公告)日：2014-06-19
申请号：US13719186
申请日：2012-12-18
申请人： Yi-Cheng Cheng , Tzeng-Lu Yeh , Lain-Jong Li , Chuen-Ming Gee , Ching-Jang Lin , Cheng-Te Lin
发明人： Yi-Cheng Cheng , Tzeng-Lu Yeh , Lain-Jong Li , Chuen-Ming Gee , Ching-Jang Lin , Cheng-Te Lin
IPC分类号： C25B15/08
CPC分类号： C01B31/0469 , B82Y30/00 , B82Y40/00 , C01B32/19 , C25B1/00 , C25B15/08
摘要： Disclosed is a device designed for a continuous production of graphene flakes by an electrochemical method. The device consists of an electrochemical unit for generating graphene flakes by an electrochemical exfoliation; a filtration unit for separating the graphene flakes from an electrolyte solution; a guiding path connected to the electrochemical unit and transports the graphene flakes and the electrolyte solution into the filtration unit; a grading collection unit for accepting the separated graphene flakes from the filtration unit and separating the graphene flakes by size. The device can achieve the effect of producing high-quality graphene flakes in mass production electrochemically, continuously and quickly.
摘要翻译：公开了一种设计用于通过电化学方法连续生产石墨烯薄片的装置。该装置由用于通过电化学剥离产生石墨烯薄片的电化学单元组成; 用于将石墨烯薄片与电解质溶液分离的过滤单元; 连接到电化学单元并将石墨烯薄片和电解质溶液输送到过滤单元中的引导路径; 分级收集单元，用于接收来自过滤单元的分离的石墨烯薄片，并分离尺寸的石墨烯薄片。该设备可以在电化学，连续，快速的大规模生产中实现生产高品质石墨烯薄片的效果。

8. 发明申请

US20130001089A1 PREPARATION OF GRAPHENE SHEETS 有权
标题翻译：石墨片的制备
公开(公告)号：US20130001089A1
公开(公告)日：2013-01-03
申请号：US13170624
申请日：2011-06-28
申请人： Lain-Jong Li , Ching-Yuan Su
发明人： Lain-Jong Li , Ching-Yuan Su
IPC分类号： C25D9/04 , C25D5/50 , C25D5/48 , C25D7/00 , B82Y40/00 , B82Y99/00
CPC分类号： B82Y30/00 , B82Y40/00 , C01B32/19 , C01B2204/32 , C25B1/00 , Y10S977/845
摘要： A method of preparing graphene sheets. The method includes: immersing a portion of a first electrode and a portion of a second electrode in a solution containing an acid, an anionic surfactant, a salt, an oxidizing agent, or any combination thereof as an electrolyte, the immersed portion of the first electrode including a first carbon material and the immersed portion of the second electrode including a second carbon material or a metal; causing a potential to exist between the first and second electrodes; and recovering, from the solution, graphene sheets exfoliated from the carbon material(s). Also disclosed is a method of preparing a graphene film electrode. The method includes: dissolving graphene sheets in an organic solvent to form a solution, applying the solution on a substrate, adding deionized water to the solution on the substrate so that a graphene film is formed, and drying the graphene film.
摘要翻译：制备石墨烯片的方法。该方法包括：将第一电极和第二电极的一部分浸入含有酸，阴离子表面活性剂，盐，氧化剂或其任何组合的溶液中作为电解质，第一包括第一碳材料的电极和包括第二碳材料或金属的第二电极的浸没部分; 导致在第一和第二电极之间存在潜力; 并从溶液中回收从碳材料剥离的石墨烯片。还公开了制备石墨烯膜电极的方法。该方法包括：将石墨烯片溶解在有机溶剂中以形成溶液，将溶液涂布在基材上，向基板上的溶液中加入去离子水，形成石墨烯膜，并干燥石墨烯膜。

9. 发明申请

US20120171103A1 METHOD FOR MODIFYING ELECTRICAL PROPERTIES OF CARBON NANOTUBES 有权
标题翻译：改性碳纳米管电性能的方法
公开(公告)号：US20120171103A1
公开(公告)日：2012-07-05
申请号：US13380450
申请日：2010-06-28
申请人： Jianwen Zhao , Lain-Jong Li , Peng Chen , Bee Eng Mary Chan
发明人： Jianwen Zhao , Lain-Jong Li , Peng Chen , Bee Eng Mary Chan
IPC分类号： C07C255/46 , C07C253/30 , C07C17/007 , B01J19/10 , B01J19/12 , C01B31/26 , C07C1/20 , B82Y30/00 , B82Y40/00
CPC分类号： C01B31/0273 , B82Y10/00 , B82Y30/00 , B82Y40/00 , C01B32/174 , C01B2202/22 , G01N27/4146 , H01L51/002 , H01L51/0049 , H01M4/625
摘要： The invention relates to a method of modifying electrical properties of carbon nanotubes by subjecting a composition of carbon nanotubes to one or more radical initiator(s). The invention also relates to an electronic component such as field-effect transistor comprising a carbon nanotube obtained using the method of the invention. The invention also relates to the use of the modified carbon nanotubes in conductive and high-strength nanotube/polymer composites, transparent electrodes, sensors and nanoelectromechanical devices, additives for batteries, radiation sources, semiconductor devices (e.g. transistors) or interconnects.
摘要翻译：本发明涉及通过使碳纳米管的组合物经受一种或多种自由基引发剂来改变碳纳米管的电性能的方法。本发明还涉及一种电子部件，例如包含使用本发明的方法获得的碳纳米管的场效应晶体管。本发明还涉及改性碳纳米管在导电和高强度纳米管/聚合物复合材料，透明电极，传感器和纳米机电装置，电池用添加剂，辐射源，半导体器件（例如晶体管）或互连）中的用途。

10. 发明申请

US20060115980A1 Method for decreasing a dielectric constant of a low-k film 审中-公开
标题翻译：降低低k膜的介电常数的方法
公开(公告)号：US20060115980A1
公开(公告)日：2006-06-01
申请号：US11130044
申请日：2005-05-16
申请人： Chung-Chi Ko , Lih-Ping Li , Lain-Jong Li , Syun-Ming Jang
发明人： Chung-Chi Ko , Lih-Ping Li , Lain-Jong Li , Syun-Ming Jang
IPC分类号： H01L21/4763
CPC分类号： H01L21/76835 , C23C16/401 , H01L21/02126 , H01L21/02216 , H01L21/02274 , H01L21/02304 , H01L21/02362 , H01L21/31633 , H01L21/76807 , H01L21/76834 , H01L21/76843
摘要： A method of forming a low dielectric constant film that can be used in a damascene process is disclosed. An organosilicon precursor such as octamethylcyclotrisiloxane (OMCTS) or any other compound that contains Si, C, and H and optionally O is transported into a PECVD chamber with a carrier gas such as CO or CO2 to provide a soft oxidation environment that leads to a higher carbon content and low k value in the deposited film. The carrier gas may replace helium or argon that have a higher bombardment property that can damage the substrate. Since CO and CO2 can contribute carbon to the deposited film, a lower k value is achieved than when an inert carrier gas is employed. The deposited film can be employed, for example, as a dielectric layer in a damascene stack or as an etch stop layer.
摘要翻译：公开了一种形成可用于镶嵌工艺中的低介电常数膜的方法。将诸如八甲基环三硅氧烷（OMCTS）的有机硅前体或含有Si，C和H以及任选的O的任何其它化合物转移到具有载体气体如CO或CO 2的PECVD室中，以提供软氧化环境导致沉积膜中碳含量较高，k值低。载气可以代替具有较高轰击性能的氦或氩，这可能损坏基底。由于CO和CO 2可以对沉积膜贡献碳，所以实现比使用惰性载气时更低的k值。沉积膜可以用作例如镶嵌层中的介电层或蚀刻停止层。

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