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1. 发明授权

US07560383B2 Method of forming a thin layer and method of manufacturing a non-volatile semiconductor device using the same 失效
标题翻译：形成薄层的方法和使用其制造非易失性半导体器件的方法
公开(公告)号：US07560383B2
公开(公告)日：2009-07-14
申请号：US11398217
申请日：2006-04-05
申请人： Kyong-Hee Joo , Yong-Won Cha , Seung-Hyun Lim , In-Seok Yeo , Kyu-Tae Na
发明人： Kyong-Hee Joo , Yong-Won Cha , Seung-Hyun Lim , In-Seok Yeo , Kyu-Tae Na
IPC分类号： H01L21/44
CPC分类号： C23C16/042 , C23C16/507 , C23C16/56 , H01L21/0214 , H01L21/02164 , H01L21/02274 , H01L21/02345 , H01L21/28273 , H01L21/3105 , H01L21/31612 , H01L29/42332 , H01L29/7883
摘要： In a method of forming a thin layer having a desired composition, a source gas is provided onto a substrate loaded in a chamber for a first time, and the source gas is chemisorbed onto the substrate. While the source gas is provided, a plasma is generated in the chamber for a second time to change the chemisorbed source gas into the thin layer having the desired composition. The thin layer may have a stoichiometrical composition or a non-stoichiometrical composition.
摘要翻译：在形成具有所需组成的薄层的方法中，将源气体第一次提供到装载在室中的基板上，并且源气体被化学吸附到基板上。当提供源气体时，在室中产生等离子体第二次以将化学吸附的源气体改变成具有所需组成的薄层。薄层可以具有化学计量组成或非化学计量组成。

2. 发明申请

US20060246661A1 Method of forming a thin layer and method of manufacturing a non-volatile semiconductor device using the same 失效
公开(公告)号：US20060246661A1
公开(公告)日：2006-11-02
申请号：US11398217
申请日：2006-04-05
申请人： Kyong-Hee Joo , Yong-Won Cha , Seung-Hyun Lim , In-Seok Yeo , Kyu-Tae Na
发明人： Kyong-Hee Joo , Yong-Won Cha , Seung-Hyun Lim , In-Seok Yeo , Kyu-Tae Na
IPC分类号： H01L21/336
CPC分类号： C23C16/042 , C23C16/507 , C23C16/56 , H01L21/0214 , H01L21/02164 , H01L21/02274 , H01L21/02345 , H01L21/28273 , H01L21/3105 , H01L21/31612 , H01L29/42332 , H01L29/7883
摘要： In a method of forming a thin layer having a desired composition, a source gas is provided onto a substrate loaded in a chamber for a first time, and the source gas is chemisorbed onto the substrate. While the source gas is provided, a plasma is generated in the chamber for a second time to change the chemisorbed source gas into the thin layer having the desired composition. The thin layer may have a stoichiometrical composition or a non-stoichiometrical composition.

3. 发明授权

US07056827B2 Methods of filling trenches using high-density plasma deposition (HDP) 有权
标题翻译：使用高密度等离子体沉积（HDP）填充沟槽的方法
公开(公告)号：US07056827B2
公开(公告)日：2006-06-06
申请号：US10917659
申请日：2004-08-13
申请人： Yong-Won Cha , Kyu-tae Na
发明人： Yong-Won Cha , Kyu-tae Na
IPC分类号： H01L21/4763
CPC分类号： H01L21/76837 , C23C16/045 , H01L21/02164 , H01L21/02274 , H01L21/31612 , H01L21/76227
摘要： Methods of filling trenches/gaps defined by circuit elements on an integrated circuit substrate are provided. The methods include forming a first high-density plasma layer on an integrated circuit substrate including at least one trench thereon using a first reaction gas. The first high-density plasma layer is etched using an etch gas including nitrogen fluoride gas (NF3). A second high-density plasma layer is formed on the etched first high-density plasma layer using a second reaction gas including nitrogen fluoride.
摘要翻译：提供了在集成电路基板上填充由电路元件限定的沟槽/间隙的方法。所述方法包括使用第一反应气体在其上包括至少一个沟槽的集成电路衬底上形成第一高密度等离子体层。使用包括氮化氢气体（NF 3 N 3）的蚀刻气体蚀刻第一高密度等离子体层。使用包括氮化氟的第二反应气体，在蚀刻的第一高密度等离子体层上形成第二高密度等离子体层。

4. 发明申请

US20050277265A1 Methods of forming trench isolation layers using high density plasma chemical vapor deposition 有权
标题翻译：使用高密度等离子体化学气相沉积形成沟槽隔离层的方法
公开(公告)号：US20050277265A1
公开(公告)日：2005-12-15
申请号：US11149307
申请日：2005-06-09
申请人： Yong-Won Cha , Kyu-Tae Na , Yong-Soon Choi , Eunkee Hong , Ju-Seon Goo
发明人： Yong-Won Cha , Kyu-Tae Na , Yong-Soon Choi , Eunkee Hong , Ju-Seon Goo
IPC分类号： H01L21/76 , H01L21/762
CPC分类号： H01L21/76224
摘要： A method of forming a trench isolation layer can include forming an isolation layer in a trench using High Density Plasma Chemical Vapor Deposition (HDPCVD) with a carrier gas comprising hydrogen. Other methods are disclosed.
摘要翻译：形成沟槽隔离层的方法可以包括使用具有包含氢的载气的高密度等离子体化学气相沉积（HDPCVD）在沟槽中形成隔离层。公开了其他方法。

5. 发明授权

US07598177B2 Methods of filling trenches using high-density plasma deposition (HDP) 有权
标题翻译：使用高密度等离子体沉积（HDP）填充沟槽的方法
公开(公告)号：US07598177B2
公开(公告)日：2009-10-06
申请号：US11402166
申请日：2006-04-11
申请人： Yong-Won Cha , Kyu-tae Na
发明人： Yong-Won Cha , Kyu-tae Na
IPC分类号： H01L21/302
CPC分类号： H01L21/76837 , C23C16/045 , H01L21/02164 , H01L21/02274 , H01L21/31612 , H01L21/76227
摘要： Methods of filling trenches/gaps defined by circuit elements on an integrated circuit substrate are provided. The methods include forming a first high-density plasma layer on an integrated circuit substrate including at least one trench thereon using a first reaction gas. The first high-density plasma layer is etched using an etch gas including nitrogen fluoride gas (NF3). A second high-density plasma layer is formed on the etched first high-density plasma layer using a second reaction gas including nitrogen fluoride.
摘要翻译：提供了在集成电路基板上填充由电路元件限定的沟槽/间隙的方法。所述方法包括使用第一反应气体在其上包括至少一个沟槽的集成电路衬底上形成第一高密度等离子体层。使用包括氮化氢气体（NF 3）的蚀刻气体蚀刻第一高密度等离子体层。使用包括氮化氟的第二反应气体，在蚀刻的第一高密度等离子体层上形成第二高密度等离子体层。

6. 发明申请

US20060183320A1 Methods of filling trenches using high-density plasma deposition (HDP) 有权
公开(公告)号：US20060183320A1
公开(公告)日：2006-08-17
申请号：US11402166
申请日：2006-04-11
申请人： Yong-Won Cha , Kyu-tae Na
发明人： Yong-Won Cha , Kyu-tae Na
IPC分类号： H01L21/4763
CPC分类号： H01L21/76837 , C23C16/045 , H01L21/02164 , H01L21/02274 , H01L21/31612 , H01L21/76227
摘要： Methods of filling trenches/gaps defined by circuit elements on an integrated circuit substrate are provided. The methods include forming a first high-density plasma layer on an integrated circuit substrate including at least one trench thereon using a first reaction gas. The first high-density plasma layer is etched using an etch gas including nitrogen fluoride gas (NF3). A second high-density plasma layer is formed on the etched first high-density plasma layer using a second reaction gas including nitrogen fluoride.

7. 发明授权

US07332409B2 Methods of forming trench isolation layers using high density plasma chemical vapor deposition 有权
标题翻译：使用高密度等离子体化学气相沉积形成沟槽隔离层的方法
公开(公告)号：US07332409B2
公开(公告)日：2008-02-19
申请号：US11149307
申请日：2005-06-09
申请人： Yong-Won Cha , Kyu-Tae Na , Yong-Soon Choi , Eunkee Hong , Ju-Seon Goo
发明人： Yong-Won Cha , Kyu-Tae Na , Yong-Soon Choi , Eunkee Hong , Ju-Seon Goo
IPC分类号： H01L21/76
CPC分类号： H01L21/76224
摘要： A method of forming a trench isolation layer can include forming an isolation layer in a trench using High Density Plasma Chemical Vapor Deposition (HDPCVD) with a carrier gas comprising hydrogen. Other methods are disclosed.
摘要翻译：形成沟槽隔离层的方法可以包括使用具有包含氢的载气的高密度等离子体化学气相沉积（HDPCVD）在沟槽中形成隔离层。公开了其他方法。

8. 发明申请

US20060102940A1 Semiconductor device having a photodetector and method for fabricating the same 审中-公开
标题翻译：具有光检测器的半导体器件及其制造方法
公开(公告)号：US20060102940A1
公开(公告)日：2006-05-18
申请号：US11280704
申请日：2005-11-15
申请人： Yong-Won Cha , Eun-Kyung Baek , Kyu-Tae Na
发明人： Yong-Won Cha , Eun-Kyung Baek , Kyu-Tae Na
IPC分类号： H01L31/062 , H01L21/00
CPC分类号： H01L27/1462 , H01L27/14609 , H01L27/14623 , H01L27/14636 , H01L27/14643
摘要： The present invention is directed to a semiconductor device having a photodetector and a method of fabricating the same. The photodetector includes a visible ray absorbing pattern disposed on a top and/or bottom surface of an interconnection formed at a light shielding area between adjacent photodetectors, which prevents obliquely incident light from reaching an adjacent photodetector.
摘要翻译：本发明涉及一种具有光检测器的半导体器件及其制造方法。光检测器包括设置在形成在相邻光电检测器之间的遮光区域处的互连件的顶表面和/或底表面上的可见光线吸收图案，其防止倾斜入射光到达相邻的光电检测器。

9. 发明申请

US20050037610A1 Methods of filling trenches using high-density plasma deposition (HDP) 有权
标题翻译：使用高密度等离子体沉积（HDP）填充沟槽的方法
公开(公告)号：US20050037610A1
公开(公告)日：2005-02-17
申请号：US10917659
申请日：2004-08-13
申请人： Yong-Won Cha , Kyu-Tae Na
发明人： Yong-Won Cha , Kyu-Tae Na
IPC分类号： C23C14/32 , H01L21/762 , H01L21/768 , A61B8/00
CPC分类号： H01L21/76837 , C23C16/045 , H01L21/02164 , H01L21/02274 , H01L21/31612 , H01L21/76227
摘要： Methods of filling trenches/gaps defined by circuit elements on an integrated circuit substrate are provided. The methods include forming a first high-density plasma layer on an integrated circuit substrate including at least one trench thereon using a first reaction gas. The first high-density plasma layer is etched using an etch gas including nitrogen fluoride gas (NF3). A second high-density plasma layer is formed on the etched first high-density plasma layer using a second reaction gas including nitrogen fluoride.
摘要翻译：提供了在集成电路基板上填充由电路元件限定的沟槽/间隙的方法。所述方法包括使用第一反应气体在其上包括至少一个沟槽的集成电路衬底上形成第一高密度等离子体层。使用包括氮化氢气体（NF 3）的蚀刻气体蚀刻第一高密度等离子体层。使用包括氮化氟的第二反应气体，在蚀刻的第一高密度等离子体层上形成第二高密度等离子体层。

10. 发明授权

US08999099B2 Substrate bonding system and mobile chamber used thereto 有权
标题翻译：基板接合系统和移动室
公开(公告)号：US08999099B2
公开(公告)日：2015-04-07
申请号：US13577458
申请日：2010-11-26
申请人： Yong-Won Cha , Sang Wook Yoo , Gun-Woo Park , Seung-Hee Jung
发明人： Yong-Won Cha , Sang Wook Yoo , Gun-Woo Park , Seung-Hee Jung
IPC分类号： B29C65/00 , B32B37/00 , H01L21/677 , H01L21/67
CPC分类号： H01L21/6776 , H01L21/67092 , H01L21/6719
摘要： A substrate attachment system, including a portable chamber for receiving a pair of substrates which are aligned; a conveyor transportation device which continuously moves the portable chamber and to which a vacuum generator that is connected to a vacuum port of the portable chamber to evacuate the inside of the portable chamber is provided; and a heating device for performing a heating process in which the aligned substrates are attached to each other in the portable chamber, wherein the conveyor transportation device is arranged to pass through the heating device. The substrate attachment system may contribute to high attachment accuracy, and also, since the size of a chamber is reduced, a spatial utilization rate may be high, and also, since an attachment process is continuously performed by using a conveyor transportation device, a process time may be reduced.
摘要翻译：一种基板连接系统，包括用于接收对准的一对基板的便携式室; 提供了一种输送机输送装置，其连续地移动便携式室，并且提供连接到便携式室的真空端口以抽真空便携式室的内部的真空发生器。以及用于进行加热处理的加热装置，其中对准的基板在便携式室中彼此附接，其中输送机输送装置布置成穿过加热装置。衬底附着系统可以有助于高附着精度，并且由于室的尺寸减小，空间利用率可能高，并且由于通过使用输送机输送装置连续地执行附接过程，因此，时间可能会减少。

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